honeywell memory sram
Abstract: hx6408 HXS6408
Text: HXS6408 HXS6408 512k x 8 STATIC RAM The monolithic 512k x 8 Radiation Hardened Static RAM is a high performance 524,288 word x 8-bit static random access memory, fabricated with Honeywell’s 150nm silicon-on-insulator CMOS S150 technology. It is designed for use in low voltage systems operating
|
Original
|
HXS6408
150nm
HXS6408
22CFR
honeywell memory sram
hx6408
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HXSR06432 2M x 32 STATIC RAM The Multi-Chip Module MCM , 2M x 32 Radiation Hardened Static RAM is a high performance 2,097,152 word x 32-bit static random access memory MCM. The SRAM MCM consists of four 512k x 32 SRAM die fabricated with Honeywell’s 150nm silicon-on-insulator CMOS (S150) technology.
|
Original
|
HXSR06432
32-bit
150nm
ADS-14173
|
PDF
|
HX6408
Abstract: No abstract text available
Text: HRT6408 512K x 8 STATIC RAM The monolithic 512k x 8 Radiation Tolerant Static RAM is a high performance 524,288 word x 8-bit static random access memory, fabricated with Honeywell’s 150nm silicon-on-insulator CMOS S150 technology. It is designed for use in low
|
Original
|
HRT6408
150nm
ADS-14194
HX6408
|
PDF
|
HLXSR01632
Abstract: No abstract text available
Text: HLXSR01632 512K x 32 STATIC RAM The monolithic 512k x 32 Radiation Hardened Static RAM is a high performance 524,288 word x 32-bit static random access memory, fabricated Honeywell’s 150nm silicon-on-insulator with CMOS S150 technology. It is designed for use in low
|
Original
|
HLXSR01632
32-bit
150nm
ADS-14217
HLXSR01632
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HLXSR01608 2M x 8 STATIC RAM The monolithic 2M x 8 Radiation Hardened Static RAM is a high performance 2,097,152 word x 8-bit static random access memory, fabricated Honeywell’s 150nm silicon-on-insulator with CMOS S150 technology. It is designed for use in low
|
Original
|
HLXSR01608
150nm
ADS-14218
|
PDF
|
HLXSR01608
Abstract: No abstract text available
Text: HLXSR01608 HLXSR01608 2M x 8 STATIC RAM 1.5V Core VDD The HLXSR01608 radiation hardened 16Mbit Static proprietary design, layout and process hardening Random Access Memory SRAM is a monolithic techniques. There is no internal EDAC implemented. SRAM fabricated with Honeywell’s 150nm silicon-oninsulator CMOS (S150) technology. The 2M x 8 bit
|
Original
|
HLXSR01608
HLXSR01608
16Mbit
150nm
110mW
40MHz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HXSR01632 512K x 32 STATIC RAM The monolithic 512k x 32 Radiation Hardened Static RAM is a high performance 524,288 word x 32-bit static random access memory, fabricated Honeywell’s 150nm silicon-on-insulator with CMOS S150 technology. It is designed for use in low
|
Original
|
HXSR01632
32-bit
150nm
ADS-14154
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PPH15X_10 TECHNOLOGY The new UMS 150nm GaAs power pHEMT process UMS is now pleased to extend its foundry offer with the introduction of a new 150nm GaAs Power pHEMT process. This process is optimised for wideband high power amplification up to 40GHz with a typical Ft of 65GHz
|
Original
|
PPH15X
150nm
150nm
40GHz
65GHz
750mW/mm
|
PDF
|
HX6408
Abstract: No abstract text available
Text: HXS6408 HXS6408 512k x 8 STATIC RAM The monolithic 512k x 8 Radiation Hardened Static RAM is a high performance 524,288 word x 8-bit static random access memory, fabricated with Honeywell’s 150nm silicon-on-insulator CMOS S150 technology. It is designed for use in low voltage systems operating
|
Original
|
HXS6408
150nm
ADS-14163
HX6408
|
PDF
|
HXSR01608
Abstract: No abstract text available
Text: HXSR01608 2M x 8 STATIC RAM The monolithic 2M x 8 Radiation Hardened Static RAM is a high performance 2,097,152 word x 8-bit static random access memory, fabricated Honeywell’s 150nm silicon-on-insulator with CMOS S150 technology. It is designed for use in low
|
Original
|
HXSR01608
150nm
ADS-14155
HXSR01608
|
PDF
|
1000PPM
Abstract: No abstract text available
Text: SPECIFICATION FOR COTCO LED LAMP MODEL No : DOC. No : LC374TWN1-35G-A 04 18Nov04 Description: 35 Degree 3mm Round LED Lamp in White Color with Water Transparent Lens and Stopper Dice Material: InGaN Confirmed by Customer: Date: ATTENTION OBSERVE PRECAUTIONS
|
Original
|
LC374TWN1-35G-A
18Nov04
25Aug04
21Sep04
ECN-H20040310
4200mcd.
21Sep04.
1000PPM
|
PDF
|
1000PPM
Abstract: No abstract text available
Text: COTCO LUMINANT DEVICE HUIZHOU LTD. SPECIFICATION FOR COTCO LED LAMP Document No: Model No : Rev. No: Date: SPE/LC503TWN1-50H-A1 LC503TWN1-50H-A1 02 2005-05-19 Description: 50 Degree 5mm Round LED Lamp in White Color with Water Transparent Lens and No Stopper
|
Original
|
SPE/LC503TWN1-50H-A1
LC503TWN1-50H-A1
3000mcd.
FCN20050163
COTCO-D-074
1000PPM
|
PDF
|
LS1-PWH1-01
Abstract: No abstract text available
Text: SPECIFICATION FOR I-WITTY LED LAMP MODEL No : DOC. No : LS1-PWH1-01 E 08Apr04 Description: 120 Degree 4.0x 4.0mm Side SMD in Daylight Color with Water Transparent Dice Material: InGaN Confirmed By Customer: Date: ATTENTION OBSERVE PRECAUTIONS ELECTROSTATIC
|
Original
|
LS1-PWH1-01
08Apr04
28Jul03
30Dec03
ECN-H20040082
30Dec03.
I-WITTY-D-023
LS1-PWH1-01
|
PDF
|
1000PPM
Abstract: LD-300DWN1-70 4044v LD300
Text: COTCO LUMINANT DEVICE HUIZHOU LTD. SPECIFICATION FOR COTCO LED LAMP Document No : Model No: Rev. No : Date: SPE/LD-300DWN1-70 LD-300DWN1-70 01 2005-10-6 Description: 3 x 3mm, QFN Type, High Power White LED For Illumination, Clear Compound Encapsulated. Dice Material:
|
Original
|
SPE/LD-300DWN1-70
LD-300DWN1-70
FCN20050327
COTCO-D-074
1000PPM
LD-300DWN1-70
4044v
LD300
|
PDF
|
|
|
1000PPM
Abstract: No abstract text available
Text: COTCO LUMINANT DEVICE HUIZHOU LTD. SPECIFICATION FOR COTCO LED LAMP Document No : Model No: Rev. No : Date: SPE/LD-700DWN6-70 LD-700DWN6-70 01 2005-09-16 Description: 7 x 7mm, QFN Type, High Power White LED For Illumination, Clear Compound Encapsulated.
|
Original
|
SPE/LD-700DWN6-70
LD-700DWN6-70
COTCO-D-074
1000PPM
|
PDF
|
AXUV576C
Abstract: No abstract text available
Text: ELECTRON DETECTION 576 mm2 AXUV576C FEATURES • • • • Square active area Round 4 pin package Ideal for electron detection 100% internal QE Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R
|
Original
|
AXUV576C
AXUV576C
|
PDF
|
SXUV20HS1
Abstract: No abstract text available
Text: PHOTODIODE Ø5 mm SXUV20HS1 FEATURES • • • • • Circular active area Ideal for EUV detection 100% internal QE High speed Grid lines 5 microns, Pitch 100 microns • RoHS and REACH compliant RoHS Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
|
Original
|
SXUV20HS1
SXUV20HS1
|
PDF
|
AXUVHS5
Abstract: No abstract text available
Text: PHOTODIODE 1 mm2 AXUVHS5 FEATURES • • • • SMA connector Ideal for electron detection 100% internal QE Ultra high speed Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R TEST CONDITIONS
|
Original
|
|
PDF
|
AXUV20HS1
Abstract: No abstract text available
Text: PHOTODIODE Ø5 mm AXUV20HS1 FEATURES • • • • • Circular active area Ideal for electron detection 100% internal QE High speed Grid lines 5 microns, Pitch 100 microns • RoHS and REACH compliant RoHS Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
|
Original
|
AXUV20HS1
AXUV20HS1
|
PDF
|
AXUV63HS1-CH
Abstract: No abstract text available
Text: PHOTODIODE 63 mm2 AXUV63HS1-CH FEATURES • • • • • Circular active area Ideal for electron detection 100% internal QE High speed Hole in center of detector Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS
|
Original
|
AXUV63HS1-CH
AXUV63HS1-CH
|
PDF
|
optek a400
Abstract: No abstract text available
Text: 4-Pin White LED Lamp 7.6mm OVFSW6C8 x x x x x Packaged in tubes Compatible with automatic placement equipment Compatible with infrared and vapor phase reflow solder process Mono-color type Pb-free Product Photo Here The OVFSW6C8 is designed with higher forward voltage to maximize brightness and incorporates a low-profile
|
Original
|
60/Tube
optek a400
|
PDF
|
LP6-EWN1-03-N3
Abstract: No abstract text available
Text: COTCO LUMINANT DEVICE HUIZHOU LTD. SPECIFICATION FOR COTCO LED LAMP Document No: Model No : Rev. No : Date: SPE/LP6-EWN1-03-N3 LP6-EWN1-03-N3 02 2007-05-08 Description: 120 Degree 6.0 x 5.0mm SMT-LED in White Color with Water Transparent Dice Material: InGaN
|
Original
|
SPE/LP6-EWN1-03-N3
LP6-EWN1-03-N3
300C/W
FCN20070120
COTCO-D-074
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SPECIFICATION FOR I-WITTY LED LAMP MODEL No : DOC. No : LC503PWH1-15Q-01-MT A 05Mar04 Description: 15 Degree 5mm Round LED Lamp in Daylight Color with Water Transparent Lens and No Stopper *This specification is only for Marktech Dice Material: InGaN Confirmed
|
Original
|
LC503PWH1-15Q-01-MT
05Mar04
18inch2)
ECN-H20040053
I-WITTY-D-023
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SPECIFICATION FOR I-WITTY LED LAMP MODEL No : DOC. No : LM1-PWH1-11-MT 01 11Nov04 Description: 120 Degree 3.2 x 2.8mm Power SMD in Daylight Color with Water Transparent *This specification is only for MT* Dice Material: InGaN Confirmed by Customer: Date: ATTENTION
|
Original
|
LM1-PWH1-11-MT
11Nov04
16mm2)
ECN-H20040299
I-WITTY-D-023
|
PDF
|
