NE57500 Search Results

NE57500 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NE57500		NEC	NPN Medium Power Microwave Transistor		Scan	PDF

NE57500 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
40MAG Abstract: NE57510 Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE57500 NE57510 FEATURES DESCRIPTION • HIG H O S C ILLA TO R PO W ER O U TPU T: 700 m W at 1.7 G Hz The NE575 series of NPN silicon medium powertransistors is designed to operate in amplifiers and oscillators up to 2 GHz	OCR Scan	PDF	NE57500 NE57510 NE575 2S21I NE57500, NE57510 NE57500 40MAG
Untitled Abstract: No abstract text available Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE57500 NE57510 FEATURES DESCRIPTION • HIGH O SCILLATO R O UTPUT PO W ER : T h e N E 5 7 5 series of N P N silicon medium pow er transistors is designed to operate in amplifiers and oscillators up to 2 G H z with supply voltages up to 18 volts. Transistors in this series	OCR Scan	PDF	NE57500 NE57510 NE57500, NES7500
2SC1600 Abstract: ne57500 NE57510 Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE57500 NE57510 FEATURES DESCRIPTION • HIGH OSCILLATOR OUTPUT POWER : 700 mW at 1.7 GHz The NE575 series of NPN silicon medium power transistors is designed to operate in amplifiers and oscillators up to 2 GHz with supply voltages up to 18 volts. Transistors in this series	OCR Scan	PDF	NE57500 NE57510 NE575 b42752S 00b5b43 NE57500, 2SC1600 NE57510
2SC1600 Abstract: NE57510 NE57500 ne575 2SC1042 2SC1642 NE57520 321E S21E 2SC164 Text: NEC/ CALIFORNIA NEC SbE D b4S7414 00053^^ 4TS * N E C C T ^ - o s NE57500 NE57510 NE57520 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 700 m W at 1.7 GHz The NE575 series of NPN silicon medium power transistors is	OCR Scan	PDF	b4S7414 NE57500 NE57510 NE57520 NE575 2SC1600 2SC1042 2SC1642 NE57520 321E S21E 2SC164
SVI 3104 c Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720 Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or	OCR Scan	PDF	AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
73412 Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318 Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7	OCR Scan	PDF	NE46134 NE85634 NE46734 NE85634 NE46134 NE85619 NE68119 73412 NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
transistor IR 324 C Abstract: transistor selection guide Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency d B Gain Optimum Figure, G a (d B ) Noise Noise Figure, N F opt at Optimum F re q u e n c y , f (G H z ) Typical Output Power and Gain vs. Frequency	OCR Scan	PDF	NE46134 NE85634 NE46134 NE46734 NE68018-T1 transistor IR 324 C transistor selection guide