1557 D TRANSISTOR Search Results

1557 D TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

1557 D TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
EL2018CN Abstract: metal detector plans metal detector plans schematic EL2018 EL2018CH EL2018CJ MIL-I-45208A R2KN Text: ELANTEC INC Ifl D E \| 312=1557 □□□□574 7 HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS Fast, High Voltage Comparator with Transparent latch Features General Description • Fast response tim e -2 0 ns • Wide input differential voltage range —24 V on ± 15 V	OCR Scan	EL2018/EL2018C time-20 Hz-20 EL2018 EL2018CN metal detector plans metal detector plans schematic EL2018CH EL2018CJ MIL-I-45208A R2KN	PDF
74LS138C Abstract: metal detector plans schematic metal detector diagram PI metal detector plans q815 EL2018CH EL2018CJ EL2018CN EL2018H 0DD25 Text: 312*1557 0DD25D7 ^SD MIELA SÖE D ia n t e c EL2018/EL2018 C Fast, High Voltage Comparator with Transparent Latch HIGH PERFORMANCE ANALOG INTEGR/TEC CIRCUITS •■ ELANTEC INC F eatu res G eneral D escrip tion • F ast response time—20 ns • Wide input differential voltage	OCR Scan	312TSS7 0DD25D7 EL2018/EL2018C EL2018/EL2018C EL2018 74LS138C metal detector plans schematic metal detector diagram PI metal detector plans q815 EL2018CH EL2018CJ EL2018CN EL2018H 0DD25	PDF
zener 4b7 Abstract: No abstract text available Text: EL2041/EL2041C SflE D • 312=1557 □□□2110 fill H E L A ELANTEC INC F eatu res G eneral D escrip tion • Open loop unity bandwidth—90 MHz • Unity gain stable • High gain—10k typ. • High slew rate—250 V/ju.s • Low offset voltage—0.5 mV typ.,	OCR Scan	EL2041/EL2041C MIL-STD-883 HA2541 EL2041CG 864E-18 312SS57 00DS122 EL2041/EL2041C EL2041 zener 4b7	PDF
SRF 3775 Abstract: EL2041CG pot 100K smd smd diode JC 7K EL2041CJ EL2041G EL2041J HA2541 zener 4b7 Text: EL2041/EL2041C SflE D • 312=1557 □□□2110 fill H E L A ELANTEC INC F eatu res G eneral D escrip tion • Open loop unity bandwidth—90 MHz • Unity gain stable • High gain—10k typ. • High slew rate—250 V/ju.s • Low offset voltage—0.5 mV typ.,	OCR Scan	EL2041/EL2041C MIL-STD-883 HA2541 864E-18 312SS57 00DS122 EL2041/EL2041C EL2041 SRF 3775 EL2041CG pot 100K smd smd diode JC 7K EL2041CJ EL2041G EL2041J HA2541 zener 4b7	PDF
metal detector plans Abstract: metal detector plans schematic el2019h/883b EL2019CH EL2019CN EL2019H flipflop application TI5C Text: E L A N T E C INC ìfl"" Ì>E\| 315=1557 GDOOSflM □ HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS Fast, High Voltage Comparator with Master Slave Flip-Flop F e a tu re s G eneral D escription • Comparator cannot oscillate • Fast response - 5 ns data to	OCR Scan	EL2019/EL2019C 30/iV) EL2019 3121S57 fj-73-Si metal detector plans metal detector plans schematic el2019h/883b EL2019CH EL2019CN EL2019H flipflop application TI5C	PDF
basic circuit diagram of AC servo motor Abstract: 3 phase AC servo drive schematic TI EL2037CM 3 phase AC servo drive schematic Control AC servo motor EL2037 floppy motor driver IN4000 mos short circuit protection schematic diagram short circuit protection schematic diagram Text: ELANTEC 4 IE D INC 315=1557 Servo Motor Drivers G0017B3 b ÜELA " T S ¿ -i V 2 S F e a tu r e s G e n e ra l D e sc r ip tio n • No crossover distortion • Low output offset current • Maximum output swing • Short circuit protected • Programmable park voltage	OCR Scan	EL2036C/EL2037C basic circuit diagram of AC servo motor 3 phase AC servo drive schematic TI EL2037CM 3 phase AC servo drive schematic Control AC servo motor EL2037 floppy motor driver IN4000 mos short circuit protection schematic diagram short circuit protection schematic diagram	PDF
Untitled Abstract: No abstract text available Text: EN2016D 312=1557 OOQllGa M SÔE D ELANTEC INC EN20J6D Die Fast QuadNPN Array A b s o lu te M a xim u m R a tin g s w T~</3 -as t a = 25°c> Pd Power Dissipation Each Transistor 500 mW (T^ = 25°C Ta Operating Temperature Range —55°Cto+125°C Ts Storage Temperature	OCR Scan	EN20J6D 500mW	PDF
EL2070 Abstract: EL2070CN EL2070CS MIL-I-45208A 7710 8 pin dip Text: SflE D 312=1557 0002147 S03 « E L A HlGH PERfORMAf^CE ANALOG INTEGRATED CIRCUITS EL2070/EL2070C 200 MHz Current Feedback Am plifier ELANTEC INC F e a tu r e s G e n e ra l D e s c rip tio n • 200 M Hz —3 dB bandwidth, The EL2070 is a wide bandwidth, fast settling monolithic am	OCR Scan	DD02147 EL2070/EL207OC ns/100 conversio30 EL2070/EL2070C EL2070 EL2070CN EL2070CS MIL-I-45208A 7710 8 pin dip	PDF
1557 b transistor Abstract: transistor IC 1557 b 1557 transistor transistor 1557 b transistor 1557 TRANSISTOR 2SC 2SC1557 C4053 uhf transistor amplifier K8J5 Text: S /U D :/N P N l£ 9 * 5 /? J I/7 b -* fê h 5 > 5 tt9 SILICON NPN EPITAXIAL PLANAR TRANSISTOR 2SC , 1557 i f i i i f f l o -f » b ttxib nmmm INDUSTRIAL APPLICATIONS o VHP , UHF o M icrowave H igh Power A m p lifie r A p p lic a tio n s o VHF, UHF Band CATV A p p l i c a t io n s	OCR Scan	30MHz 2SC1557 1557 b transistor transistor IC 1557 b 1557 transistor transistor 1557 b transistor 1557 TRANSISTOR 2SC C4053 uhf transistor amplifier K8J5	PDF
transistor D 1557 Abstract: 1557 b transistor F88 diode transistor IC 1557 B transistor 1557 b AF280 Germanium power Text: 5SC » • fi235bOS GG04QÔ1 S H S I E â PNP Germanium UHF Transistor - SIEMENS À F 280 S AKTIENGESELLSCHAF “ fo r m ixe r and o sc illa to r c irc u its up to 9 0 0 M H z - 7^ 3/-07 AF 2 8 0 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package similar to T 0 119. This transistor Is particularly	OCR Scan	fi235bOS GG04Q 2701-F88 transistor D 1557 1557 b transistor F88 diode transistor IC 1557 B transistor 1557 b AF280 Germanium power	PDF
transistor d 1557 Abstract: transistor 1558 transistor IC 1557 b germanium transistor ac 128 ML 1557 b transistor 1557 b transistor af280 Q62701-F88 900 mhz germanium diode AF 280 S Text: 25C » • fi235bOS GG04QÔ1 S « S I E G PNP Germanium UHF Transistor - SIEMENS À F 280 S AKTIENGESELLSCHAF “7 ^ fo r m ix e r and o s c illa to r c ir c u its up to 9 0 0 M H z 3 - / - 0 7 A F 2 8 0 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package sim ilar to T 0 119. This transistor is particularly	OCR Scan	fl235bQS 0DQ4Q81 T0119. Q62701-F88 transistor d 1557 transistor 1558 transistor IC 1557 b germanium transistor ac 128 ML 1557 b transistor 1557 b transistor af280 Q62701-F88 900 mhz germanium diode AF 280 S	PDF
2N6547 Abstract: 2N6546 Text: s G S-THOHSON - D7E D \| 7 ^ 5 3 7 . : 6 -7 C- 1 5 5- 7 1 D OQlTBia"!] 1" - / S ’- T^- 2N6546 IVIULTIEPITAXIAL MESA NPN H IG H V O L T A G E , H IG H C U R R E N T P O W E R SW IT C H The 2N6546 and 2N6547 are multiepitaxial mesa NPN transistors in Jedec TO-3	OCR Scan	2N6546 2N6546 2N6547 300/is, F--01	PDF
Untitled Abstract: No abstract text available Text: 711002b QObTSTfl bS3 • P H I N BSS83 7V MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances.	OCR Scan	711002b BSS83 OT143	PDF
transistor d 1557 Abstract: No abstract text available Text: ^53^31 DDSSblc! bfiS H A P X N AUER PHILIPS/D ISCR ETE BSS83 b?E D J V MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor o f the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances.	OCR Scan	BSS83 OT143 transistor d 1557	PDF

t559 Abstract: No abstract text available Text: SIEMENS BFP 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7,5GHz F = 1 .5 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	900MHz Q62702-F1378 OT-143 fl235bG5 53SLDS t559	PDF
Untitled Abstract: No abstract text available Text: ELANTEC 3129557 ELANTEC INC Tfl » E j 312TSS7 DDDD5S2 INC fl 98° 00 55 2 D ~}' 7 ^ - / 5 ^ EL2 O04:/EL,20O4C HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS 350M H z FET Buffer M C O O w oo c F i- Features General Description • • • • • • • The EL2004 is a very high-speed, FET input buffer/line driver de	OCR Scan	312TSS7 EL2004 350MHz. 500V/ys EL2004/EL2004C 20MHz EL2004â EL2004.	PDF
transistor d 1557 Abstract: BSS83 BR B6S M74 marking philips bss83 BSS83 M74 Text: • fc,b53em []D25fel2 bßS H A P X N AUER PHILIPS/DISCRETE BSS83 b?E D _ MOSFET N-CHANNEL ENHANCEMENT SW ITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SO T143 envelope and features a low ON resistance and low capacitances.	OCR Scan	D25fel2 BSS83 OT143 Z87623 7Z92669 transistor d 1557 BSS83 BR B6S M74 marking philips bss83 BSS83 M74	PDF
M74 marking Abstract: BSS83 M74 MARKING J1A 50J2 BSS83 m74 lg Text: 71 lOfl2b 001^570 bS3 • P H I N B SS8 3 7 V . MOSFET N-CHANNEL ENHANCEMENT S W I T C H IN G TRA N S IS TO R S ym m etrical insulated-gate silicon MOS fie ld -e ffe c t transistor o f the N-channel enhancem ent m ode type. The tran sisto r is sealed in a S O T 143 envelope and features a lo w ON resistance and lo w capacitances.	OCR Scan	BSS83 OT143 7Z87623 711062b 7Z92669. M74 marking BSS83 M74 MARKING J1A 50J2 BSS83 m74 lg	PDF
transistor D 1557 Abstract: d 1556 transistor transistor d 1556 1557 b transistor transistor 1555 Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding, DC/DC and AC/DC	OCR Scan	PHP12N10E T0220AB transistor D 1557 d 1556 transistor transistor d 1556 1557 b transistor transistor 1555	PDF
current mirrors wilson Abstract: 8E-15 2N3906 EP2015ACN EP2015C EP2015CM EP2015CN MPQ3906 TPQ3906 PNP Monolithic Transistor Pair Text: EP2015C/EP2015AC HIGH PERFORMANCE ANALOG INTEGRATED ClRCunS FastQuad PNP Array F eatu res G eneral D escrip tion • • • • • The EP2015 family are quad monolithic vertical P N P transistor arrays which offer excellent parametric matching and high speed performance. The 350 M Hz ft provides A.C. performance	OCR Scan	EP2015C/EP2015AC 2N3906 TPQ3906 MPQ3906 EP2015CN MDP0031 EP2015ACN EP2015CM 20-Lead current mirrors wilson 8E-15 2N3906 EP2015C MPQ3906 PNP Monolithic Transistor Pair	PDF
EL2223CM Abstract: EL2223 EL2223C EL2223CN HA2540 MIL-I-45208A Text: EL2223C Features • W ide gain bandw id th— 500 M H z • H igh slew rate— 350 V/jms • H igh pow er bandw idth ± 10 Vout 5.5 M H z • Large open loop gain 83 dB • Low pow er— 5 m A /am plifier • Low in p u t offset— 0.5 m V typ. • W ide supply voltage range	OCR Scan	EL2223C HA2540s EL2223CN MDP0031 EL2223CM MDP0027 00D3D32 EL2223 EL2223C HA2540 MIL-I-45208A	PDF
2SC1541 Abstract: transistor 1548 b 4500cm Text: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English	OCR Scan	re-25 700mhz, 2sa795 Tc-25 2sa794 2sa900 V156S 100hz, 250pS 2SC1541 transistor 1548 b 4500cm	PDF
2242 Abstract: EL2242 EL2242C EL2242CM EL2242CN MIL-I-45208A QCX0002 "Op Amp" lm 324 Text: élantec EL2242C MGH PERFORMANCE ANALOG INTEGRATED CIRCUITS Features • Inputs and outputs operate at negative supply rail • U nity gain bandwidth—30 M Hz • High slew rate—40 V // as • Settles to 0.01% of a 10V swing in 500 ns • Operates with supplies as low as	OCR Scan	EL2242C MIL-STD-883 12-bit EL2242CN MDP0031 EL2242CM 175Meg 800E-18 EL2242 2242 EL2242C MIL-I-45208A QCX0002 "Op Amp" lm 324	PDF
Untitled Abstract: No abstract text available Text: la n te EL2019C c HIOH PERFORMANCE ANAIÜGINTEGRATED CIRCUITS Fast, High Voltage Comparator with Master Stave Flip-Flop F e a tu r e s G e n e ra l D e sc r ip tio n • Comparator cannot oscillate • F ast response—5 ns data to clock setup, 20 ns clock to output	OCR Scan	EL2019C EL2019 0Q034Ã	PDF

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1557 D TRANSISTOR Search Results

1557 D TRANSISTOR Result Highlights (5)

1557 D TRANSISTOR Datasheets Context Search

EL2018CN

74LS138C

zener 4b7

SRF 3775

metal detector plans

basic circuit diagram of AC servo motor

Untitled

EL2070

1557 b transistor

transistor D 1557

transistor d 1557

2N6547

Untitled

transistor d 1557

t559

Untitled

transistor d 1557

M74 marking

transistor D 1557

current mirrors wilson

EL2223CM

2SC1541

2242

Untitled