Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    17DEC2001 Search Results

    17DEC2001 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    DS1220

    Abstract: M48Z02 M48Z12 24-Pin Plastic DIP
    Text: M48Z02 M48Z12 5 V, 16 Kbit 2 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection


    Original
    M48Z02 M48Z12 M48Z02: M48Z12: PCDIP24 DS1220 M48Z02 M48Z12 24-Pin Plastic DIP PDF

    IMCS 700

    Abstract: PLCC52 PQFP52 PSD813F2 PSD813F3 PSD813F4 PSD813F5 PSD833F2 PSD834F2 PSD853F2
    Text: PSD813F2/3/4/5, PSD833F2 PSD834F2, PSD853F2, PSD854F2 Flash In-System Programmable ISP Peripherals For 8-bit MCUs PRELIMINARY DATA FEATURES SUMMARY • 5 V±10% Single Supply Voltage ■ Up to 2Mbit of Primary Flash Memory (8 uniform sectors, 32K x 8) ■


    Original
    PSD813F2/3/4/5, PSD833F2 PSD834F2, PSD853F2, PSD854F2 256Kbit PQFP52 PLCC52 IMCS 700 PLCC52 PQFP52 PSD813F2 PSD813F3 PSD813F4 PSD813F5 PSD833F2 PSD834F2 PSD853F2 PDF

    M58BW016xB

    Abstract: M58BW016BB M58BW016BT M58BW016DB M58BW016DT PQFP80
    Text: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories PE4FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers


    Original
    M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 512Kb 100ns 56MHz PQFP80 M58BW016B LBGA80 M58BW016xB M58BW016BB M58BW016BT M58BW016DB M58BW016DT PQFP80 PDF

    Untitled

    Abstract: No abstract text available
    Text: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original
    M58BW016DB M58BW016DT 512Kb 56MHz PDF

    CHN 510

    Abstract: CHN 530 vdf displays an1171 PQFP52 PLD 5 AD11 AD12 AD14 ADSP-218X
    Text: DSM2180F3V DSM Digital Signal Processor System Memory for analog devices ADSP-218X family (3.3 V supply) NOT FOR NEW DESIGN FEATURES SUMMARY • Glueless Connection to DSP Figure 1. Packages – Easily add memory, logic, and I/O to DSP 128K Byte Flash Memory


    Original
    DSM2180F3V ADSP-218X PQFP52 CHN 510 CHN 530 vdf displays an1171 PQFP52 PLD 5 AD11 AD12 AD14 PDF

    an1171

    Abstract: adsp 2186 instruction set transistor 13003 AD11 AD12 AD14 ADSP-218X DSM2180F3 PLCC52 PQFP52
    Text: DSM2180F3 DSM Digital Signal Processor System Memory for analog devices ADSP-218X family (5 V supply) NOT FOR NEW DESIGN FEATURES SUMMARY • Glueless Connection to DSP Figure 1. Packages – Easily add memory, logic, and I/O to DSP ■ 128K Byte Flash Memory


    Original
    DSM2180F3 ADSP-218X PQFP52 an1171 adsp 2186 instruction set transistor 13003 AD11 AD12 AD14 DSM2180F3 PLCC52 PQFP52 PDF

    SOH28

    Abstract: M48Z35AV
    Text: M48Z35AV 5.0V or 3.3V, 256Kbit 32Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Battery low flag (BOK) ■ Automatic power-fail chip deselect and WRITE


    Original
    M48Z35AV 256Kbit 32Kbit 28-lead PCDIP28 M48Z35AV: SOH28 M48Z35AV PDF

    Untitled

    Abstract: No abstract text available
    Text: DSM2190F4V DSM Digital Signal Processor System Memory For Analog Devices ADSP-2191 DSPs (3.3V Supply) FEATURES SUMMARY • Glueless Connection to DSP Figure 1. Packages – Easily add memory, logic, and I/O to the External Port of ADSP-2191 DSP ■ Dual Flash Memories


    Original
    DSM2190F4V ADSP-2191 32KByte PDF

    la 7913

    Abstract: JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 00005H
    Text: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original
    M58BW016DB M58BW016DT 512Kb 56MHz la 7913 JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 00005H PDF

    Q002

    Abstract: JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 13-May-2003 tbhk M58BW016DB7 8835h
    Text: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)


    Original
    M58BW016DB M58BW016DT 512Kb 56MHz Q002 JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 13-May-2003 tbhk M58BW016DB7 8835h PDF

    an1171

    Abstract: adsp 2186 instruction set AD14 ADSP-218X DSM2180F3 PLCC52 PQFP52 AD11 AD12
    Text: DSM2180F3 DSM Digital Signal Processor System Memory For Analog Devices ADSP-218X Family (5V Supply) FEATURES SUMMARY • Glueless Connection to DSP Figure 1. Packages – Easily add memory, logic, and I/O to DSP ■ 128K Byte Flash Memory – For Bootloading and/or Data Overlay Memory


    Original
    DSM2180F3 ADSP-218X PQFP52 an1171 adsp 2186 instruction set AD14 DSM2180F3 PLCC52 PQFP52 AD11 AD12 PDF

    STANDARD DIN 6784

    Abstract: No abstract text available
    Text: M48Z35AV 5.0 V or 3.3 V, 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Battery low flag (BOK) ■


    Original
    M48Z35AV M48Z35AV: 28-lead STANDARD DIN 6784 PDF

    M58BW016BB

    Abstract: M58BW016BT M58BW016DB M58BW016DT PQFP80
    Text: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories PE4FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers


    Original
    M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 512Kb 100ns 56MHz PQFP80 M58BW016B LBGA80 M58BW016BB M58BW016BT M58BW016DB M58BW016DT PQFP80 PDF

    DSM2190F4VV

    Abstract: an1171 chn 530 DVD player circuit diagram ADSP2191 ADSP-2191 DSM2190F4 DSM2190F4V PLCC52 PQFP52
    Text: DSM2190F4V DSM Digital Signal Processor System Memory For Analog Devices ADSP-2191 DSPs (3.3V Supply) FEATURES SUMMARY • Glueless Connection to DSP Figure 1. Packages – Easily add memory, logic, and I/O to the External Port of ADSP-2191 DSP ■ Dual Flash Memories


    Original
    DSM2190F4V ADSP-2191 32KByte PQFP52 DSM2190F4VV an1171 chn 530 DVD player circuit diagram ADSP2191 DSM2190F4 DSM2190F4V PLCC52 PQFP52 PDF

    Untitled

    Abstract: No abstract text available
    Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)


    Original
    M58BW016DB M58BW016DT M58BW016FT M58BW016FB 512Kb 56MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: M48Z02 M48Z12 5 V, 16 Kbit 2 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection


    Original
    M48Z02 M48Z12 M48Z02: M48Z12: PCDIP24 PDF

    Untitled

    Abstract: No abstract text available
    Text: DSM2180F3 DSM Digital Signal Processor System Memory for analog devices ADSP-218X family (5 V supply) NOT FOR NEW DESIGN FEATURES SUMMARY • Glueless Connection to DSP Figure 1. Packages – Easily add memory, logic, and I/O to DSP ) s ( t c u d o s) r


    Original
    DSM2180F3 ADSP-218X PQFP52 PDF

    M58BW016

    Abstract: Q002 M58BW016DB M58BW016DT M58BW016FB M58BW016FT PQFP80
    Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Features • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)


    Original
    M58BW016DB M58BW016DT M58BW016FT M58BW016FB 512Kb 56MHz PQFP80 M58BW016 Q002 M58BW016DT M58BW016FB PQFP80 PDF

    Untitled

    Abstract: No abstract text available
    Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kbit x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for fast program (optional)


    Original
    M58BW016DB M58BW016DT M58BW016FT M58BW016FB PQFP80 PDF

    h13f

    Abstract: AN1153
    Text: DSM2180F3V DSM Digital Signal Processor System Memory for analog devices ADSP-218X family (3.3 V supply) NOT FOR NEW DESIGN FEATURES SUMMARY • Glueless Connection to DSP Figure 1. Packages – Easily add memory, logic, and I/O to DSP ) s ( t c u d o s)


    Original
    DSM2180F3V ADSP-218X PQFP52 h13f AN1153 PDF

    an1171

    Abstract: AD14 ADSP-218X DSM2180F3V PLCC52 PQFP52 AD11 AD12 ADSP-2185N
    Text: DSM2180F3V DSM Digital Signal Processor System Memory For Analog Devices ADSP-218X Family (3.3V Supply) FEATURES SUMMARY • Glueless Connection to DSP Figure 1. Packages – Easily add memory, logic, and I/O to DSP ■ 128K Byte Flash Memory – For Bootloading and/or Data Overlay Memory


    Original
    DSM2180F3V ADSP-218X PQFP52 an1171 AD14 DSM2180F3V PLCC52 PQFP52 AD11 AD12 ADSP-2185N PDF

    Untitled

    Abstract: No abstract text available
    Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kb x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for Program, Erase and Read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for Fast Program (optional)


    Original
    M58BW016DB M58BW016DT M58BW016FT M58BW016FB PDF

    SR10

    Abstract: 188224-1 88224 88224c
    Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 1 2 3 RELEASED FOR PUBUCATION-ALL RIGHTS RESERVED. 0 ELECTRONICS CORPORATION. E REVISIONS GW DESCRIPTION- F DÂfË SR10 — 0 1 17 — 03 DWN I APVD 26— 05— 03 DP DP - 1 0 x 2 . 0 = 2 0 .0 - ^ P L A T IN G


    OCR Scan
    -10x2 27yum 27/jm 65mrr 17DEC2001 SR10 188224-1 88224 88224c PDF

    Untitled

    Abstract: No abstract text available
    Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION — i— LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. Dl ST REVISIONS GW LTR DESCRIPTION DATE SRI 0 - 0 5 3 4 - 0 1 □WN APVO DP DP 1 7 -1 2 -0 1 11 D D -25 MAX. S ¿i ¿i


    OCR Scan
    AR2000 17DEC2001 PDF