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    Teledyne e2v QP7C198-15LMB

    STATIC RAM, 32K X 8, 15 NS ACCESS TIME - Rail/Tube (Alt: QP7C198-15LMB)
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    Avnet Americas QP7C198-15LMB Tube 250
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    Teledyne e2v QP7C199L-15LMB

    STATIC RAM, 32K X 8, LOW-POWER, 15 NS AC - Rail/Tube (Alt: QP7C199L-15LMB)
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    Teledyne e2v PALC22V10B-15LMB

    PROG. LOGIC DEVICE, 22-INPUT 10-OUTPUT, - Rail/Tube (Alt: PALC22V10B-15LMB)
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    Teledyne e2v PALCE16V8-15LMB

    PROG. LOGIC DEVICE, ELECTR. ERASABLE, 16 - Rail/Tube (Alt: PALCE16V8-15LMB)
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    Teledyne e2v CY7C466A-15LMB

    MEMORY, 64K X 9 CASCADABLE FIFO, 15 NS A - Rail/Tube (Alt: CY7C466A-15LMB)
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    15LMB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY7C187

    Abstract: CY7C187A
    Text: CY7C187A 64K x 1 Static RAM Features provided by an active LOW chip enable CE and three-state drivers. The CY7C187A has an automatic power-down feature, reducing the power consumption by 55% when deselected. • High speed — 20 ns • CMOS for optimum speed/power


    Original     		PDF CY7C187A CY7C187A CY7C187

    C401 diode

    Abstract: 10DC IR transistor 10dc ir C4016 C4019 C401 CY7C401 CY7C402 CY7C403 C4013
    Text: CY7C401/CY7C403 CY7C402/CY7C404 64 x 4 Cascadable FIFO 64 x 5 Cascadable FIFO Features words. Both the CY7C403 and CY7C404 have an output enable OE function. • 64 x 4 (CY7C401 and CY7C403) 64 x 5 (CY7C402 and CY7C404) High-speed first-in first-out memory (FIFO)


    Original     		PDF CY7C401/CY7C403 CY7C402/CY7C404 CY7C403 CY7C404 CY7C401 CY7C403) CY7C402 CY7C404) 25-MHz 50-ns C401 diode 10DC IR transistor 10dc ir C4016 C4019 C401 C4013

    P4C148

    Abstract: P4C149
    Text: P4C148, P4C149 ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Two Options – P4C148 Low Power Standby Mode – P4C149 Fast Chip Select Control High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45/55 ns (Commercial) – 15/20/25/35/45/55 ns (P4C148 Military)


    Original     		PDF P4C148, P4C149 P4C148 P4C149 096-bit

    P4C150

    Abstract: No abstract text available
    Text: P4C150 ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM FEATURES Separate Input and Output Ports Full CMOS, 6T Cell Three-State Outputs High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial) – 15/20/25/35 ns (Military) Fully TTL Compatible Inputs and Outputs


    Original     		PDF P4C150 24-Pin 28-Pin P4C150 096-bit requires300 SRAM105

    P4C147

    Abstract: No abstract text available
    Text: P4C147 ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell Single 5V ± 10% Power Supply High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial) – 15/20/25/35 ns (Military) Separate Input and Output Ports Three-State Outputs


    Original     		PDF P4C147 SRAM103 SRAM103 P4C147 Oct-05

    P4C168

    Abstract: P4C169 P4C170
    Text: P4C168, P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible, Common I/O Ports High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (P4C168 Military) Three Options


    Original     		PDF P4C168, P4C169, P4C170 12/15/20/25/35ns 20/25/35/45/55/70ns P4C168 P4C169 P4C170 P4C168

    CY7C185A-20LMB

    Abstract: C185A CY7C185 CY7C185A 624a2
    Text: 1CY 7C18 5A CY7C185A 8K x 8 Static RAM Features • High speed — 20 ns • CMOS for optimum speed/power • Low active power — 743 mW • Low standby Power — 220 mW • TTL-compatible inputs and outputs • Easy memory expansion with CE1, CE2 and OE features


    Original     		PDF CY7C185A CY7C185A 300-mil-wide CY7C185A-20LMB C185A CY7C185 624a2

    7cl6

    Abstract: D-2501 CY7C161A CY7C162 CY7C162A
    Text: CYPRESS SEMICONDUCTOR 4bE » B SSfl'lbfe.S □ QQbMSb b q c y p CY7C161A CY7C162A • - j/ "— = 16,384 x 4 Static RAV RAM Separate I/O SEMICONDUCTOR Features • Automatic power-down when dese­ lected • Transparent write 7C161A • CMOS for optimum speed/power


    OCR Scan     		PDF CY7C161A CY7C162A 7C161A) CY7C162 au62A-35DMB CY7C162Aâ 35KMB CY7C162A-35LMB CY7C162A-45DMB 7cl6 D-2501 CY7C162A

    K73 Package

    Abstract: 3 phase inverter schematic diagram 7C166 CY7C164A CY7C166A CI64A CY7C164A-45DMB
    Text: 4bE D CYPRESS SEM IC ON DU CT OR □ - p q & eSÛ'IbbE OQObMfiS 2 R3CYP .r S - l O C Y 7 C I6 4 A C Y 7 C 1 6 6 A ";ui'./^CTPRESS , _ SEMICONDUCTOR 16,384 x 4 Static R/W RAM Features Functional Description • Automatic power-down when


    OCR Scan     		PDF CY7C164A CY7C166A 384x4 CY7C166A 35DMB CY7C166Aâ 35KMB CY7C166A-35LMB K73 Package 3 phase inverter schematic diagram 7C166 CI64A CY7C164A-45DMB

    7C192-12

    Abstract: 7C192-15 7C192-20 A10C CY7C191 CY7C192 CY7C192-25PC
    Text: MbE D CYPRESS SEMICON DUC TOR B 250^fc,b2 OOQfc.1,42 3 E 3 C Y P CY7C191 CY7C192 CYPRESS SEMICONDUCTOR Features • Automatic power-down when deselected • Transparent write 7C19X • CMOS for optimum speed/power • H ighspeed — tM = 25 ns • Low active power


    OCR Scan     		PDF CY7C191 CY7C192 7C19X) TheCY7C191 CY7C192 CY7C192-45VC CY7C192-45DMB CY7C192-45KMB CY7C192â 45LMB 7C192-12 7C192-15 7C192-20 A10C CY7C192-25PC

    AB26S

    Abstract: 7C109A CY7C109 CY7C109A
    Text: CY7C109A PRELIMINARY l ^wSSQBBSf S S ySSt Ì p YJe JkP XRI- XjiïJF ^ 128KX 8 Static RAM Features Functional Description • H ighspeed The CY7C109A is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable


    OCR Scan     		PDF CY7C109A 128Kx CY7C109A AB26S 7C109A CY7C109

    12L10

    Abstract: 16L6 20L10 20L8 PLD20G10C 12DC
    Text: 4bE SEMICONDUCTOR SSÔTbtS D OGGbTMM PRELIMINARY CYPRESS SEMICONDUCTOR Features • Ultra high speed supports today’s and tomorrow’s fastest microprocessors — tpD = 7.5 ns — tsu = 3 ns — fM A X = 1 0 5 M tte • Reduced ground bounce and under­


    OCR Scan     		PDF PLD20G10C 24-Pin 10SMHZ 20L10, 12L10 PLD20G10C- 10KMB 10LMB 16L6 20L10 20L8 PLD20G10C 12DC

    CY7C1009

    Abstract: 7C1009 A14C
    Text: PRELIMINARY r y f|pPA RJL- lrP Anni I CY7C1009 128Kx 8 Static RAM Features Functional Description • Highspeed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW • Low standby power — 250 mW The CY7C1009 is a high-performance


    OCR Scan     		PDF CY7C1009 550-mil CY7C1009 7C1009 A14C

    Untitled

    Abstract: No abstract text available
    Text: CY7B194 CY7B195 CY7B196 PRELIMINARY CYPRESS SEMICONDUCTOR 65,536 x 4 Static R/W RAM Features Functional Description • High speed — tAA = 10 ns • BiCMOS for optimum speed/power • Low active power — 825 mW • Low standby power — 330 mW • Automatic power-down when


    OCR Scan     		PDF CY7B194 CY7B195 CY7B196 CY7B195 CY7B196 CY7B194, 7B195,

    Untitled

    Abstract: No abstract text available
    Text: CY7B180 CY7B181 s CYPRESS SEMICONDUCTOR 4K x 18 Cache Tag Features • Can be used as 4K x 18 SRAM • Supports 66-MHz cache for all major high-speed processors Functional Description T he CY7B180 and CY7B181 are high-perform ance B iC M O S cache tag R A M s orga­


    OCR Scan     		PDF CY7B180 CY7B181 66-MHz CY7B180 CY7B181 16-bit 7B180 CY7B181. 15LMB

    Untitled

    Abstract: No abstract text available
    Text: PAL22V10C _ PAL22VP10C Universal PAL Device SEMICONDUCTOR Features • • Ultra high speed supports today’s and tomorrow’s fastest microprocessors 10 user>programmable output macrocells — Output polarity control — Registered or combinatorial


    OCR Scan     		PDF PAL22V10C PAL22VP10C PAL22VP10C) 28-Pin PAL22VP10CM 28-Square PAL22VP10CM 15KMB 12YMB

    Untitled

    Abstract: No abstract text available
    Text: CY7B161 CY7B162 f ' YPPI7QC! SEMICONDUCTOR Features Functional Description • U ltra high speed — 8 ns tAA • Low active power — 700 mW • Low standby power — 250 mW • Transparent write (7B161 • BiCMOS for optimum speed/power • TTL-compatible inputs and outputs


    OCR Scan     		PDF CY7B161 CY7B162 7B161) CY7B161 CY7B162 7B161 8-A-00014-D

    Untitled

    Abstract: No abstract text available
    Text: 7 PLD20G10C C YPRESS • Features • Ultra high speed supports today’s and tomorrow’s fastest microprocessors Generic 24-Pin PAL Device 10 user-programmable output macrocells — Output polarity control — Registered or combinatorial operation — tpo = 7.5 ns


    OCR Scan     		PDF PLD20G10C 24-Pin 24-Lead 300-MU) 28-Lead 300-Mil)

    Untitled

    Abstract: No abstract text available
    Text: PALCE16V8 V CYPRESS Features • • A ctive p u ll-u p on d ata in p u t p in s • Low pow er version 16V 8L • • — 5 5 m A m ax. com m ercial (1 0 ,1 5 ,2 5 n s) — 65 mA max. industrial (1 0 ,1 5 ,2 5 ns) — 65 m A m ilitary (15 an d 25 n s) •


    OCR Scan     		PDF PALCE16V8 PALCE16V8 20-Lead 300-Mil) PALCE16V8Lâ 20-Lead PALCE16V8L- LCE16V8L-

    Untitled

    Abstract: No abstract text available
    Text: CY7B180 CY7B181 PRELIMINARY CYPRESS SEMICONDUCTOR Features 4K x 18 Cache Tag • Can be used as 4K x 18 SRAM Functional Description Supports 50-MHz cache for all major high-speed processors 4K x 18 tag organization BiCMOS for optimum speed/power High speed


    OCR Scan     		PDF CY7B180 CY7B181 50-MHz 12-ns 15-ns CY7B180) CY7B181) CY7B181â CY7B180â

    Untitled

    Abstract: No abstract text available
    Text: CY7B191 CY7B192 PRELIMINARY F CYPRESS SEMICONDUCTOR 64Kx 4 Static R/W RAM with Separate I/O Features Functional Description • High speed T he CY7B191 and CY7B192 are highperformance BiCMOS static RAM s orga­ nized as 64K words by 4 bits with separate I/O. Easy m em oiy expansion is provided


    OCR Scan     		PDF CY7B191 CY7B192 CY7B191 CY7B192 7B191) 7B191

    Untitled

    Abstract: No abstract text available
    Text: CY7C401/CY7C403 CY7C402/CY7C404 s CYPRESS SEMICONDUCTOR Cascadeable 64 x 4 FIFO and 6 4 x 5 FIFO Features Functional Description • 64 x 4 CY7C401 and CY7C403 64 X 5 (CY7C402 and CY7C404) High-speed first-in first-out memory (FIFO ) T he CY7C401 and CY 7C403 are asynchronousfirst-in first-out m em ories (F IF O s)


    OCR Scan     		PDF CY7C401/CY7C403 CY7C402/CY7C404 CY7C401 CY7C403) CY7C402 CY7C404) 7C403 7C402 7C404

    ATA 2388

    Abstract: No abstract text available
    Text: CY7B193 ADVANCED INFORMATION CYPRESS SEMICONDUCTOR 262,144 x 1 Static R/W RAM Features Functional Description • H igh speed T h e CY7B193 is a high-perform ance BiCM OS static R A M organized as 262,144 words by 1 bit. Easy m em ory expansion is provided by an active L O W chip enable


    OCR Scan     		PDF CY7B193 CY7B193 ATA 2388

    Untitled

    Abstract: No abstract text available
    Text: CYPRESS SEMICONDUCTOR Flash Erasable, Reprogrammable CMOS PAL Device DIP, LCC, and PLCC available — 7.5 ns commercial version 5 ns tco 5 ns t§ 7.5 ns tpo 133-MHz state machine — 10 ns military and industrial ver­ sions 6 ns tco 6 ns tg 10 ns tpo 110-MHz state machine


    OCR Scan     		PDF 133-MHz 110-MHz 15-ns 25-ns 28-Square 24-Lead PALC22V10Dâ PALC22V10D 24-Lead 300-Mil)