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    160 173 TRANSISTOR Search Results

    160 173 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    160 173 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C67078-S1452-A2

    Abstract: 160 173 TRANSISTOR
    Text: BUZ 173 SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 173 -200 V -3.6 A 1.5 Ω TO-220 AB C67078-S1452-A2 Maximum Ratings Parameter Symbol Continuous drain current


    Original     		PDF O-220 C67078-S1452-A2 C67078-S1452-A2 160 173 TRANSISTOR

    C67078-S1452-A2

    Abstract: No abstract text available
    Text: BUZ 173 SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 173 -200 V -3.6 A 1.5 Ω TO-220 AB C67078-S1452-A2 Maximum Ratings Parameter Symbol Continuous drain current


    Original     		PDF O-220 C67078-S1452-A2 C67078-S1452-A2

    ericsson 10159

    Abstract: PTF10159 470-860 mhz Power amplifier w
    Text: PTF 10159 120 Watts, 470–860 MHz GOLDMOS Field Effect Transistor Description The PTF 10159 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for large signal television amplifier applications from 470 to 860 MHz. It is rated at 120 watts power


    Original     		PDF UT-85-25 1-877-GOLDMOS 1301-PTF ericsson 10159 PTF10159 470-860 mhz Power amplifier w

    VK200 19 4B INDUCTOR

    Abstract: arco 462 capacitor capacitor 680 s12 diode VK200 4B inductor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single


    Original     		PDF MRF275L VK200 19 4B INDUCTOR arco 462 capacitor capacitor 680 s12 diode VK200 4B inductor

    ericsson 10159

    Abstract: PTF 10159 10159 atc 174 capacitor siemens 4700 35 G200 K1206 UT-85-25 470-860 mhz Power amplifier w UT85-25
    Text: PTF 10159 120 Watts, 470–860 MHz GOLDMOS Field Effect Transistor Description The PTF 10159 is an internally matched, LDMOS FET intended for large signal television amplifier applications from 470 to 860 MHz. It is rated at 130 watts power output. Nitride surface passivation and


    Original     		PDF UT-85-25 1-877-GOLDMOS 1301-PTF ericsson 10159 PTF 10159 10159 atc 174 capacitor siemens 4700 35 G200 K1206 470-860 mhz Power amplifier w UT85-25

    DL110

    Abstract: VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF275L VK200 sony+IMX+179
    Text: Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single


    Original     		PDF MRF275L/D MRF275L DL110 VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF275L VK200 sony+IMX+179

    0.047 mf capacitor

    Abstract: No abstract text available
    Text: GOLDMOS PTF 10137 Field Effect Transistor 12 Watts, 1.0 GHz Description The PTF 10137 is a 12–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 60% efficiency with 18 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.


    Original     		PDF P4525-ND P5182-ND 1-877-GOLDMOS 1522-PTF 0.047 mf capacitor

    UNELCO

    Abstract: S11 zener diode motorola MOSFET 935 AN211A MRF275L VK200 VK200 4B inductor
    Text: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single


    Original     		PDF MRF275L/D MRF275L UNELCO S11 zener diode motorola MOSFET 935 AN211A MRF275L VK200 VK200 4B inductor

    capacitor 0,1 mF 50V

    Abstract: 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM G200 2000 watts power amplifier circuit diagram
    Text: PTF 10137 12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10137 is a 12 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 60% efficiency with 18 dB of gain. Nitride surface passivation and full gold metallization


    Original     		PDF P4525-ND P5182-ND 1-877-GOLDMOS 1301-PTF capacitor 0,1 mF 50V 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM G200 2000 watts power amplifier circuit diagram

    G200

    Abstract: No abstract text available
    Text: PTF 10137 12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10137 is an internally matched 12–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 60% efficiency with 18 dB gain. Nitride surface passivation


    Original     		PDF P4525-ND P5182-ND 1-877-GOLDMOS 1522-PTF G200

    945 TRANSISTOR

    Abstract: 700B AN1294 PD57018 PD57018S
    Text: PD57018 PD57018S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 18 W WITH 16.5 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE PowerSO-10RF


    Original     		PDF PD57018 PD57018S PowerSO-10RF PD57018 945 TRANSISTOR 700B AN1294 PD57018S

    945 TRANSISTOR

    Abstract: 700B AN1294 PD57018 PD57018S
    Text: PD57018 PD57018S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 18 W WITH 16.5 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE


    Original     		PDF PD57018 PD57018S PowerSO-10RF PD57018 945 TRANSISTOR 700B AN1294 PD57018S

    945 TRANSISTOR

    Abstract: 700B PD57018 PD57018S resistor 1 k ohm stmicroelectronics 402 transistor 650
    Text: PD57018 PD57018S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 18 W WITH 16.5 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE


    Original     		PDF PD57018 PD57018S PowerSO-10RF PD57018 945 TRANSISTOR 700B PD57018S resistor 1 k ohm stmicroelectronics 402 transistor 650

    Untitled

    Abstract: No abstract text available
    Text: PD57018 PD57018S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 18 W WITH 16.5 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE


    Original     		PDF PD57018 PD57018S PowerSO-10RF PD57018

    j608

    Abstract: 10R1 MRF6522-10R1
    Text: MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the


    Original     		PDF MRF6522 MRF6522-10R1 j608 10R1 MRF6522-10R1

    MRF6522-10

    Abstract: MRF6522-10R1 10R1 Ni200 mosfet 4496
    Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the


    Original     		PDF MRF6522 MRF6522-10R1 MRF6522-10 MRF6522-10R1 10R1 Ni200 mosfet 4496

    VFD037B43A

    Abstract: VFD075B43A VFD007B23A VFD022B43B VFD300 VFD015B43A VFD110B43A VFD015B53A VFD015B23A VFD150B43A
    Text: v a n s - Ä hEUA D Dimensöe Eexternas Dimensöes Externas DELTA ELECTRONICS, INC Dimensöes u nidade: mm Modelo W W1 H H1 D Refrigerado por ventoinha VFD007B21A 118 4.65 108(4.25) 185(7.28) 173(6.81) 160(6.30) NO VFD007B23A 118(4.65) 145(5.71) NO VFD007B43A


    OCR Scan     		PDF VFD007B21A VFD007B23A VFD007B43A VFD007B53A VFD015B21A VFD015B21B VFD015B23A VFD015B23B VFD015B43A VFD015B53A VFD037B43A VFD075B43A VFD022B43B VFD300 VFD110B43A VFD150B43A

    transistor BF 509

    Abstract: 479S bf diode transistor bf 271 transistors for uhf oscillators bf 107 a transistors bf UHF "AGC Amplifier" BF479 UHF pnp transistor
    Text: CONSUMER TRANSISTORS IF amplifiers @ > o LU U o m and @ ÍD < < O E ai > < I- C3 Q_ @ CL □ a. BF 158 BF 160 BF 167 BF BF BF BF 173 251 271 274 BF 288 BF 454 BF 455 NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN »TO-18 epoxy IF amplifier for T V IF amplifier for A M -F M radio


    OCR Scan     		PDF T0-18 transistor BF 509 479S bf diode transistor bf 271 transistors for uhf oscillators bf 107 a transistors bf UHF "AGC Amplifier" BF479 UHF pnp transistor

    Transistors BF 324

    Abstract: AM-FM TUNER BF252 UHF "AGC Amplifier" AGC Amplifiers radio diode SR 506 "AGC Amplifier" bf 245 fa 506 bf 233
    Text: CONSUMER TRANSISTORS IF amplifiers @ o o m LU U ai > > and @ ÍD < < O < E I- C3 CL Q_ @ □ a . BF 158 NPN IF a m p lifie r fo r T V BF 160 NPN IF a m p lifie r fo r AM -FM radio 12 12 BF 167 NPN AG C-l F a m p lifie r fo r T V 30 BF 173 NPN IF vision am p-output stage


    OCR Scan     		PDF T0-18 00U1CJ1CJ10 O-7211) Transistors BF 324 AM-FM TUNER BF252 UHF "AGC Amplifier" AGC Amplifiers radio diode SR 506 "AGC Amplifier" bf 245 fa 506 bf 233

    transistor 2SC930

    Abstract: mps9426 2sc929 2SC948 3854AN 2N4995 2SC838 2SC839 4935N BFX60
    Text: S E M I C O N D U C T O R S INC QTE D | S l B b b S O G G O Q S ? ^ M | *7”" POLARITY RF-IF High Frequency Transistors CASE BF BF BF BF BF 115 152 153 155 158 N N N N N TO-72J TO-106 TO-106 TO-72G TO-106 BF BF BF BF BF 159 160 173 181 182 N N N N N TO-106


    OCR Scan     		PDF O-72J O-106 O-72G -26UNF-2A O-48D transistor 2SC930 mps9426 2sc929 2SC948 3854AN 2N4995 2SC838 2SC839 4935N BFX60

    PTF10027

    Abstract: ericsson 10027 f 0952
    Text: ERICSSON $ PTF 10027 12 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10027 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 12 watts minimum output power. Nitride surface passivation


    OCR Scan     		PDF IEC-68-2-54 Std-002-A P4917-ND P5276 5801-PC 20AWG, PTF10027 ericsson 10027 f 0952

    ic 0941

    Abstract: ericsson 10027 10027 mosfet SIEMENS B 58 371 R/Atmel 0947
    Text: E R IC SSO N í PTE 10027* 12 Watts, H F - 1 . 0 GHz L D M O S Field Effect Transistor Description The 10027 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 18 watts minimum output power. Nitride surface passivation


    OCR Scan     		PDF P4917-ND P5276 5801-PC ic 0941 ericsson 10027 10027 mosfet SIEMENS B 58 371 R/Atmel 0947

    transistor mj 4035

    Abstract: tc 785 siemens SC160
    Text: SIEMENS BUZ 173 SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Type BUZ173 Vbs -200 V b -3.6 A ^DS on Package Ordering Code 1.5 n TO-220 AB C67078-S1452-A2 Maximum Ratings Parameter Symbol Continuous drain current Values


    OCR Scan     		PDF BUZ173 O-220 C67078-S1452-A2 transistor mj 4035 tc 785 siemens SC160

    2SC1600

    Abstract: NE57510 NE57500 ne575 2SC1042 2SC1642 NE57520 321E S21E 2SC164
    Text: NEC/ CALIFORNIA NEC SbE D b4S7414 00053^^ 4TS * N E C C T ^ - o s NE57500 NE57510 NE57520 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 700 m W at 1.7 GHz The NE575 series of NPN silicon medium power transistors is


    OCR Scan     		PDF b4S7414 NE57500 NE57510 NE57520 NE575 2SC1600 2SC1042 2SC1642 NE57520 321E S21E 2SC164