SZA-2044
Abstract: SZA-2044Z
Text: SZA-2044 Z SZA-2044(Z) 2.0GHz to 2.7GHz 5V 1W Power Amplifier 2.0GHz to 2.7GHz 5V 1W POWER AMPLIFIER Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-2044 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT
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SZA-2044
11b/g
EDS-103612
SZA-2044Z
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SZA2044ZPCK-EVB2
Abstract: SZA-2044 SZA2044 SZA-2044Z transistor 2.4GHz class ab amplifier schematic transistor 2.4GHz amplifier schematic
Text: SZA-2044 Z SZA-2044(Z) 2.0GHz to 2.7GHz 5 V 1W Power Amplifier 2.0GHz to 2.7GHz 5V 1W POWER AMPLIFIER Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-2044 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT
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SZA-2044
11b/g
SZA2044
SZA2044ZPCK-EVB2
DS100266
SZA2044ZPCK-EVB2
SZA-2044Z
transistor 2.4GHz class ab amplifier schematic
transistor 2.4GHz amplifier schematic
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mallory 150 series
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this
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Inte153
MRF20030R
mallory 150 series
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transistor 2.4GHz amplifier schematic wifi
Abstract: land pattern for 0402 cap
Text: SZA-2044 Z SZA-2044(Z) 700MHz to 2.7GHz 5V 1W Power Amplifier 700MHz to 2.7GHz 5V 1W Power Amplifier Package: QFN, 4mm x 4mm Product Description Features RFMD’s SZA-2044 is a high efficiency class AB heterojunction bipolar transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT
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SZA-2044
700MHz
11b/g
DS121211
SZA2044ZSQ
SZA2044ZSR
transistor 2.4GHz amplifier schematic wifi
land pattern for 0402 cap
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transistor 2.4GHz amplifier schematic wifi
Abstract: schematic wifi board
Text: SZA-2044 Z SZA-2044(Z) 2.0GHz to 2.7GHz 5V 1W Power Amplifier 2.0GHz to 2.7GHz 5V 1W POWER AMPLIFIER Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-2044 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT
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Original
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SZA-2044
11b/g
DS110620
SZA2044ZSQ
SZA2044ZSR
SZA2044Z
SZA2044ZPCK-EVB2
transistor 2.4GHz amplifier schematic wifi
schematic wifi board
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Untitled
Abstract: No abstract text available
Text: SZA-2044 Z SZA-2044(Z) 2.0GHz to 2.7GHz 5V 1W Power Amplifier 2.0GHz to 2.7GHz 5V 1W POWER AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-2044 is a high efficiency class AB Heterojunction Bipolar Transistor
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SZA-2044
11b/g
EDS-103612
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NE94433-T1B
Abstract: 2SC3545 2SC4184 NE944 NE94430 NE94430-T2 NE94432 NE94433 0840 057 MICROWAVE TRANSISTOR
Text: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES DESCRIPTION • LOW COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry
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NE944
NE944
NE94430-T2
NE94433-T1B
24-Hour
NE94433-T1B
2SC3545
2SC4184
NE94430
NE94430-T2
NE94432
NE94433
0840 057
MICROWAVE TRANSISTOR
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BD136
Abstract: MJD47 MRF20030R
Text: MOTOROLA Order this document by MRF20030R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this
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MRF20030R/D
MRF20030R
BD136
MJD47
MRF20030R
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Motorola 946
Abstract: MRF2003 BD136 MJD47 MRF20030R RF amplifier mtbf
Text: MOTOROLA Order this document by MRF20030R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this
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MRF20030R/D
MRF20030R
Motorola 946
MRF2003
BD136
MJD47
MRF20030R
RF amplifier mtbf
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BD135
Abstract: BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727
Text: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR • Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics
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MRF20030/D
MRF20030
BD135
BD136
MJD47
MRF20030
RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ
MOTOROLA 727
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RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ
Abstract: MOTOROLA TRANSISTOR 935 BD136 bd136 transistor 10J capacitor RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ transistor NPN 30 watt BD135 MJD47 MRF20030
Text: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this
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MRF20030/D
MRF20030
RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ
MOTOROLA TRANSISTOR 935
BD136
bd136 transistor
10J capacitor
RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ
transistor NPN 30 watt
BD135
MJD47
MRF20030
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2SC3544
Abstract: NE94430 2SC3545 2SC4184 NE944 NE94432 NE94433 S21E
Text: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES DESCRIPTION • LOW COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry
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NE944
NE944
CONDITI17
34-6393/FAX
2SC3544
NE94430
2SC3545
2SC4184
NE94432
NE94433
S21E
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MRF586
Abstract: MRF506 Motorola AR 164 MRF587 MRF587 equivalent
Text: MOTOROL A SC XSTRS/R F *4hE D b3b?254 DDTMTTM 1 •ROTfe » E 3 5 -O S MOTOROLA ■ SEMICONDUCTOR I MRF586 MRF587 TECHNICAL DATA D esign er's D ata Sheet The RF Line NPN SIU C O N HIGH FREQUENCY TRANSISTORS . . . designed for use in high-gain. low-noise ultra-linear, tuned and
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OCR Scan
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MRF586
MRF587
5-10pF
15kHz
MRF506
Motorola AR 164
MRF587
MRF587 equivalent
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bc 206 transistor
Abstract: WJA75 WJA75-3 WJ-a75-3
Text: WJ-A75-3 / SMA75-3 10 to 500 MHz TO-8 CASCAD ABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH GAIN: 20.5 dB TYP. ♦ LOW NOISE: 2.3 dB (TYP.) Outline Drawings Specifications51 A75-3 Typical Characteristics Frequency (Min.) Small Signal Gain (Min.)
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OCR Scan
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WJ-A75-3
SMA75-3
A75-3
50-ohm
000713b
bc 206 transistor
WJA75
WJA75-3
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zt158
Abstract: BD 149 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line M RF20030 RF Pow er Bipolar Transistor Designed for broadband commercial and industrial applications at frequen cies from 1800 to 2000 MHz. The high gain and broadband performance of this
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OCR Scan
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IS22I
MRF20030
zt158
BD 149 transistor
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NEC k 2134 transistor
Abstract: k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. PACKAGE DIMENSIONS Unit: mm
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NE32584C
NE32584C
NE32584C-T1A
NE32584C-SL
NE32584C-T1
NEC k 2134 transistor
k 2134 nec
nec gaas fet marking
NEC D 809 k
NEC 2134 transistor
NE32584
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rohm mtbf
Abstract: kermet case b bd136 equivalent 933 TRANSISTOR SILICON PNP POWER TRANSISTOR b 861
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen cies from 1800 to 2000 MHz. The high gain and broadband performance of this
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OCR Scan
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1S211
1S22I
MRF20030
rohm mtbf
kermet case b
bd136 equivalent
933 TRANSISTOR
SILICON PNP POWER TRANSISTOR b 861
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Untitled
Abstract: No abstract text available
Text: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES DESCRIPTION • LOW COST T he N E 9 44 series o f NPN silicon epitaxial b ipo lar transisto rs is intended fo r use in ge ne ral purpose U H F o scilla to r and m ixer applicatio ns. It is su ita b le fo r au tom otive keyless entry
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OCR Scan
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NE944
NE94430
2SC4184
NE94430-T2
NE94433-T1B
24-Hour
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PDF
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MA4T64400
Abstract: low noise transistors MA4T645 MA4T644
Text: Silicon Low Noise Transistors Silicon Bipolar High fT Low IVoise Microwave Transistors M A4T64400 Series Features MA4T64435 - fT to 11 G H z Micro-X L o w N o ise F igu re at Low B ias V o lta g e H igh A sso cia te d G ain • H e rm e tic and S u rfa c e M o u n t
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OCR Scan
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A4T64400
MA4T64435
MA4T64433
OT-23
MA4T64539
OT-143
4T644X
OT-143)
MA4T64400
low noise transistors
MA4T645
MA4T644
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2SC3544
Abstract: IC sn 74 ls 2000
Text: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES_ DESCRIPTION • LO W COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UH F oscillator and m ixer applications. It is suitable for autom otive keyless entry
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OCR Scan
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NE944
IS12I
IS12S21I
b427525
00L5770
2SC3544
IC sn 74 ls 2000
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Untitled
Abstract: No abstract text available
Text: H E W L E T T - P A C K A R D / CI1PNTS m blE J> • 444 7 5S 4 O O Q ' P f H flS4 ■ H P A AT-01672 Up to 1 GHz General Purpose Silicon Bipolar Transistor HEW LETT PACKARD Features TO-72 Package • 24.0 dBm typical Pi <mat 1.0 GHz • 5.5 dB typical Gi dB at 1.0 GHz
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OCR Scan
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AT-01672
AT-01672
duced70
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PDF
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PN126S
Abstract: ON1503 PN7103
Text: Photo Detectors/Photo Couplers • PIN Photodiodes for AF, CD, VD, Optical ■ Phototransistors Communications and Control A p tr.ti II Appli Package VB Id min. typ. typ. cations Type No. Construciton No. (V) max. (nA) (nm) (ns) PN312C(N) Flat (Clear) 2 division 037 30 20 10 900 10
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OCR Scan
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PN312C
PN312E
PN3104
PN3106
PN3206
PN312D
PN322D
PN3105
PN3112
PN3108
PN126S
ON1503
PN7103
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EZ 707
Abstract: 2SC3544 EZ 0710 EZ 728
Text: -NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES_ DESCRIPTION . LOW COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry
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OCR Scan
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NE944
EZ 707
2SC3544
EZ 0710
EZ 728
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PDF
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BSW68
Abstract: 2N3055 mj2955 50004 2N3440 ST bdy90 BSV64 BSW68A
Text: MilitaryAerospace Division Military-Aerospace Division C EC C 5 0 0 0 0 qualified m etal case transistors A p p ro val no M /0 1 0 3 /C E C C /U K available on r e q u e s t w ith options for additional screening to e ith e r se q u e n c e A, B, C or D.
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OCR Scan
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T0220SM
0220M
BSS44
BSV64
BSW66A
BSW67A
BSW68
BSW68A
BSX62
BSX63
2N3055
mj2955
50004
2N3440 ST
bdy90
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