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    16N03 Price and Stock

    Micro Commercial Components MCQ16N03-TP

    MOSFET N-CH 30V 8-SOP
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    DigiKey MCQ16N03-TP Reel 4,000 4,000
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    Goford Semiconductor G16N03S

    N30V, 16A,RD<10M@10V,VTH1.0V~2.5
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    DigiKey G16N03S Cut Tape 3,634 1
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    G16N03S Digi-Reel 3,634 1
    • 1 $0.58
    • 10 $0.387
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    JRH Electronics M85049-1716N03A

    CONNECTOR BACKSHELL
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    DigiKey M85049-1716N03A Bulk 92 1
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    JRH Electronics M85049-3716N03L

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    DigiKey M85049-3716N03L Bulk 87 1
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    JRH Electronics M85049-3716N03D

    CONNECTOR BACKSHELL
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    DigiKey M85049-3716N03D Bulk 54 1
    • 1 $837.1
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    16N03 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    16N03L Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    16N03LSM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    16N03LSM9A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    16N03 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    16N03

    Abstract: No abstract text available
    Text: 16N03L, 16N03LSM Data Sheet Title FD1 03L D16 3LS bt A, V, 22 m, gic vel, Cha el wer OSTs utho eyrds terrpoon, gic vel, Cha el wer OSTs, 1AA O2AA April 1999 16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs Features These are N-Channel power MOSFETs manufactured using


    Original     		PDF RFD16N03L, RFD16N03LSM 16N03

    16n03l

    Abstract: 16N03 RFD16N03LSM RFD16N03LSM9A TA49030 AN7254 AN7260 AN9321 AN9322 RFD16N03L
    Text: 16N03L, 16N03LSM S E M I C O N D U C T O R 16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs December 1995 Features Packaging • 16A, 30V JEDEC TO-251AA SOURCE DRAIN GATE • rDS ON = 0.022Ω • Temperature Compensating PSPICE Model


    Original     		PDF RFD16N03L, RFD16N03LSM O-251AA O-252AA RFD16N03L RFD16N03LSM 1e-30 95e-4 92e-3 29e-5) 16n03l 16N03 RFD16N03LSM9A TA49030 AN7254 AN7260 AN9321 AN9322

    16N03

    Abstract: TA49030 16N03L AN7254 AN9321 AN9322 RFD16N03L RFD16N03LSM RFD16N03LSM9A TB334
    Text: 16N03L, 16N03LSM Data Sheet 16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.


    Original     		PDF RFD16N03L, RFD16N03LSM TA49030. 16N03 TA49030 16N03L AN7254 AN9321 AN9322 RFD16N03L RFD16N03LSM RFD16N03LSM9A TB334

    16N03

    Abstract: 16N03L TA49030 AN7254 AN9321 AN9322 RFD16N03L RFD16N03LSM RFD16N03LSM9A TB334
    Text: 16N03L, 16N03LSM Data Sheet 16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.


    Original     		PDF RFD16N03L, RFD16N03LSM 16N03 16N03L TA49030 AN7254 AN9321 AN9322 RFD16N03L RFD16N03LSM RFD16N03LSM9A TB334

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    PG-TDSON-8

    Abstract: 16N03 TDSON-8 16N03LS DIN IEC 68-1 INFINEON transistor marking 16N03L APPLICATION NOTES FOR POWER SMPS BSC016N03LS JESD22
    Text: 16N03LS G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 1.6 mΩ ID 100 A 1) • Qualified according to JEDEC for target applications • N-channel


    Original     		PDF BSC016N03LS 16N03LS PG-TDSON-8 16N03 TDSON-8 16N03LS DIN IEC 68-1 INFINEON transistor marking 16N03L APPLICATION NOTES FOR POWER SMPS JESD22

    F219

    Abstract: vu050 DIXYS
    Text: DIXYS VUG 50 idAV = 58 A v rrm = 800-1800 V Three Phase Rectifier Bridge v RSM V r„ m V V TVPe -O AS 3 b 3 Li L + - o— 800 1200 1400 1600 1800 900 1300 1500 1700 1900 VUO 50-08N03 VUO 50-12N03 VUO 50-14N03 VUO 50-16N03 VUO 50-18N03* . * delivery time on request


    OCR Scan     		PDF 50-08N03 50-12N03 50-14N03 50-16N03 50-18N03* F2-19 F2-20 F219 vu050 DIXYS

    Untitled

    Abstract: No abstract text available
    Text: □IXYS Three Phase Rectifier Bridges V ' rsm V RAM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 VUO 50 IdAV = 58 A VRRM = 800-1 8 0 0 V i- Type Pt 1 VUO 50-08N03 VUO 50-12N03 VUO 50-14N03 VUO 50-16N03 VUO 50-18N03* L-W - * delivery time on request


    OCR Scan     		PDF 50-08N03 50-12N03 50-14N03 50-16N03 50-18N03*

    50-08N

    Abstract: 50-12N03 50-08N03 50-16N 50-18N03 50-18N vuo 50-08N03
    Text: 4bñb22b DODICI OQl « I X Y □IXYS VUO 50 IdAV = 58 A VRRM = 800-1800 V Three Phase Rectifier Bridges V RSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 Type fet F ti "it VUO 50-08N03 VUO 50-12N03 VUO 50-14N03 VUO 50-16N03 VUO 50-18N03* I—► —


    OCR Scan     		PDF 50-08N03 50-12N03 50-14N03 50-16N03 50-18N03* 50-08N 50-16N 50-18N03 50-18N vuo 50-08N03

    Untitled

    Abstract: No abstract text available
    Text: VUO 60 Vpp. = 1200 -1800 v RRM Three Phase Rectifier Bridge v RSM VRRM V V 1300 1500 1700 1900 1200 1400 1600 1800 dAV = 72 A Type '“ l i t VUO 60-12N03 VUO 60-14N03 VUO 60-16N03 VUO 60-18N03* L-ii— ' delivery time on request Symbol Test Conditions 'd A V


    OCR Scan     		PDF 60-12N03 60-14N03 60-16N03 60-18N03* 00G355

    30-16N03

    Abstract: 30-18N03 30-08N03 3037a vuo 30
    Text: n ix Y S VUO 30 IdAV Three Phase Rectifier Bridge v RSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 V RRM -O Type 37 A 800-1800 V + VUO 30-08N03 VUO 30-12N03 VUO 30-14N03 VUO 30-16N03 VUO 30-18N03* * delivery time on request Symbol Test Conditions


    OCR Scan     		PDF 30-08N03 30-12N03 30-14N03 30-16N03 30-18N03* F2-15 F2-16 30-18N03 3037a vuo 30

    60-14N03

    Abstract: VUO60 60-12N03 60-16N03 60-18N03
    Text: DIXYS VUO 60 Three Phase Rectifier Bridge idAv —72 A VRRM = 1200-1800 V + v RSM V RRM V V 1300 1500 1700 1900 1200 1400 1600 1800 Type VUO 60-12N03 VUO 60-14N03 VUO 60-16N03 VUO 60-18N03* * delivery time on request Symbol I IdAVM ® l2t Maximum Ratings


    OCR Scan     		PDF 60-12N03 60-14N03 60-16N03 60-18N03* F2-27 VUO60 60-18N03

    60-12N03

    Abstract: 14N03 60-08N03 16N03 60-14N03 60-16N03 60-18N03 DIXYS 12n03 RSM 037
    Text: □IXYS Three Phase Rectifier Bridge v RSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 VUO 60 VRRM = 800 -1800 V IdAV ?' Type VUO 60-08N03 VUO 60-12N03 VUO 60-14N03 VUO 60-16N03 VUO 60-18N03* J • ' I = 58 A 1 L-ii— L-N—1 * delivery time on request


    OCR Scan     		PDF 60-08N03 60-12N03 60-14N03 60-16N03 60-18N03* 60-12N03 14N03 60-08N03 16N03 60-14N03 60-16N03 60-18N03 DIXYS 12n03 RSM 037

    VUO60

    Abstract: 60-12N03 60-14N03 60-16N03 60-18N03
    Text: nixYS VUO 60 VRRM =1200-1800 V = 72 A I Three Phase Rectifier Bridge V RSM VRRM dAV Type I f ' V V 1300 1500 1700 1900 1200 1400 1600 1800 VUO VUO VUO VUO 60-12N03 60-14N03 60-16N03 60-18N03* 1 11 Î1 III 11 'S -W L+, I . f * delivery tim e on request Symbol


    OCR Scan     		PDF 60-12N03 60-14N03 60-16N03 60-18N03* VUO60 60-18N03

    16N03LS

    Abstract: 16n03l 9312v 03LSM 16N03
    Text: 16N03L, 16N03LSM iU HARRIS U U S E M I C O N D U C T O R 16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs December 1995 Features Packaging • 16A, 30 V • JE D EC T O -251A A r DS ON = 0 . 0 2 2 » • Temperature Compensating PSPICE Model


    OCR Scan     		PDF RFD16N03L, RFD16N03LSM -251A -252A RFD16N03L RFD16N03LSM 61e-13 06e-3 05e-3 57e-6 16N03LS 16n03l 9312v 03LSM 16N03

    Untitled

    Abstract: No abstract text available
    Text: 16N03L, 16N03LSM Semiconductor April 1999 Data Sheet 16A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum


    OCR Scan     		PDF RFD16N03L, RFD16N03LSM 96e-9 1e-30 95e-4 92e-3 29e-5) 03e-3 45e-5)

    14n03

    Abstract: VU0110-16N07 vuo 82-12N07 vu0110 08N03 12N03 VU016- 16N03 190-16N07 16N07
    Text: 3~ Rectifier Bridges, B6U Type ^IhJC PSM ► New A -C 45°C 10 ms A 50 130 4.5 46 0.75 120° sine 100 0.8 40 130 3.1 0.516 (120° sine) 300 0.8 15 130 2.5 0.42 (120° sine) 250 400 440 500 575 800 1400 1600 1800 250 400 440 500 575 800 1200 1400 1600 1800


    OCR Scan     		PDF VU016-08N01 16-12N01 16-14N01 16-16N01 16-18N01 08N01 12N01 14N01 16N01 18N01 14n03 VU0110-16N07 vuo 82-12N07 vu0110 08N03 12N03 VU016- 16N03 190-16N07 16N07

    Untitled

    Abstract: No abstract text available
    Text: 0ATE SYH AUTHORITY DR R E V IS IO N RECORO 16N090 A RELEASED 25JA91 B REVISED MATERIAL SPEC 10JA92 B1 REVISED DIMENSION - 1 PLACE 22MY92 C ADDED .335, .0401.010-2 PLCS, .0551.0102 PLCS, .Q.15R-4 PLCS & .022+.000/-.006 DO NOT S C A LE CK 900005 SC SC 139761 GC GC


    OCR Scan     		PDF 16N090 25JA91 10JA92 22MY92 15R-4 1BN090 0362SO. 16N030 21N090