Contextual Info: HYM72V32656T8 32Mx64, 32Mx8 based, PC100 D E S C R IP T IO N The HYM72V32656T8 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 32Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 166pin glass-epoxy printed

hall marking code A04

Abstract: INTELDX4 write-through YSS 928
Contextual Info: INTEL486 PROCESSOR FAMILY • lntelDX4TM P ro c e s s o r — Up to 100-MHz Operation -Speed-M ultiplying Technology — 32-Bit Architecture — 16K-Byte On-Chip Cache — Integrated Floating-Point Unit — 3.3V Core Operation with 5V Tolerant I/O Buffers

Contextual Info: KMM366S104CTL PC66 SDRAM MODULE KMM366S104CTL SDRAM DIMM 1Mx64 SDRAM DIMM based on 1Mx16,4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S104CTL is a 1M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

119A5

Abstract: A1 D036 DU47
Contextual Info: DENSE-PAC M ICROSYSTEM S 64 Megabyte SDRAM DIMM DPSD8MX64RW DESCRIPTION: PIN-OUT DIAGRAM The JE DEC compatible DPSD8MX64RW is a high speed 64 Megabyte CMOS Synchronous DRAM DIMM, consists of eight 4Mx4x4 SDRAM devices. These modules offer substantial advances in DRAM operating performance, including the

Contextual Info: PRELIMINARY DATA SH EET NEC MOS INTEGRATED CIRCUIT MC-4516AC724 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516AC724 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64 M S D R A M : «PD4564821 are assembled.

Contextual Info: PR ELIM IN A R Y DATA SH EET NEC / MOS INTEGRATED CIRCUIT MC-458CB644 8 M-WORO BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The M C -458C B644 is a 8,388,608 words by 64 bits synchronous dynamic R A M module on which 8 pieces of 64 M

I486TM

Contextual Info: in te i1 i486 MICROPROCESSOR • Binary Compatible with Large Software Base -M S -D O S *, OS/2*, Windows — UNIX* System V/386 — IRMX , IRMK™ Kernels High Performance Design — Frequent Instructions Execute in One Clock — 25 MHz and 33 MHz Clock

Contextual Info: HB56A464EJ Series 4,194,304-word x 64-bit High Density Dynamic RAM Module The H B 56A 464E J belongs to 8 byte D IM M D ual — S tandby m ode (T TL : 504 m W (m ax) In -lin e M e m o ry M o d u le ) fa m ily , a n d h a s b e e n B uffered input ex cep t R A S and D Q