Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Features The GM71C S 17800B/BL is the new generation dynamic RAM organized 2,097,152 words x 8 bit. GM71C(S)17800B/BL has realized higher density, higher performance and various functions by utilizing advanced CMOS process tech n o lo g y . The
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GM71C
17800B/BL
28pin
400mil
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PDF
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD Description Features The GM 71V S 17800B/BL is the new generation dynamic R A M organized 2,097,152 w ords x 8 bit. G M 71V (S)17800B/BL has realized higher density, higher perform ance and various functions by utilizing a d v a n c e d C M O S p ro c e s s te c h n o lo g y . T he
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17800B/BL
28pin
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PDF
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B56A
Abstract: HB56AW232D-7b
Text: HB56AW232D Series Preliminary 2,097,152-W ord x 32-Bit High Density Dynamic RAM Module H ITA CH I T he H B 56A W 232D is a 2M x 32 dynam ic RA M Sm all O utline Dual In-line M em ory M odule S O .D IM M , m ounted 4pieces o f 16-M bit DRA M (H M 51W 17800B TT)sealed in T S O P package .
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HB56AW232D
32-Bit
17800B
72-pin
HB56A
B56A
HB56AW232D-7b
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1 17800B_ E 2 G 0043 - 17-41 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 17800B is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The 17800B achieves high integration, high-speed operation, and low-power
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17800B_
152-Word
MSM5117800B
28-pin
cycles/32
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PDF
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Untitled
Abstract: No abstract text available
Text: 17800B Series 2,097,152-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-275C Z Rev. 3.0 Jul. 5, 1996 Description The Hitachi HM 51W 17800B is a CM OS dynamic RAM organized 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power. The 17800B offers
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OCR Scan
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HM51W17800B
152-word
ADE-203-275C
28-pin
ns/70
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PDF
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msm5117800b
Abstract: MSM5117800
Text: O K I Semiconductor MSM5 1 17800B_ E 2 G 0 0 4 3 - 1 7 -4 1 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 17800B is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The 17800B achieves high integration, high-speed operation, and low-power
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OCR Scan
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E2G0043-17-41
MSM5117800B_
152-Word
MSM5117800B
28-pin
MSM5117800
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PDF
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Untitled
Abstract: No abstract text available
Text: VG26 V (S)17800B 2,097,152 x 8-Bit CMOS Dynamic RAM Description The device is CMOS Dynamic RAM organized as 2,097,152 words x 8 bits. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only power supply. Low voltage operation is more suitable to be used
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OCR Scan
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17800B
28-pin
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PDF
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saa 1070
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Features The GM71C S 17800B/BL is the new generation dynamic RAM organized 2,097,152 words x 8 bit. GM71C(S)17800B/BL has realized higher density, higher performance and various functions by utilizing advanced CMOS process tech n o lo g y . The
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OCR Scan
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17800B/BL
GM71C
28pin
400mil
saa 1070
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PDF
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1MX16BIT
Abstract: 16MX1
Text: 'H Y U N D A I TABLE OF CONTENTS 1. TABLE OF CONTENTS In d e x . 1 2. PRODUCT QUICK REFERENCE
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256Kx4-bit,
1MX16BIT
16MX1
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PDF
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VG264265B
Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D
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256kxl6
256kxl6,
VG264265B
HM514265D
HY514264B
MT4C16270
uPD4244265LE
KM416C254D
TC5144265D
TC5117405CSJ
hyundai
cross reference guide
TC51V16160
Micron 4MX32 EDO SIMM
dram cross reference
cross reference
tc5117800cft
SAMSUNG Cross Reference
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS 2M X 8-Bit Dynamic RAM HYB 17800BSJ-50/-60/-70 Advanced Inform ation • • • • 2 097 152 w ords by 8-bit organization 0 to 70 "C operating tem perature Fast access and cycle time RAS access time: 50 ns -50 version 60 ns (-60 version) 70 ns (-70 version)
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5117800BSJ-50/-60/-70
fiE35LD5
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PDF
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Q67100-Q2018
Abstract: Q67100-Q2019 Q67100-Q976 Q67100-Q977
Text: SIEM EN S 2M X 32-Bit Dynamic RAM Module HYM 322030S/GS-60/-70 Advanced Inform ation 2 097 152 words by 32-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle tim e -60 version 70 ns access time 130 ns cycle tim e (-70 version)
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32-Bit
322030S/GS-60/-70
L-SIM-72-9
A235b05
0D7173Ã
Q67100-Q2018
Q67100-Q2019
Q67100-Q976
Q67100-Q977
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEM ENS Summary of Types Summary of Types Type Ordering Code Package Description DRAM Pa Memory Components HYB 5 1 1000BJ-50 Q67100-Q1056 P-SOJ-26/20-1 300 mil 1 M X 1, 50 ns 33 HYB 5 1 1000BJ-60 Q67100-Q518 P-SOJ-26/20-1 300 mil 1 M X 1, 60 ns 33 HYB 5 1 1000BJ-70
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1000BJ-50
1000BJ-60
1000BJ-70
1000BJL-50
1000BJL-60
1000BJL-70
514256B-50
514256B-60
514256B-70
514256BJ-50
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PDF
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64mb edo dram simm
Abstract: Dram 168 pin EDO 8Mx8 4Mx4 dram simm 17405CJ
Text: Product Introduction VISWi 1.1.1 4Mb DRAM 1.1.2 16Mb DRAM i Product Introduction 1.1.2 16Mb DRAM continued 2 Product Introduction 1.1.3 64Mb PRAM 64M bit 3.3 -r 8Mx8 Volt L 4M x 16 3 Product Introduction 1.1.4 16Mb SDRAM 1.1.5 64Mb SDRAM 1.1.6 8Mb SGRAM 3.3 Volt
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VQ264260BJ
4265BJ
264265BJ
17400CJ
17405CJ
174TGA
26418165BJGA
26418165BTGA
VE46417805BJGA
64mb edo dram simm
Dram 168 pin EDO 8Mx8
4Mx4 dram simm
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PDF
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0423-J
Abstract: 0117800B
Text: IBM0117800 17800B 2M x 8 D R A M Features • • 2 ,0 9 7 ,1 5 2 word by 8 bit organization • - Active m ax - 1 4 5 m A /1 2 5 m A /1 1 0 m A /9 5 m A - S tan db y (T T L Inputs) - 2 .0 m A (m ax) - S tandby (C M O S Inputs) - 1 .OmA (m ax) S ing le 3 .3 V ± 0 .3 V or 5 .0 V ± 0 .5 V pow er supply
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IBM0117800
IBM0117800B
cycles/32
43G9614
MMDD32DSU-00
0423-J
0117800B
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HY51 17800B.HY51 V16800B 2Mx8, Fast Page mode DESCRIPTION T h is fa m ily is a 16M b it d y n a m ic RAM o rg a n iz e d 2 ,0 9 7 ,1 5 2 x 8 -b it c o n fig u ra tio n w ith F ast P ag e m od e C M O S D R A M s. Fast Page m ode is a kind o f pa ge m ode w h ich is use ful fo r th e read o p e ra tio n . T h e c irc u it and pro ce ss d e sig n a llo w th is
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HY51V17800B
V16800B
A0-A11)
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PDF
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WL15
Abstract: WL3 MARKING WL3 MARKING cODE
Text: SIEM ENS 2M x 8 - Bit Dynamic RAM 2k Refresh Fast Page Mode 17800BJ/BSJ-50/-60 17800BJ(L)/BSJ(L)-50/-60 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance:
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HYB5117800BJ/BSJ-50/-60
HYB3117800BJ
HYB5117800
HYB3117800
117800BJ
P-SOJ-28-4
300mil)
P-SOJ-28-3
400mil)
WL15
WL3 MARKING
WL3 MARKING cODE
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PDF
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Untitled
Abstract: No abstract text available
Text: •'H Y U N D A I 17800B, HY51V16800B 2M x 8-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION This fa m ily is a 16M bit dynam ic RAM organized 2,097,152 x 8-bit configuration w ith Fast Page mode CM O S DRAMs. Fast Page m ode offers high speed random access o f m em ory cells w ithin the sam e row.
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HY51V17800B,
HY51V16800B
HY51V17800BJ
HY51V17800BSLJ
HY51V17800BT
HY51V17800BSLT
HY51V16800BJ
HY51V16800BSLJ
HY51V16800BT
HY51V16800BSLT
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PDF
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Untitled
Abstract: No abstract text available
Text: 17800B Series 2,097,152-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-275C Z Rev. 3.0 Jul. 5, 1996 Description The Hitachi 17800B is a CMOS dynamic RAM organized 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power. The 17800B offers
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OCR Scan
|
HM51W17800B
152-word
ADE-203-275C
28-pin
ns/70
|
PDF
|
Siemens 3SB 180
Abstract: TNC 24 mk 2 Q67100-Q1092 Q67100-Q1093 Q67100-Q1094 siemens FLH 5117800BSJ-50
Text: SIEMENS 2M X 8-Bit Dynamic RAM HYB 17800BSJ-50/-60/-70 Advanced Information • • • • 2 097 152 words by 8-bit organization 0 to 70 "C operating temperature Fast access and cycle time RAS access time: 50 ns -50 version 60 ns (-60 version) 70 ns (-70 version)
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OCR Scan
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5117800BSJ-50/-60/-70
110ns
235b05
Siemens 3SB 180
TNC 24 mk 2
Q67100-Q1092
Q67100-Q1093
Q67100-Q1094
siemens FLH
5117800BSJ-50
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI H Y 5 1 17 8 0 0 B .H Y 5 1 16 8 0 0 B 2Mx8, Fast Page mode DESCRIPTION T h is fa m ily is a 16M b it d y n a m ic RAM o rg a n iz e d 2 ,0 9 7 ,1 5 2 x 8 -b it c o n fig u ra tio n w ith F ast P ag e m od e C M O S D R A M s. Fast Page m ode is a kind o f pa ge m ode w h ich is use ful fo r th e read o p e ra tio n . T h e c irc u it and pro ce ss d e sig n a llo w th is
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HY5117800B
HY5116800B
A0-A11)
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PDF
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hy5118160b
Abstract: No abstract text available
Text: 5V DIMM TYPE SIZE 8 -B y te 8M B As o f '96.3Q DESCRIPTION 1M X 64 PART NO. SPEED REF. ED O .SL H Y M 564104A X /TX 6 0 /7 0 /8 0 4K H Y 5 1 1616 4 B J /B T x 4 H Y M 564124A X /TX H Y M 5 6 4 1 00 N /T N IK H Y 5 1 1816 4 B J /B T x 4 F P M ,L 5 0 /6 0 /7 0
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64104A
64124A
HYM5641OOAX/ATX
564120X
572A124ATX
572A100TN
572A120X
64204A
64214A
64224A
hy5118160b
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PDF
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29F400TA
Abstract: FLC31SVC6S MB90P263 15E03L 81V4405C 29lv800ta MB3799 B566 MB47082 29LV800BA
Text: Index Page Document code Series Series Series Series Series 33 35 36 37 31 - CG51 Series D 5 C B Series D1 F1 Series F2 Series F3 Series 32 112 113 113 113 D S0 4 -2 3 1 1 1 -1 E D S0 4 -2 0 1 0 0 -3 E D S0 4 -2 0 1 0 0 -3 E D S0 4 -2 0 1 0 0 -3 E F4C Series (T1)
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MBM29F002T/B
29F002T/B-X
MBM29LV002T/B
29LV002T/B-X
29LV004B
29LV004T
29LV008B
29LV008T
29F016
29F016A
29F400TA
FLC31SVC6S
MB90P263
15E03L
81V4405C
29lv800ta
MB3799
B566
MB47082
29LV800BA
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PDF
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