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    SI5402BDC Price and Stock

    Vishay Siliconix SI5402BDC-T1-E3

    MOSFET N-CH 30V 4.9A 1206-8
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    DigiKey SI5402BDC-T1-E3 Digi-Reel 1
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    RS SI5402BDC-T1-E3 Bulk 3,000
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    Vishay Siliconix SI5402BDC-T1-GE3

    MOSFET N-CH 30V 4.9A 1206-8
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    DigiKey SI5402BDC-T1-GE3 Digi-Reel 1
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    Vishay Intertechnologies SI5402BDC-T1-E3

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    Bristol Electronics SI5402BDC-T1-E3 974
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    SI5402BDC Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI5402BDC Vishay Telefunken Original PDF
    SI5402BDC-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 4.9A 1206-8 Original PDF
    SI5402BDC-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 4.9A 1206-8 Original PDF

    SI5402BDC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si5402BDC

    Abstract: No abstract text available
    Text: Si5402BDC New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.035 @ VGS = 10 V 6.7 0.042 @ VGS = 4.5 V 6.1 D 1206-8 ChipFETr 1 D D D D D D G G S Marking Code AD XXX Lot Traceability


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    PDF Si5402BDC Si5402BDC-T1--E3 18-Jul-08

    Si5402BDC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5402BDC Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    PDF Si5402BDC 18-Jul-08

    8843

    Abstract: AN609 Si5402BDC
    Text: Si5402BDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF Si5402BDC AN609 12-Jun-07 8843

    Untitled

    Abstract: No abstract text available
    Text: Si5402BDC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V 6.7 0.042 at VGS = 4.5 V 6.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET 1206-8 ChipFET®


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    PDF Si5402BDC Si5402BDC-T1-E3 Si5402BDC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si5402BDC

    Abstract: Si5402BDC-T1-GE3
    Text: Si5402BDC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V 6.7 0.042 at VGS = 4.5 V 6.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET 1206-8 ChipFET®


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    PDF Si5402BDC Si5402BDC-T1-E3 Si5402BDC-T1-GE3 18-Jul-08

    1206-8

    Abstract: Si5402BDC
    Text: Si5402BDC New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.035 @ VGS = 10 V 6.7 0.042 @ VGS = 4.5 V 6.1 D 1206-8 ChipFETr 1 D D D D D D G G S Marking Code AD XXX Lot Traceability


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    PDF Si5402BDC Si5402BDC-T1--E3 08-Apr-05 1206-8

    S83054

    Abstract: No abstract text available
    Text: Si5402BDC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V 6.7 0.042 at VGS = 4.5 V 6.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET 1206-8 ChipFET®


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    PDF Si5402BDC Si5402BDC-T1-E3 Si5402BDC-T1-GE3 11-Mar-11 S83054

    Untitled

    Abstract: No abstract text available
    Text: Si5402BDC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V 6.7 0.042 at VGS = 4.5 V 6.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET 1206-8 ChipFET®


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    PDF Si5402BDC Si5402BDC-T1-E3 Si5402BDC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    1206-8

    Abstract: marking code AD Si5402BDC
    Text: Si5402BDC New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.035 @ VGS = 10 V 6.7 0.042 @ VGS = 4.5 V 6.1 D 1206-8 ChipFETr 1 D D D D D D G G S Marking Code AD XXX Lot Traceability


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    PDF Si5402BDC Si5402BDC-T1--E3 S-41495--Rev. 09-Jun-04 1206-8 marking code AD

    Si5402DC

    Abstract: Si5402BDC Si5402DC-T1 74062 SI5402BDC-T1-E3
    Text: Specification Comparison Vishay Siliconix Si5402BDC vs. Si5402DC Description: Package: Pin Out: N-Channel, 30-V D-S MOSFET 1206-8 ChipFET Identical Part Number Replacements: Si5402BDC-T1-E3 Replaces Si5402DC-T1-E3 Si5402BDC-T1-E3 Replaces Si5402DC-T1 Summary of Performance:


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    PDF Si5402BDC Si5402DC Si5402BDC-T1-E3 Si5402DC-T1-E3 Si5402DC-T1 74062

    Si5402DC

    Abstract: Si5402DC-T1 Si5402BDC
    Text: Specification Comparison Vishay Siliconix Si5402BDC vs. Si5402DC Description: N-Channel, 30 V D-S MOSFET Package: 1206-8 ChipFET Pin Out: Identical Part Number Replacements: Si5402BDC-T1-E3 Replaces Si5402DC-T1-E3 Si5402BDC-T1 Replaces Si5402DC-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


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    PDF Si5402BDC Si5402DC Si5402BDC-T1-E3 Si5402DC-T1-E3 Si5402BDC-T1 Si5402DC-T1 09-Nov-06

    Untitled

    Abstract: No abstract text available
    Text: Si5402BDC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V 6.7 0.042 at VGS = 4.5 V 6.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET 1206-8 ChipFET®


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    PDF Si5402BDC Si5402BDC-T1-E3 Si5402BDC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


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    PDF SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


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    PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


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    PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


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    PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    murata x7r capacitor 0603

    Abstract: GRM32ER71C226KE18L
    Text: Preliminary Technical Data ADP1823, APD2106 and ADP1821 Reference Design FCDC 00043 FEATURES Six Output Voltages: 1.2 V, 1.8 V, 2.5 V, 3.3 V, 5 V, 12 V Output Current: 1 A to 4.5 A Input voltage: 14.4-20.0 V Ripple 2% ppk of Output Voltage Transient step ±5%, 50% max load


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    PDF ADP1823, APD2106 ADP1821 ADP1821 QSOP-16 murata x7r capacitor 0603 GRM32ER71C226KE18L

    SiE800DF

    Abstract: Power MOSFETs Application Notes Si1413EDH Si4346DY Si4368DY Si7478DP SUD15N06-90L SUM110N04-02L 12026c thermal SIMULATION
    Text: Appendices for Application Note 832 Vishay Siliconix ThermaSim On-Line Thermal Simulation for Vishay Siliconix Power MOSFETs Appendix "A" Worksheet File Name: Vishay Power MOSFET Part [1] # Power Specification: Steady State: _ W [0.1 ≤ Power Value ≤ 100 - package limited]


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    PDF Siz39 SUM110N04-02L SI7409ADN SiE800DF Power MOSFETs Application Notes Si1413EDH Si4346DY Si4368DY Si7478DP SUD15N06-90L 12026c thermal SIMULATION

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


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    PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477

    gs 069

    Abstract: PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04
    Text: N-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


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    PDF SC-75 SC-75A SC-89 gs 069 PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04