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    150N3 Price and Stock

    Microchip Technology Inc LND150N3-G-P003

    MOSFET N-CH 500V 30MA TO92-3
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    DigiKey LND150N3-G-P003 Cut Tape 3,652 1
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    LND150N3-G-P003 Reel 2,000 2,000
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    Mouser Electronics LND150N3-G-P003 2,272
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    Newark LND150N3-G-P003 Reel 2,000
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    RS LND150N3-G-P003 Bulk 42 Weeks 2,000
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    Microchip Technology Inc LND150N3-G-P003 7,950
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    TME LND150N3-G-P003 1
    • 1 $0.771
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    NAC LND150N3-G-P003 4,000 1
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    Chip1Stop LND150N3-G-P003 Cut Tape 1,800
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    Master Electronics LND150N3-G-P003 4,000
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    Microchip Technology Inc LND150N3-G

    MOSFET N-CH 500V 30MA TO92-3
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    DigiKey LND150N3-G Bag 2,966 1
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    Avnet Americas LND150N3-G Bag 7 Weeks 1,000
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    LND150N3-G Bulk 5 Weeks, 4 Days 1
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    Mouser Electronics LND150N3-G 4,813
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    Newark LND150N3-G Bulk 790 1
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    RS LND150N3-G Bulk 42 Weeks 1,000
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    Microchip Technology Inc LND150N3-G 13,443
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    TME LND150N3-G 529 3
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    NAC LND150N3-G Bag 10,000 1
    • 1 $0.58
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    Avnet Silica LND150N3-G 9 Weeks 1,000
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    Chip1Stop LND150N3-G Bulk 987
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    EBV Elektronik LND150N3-G 8 Weeks 1,000
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    Master Electronics LND150N3-G 6,550
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    STMicroelectronics STU150N3LLH6

    MOSFET N-CH 30V 80A IPAK
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    DigiKey STU150N3LLH6 Tube 2,777 1
    • 1 $2.98
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    • 100 $1.39027
    • 1000 $1.07149
    • 10000 $0.92572
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    Microchip Technology Inc LND150N3-G-P014

    MOSFET N-CH 500V 30MA TO92-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LND150N3-G-P014 Cut Tape 1,934 1
    • 1 $0.68
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    Avnet Americas LND150N3-G-P014 Ammo Pack 4 Weeks 2,000
    • 1 $0.68
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    Mouser Electronics LND150N3-G-P014 1,561
    • 1 $0.68
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    Newark LND150N3-G-P014 Bulk 2,000
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    RS LND150N3-G-P014 Bulk 42 Weeks 2,000
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    Microchip Technology Inc LND150N3-G-P014 44,000
    • 1 $0.68
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    TME LND150N3-G-P014 1
    • 1 $0.771
    • 10 $0.694
    • 100 $0.551
    • 1000 $0.514
    • 10000 $0.495
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    NAC LND150N3-G-P014 Ammo Pack 36,000 1
    • 1 $0.66
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    Master Electronics LND150N3-G-P014
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    Microchip Technology Inc LND150N3-G-P002

    MOSFET N-CH 500V 30MA TO92-3
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    DigiKey LND150N3-G-P002 Cut Tape 1,829 1
    • 1 $0.68
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    Avnet Americas LND150N3-G-P002 Reel 7 Weeks 2,000
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    Mouser Electronics LND150N3-G-P002 736
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    Newark LND150N3-G-P002 Reel 2,000
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    RS LND150N3-G-P002 Bulk 42 Weeks 2,000
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    Microchip Technology Inc LND150N3-G-P002 26,000
    • 1 $0.68
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    TME LND150N3-G-P002 1
    • 1 $0.771
    • 10 $0.694
    • 100 $0.551
    • 1000 $0.514
    • 10000 $0.495
    		Get Quote
    NAC LND150N3-G-P002 20,000 1
    • 1 $0.66
    • 10 $0.66
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    • 1000 $0.54
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    Master Electronics LND150N3-G-P002
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    Find more 150N3 price and stock on Findchips.com

    150N3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXGQ150N33TC

    Abstract: IXGQ150N33TCD1 siemens igbt 75a IXGA150N33TC g150n IXGA150 IXGQ150
    Text: 150N33TC 150N33TC 150N33TCD1 Trench Gate High Speed IGBT VCES = ICP = VCE sat ≤ 330V 400A 1.8V For PDP Applications 150N33TC 150N33TCD1 TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 330 V VGEM Transient ± 30


    Original     		PDF IXGA150N33TC IXGQ150N33TC IXGQ150N33TCD1 150N33TC 150N33TCD1 O-263 150N33TC 9-04-08-B IXGQ150N33TC IXGQ150N33TCD1 siemens igbt 75a IXGA150N33TC g150n IXGA150 IXGQ150

    STD150N3LLH6

    Abstract: 150N3LLH6 STP150N3LLH6 stp150n3 TO-251 footprint STU150N3LLH6
    Text: 150N3LLH6 150N3LLH6, 150N3LLH6 N-channel 30 V, 0.0024 Ω , 80 A, DPAK, IPAK, TO-220 STripFET VI DeepGATE™ Power MOSFET Features Type VDSS RDS on max ID 150N3LLH6 30 V 0.0028 Ω 80 A 150N3LLH6 30 V 0.0033 Ω 80 A 150N3LLH6 30 V 0.0033 Ω


    Original     		PDF STD150N3LLH6 STP150N3LLH6, STU150N3LLH6 O-220 STP150N3LLH6 STD150N3LLH6 150N3LLH6 STP150N3LLH6 stp150n3 TO-251 footprint STU150N3LLH6

    Untitled

    Abstract: No abstract text available
    Text: 150N3LLH5 N-channel 30 V, 0.0014 Ω, 35 A, PowerFLAT 5x6 STripFET™ V Power MOSFET Features Order code VDSS 150N3LLH5 30 V RDS on max ID <0.00175 Ω 35 A (1) 1. The value is rated according Rthj-pcb 1 • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)


    Original     		PDF STL150N3LLH5 STL150N3LLH5

    Untitled

    Abstract: No abstract text available
    Text: 150N3LLH5 N-channel 30 V, 0.0014 Ω typ., 35 A STripFET V Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features 1 Order code VDS RDS on max. ID 150N3LLH5 30 V 0.00175 Ω 35 A (1) 1. The value is rated according Rthj-pcb


    Original     		PDF STL150N3LLH5 DocID14092

    STD150N3LLH6

    Abstract: STU150N3LLH6 150N3 095B4 JESD97 150N3LLH6 std150n3
    Text: 150N3LLH6 150N3LLH6 N-channel 30 V, 0.0024 Ω , 80 A, DPAK, IPAK STripFET VI DeepGATE™ Power MOSFET Preliminary Data Features Type VDSS RDS on max ID 150N3LLH6 30 V 0.0028 Ω 80 A 150N3LLH6 30 V 0.0033 Ω 80 A • 3 RDS(on) * Qg industry benchmark


    Original     		PDF STD150N3LLH6 STU150N3LLH6 STD150N3LLH6 STU150N3LLH6 150N3 095B4 JESD97 150N3LLH6 std150n3

    390p-39n

    Abstract: 15N-220
    Text: Note: Y5V dielectric is not dual rated at 63V Copyright Syfer Technology Limited - 1998. SIZE 0603 0805 1206 1210 1808 2220 2225 16V C0G 390P-1.2N X7R 100V 200/250V 390P-1.0N 0.5P-470P 1.0P-330P 1.0P-100P 22N-100N 330P-56N 330P-47N 100P-10N 100P-5.6N Y5V


    Original     		PDF 390P-1 22N-100N 50/63V 0P-330P 100P-10N 200/250V 0P-100P 100P-5 390p-39n 15N-220

    150N3

    Abstract: BSO150N03
    Text: BSO150N03 OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 15 mΩ ID 9.1 A 1) • Qualified according to JEDEC for target applications • N-channel


    Original     		PDF BSO150N03 Q67042-S4215 150N3 150N3 BSO150N03

    STL150N3LLH6

    Abstract: No abstract text available
    Text: 150N3LLH6 N-channel 30 V, 0.0016 Ω, 33 A PowerFLAT 6x5 STripFET™ VI DeepGATE™ Power MOSFET Features Type VDSS RDS(on) max ID 150N3LLH6 30 V 0.0024 Ω 33 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■


    Original     		PDF STL150N3LLH6 STL150N3LLH6

    IECQ-CECC and MIL grade ranges

    Abstract: IECQ-CECC Range
    Text: Surface mount capacitors 1.1 - Production process flowchart Ceramic powder preparation 1.1 to 1.3 1.2 - Syfer reliability grades Electrode ink material Space Grade ESCC 3009 1 (wet process) MIL Grade(2) IECQ-CECC(3) AEC-Q200(4) Fire Standard components Multilayer build


    Original     		PDF AEC-Q200 IECQ-CECC and MIL grade ranges IECQ-CECC Range

    STL150N3LLH5

    Abstract: No abstract text available
    Text: 150N3LLH5 N-channel 30 V, 0.0014 Ω, 35 A, PowerFLAT 6x5 STripFET™ V Power MOSFET Features Type VDSS 150N3LLH5 30 V RDS(on) max ID <0.00175 Ω 35 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)


    Original     		PDF STL150N3LLH5 STL150N3LLH5

    STL150N3LLH6

    Abstract: AM040 150N3
    Text: 150N3LLH6 N-channel 30 V, 0.0016 Ω, 33 A PowerFLAT 5x6 STripFET™ VI DeepGATE™ Power MOSFET Features Type VDSS RDS(on) max ID 150N3LLH6 30 V 0.002 Ω 33 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)


    Original     		PDF STL150N3LLH6 STL150N3LLH6 AM040 150N3

    150N3

    Abstract: BSO150N03 JESD22
    Text: BSO150N03 OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC V DS 30 V R DS on ,max 15 mΩ ID 9.1 A 1 • Qualified according to JEDEC for target applications • Dual n-channel


    Original     		PDF BSO150N03 Q67042-S4215 150N3 150N3 BSO150N03 JESD22

    Untitled

    Abstract: No abstract text available
    Text: 150N3LH6 N-channel 30 V, 2.4 mΩ typ., 80 A, STripFET VI DeepGATE™ Power MOSFET in D²PAK package Datasheet — production data Features Order code VDSS RDS on max ID(1) PTOT 150N3LH6 30 V 3.0 mΩ 80 A 110 W 1. Current limited by package. •


    Original     		PDF STB150N3LH6 STB150N3LH6 150N3LH6 STB150N3LHin

    150N3

    Abstract: BSO150N03 JESD22
    Text: BSO150N03 OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 15 mΩ ID 9.1 A 1) • Qualified according to JEDEC for target applications • N-channel


    Original     		PDF BSO150N03 150N3 150N3 BSO150N03 JESD22

    military passive component

    Abstract: MIL-PRF-28861 330P CAPACITOR X7R 10n 2KV Y cap 33nF 250V Bp c0g 150pf 6kv arinc 404 capacitor 0805 63V 470nF capacitor 220p
    Text: MIL grade surface mount capacitors AEC-Q200 qualified surface mount capacitors IECQ-CECC qualified surface mount capacitors Space grade surface mount capacitors Planar arrays and discoidals Radial capacitors Filter products 2nd Edition Introduction Syfer Technology Ltd manufactures quality


    Original     		PDF AEC-Q200 military passive component MIL-PRF-28861 330P CAPACITOR X7R 10n 2KV Y cap 33nF 250V Bp c0g 150pf 6kv arinc 404 capacitor 0805 63V 470nF capacitor 220p

    X7R 10n 2KV

    Abstract: 10p-820p 470n 630v 100p-33n 10n12 10p-560n
    Text: Surface mount capacitors Quick Reference Guide Standard product ranges - 10V to 6kV ranges = X5R Range Capacitance values F. 0603 0805 1206 1210 1808 1812 1825 2220 2225 3640 5550 8060 0.47p-3.9n 1.0p-15n 1.0p-47n 3.9p-100n 4.7p-100n 10p-220n 10p-470n 10p-470n


    Original     		PDF 47p-3 0p-15n 0p-47n 9p-100n 7p-100n 10p-220n 10p-470n 10p-560n 100p-100n X7R 10n 2KV 10p-820p 470n 630v 100p-33n 10n12 10p-560n

    150N3

    Abstract: MARKING 150N3 BSO150N03 IEC61249-2-21 JESD22
    Text: BSO150N03 OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 15 mΩ ID 9.1 A 1) • Qualified according to JEDEC for target applications PG-DSO-8


    Original     		PDF BSO150N03 IEC61249-2-21 150N3 150N3 MARKING 150N3 BSO150N03 IEC61249-2-21 JESD22

    hv4274

    Abstract: STL150N3LLH5
    Text: 150N3LLH5 N-channel 30 V - 0.0014 Ω - 35 A - PowerFLAT 6x5 STripFET™ V Power MOSFET Features Type VDSS 150N3LLH5 30 V RDS(on) max ID <0.00175 Ω 35 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)


    Original     		PDF STL150N3LLH5 hv4274 STL150N3LLH5

    MARKING 150N3

    Abstract: 150n3
    Text: BSO150N03 OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 15 mΩ ID 9.1 A 1) • Qualified according to JEDEC for target applications • N-channel


    Original     		PDF BSO150N03 150N3 MARKING 150N3 150n3

    150n3

    Abstract: BSO150N03
    Text: BSO150N03 OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC V DS 30 V R DS on ,max 15 mΩ ID 9.1 A • Dual n-channel • Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF BSO150N03 Q67042-S4215 150N3 150n3 BSO150N03

    STL150N3LLH5

    Abstract: 150N3LLH5
    Text: 150N3LLH5 N-channel 30 V, 0.0014 Ω, 35 A - PowerFLAT 6x5 STripFET™ V Power MOSFET Features Type VDSS 150N3LLH5 30 V RDS(on) max ID <0.00175 Ω 35 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)


    Original     		PDF STL150N3LLH5 STL150N3LLH5 150N3LLH5

    MBM27C1000-20

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS F U J IT S U 374=!7b2 OOCHEIO b 23E D CMOai.048,576.BI UV ERASABLE REAI ONLY MEMOR MBM27C1000-15 MBM27C1000-20 MBM27C1000-25 April 1988 Edition 2.0 CMOS 1,048,576 BIT UV ERASABLE READ ONLY MEMORY EPROM The Fujitsu MBM27C1000 EPROM Is a high speed read-only static mem ory th a t Is


    OCR Scan     		PDF MBM27C1000-15 MBM27C1000-20 MBM27C1000-25 MBM27C1000 072-byte 32-pln 36-pad 15-to-21 MBM27C1000-20