Untitled
Abstract: No abstract text available
Text: HY51V 16100B 'H Y U N D A I 1 6 M x 1 -bit CMOS DRAM DESCRIPTION ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 16,777,216 x 1-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed random access of memory cells within the
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HY51V
16100B
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CACP
Abstract: No abstract text available
Text: DRAM M ODULE KM M 372C32 0 8 0 B K Buffered 32Mx72 DIMM (16Mx4 base) Revision 0.0 Sept. 1997 DRAM M ODULE KM M 372C32 0( 8 ) 0 B K Revi si on Hi st or y Version 0.0 (Sept, 1 997) Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.
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372C32
32Mx72
16Mx4
16Mx4,
KMM372C320
32Mx72bits
16Mx4bits
CACP
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str 765 RT
Abstract: No abstract text available
Text: ^ Pptu M5M4V161 OOBJ.TP.RT-e, 7,-tl ! -6S,-7S,-8S FAST PAGE MODE 16777216-BiT 16777216-WORD BY 1-BIT DYNAMIC RAM DESCRIPTION ITiis Is a family of 16777216-word by 1-bit dynamic RAMs, fabricated with the high performance CMOS process,and is ideal or large-capacity memory systems where high speed, low power
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M5M4V161
16777216-BiT
16777216-WORD
str 765 RT
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Untitled
Abstract: No abstract text available
Text: 16100B «HYUNDAI 16Mx 1-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION T h is fa m ily is a 16M b it d y n a m ic R A M org a n iz e d 16 ,777 ,216 x 1-bit c o n fig u ra tio n w ith F a s t P age m o d e C M O S D R A M s. F a s t P a g e m o d e o ffe rs high
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CACP
Abstract: km44c16000
Text: DRAM M ODULE KMM372C160 8 0BK/BS Buffered 16Mx72 DIMM (16Mx4 base) Revision 0.0 Sept. 1997 DRAM M ODULE KM M 372 C1 60(8)0B K/B S Revision History Version 0.0 (Sept, 1 997) Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in AC C H A R A C T E R I S T I C S .
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KMM372C160
16Mx72
16Mx4
KMM372C1
16Mx4,
16Mx72bits
16Mx4bits
400mil
CACP
km44c16000
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HY5116100B
Abstract: 1AD41-00-MAY95 HY5116100
Text: ' • H Y U N D A H Y 5 1 1 6 1 0 0 B S e r ie s 16Mx 1-bit CMOS DRAM I DESCRIPTION The H Y 16100B is the new generation and fast dynam ic R A M organized 16,777,216 x 1-bit. T h e H Y 5 1 1 6 1 0 0 B utilizes H yundai’s C M O S silicon gate process technology a s well a s advanced circuit techniques to provide w ide
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HY5116100B
16Mx1
HY5116100Bis
TheHY5116100B
4b750Ã
300435b
1AD41-00-MAY9S
HY5116100BJ
1AD41-00-MAY95
HY5116100
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Untitled
Abstract: No abstract text available
Text: KMM372V160 8 0BK/BS DRAM MODULE KMM372V160(8)0BK/BS Fast Page Mode 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V FEATURES GENERAL DESCRIPTION • T he S am sung K M M 3 7 2V 1 60 (8 )0B is a 16M x72bits D ynam ic Part Identification Part num ber
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KMM372V160
16Mx4,
x72bits
168-pin
16100B
16000B
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