1206-8 chipfet
Abstract: Vishay DaTE CODE 1206-8 si5903dc si5903dc-t1-e3
Text: Si5903DC Vishay Siliconix Dual P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.155 at VGS = - 4.5 V ± 2.9 - 20 0.180 at VGS = - 3.6 V ± 2.7 0.260 at VGS = - 2.5 V ± 2.2 • Halogen-free According to IEC 61249-2-21 Definition
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Original
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PDF
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Si5903DC
2002/95/EC
Si5903DC-T1-E3
Si5903DC-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
1206-8 chipfet
Vishay DaTE CODE 1206-8
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Vishay DaTE CODE 1206-8
Abstract: AN811 SI5424DC-T1-GE3 1206-8 chipfet layout
Text: Si5424DC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.024 at VGS = 10 V ID (A)a 6 0.030 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET Qg (Typ.) 11 nC
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PDF
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Si5424DC
Si5424DC-T1-E3
Si5424DC-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
Vishay DaTE CODE 1206-8
AN811
1206-8 chipfet layout
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marking code g1
Abstract: mil 43
Text: Si5515CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 20 0.036 at VGS = 4.5 V 4g 0.041 at VGS = 2.5 V 4g g 0.050 at VGS = 1.8 V 4 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V
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Original
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PDF
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Si5515CDC
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
marking code g1
mil 43
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Untitled
Abstract: No abstract text available
Text: Si5920DC Vishay Siliconix Dual N-Channel 1.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) ID (A) 0.032 at VGS = 4.5 V 4a 0.036 at VGS = 2.5 V 4a 0.045 at VGS = 1.8 V 4a 0.054 at VGS = 1.5 V 4a Qg (Typ.) 7.3 nC • Halogen-free According to IEC 61249-2-21
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Original
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PDF
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Si5920DC
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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mosfet 23 Tsop-6
Abstract: No abstract text available
Text: Si5406DC Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) ID (A) 0.020 at VGS = 4.5 V 9.5 0.025 at VGS = 2.5 V 8.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs: 2.5 V Rated
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Original
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PDF
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Si5406DC
Si5406DC-T1-E3
Si5406DC-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
mosfet 23 Tsop-6
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AN811
Abstract: S0915
Text: Si5475DC Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.031 at VGS = - 4.5 V - 7.6 - 12 0.041 at VGS = - 2.5 V - 6.6 0.054 at VGS = - 1.8 V - 5.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
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Original
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PDF
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Si5475DC
2002/95/EC
Si5475DC-T1-E3
Si5475DC-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
AN811
S0915
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Untitled
Abstract: No abstract text available
Text: Si5515CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 20 0.036 at VGS = 4.5 V 4g 0.041 at VGS = 2.5 V 4g g 0.050 at VGS = 1.8 V 4 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V
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Original
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PDF
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Si5515CDC
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5515DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.040 at VGS = 4.5 V 5.9 20 0.045 at VGS = 2.5 V 5.6 N-Channel P-Channel - 20 0.052 at VGS = 1.8 V 5.2 0.086 at VGS = - 4.5 V - 4.1 0.121 at VGS = - 2.5 V
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Original
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PDF
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Si5515DC
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5933DC Vishay Siliconix Dual P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 3.6 0.160 at VGS = - 2.5 V - 3.0 0.240 at VGS = - 1.8 V - 2.4 Qg (Typ.) 5.1 • Halogen-free According to IEC 61249-2-21
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Original
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PDF
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Si5933DC
2002/95/EC
Si5933DC-T1-E3
Si5933DC-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5504BDC www.vishay.com Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -30 ID (A) 0.065 at VGS = 10 V 4a 0.100 at VGS = 4.5 V 4a 0.140 at VGS = -10 V -3.7 0.235 at VGS = -4.5 V -2.8 1206-8 8 1.
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PDF
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Si5504BDC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5513DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.075 at VGS = 4.5 V 4.2 0.134 at VGS = 2.5 V 3.1 0.155 at VGS = - 4.5 V - 2.9 0.260 at VGS = - 2.5 V - 2.2 • Halogen-free According to IEC 61249-2-21
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Original
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PDF
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Si5513DC
2002/95/EC
Si5513DC-T1-E3
Si5513DC-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si5515DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.040 at VGS = 4.5 V 5.9 20 0.045 at VGS = 2.5 V 5.6 N-Channel P-Channel - 20 0.052 at VGS = 1.8 V 5.2 0.086 at VGS = - 4.5 V - 4.1 0.121 at VGS = - 2.5 V
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Original
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PDF
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Si5515DC
2002/95/EC
Si5515DC-T1-E3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si5975DC Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.086 at VGS = - 4.5 V - 4.1 0.127 at VGS = - 2.5 V - 3.4 0.164 at VGS = - 1.8 V - 3.0 • Halogen-free According to IEC 61249-2-21 Definition
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Original
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PDF
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Si5975DC
2002/95/EC
Si5975DC-T1-E3
Si5975DC-T1-GE3
11-Mar-11
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marking code ED
Abstract: No abstract text available
Text: Si5509DC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.052 at VGS = 4.5 V 6.1a 0.084 at VGS = 2.5 V 4.8a 0.090 at VGS = - 4.5 V - 4.8a 0.160 at VGS = - 2.5 V
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PDF
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Si5509DC
2002/95/EC
Si5509DC-T1-E3
Si5509DC-T1-GE3
11-Mar-11
marking code ED
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Untitled
Abstract: No abstract text available
Text: Si5903DC Vishay Siliconix Dual P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.155 at VGS = - 4.5 V ± 2.9 - 20 0.180 at VGS = - 3.6 V ± 2.7 0.260 at VGS = - 2.5 V ± 2.2 • Halogen-free According to IEC 61249-2-21 Definition
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Original
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PDF
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Si5903DC
2002/95/EC
Si5903DC-T1-E3
Si5903DC-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si5461EDC Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 6.2 0.060 at VGS = - 2.5 V - 5.4 0.082 at VGS = - 1.8 V - 4.6 • Halogen-free According to IEC 61249-2-21 Available • ESD Protectedb 5000 V
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Original
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PDF
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Si5461EDC
Si5461EDC-T1-E3
Si5461EDC-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5463EDC Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.062 at VGS = - 4.5 V - 5.1 0.068 at VGS = - 3.6 V - 4.9 0.085 at VGS = - 2.5 V - 4.4 0.120 at VGS = - 1.8 V - 3.7 • Halogen-free According to IEC 61249-2-21
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Original
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PDF
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Si5463EDC
Si5463EDC-T1-E3
Si5463EDC-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product Si5403DC Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.030 at VGS = - 10 V 6a 0.044 at VGS = - 4.5 V 6a Qg (Typ.) 2 nC • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested
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Original
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PDF
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Si5403DC
Si5403DC-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: Si5402BDC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V 6.7 0.042 at VGS = 4.5 V 6.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET 1206-8 ChipFET®
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Original
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PDF
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Si5402BDC
Si5402BDC-T1-E3
Si5402BDC-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5933DC Vishay Siliconix Dual P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 3.6 0.160 at VGS = - 2.5 V - 3.0 0.240 at VGS = - 1.8 V - 2.4 Qg (Typ.) 5.1 • Halogen-free According to IEC 61249-2-21
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Original
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PDF
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Si5933DC
2002/95/EC
Si5933DC-T1-E3
Si5933DC-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: r THIS DRAWING IS UNPUBUSHED. COPYRIGHT 1996 RELEASED FOR PUBLICATION AUG .1 9 9 6 . REVISIONS ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. DESCRIPTION FJBO—036 6 —03 REVISED D 15JAN04 0 .3 U i ! M 1! ' 1 ' L : APVD J.T H.M - 1 AS SHOWN liti ih 11 f
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OCR Scan
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PDF
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15JAN04
31MAR2000
05AUG98
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Untitled
Abstract: No abstract text available
Text: H r THIS DRAWING IS UNPUBUSHED. COPYRIGHT 199 6 RELEASED FOR PUBLICATION JUL .1 9 9 6 . BY TYCO ELECTRONICS CORPORATION. REVISIONS LOC ALL RIGHTS RESERVED. J R LTR ^ - n DESCRIPTION REVISED DATE FJBO— 0 3 6 6 — 03 15JAN04 DWN APVD J.T H.M 8.3 D 0.3 D -1 : M
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OCR Scan
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PDF
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15JAN04
06AUG03
31MAR2000
14APR98
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connector type n
Abstract: EN22
Text: H r THIS DRAWING IS UNPUBUSHED. COPYRIGHT 199 6 RELEASED FOR PUBLICATION JUL .1 9 9 6 . BY TYCO ELECTRONICS CORPORATION. REVISIONS LOC ALL RIGHTS RESERVED. J LTR H D DESCRIPTION REVISED DATE FJBO— 0 3 6 6 — 03 15JAN04 DWN APVD J.T H.M D -1 : M AS SHWN
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OCR Scan
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PDF
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15JAN04
UL94V-0)
17JUL96
DEC98
002mm
00127mm
0003mm
connector type n
EN22
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Untitled
Abstract: No abstract text available
Text: 7 DRAWI NG THIS MADE IN THIRD DRAWING ANGLE 6 5 15 U N P U B L I 5 H E D COPYRIGHT 19 RELEASED BY AMP FOR PUBLICATION INCORPORATED. ALL 4 <3> PROJECTIO N 3 2 INTERNATIONAL RIGHTS DI S T LOC 19 AD RESERVED. REV I 5 I0N5 47 ZONE LTR D E 5 C R I R T I ON HOUSING S ORGANIZER NATERI AN
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OCR Scan
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PDF
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15JAN04
D5138-NCP000G30A32250,
us037123
/home/us037123/edmmod/OS12ecs
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