IRK E78996 701819-303ac
Abstract: design sine wave power inverter irkv 300 irkv 142-08 E78996 datasheet full bridge IRK.136 INVERTER 94V0 IR E78996 IRK E78996 IRK E78996 p432
Text: Bulletin I27101 rev. B 04/98 IRK. SERIES INT-A-pakä Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR 135 A 140 A 160 A Features High voltage Electrically isolated base plate 3000 V RMS isolating voltage Industrial standard package Simplified mechanical designs, rapid assembly
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I27101
E78996
10ohms;
10ohms
IRK E78996 701819-303ac
design sine wave power inverter
irkv 300
irkv 142-08
E78996 datasheet full bridge
IRK.136
INVERTER 94V0
IR E78996
IRK E78996
IRK E78996 p432
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uPC2581
Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8
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PD7500
X10679EJAV0SG00
MF-1134)
1995P
uPC2581
uPC2002
2sd1557
uPA67C
uPB582
upc1237
uPC317
2P4M PIN DIAGRAM
2SC4328
uPC157
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marking L8s
Abstract: marking L7s diode TS SOT23
Text: BAR 14-1 . BAR 16-1 Silicon PIN Diodes 3 • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics 2 BAR 14-1 BAR 15-1 BAR 16-1 3 3 3 1 2 1 2 1 VPS05161 2 EHA07006 EHA07004 EHA07005
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VPS05161
EHA07006
EHA07004
EHA07005
OT-23
EHD07065
EHD07068
100MHz
marking L8s
marking L7s diode
TS SOT23
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A773
Abstract: A773* Transistor Q62702-A773 Q62702-A772 a772 A773 5 pin sot-23 diode l8 Q62702-A731 sot-23 diode L9 A731
Text: Silicon PIN Diodes BAR 14-1 … BAR 16-1 ● RF switch ● RF attenuator for frequencies above 10 MHz ● Low distortion factor ● Long-term stability of electrical characteristics Type Marking Ordering Code tape and reel BAR 14-1 L7 Q62702-A772 BAR 15-1
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Q62702-A772
Q62702-A731
Q62702-A773
OT-23
A773
A773* Transistor
Q62702-A773
Q62702-A772
a772
A773 5 pin
sot-23 diode l8
Q62702-A731
sot-23 diode L9
A731
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Diode BA 148
Abstract: BA 811
Text: SKT 250 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Stud Thyristor Line Thyristor /- /- /$- / 11 ?11
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BAR16-1
Abstract: top marking c2 sot23 BAR14-1 MARKING GP SOT23 BAR15-1 marking L8s
Text: BAR14-1.BAR16-1 Silicon PIN Diodes 3 RF switch, RF attenuator for frequencies above 10 MHz Low distortion faktor Long-term stability of electrical characteristics BAR14-1 BAR15-1 BAR16-1 3 3 3 1 2 2 1 2 1 VPS05161 2 EHA07006 EHA07004 EHA07005 1 Type
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BAR14-1.
BAR16-1
BAR15-1
BAR14-1
EHA07006
EHA07004
EHA07005
VPS05161
BAR16-1
top marking c2 sot23
BAR14-1
MARKING GP SOT23
BAR15-1
marking L8s
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j4a diode
Abstract: No abstract text available
Text: SOT23 SILICON VARIABLE CAPACITANCE DIODE ZC829A ISSUE 3 – JANUARY 1998 FEATURES * VHF to UHF operation * Low IR * Enabling Excellent Phase Noise Performance * IR Typically <200pA at 25V APPLICATIONS * Mobile radios and Pagers * Cellular telephones * Voltage controlled Crystal Oscillators
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200pA
ZC829A
ZC829A
ZC830A
ZC831A
ZC832A
ZC833A
ZC834A
ZC835A
j4a diode
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BAR61
Abstract: BAR14-1 l8s 15 BAR15-1 BAR16-1 marking L8s marking L7s diode
Text: BAR14-1 / BAR15-1 / BAR16-1 / BAR61. Silicon PIN Diode RF switch, RF attenuator for frequencies above 10 MHz Low distortion faktor Long-term stability of electrical characteristics BAR14-1 BAR15-1 3 BAR16-1 3 BAR61 4 3 3 D 1 D 1 D 2 D 1 1 2 1 D 2 2
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BAR14-1
BAR15-1
BAR16-1
BAR61.
BAR14-1
BAR15-1
BAR16-1
BAR61
BAR61
l8s 15
marking L8s
marking L7s diode
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aeg vde 0435
Abstract: oki relay aeg thyristors aeg diode Si 61 L 240V AC/48v output rectifiers circuit diagrams
Text: CONTA-ELECTRONICS ELECTRONICS CONTA-ELECTRONICS CONTA-ELECTRONICS Program Overview 3 4 5 6 10 14 16 22 23 25 27 30 32 34 35 38 39 40 44 46 48 50 52 54 56 58 66 67 68 70 76 90 91 92 94 95 96 98 100 102 104 106 110 112 113 Fuse, Component, Diode and Indicator Modules
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CMS-UI60-UI
D-33161HÃ
aeg vde 0435
oki relay
aeg thyristors
aeg diode Si 61 L
240V AC/48v output rectifiers circuit diagrams
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ZV950
Abstract: ZV952V2TA
Text: 950 series SILICON LOW VOLTAGE HYPERABRUPT VARACTOR DIODES ZV950, ZV952, ZV953, ZMDC953 Device Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics, low voltage operation and high Q. Low reverse current ensures very low phase
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ZV950,
ZV952,
ZV953,
ZMDC953
200pA)
Wi222
ZV950
ZV952V2TA
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Untitled
Abstract: No abstract text available
Text: Bulletin 127101 rev.A 09/97 International IQR Rectifier IRK. SERIES THYRISTOR/ DIODE and THYRISTOR/THYRISTOR INT-A-pak Power Modules 135 A 140 A 160 A Features • H ig h v o lta g e ■ E lectrically Isolated base plate ■ 3000 V RMSIsolating voltage
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ULE78996
D03QQb5
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IRKH135-16D25
Abstract: RK135
Text: Bulletin 127101 rev. A 09/97 International lö R Rectifier IRK. SERIES THYRISTOR/DIODE and INT-A-pak Power Modules THYRISTOR/THYRISTOR Features • H igh v o lta g e I E le c tric a lly is o la te d b a s e p la te ■ 3 0 0 0 V R M gis o la tin g v o lta g e
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semipack skkt 31
Abstract: semikron skkt snubber semikron skkt 31 160 semikron 32769900 skkt 31 160 semipack skkh 31 semikron skkd 131 DIN 46330 skkt 90 thyristor T 95 F 700
Text: se MIKRDn Section 1: SEMIPACK Thyristor/Diode Modules Summary of Types Circuit Type • New type SKKD1S SKKD26 • • • • • • • • • • • SKKD46 SKKD 81 SKKD 100 SKKD 162 SKKD 201 SKKD 260 SKKE15 SKKE 81 SKKE 162 SKKE 201 SKKE 260 SKKE 400
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tiristor
Abstract: diodo a7 diodo 105 skkt 19/12d Semikron sk 1 1200/18e semikron SKKT 162/12E
Text: SEHIKRON INC DbE D | fll3bb71 DOOllTE fl 7“- s r - ¿3 SEM IPACK Thyristor/Diode Modules SEM IPACK® Thyristor/Dioden-Module SEM IPACK® Modules a thyristors/diodes isolated metal bases. V^oi = 2500 V— V V A A SK K T 131/08D /12D.E /14E /16D, E 900 1300
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fll3bb71
131/08D
161/08D
tiristor
diodo a7
diodo 105
skkt 19/12d
Semikron sk 1 1200/18e
semikron SKKT 162/12E
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L1385
Abstract: IRK42 IRKH162
Text: 5*ÌE D • IINR MÖSSMSH QOIBETO 70S U M - . 1 3 5 , SCR I SCR and SCR / DIODE , 3 e , , | R, | NEW INT-A-pak Power Modules INTERNATIONAL RECTIFIER Features ■ H igh v o lta g e ■ E le c tric a lly is o la te d b a s e p la te ■ 3 0 0 0 V RMS iso latin g v o lta g e
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10ohri
L1385
IRK42
IRKH162
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IRKH162-14D20
Abstract: IRKH135-16D25
Text: I 4Ô55452 0Glb7S5 157 M I N R SERIES IRK.135, .136, .141, .142, .161, .162 International S Rectifier SCR I SCR and SCR / DIODE Features NEW INT-A-pak Power Modules INTERNATIONAL RECTIFIER • High voltage ■ Electrically isolated base plate ■ 3000 V RMS isolating voltage
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10ohri
36-Thermal
IRKH162-14D20
IRKH135-16D25
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irkv 300
Abstract: k142 IRKH135-16 SCR 40 RIA 120 25 RIA 120 SCR irkt 40 T 705 scr IRKT AN TBT 136 IRKH141-20
Text: 5*îE I INR 4Û554SE □OlBB'îO 705 assae irk’35' i R I SCR / SCR and SCR / DIODE NEW INT-A-pak Power Modules INTERNATIONAL RE CT IF IE R Features • H igh v o lta g e ■ E le c tric a lly is o la te d ba se p late ■ 3000 V RMS is o la tin g v o lta g e
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554S2
10ohms-tr<
irkv 300
k142
IRKH135-16
SCR 40 RIA 120
25 RIA 120 SCR
irkt 40
T 705 scr
IRKT AN
TBT 136
IRKH141-20
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon PIN Diodes BAR 14-1 . BAR 16-1 • RF switch • RF attenuator for frequencies above 10 MHz • Low distortion factor • Long-term stability of electrical characteristics Type Marking Ordering Code tape and reel BAR 14-1 L7 Q62702-A772
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Q62702-A772
OT-23
EHA07005
Q62702-A731
EHAQ7004
Q62702-A773
EHA07M6
fl235b05
0235bQ5
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Untitled
Abstract: No abstract text available
Text: SIEM EN S Silicon PIN Diodes BAR 14-1 . BAR 16-1 • R F switch • R F attenuator for frequencies above 10 M H z • Low distortion factor • Long-term stability of electrical characteristics Type Marking Ordering Code tape and reel B AR 14-1 L7 Q 6 2 70 2 -A 7 7 2
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EHA07005
2702-A
EHA07004
EHA07006
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Untitled
Abstract: No abstract text available
Text: S1E D • Û 1 3 tib71 Q D D 3 4 0 ^ 713 M S E K C SEMIKRDN S E M I K R O N INC Thyr istor Vrsm Vdrm Vrrm V V Diode Vrsm Vrrm V 1500 1400 2000 1700 1600 2500 2300 2200 3000 = 90 °<2 R.M.S. motor current pe phase) IMRMS 320 A (T e a s e | 410 A 360 A SKKH 131/14 E 20 SKKH 161/14 E 20 SKKH 210/14 E 20
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tib71
SKKH131
SKKL131
SKKH161
SKKL161
SKKH210
SKKL210
SKKT131,
SKKT161,
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IR E78996 irkh
Abstract: irkv 300 thyristor diode module IRK E78996 IRK E78996 IRK. Series application base triggering circuit of 3 phase inverters IRKH 180 IRK 160 IRK 92
Text: B ulletin 127101 rev. B 04 /98 International I R Rectifier IRK. SERIES TH YRISTO R/ DIODE and THYRISTO R/THYRISTO R INT-A-pak Power Modules 135 A 140 A 160 A Features • H ig h v o l t a g e ■ E l e c t r i c a l l y i s o la t e d b a s e p l a t e
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E78996
66msf
IR E78996 irkh
irkv 300
thyristor diode module IRK E78996
IRK E78996
IRK. Series application
base triggering circuit of 3 phase inverters
IRKH 180
IRK 160
IRK 92
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ixsn35n100au1
Abstract: No abstract text available
Text: 4bflbEEb GGanL»? D34 IIX Y nixYS IXSN35N100AU1 PRELIMINARY D ATA SHEET IGBT miniBLOC with Diode C 25 <TÎ VC ES T e s t C o n d itio n s VcES T j =25°C to 150°C 600 V v CGR T,J = 25°C to 150°C; RIjc „ = 1 MQ 600 V VOES C ontinuous ±20 V v GEM Transient
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IXSN35N100AU1
OT-227B
1250C,
80A/us
D-68916;
ixsn35n100au1
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ixsn35n100au1
Abstract: No abstract text available
Text: 4feflfc>2Sb OOOITM? D3M • IXY n ix Y S IXSN35N100AU1 PRELIMINARY DATA SHEET IGBT miniBLOC with Diode C 25 VC ES i f V C E sat S ym bol T e s t C o n d itio n s V CES T j =25°C to 150°C 600 V vCGR T , = 25°C to 150°C; R „ = 1 MQ 600 V V GES C ontinuous
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IXSN35N100AU1
-15A/ijs,
80A/us
D-68916;
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SIMPLE 40w inverter circuit
Abstract: No abstract text available
Text: iited M er - , 35, ,se, , J ^ | SCR I SCR and SCR / DIODE NEW INT-A-pak Power Modules Features 135A • ■ ■ ■ ■ ■ ■ ■ ■ 140A 160A High voltage Electrically isolated base plate 3000 V RMS isolating voltage Industrial standard package Sim plified m echanical designs,
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itc136,
SIMPLE 40w inverter circuit
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