ST16C1450
Abstract: 16C1450 NCD223 73M1550 ST16C1450CJ28 ST16C1450CQ48 ST16C1450IJ28 ST16C450 IOR 421
Text: ST16C1450 xr 2.97V TO 5.5V UART AUGUST 2005 REV. 4.2.1 GENERAL DESCRIPTION FEATURES The ST16C1450 is a universal asynchronous receiver and transmitter UART . The 1450 is foot print compatible to the SSI 73M1550 and SSI 73M2550 UART with one byte FIFO and higher
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ST16C1450
ST16C1450
73M1550
73M2550
16C1450
NCD223
ST16C1450CJ28
ST16C1450CQ48
ST16C1450IJ28
ST16C450
IOR 421
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ssi 73M2550
Abstract: 73M1550 ST16C1450
Text: ST16C1450 -UART with One Byte FIFO HomeNewsCareers Investor Relations Contact Us PartnerNet Login Search CommunicationsInterfacePower Management ST16C1450 Support Info Request How to Order Samples How to Buy Print this page UART with One Byte FIFO Specifications
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ST16C1450
73M1550/2550/Software
INS8250,
NS16450
24MHz
ssi 73M2550
73M1550
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FTLX3813
Abstract: transce FTLX3 FTLX3813M317P X3813M3
Text: Finisar Productt Specificaation Multiprotoccol, 80km m, 10Gb/ss DWDM M XFP Op ptical Trransceiver FTLX X3813M33xx PROD DUCT FEA ATURES • Supports 8.5G Gb/s to 11.32 2Gb/s • Hot-pluggabl H le XFP footp print • TemperatureT -stabilized DWDM D EML L trransmitter
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10Gb/s
X3813M3
100GHz
DW100S-2Dx
10GBASE
SM-12
200-LL-L)
SM-80
AN-2035:
FTLX3813
transce
FTLX3
FTLX3813M317P
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PDF
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SD-5421-2
Abstract: 5455-1 Sensor* spx SE-1450-4 sd 1450-1 34222 SE-2460-3 SE-5455-2 SE-5455-3 SPX2762
Text: LED's INFRARED R e v e rse O u tp u t Type pow er at P o (m W ) m in . SE SE SE SE 1450-1* 1450-2* 1450-3* 1450-4* S E 2460-1 S E 2460-2 S E 2460-3 Beam S p e c if ie d fo r w a r d c u r r e n t a n g le d ro p l F( m A ) (¿ (d e g re e s) V F( v o lt s )
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IN5417
Abstract: CAPACITOR JL 1500 AF100
Text: M an A M P com pany Wireless Bipolar Power Transistor, 100W P 1450-1550 MHz H 1 5 1 6 -1 0 0 Features • • • • • D esigned fo r L inear A m plifier A pplications Class AB: -32 dBc Typ 3 rd IMD at 100 W atts PEP C o m m o n E m itter C o n fig u ratio n
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5000pF
IN5417
PH1516-100
CAPACITOR JL 1500
AF100
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pin diagram of IC 14511
Abstract: 2a152 rca 3001 transistor CA2S24 RCA Solid State S 565 CA1524 isolated converter using SG3524 2A1524 ca3524c CA3524
Text: GES0^DSTATNEG1_ 3875081 G E SOLID STATE Power Control Circuits Û7S Gû 1 □ DIM503 O I E 14503 1450 01E D ' - - - ~ r-5 fr-//-3 / CA1524, CA2524, CA3524 Regulating Pulse Width Modulator Features: • Com plete PWM p ow er con trol circuitry ■ Separate outputs for single-ended or push-pull operation
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DIM503
CA1524,
CA2524,
CA3524
CA2S24,
CA3524
CA3524H
pin diagram of IC 14511
2a152
rca 3001 transistor
CA2S24
RCA Solid State S 565
CA1524
isolated converter using SG3524
2A1524
ca3524c
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PDF
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PG1434
Abstract: PG1444
Text: sts-? i H NPN Typ o H PG 1430 1 PG1431 1 PG 1432 I PG 1433 | PG1434 I PG 1435 1 PG 1436 | PG 1437 H PG 1438 H PG 1439 PG 1440 PG1441 PG 1442 | PG 1443 g PG 1444 i PG 1445 1 PG 1446 H PG1447 H PG 1448 PG 1449 PG 1450 P G 1451 PG 1452 PG 1453 if ïsS Î't” ss& T'y.EK.s
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PG1430
PG1431
PG1432
PG1433
PG1434
PG1435
PG1436
PG1437
PG1438
PG1439
PG1444
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Untitled
Abstract: No abstract text available
Text: vM fcC O H W an A M P com pany Linear Power Transistor, 40W 850 -1450 MHz PH0814-40 Features • • • • • • • • N PN S ilic o n M ic ro w a v e P o w e r T r a n s is to r C o m m o n E m itte r C o n fig u r a tio n B r o a d b a n d C la s s A B O p e r a tio n
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PH0814-40
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t16c
Abstract: INS8250N ST16C1450
Text: STARTECH ST16C1450 ST16C1451 An 2 F EXflRCompany Printed December 17, 1996 UNIVERSAL ASYNCHRONOUS RECEIVER/TRANSMITTER DESCRIPTION ST16C1450 PLCC Package The S T16C 1450/51 is a universal asynchronous re ce ive r and transm itter. A program m able baud rate
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ST16C1450
ST16C1451
448kHz.
161450-MD-1
ST16C1450/51
161450-RX-1
t16c
INS8250N
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PDF
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ST16C1450
Abstract: No abstract text available
Text: ST16C1450 ST16C1451 STARTECH Printed March 21,1997 An J P EXflRCompany UNIVERSAL ASYNCHRONOUS RECEIVER/TRANSMITTER DESCRIPTION ST16C1450 PLCC Package The S T16C 1450/51 is a universal asynchronous re ce ive r and transm itter. A program m able baud rate
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ST16C1450
ST16C1451
ST16C1450
448kHz.
161450-M
61450-CK
ST16C1450/51
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BA6415AFS
Abstract: ba6415 ba6k BA6439P BA6414FS BA6840AFS BA631 ba6812 BA6412 BA6309
Text: Motor driver DC motor driver F'art No. Supply voltage range V Maximum output current (mW ) CmA) Channel Output mode 6 -1 8 2200 800 FRB BA6206/F 4.5—15 7 0 0 /4 5 0 500 FRSB BA6209/N 6 -1 8 2200/1000 1600 800 700 FRSB BA6109 4 .5 - 1 5 BA6218 TSD Stand-by mode
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HSIP10
BA6109
BA6206/F
BA6209/N
BA6218
BA6219B/BFP-Y
BA65I85FS/FPter
DIP16/SOP16
BA6301/F
BA6321
BA6415AFS
ba6415
ba6k
BA6439P
BA6414FS
BA6840AFS
BA631
ba6812
BA6412
BA6309
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Untitled
Abstract: No abstract text available
Text: CY10E474 CY100E474 CYPRESS: SEMICONDUCTOR 1024 x 4 ECL Static RAM Features • Open em itter output for ease of memory expansion • 1024 x 4-bit organization • Industry-standard pinout • Ultra high speed/standard power — t* = 3 ns, t*cs = 2 ns — IEE = 275 mA
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CY10E474
CY100E474
CY10E474
10KH-/10K-
BlocCY10E474-5LC
CY10E474-5YC
CY10E474-5KC
CY10E474I
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Untitled
Abstract: No abstract text available
Text: ERICSSON ^ PTB 20077 0.7 Watts, 1525-1660 MHz INMARSAT RF Power Transistor Description The 20077 is a class A, NPN, com mon em itter RF power transistor intended for 26 Vdc operation from 1525 to 1660 MHz. Rated at 0.7 watt minimum output power, it may be used for both CW and PEP
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DIODE ku 1490
Abstract: ku 1490 spectra Ve 1200 capacitor ase 104
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15030 D e sig n e d fo r 26 v o lts m icro w a ve la rg e -s ig n a l, c o m m o n em itte r, cla s s A and c la s s A B lin e a r a m p lifie r a p p lic a tio n s in in d u s tria l a n d c o m m e rc ia l F M /A M
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MRF15030
BD135)
MRF15030
DIODE ku 1490
ku 1490
spectra Ve 1200
capacitor ase 104
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A301D
Abstract: No abstract text available
Text: CY10E474 CY100E474 CYPRESS SEMICONDUCTOR • On-chip voltage compensation for im proved noise margin Features • 1024 x 4 ECL Static RAM 1024 x 4 -b it organization • Open em itter output for ease of memory expansion • Ultra high speed/standard power
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CY10E474
CY100E474
10KH/10K-
100K-compatible
10K/10KH
10KH/10K
CY100E474
100E474L-5KC
100E474L-7LC
A301D
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BD 135 transistor
Abstract: zt173
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A dvance Information The RF Line MRF15090 NPN Silicon RF Power Transistor D e sig n e d fo r 2 6 vo lts m icro w a ve la rg e -s ig n a l, c o m m o n em itter, cla s s A and c la s s A B lin e a r a m p lifie r a p p lic a tio n s in in d u s tria l a n d c o m m e rc ia l F M /A M
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BD136)
MRF15090
BD 135 transistor
zt173
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PDF
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Untitled
Abstract: No abstract text available
Text: CY10E422 CY100E422 : J P ' CYPRESS — — SEMICONDUCTOR 256 x 4 ECL Static RAM • Open em itter output for ease of memory expansion Features • 256 x 4 -b it organization • • Ultra high speed/standard power Industry-standard pinout F unctional D escrip tion
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CY10E422
CY100E422
10E422L-7K
10E422L-7D
10E422L-7YM
100E422-3LC
CY100E422-3Y
CY100E422-3K
100E422-5LC
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Untitled
Abstract: No abstract text available
Text: ERICSSON ^ PTB 20202 125 Watts, 1465-1513 MHz Cellular/DAB RF Power Transistor Description The 20202 is an NPN com m on em itter RF power transistor intended for 26 Vdc class AB operation from 1.45 to 1.52 GHz. Rated at 125 watts minim um output power, it is specifically intended for cellular
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0395X
0748X
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PDF
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RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ
Abstract: RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 20174 RF NPN POWER TRANSISTOR 2 WATT 2 GHZ
Text: ERICSSON ^ PTB 20174 90 Watts, 1400-1600 MHz RF Power Transistor Description T he 20174 is an NPN, com m on em itter RF power transistor intended for 26 Vdc class AB operation from 1400 to 1600 MHz. Rated at 90 watts minim um output power, it may be used for both C W and PEP
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5801-PC
RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ
RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ
RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ
20174
RF NPN POWER TRANSISTOR 2 WATT 2 GHZ
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Untitled
Abstract: No abstract text available
Text: CY10E422 CY100E422 i s ^ Y p p p c ;< ^ • ■ ■ ^ s \ # f SEMICONDUCTOR Features • Open em itter output for ease of memory expansion • Ultra high speed/standard power — tAA = 3.5 ns • Industry-standard pinout — Iee = 220 mA Functional Description
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CY10E422
CY100E422
10KH/10K-
10K/10KH
10E422L--7LC
10E422L--7KM
100E422--3
100E422--5D
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PDF
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2SK2038
Abstract: Transistor TOSHIBA 2SK
Text: TOSHIBA 2SK2038 Field Effect Transistor U n it in m m Silicon N Channel MOS Type rc-MOS 11.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance • R ds (ON) = 1 (Typ-) • High Forward Transfer Adm ittance - Yfs' = 3.OS (Typ.)
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2SK2038
DRAI11
2SK2038
Transistor TOSHIBA 2SK
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Untitled
Abstract: No abstract text available
Text: NEC //PB10470 4 ,0 9 6 X 1-BIT 10K ECL RAM NEC Electronics Inc. Description Pin Configuration O o 18-Pln Ceramlc DIP 4K -w ord x 1-bit organization 10K ECL interface O pen em itter output noninverted Fast access times Low pow er consum ption 300-m il, 18-pin ceram ic D IP packaging
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uPB10470
18-Pln
300-m
18-pin
83M-00491SA
PB10470
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AH720
Abstract: w4 DIODE impatt AH751 impatt diode
Text: AH720.AH741/AH750.AH771 G aAs IMPATT P O W E R G E N E R A T I O N D I O D E S FEATURES O perating fre que ncy range : 10, 14, 16G H z C ase style: W 4 E m itting p o w e r : 2 to 5W atts A P PL IC A TI O N S T h e IM P A T T d io d e s are s u ita b le fo r u s e as
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AH720.
AH741/AH750.
AH771
AH741
/AH750.
AH720
w4 DIODE
impatt
AH751
impatt diode
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PDF
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t20d
Abstract: GT20D201
Text: TOSHIBA GT20D201 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL TYPE GT20D201 HIGH POWER AM PLIFIER APPLICATION • H igh B reakdow n V o ltag e : V c E g = - 2 5 0 V Min. • H igh F orw ard T ran sfe r A d m ittan ce : |Yfe | = 1 0 S (T y p .)
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GT20D201
t20d
GT20D201
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