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    FET 2SK125

    Abstract: FET 2SK109 2SK109 2SK105 2SK97 2SK104 2sk109a 2SK120 2SK107 2SK124
    Text: - 32 - m. % tt ffl € ÌÉ m & f ;E Y * 1 Ä ^ fë $ P d/Pc h ft K 2S K 8 4 föT LF LN A 2SK85 NEC X-Band LN A/OSC 2 S K 8 7 H HÍZ1 LF LN A 2S K 8 9 B ÎL GaAs/SB m V* (V) *t* (V) * ft (W) (A) N D -5 5 G D O 10 b G 100m N D -1 0 G D O 100m D 500m N D


    OCR Scan     		2SK84 2SK85 2SK87 2SK89 2SK92 2SK93 2SK94 2SK97 2SK103 2SK104 FET 2SK125 FET 2SK109 2SK109 2SK105 2sk109a 2SK120 2SK107 2SK124 PDF

    3SK129

    Abstract: 3SK132 3SK141 3SK137 3SK131 3SK143 3SK136 SDG201 3SK133 3SK128
    Text: - 178 - f §¡J £ it € m & m Ä 1 V* + h K V m* I* & * (V) P d/ P c h (A) ft t t S 4* $ 7> * m Ig s s (max) (A) Vg s (V) 3SK127 UHF RF/M1X MOS N DE 15 DS ±8 0 30m D 150m ±50n ±6 3SK12S UHF LN A MOS N DE 15 DS ±8 30m D 200m ±20n ±8 (Ta=25‘


    OCR Scan     		3SK127 3SK128 3SK129 3SK131 3SK132 13dBmin/15dBtyp 800MHz 3SK143 23dBtyp 50/200MHz 3SK141 3SK137 3SK143 3SK136 SDG201 3SK133 PDF

    3SK205

    Abstract: 3SK241 3SK228 3SK201 3SK220 3SK235 3SK233 3SK203 3SK204 gaas mes
    Text: - 182 - f M £ tí: £ m & m s * K 3SK197 B ÍL 3SK198 m X m Vg s * X 5* V 12 DSX ±10 35m D 150m ±100n ±8 ±6 V* (V) * 3: P d /P c h (A) % S fë i* * (W) Ig s s (max) (A) VHF TV Tuner MOS N DE UHF RF MOS N DE 13.5 DS ±8 30m D 200m ±50 ß Vg s (V)


    OCR Scan     		3SK197 3SK198 3SK199 3SK200 3SK201 5dBmin/20dBtyp 3SK227 17dBmin/19. 900MHz 3SK228 3SK205 3SK241 3SK228 3SK201 3SK220 3SK235 3SK233 3SK203 3SK204 gaas mes PDF

    3SK35

    Abstract: 3SK48 3SK51 3SK40 3SK73 3sk74 3SK41 3SK45 3SK78 3SK59
    Text: - 174 - f € sa s tt £ m & ft £ £ ± S fë P d /P c h K T j. 7 H % ft/ V * fr fr (V) (A) * m Ig s s (max) (A) Vg s (V) (min) (A) & tö tt f t (Ta=25<C ) Vpi VP2 (max) V g 2S (max) V g z s (max) (A) (V) (V) (V) (V) (min) (typ) V d s (S) (S) (V) Vg i s


    OCR Scan     		3SK35 100ll 3SK37 3SK39, 3SK40 3SK61 20dBtyp 200MHz 3KS101 3SK63 3SK35 3SK48 3SK51 3SK73 3sk74 3SK41 3SK45 3SK78 3SK59 PDF

    3SK97

    Abstract: 3SK122 3SK121 3SK125 3SK101 3SK114 3SK87 3SK102 3SK112 3SK113
    Text: - s tí: € ffl iÊ m iS V* II K V Vg s * tt* B ÍL UH F RF MOS N DE 15 DS ±8 B ÍL VHF RF M OS N DE 15 D S ±8 3SK85 B ÍL V H F RF MOS N DE 22 DS ±8 3SK87 NEC U H F RF MOS N DE 20 D S ±10 3SK88 NEC U H F RF MOS N DE 20 D S ±10 A-Sff. C h o p MOS


    OCR Scan     		3SK83 3SK85 3SK87 3SK88 200MHz 3SK114 16dBtyp 800MHz 3SK115 20dBtyp 3SK97 3SK122 3SK121 3SK125 3SK101 3SK114 3SK102 3SK112 3SK113 PDF

    3SK164

    Abstract: 3SK184 3SK174 3SK183 3SK192 3SK159 3SK179 3SK182 199D 3SK171
    Text: - 180 - Jl f m s 4t € ffl & m A $ K a æ 3SK160 m, P d/Pch ]/ 3SK159 fë £ V) * * £ * (V) & m V / U H F RF MOS N DE 1 3.5 DS ±8 30m D V / U H F RF MOS N DE 13. 5 DS ±8 30nt D ÜHF TV Tuner MOS N DE 12 DS ±8 Ig s s (max) (A) (min) (A) Vg s (V) % ft


    OCR Scan     		3SK159 3SK160 3SK162 3SK164 3SK165 16dBtyp, 45dBtyp 800MHz 3SK184 19dBtyp 3SK164 3SK184 3SK174 3SK183 3SK192 3SK179 3SK182 199D 3SK171 PDF

    2sk408

    Abstract: 2SK2794 2sk409 2SK1999 ha22002 2SD669A 2SK2595
    Text: GaAs LINEAR IC • H igh frequency linear 1C Type No. Package code MPAK-4 HA21008 5V Function & Characteristics BS tuner Amp.Vcc » 5 V, lo « 32 mA max Status * NF = 8.5 dB typ, PG « 10.5 dB typ (f = 900 MHz) MPAK-5 HA22012 LNA, VDD = 3 V, Idd = 3 mA typ, NF = 1.9 dB


    OCR Scan     		HA21008 HA22012 HA22022 HA22016 MSP-18 HA21001MS 16dBtyp 1SD1133 2SD1134 2SD1135 2sk408 2SK2794 2sk409 2SK1999 ha22002 2SD669A 2SK2595 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NE650R279A 0.2 W L, S-BAND POWER GaAs MES FET DESCRIPTION The NE650R279A is a 0.2 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 0.2 watt of output power CW with high


    OCR Scan     		NE650R279A NE650R279A NE6500379A 23dBm 16dBtyp. PDF

    MRF151G

    Abstract: BH Rf transistor mrf151g 300 MRF151G hf amplifier
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    OCR Scan     		16dBTyp) MRF151G BH Rf transistor mrf151g 300 MRF151G hf amplifier PDF