1664J Search Results

Contextual Info: 65,536 W O R D x 16 BIT D Y N A M IC RAM DESCRIPTIO N The 1664J/Z is th e new generation dynam ic RAM organized 65,536 words by 16 bits. The TC51 1664J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as well as advanced circuit tech n iq u es to provide wide operating m argins, both in te rn a lly and to the system user. M ultiplexed

TC551664J-15

Abstract: cs40
Contextual Info: TOSHIBA 1664J-15/20/25 SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM Description The T C 5 M 6 6 4 J is a 1.048.576 bit high speed C M O S static random acce ss m em ory organized as 6 5 ,5 3 6 w o rd s by 16 bits and operated trorn a single 5V supply. Toshiba's advanced C M O S tech nolog y and circuit design enable high speed operation.

Contextual Info: 1664J-12,-15 TO SH IB A TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The 1664J is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed

TC511664

Contextual Info: I N T E G R A T E D CIRCUIT TO SHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT T 1664J / Z - 8 0 , 1664J / Z -10 TECHNICAL DATA SILICON GATE CMOS 65,536 W O R D X 16 BIT D Y N A M IC R A M * This is advanced information and specifica­ tions are subject to change without notice.

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16

l2a14

Contextual Info: TOSHIBA 1664J/FT - 1 2 , 1664J/FT - 1 5 TECHNICAL DATA ! SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM DESCRIPTION The 1664J/FT is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bit« using CMOS technology, and operated from a single 3.3-volt supply. Toshiba’s CMOS

tc511664jl

Abstract: TC516
Contextual Info: TC51 6 5 ,5 3 6 W ORD X 16 BIT DYNAMIC RAM * This is advanced information and specifica­ tions are subject to change without notice. DESCRIPTION The 1664JL/ZL is the new generation dynamic RAM organized 65,536 words by 16 bits. The 1664JL/ZL utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit

HM62V8512LFP

Abstract: HM53861J M51419 16M dram dram zip 256kx16 m514280 hn27c1024hg 4M DRAM EDO M5241605 HM534253BT
Contextual Info: Memories Dynamic RAMs DRAM Access time ns 60 80 {HM5116100AS/ATS J F.P. 4k refresh -4Mx4 - {HM5116400AS/ATS ] F.P. 4k refresh 1HM51W16400AS/ATS ] F.P. 4k refresh 1HM5117400AS/ATS ] F.P. 2k refresh -3.3V operation- 16M- 70 -16Mx1 -3.3V operation— 2Mx8 -3.3V operation-

ACHI IR 6000

Abstract: 470K variable resistor BPL fqr 21 BPL TV circuit for vertical ic MC68HC05T10 MC68HC705T10 MC68HC05T7 1h31 cnh3 motorola mc6800
Contextual Info: MC68HC05T1OD/H 8-Bit Microcomputers MC68HC05T10 MC68HC05T7 MC68HC705T10 TECHNICAL DATA MOTOROLA HONG KONG MOTOROLA •i S E M I C O N D U C T O R H H M TECHNICAL DATA iH M H i \ External Components Required for PLL in MC68HC05T7/T10 and MC68HC705T10 A/P MCU Technical Marketing, FEB. 21,1992

A302 x6

Abstract: TC5116
Contextual Info: 65,536 W O R D x 16 BIT D Y N A M I C R A M DESCRIPTION T h e T C 5 1 1 6 6 4 J / Z i s t h e n e w g e n e r a t i o n d y n a m i c R A M o r g a n i z e d 6 5 , 5 3 6 w o r d s by 16 bi t s. The T C 5 1 1 6 6 4 J / Z u t i l i z e s T O S H I B A ' S C M O S S i l i c o n g a t e p r o c e s s t e c h n o l o g y a s w el l a s a d v a n c e d c i r c u i t

Contextual Info: 65 ,536 W O R D x 1 6 BIT D Y N A M I C R A M * T h i s is a d v a n c e d i n f o r m a t i o n a n d s p ec if ica ­ t i o n s a r e s u b j e c t to c h a n g e w i t h o u t no tic e. D ESCRIPTION The 1664JL/ZL is the new generation dynamic RAM organized 65,536 words by 16 bits. The