Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    1812SMS82NJ Search Results

    1812SMS82NJ Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    1812SMS-82NJLC Coilcraft Inc General Purpose Inductor, 0.082uH, 5%, 1 Element, Air-Core, SMD, 1925, ROHS COMPLIANT Visit Coilcraft Inc
    1812SMS-82NJLB Coilcraft Inc General Purpose Inductor, 0.082uH, 5%, 1 Element, Air-Core, SMD, 1925, ROHS COMPLIANT Visit Coilcraft Inc
    1812SMS-82NJL Coilcraft Inc RF inductor, air core, 5% tol, SMT, RoHS Visit Coilcraft Inc
    SF Impression Pixel

    1812SMS82NJ Price and Stock

    Coilcraft Inc 1812SMS-82NJLC

    RF Inductors - SMD 1812 82nH Unshld 5% 2.5A 9.4mOhms AECQ2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1812SMS-82NJLC 3,142
    • 1 $2.24
    • 10 $2.24
    • 100 $2.24
    • 1000 $1.03
    • 10000 $1.03
    		Buy Now
    Bristol Electronics 1812SMS-82NJLC 16
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Quest Components 1812SMS-82NJLC 12
    • 1 $3.3
    • 10 $2.42
    • 100 $2.42
    • 1000 $2.42
    • 10000 $2.42
    		Buy Now
    Coilcraft Direct 1812SMS-82NJLC 5,711 1
    • 1 $0.96
    • 10 $0.96
    • 100 $0.96
    • 1000 $0.6
    • 10000 $0.26
    		Buy Now
    Velocity Electronics 1812SMS-82NJLC 450
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Component Electronics, Inc 1812SMS-82NJLC 2,523
    • 1 $1.15
    • 10 $1.15
    • 100 $0.87
    • 1000 $0.75
    • 10000 $0.75
    		Buy Now

    Coilcraft Inc 1812SMS-82NJ

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 1812SMS-82NJ 1,186
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Quest Components 1812SMS-82NJ 329
    • 1 $2.6784
    • 10 $2.6784
    • 100 $2.6784
    • 1000 $1.2388
    • 10000 $1.2388
    		Buy Now
    1812SMS-82NJ 86
    • 1 $0.54
    • 10 $0.45
    • 100 $0.36
    • 1000 $0.36
    • 10000 $0.36
    		Buy Now

    Coilcraft Inc 1812SMS-82NJSC

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 1812SMS-82NJSC 329
    • 1 $2.6784
    • 10 $2.6784
    • 100 $2.6784
    • 1000 $1.2388
    • 10000 $1.2388
    		Buy Now

    Coilcraft Inc 1812SMS-82NJL

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 1812SMS-82NJL 28
    • 1 $0.63
    • 10 $0.504
    • 100 $0.504
    • 1000 $0.504
    • 10000 $0.504
    		Buy Now

    Others 1812SMS-82NJLB

    GENERAL PURPOSE INDUCTOR, 0.082UH, 5%, 1 ELEMENT, AIR-CORE, SMD, 2520
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 1812SMS-82NJLB 7
    • 1 $0.9565
    • 10 $0.7652
    • 100 $0.7652
    • 1000 $0.7652
    • 10000 $0.7652
    		Buy Now

    1812SMS82NJ Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1812SMS-82NJLB Coilcraft RF inductor, air core, 5% tol, SMT, RoHS Original PDF
    1812SMS-82NJLC Coilcraft RF inductor, air core, 5% tol, SMT, RoHS Original PDF

    1812SMS82NJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G2225X7R225KT3AB

    Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		PDF MRF6VP2600H MRF6VP2600HR6 G2225X7R225KT3AB MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6

    AN3107

    Abstract: 1812SMS-82NJLB AN1351 AN2208 AN2684 JESD22 JESD22-A114 VNI4140K
    Text: AN3107 Application note ESD immunity-level optimization of a high-side switch application based on the VNI4140K Introduction The VNI4140K is a quad-channel high-side driver designed for industrial applications. It is a monolithic device manufactured using STMicroelectronics’ most advanced VIPower


    Original     		PDF AN3107 VNI4140K VNI4140K JESD22) JESD22-A114 AN3107 1812SMS-82NJLB AN1351 AN2208 AN2684 JESD22

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY RFHA1027 RFHA1027 500W GaN Wide-Band Pulsed Power Amplifier The RFHA1027 is a 50V 500W high power discrete amplifier designed for L-Band pulsed radar, air traffic control and surveillance and general purpose broadband amplifiers applications. Using an advanced high power density Gallium


    Original     		PDF RFHA1027 RFHA1027 DS131216

    1812SMS-82NJLB

    Abstract: 14174 cmos AN3107 VNI4140K VNI4140KTR 14174
    Text: VNI4140K Quad high-side smart power solid-state relay Features Type Vdemag 1 RDSon(1) VNI4140K VCC-41 V 0.08 Ω Iout(1) VCC 0.7 A 41 V 1. Per channel Description • Output current: 0.7 A per channel ■ Shorted load protections ■ Junction overtemperature protection


    Original     		PDF VNI4140K VNI4140K VCC-41 PowerSSO-24 1812SMS-82NJLB 14174 cmos AN3107 VNI4140KTR 14174

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		PDF MRFE6VS25L MRFE6VS25LR5

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY RFHA1027 RFHA1027 500W GaN Wide-Band Pulsed Power Amplifier The RFHA1027 is a 50V 500W high power discrete amplifier designed for L-Band pulsed radar, air traffic control and surveillance and general purpose broadband amplifiers applications. Using an advanced high power density Gallium


    Original     		PDF RFHA1027 RFHA1027 DS131220

    RF1000LF

    Abstract: RF600LF-16 2743019447 fair-rite 47nj capacitor transformer mttf RF600LF ATC100B241JT200XT RF1000LF-9 electrolytic capacitor series WB RF transformer turn ratio
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 4, 4/2010 RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in


    Original     		PDF MRF6V2150N MRF6V2150NR1 MRF6V2150NBR1 MRF6V2150NR1 RF1000LF RF600LF-16 2743019447 fair-rite 47nj capacitor transformer mttf RF600LF ATC100B241JT200XT RF1000LF-9 electrolytic capacitor series WB RF transformer turn ratio

    D260-4118-0000

    Abstract: MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac MRFE6VS25NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 1, 12/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		PDF MRFE6VS25N MRFE6VS25NR1 MRFE6VS25GNR1 MRFE6VS25N D260-4118-0000 MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac

    SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR

    Abstract: SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER wifi booster schematic simple fm transmitter mini project report for engineering students Wifi Booster Circuit Diagram wifi signal booster schematic smd-transistor DATA BOOK 2.4 ghz FM wifi RECEIVER CIRCUIT DIAGRAM fm transistor radio mini project 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
    Text: APRIL2008 ALSO PUBLISHED ONLINE: www.highfrequencyelectronics.com NEW SYNTHESIZED SIGNAL GENERATOR OFFERS LOW COST, HIGH VALUE INSIDE THIS ISSUE: Transmission Lines on Ion-Implanted Silicon Wafers Spatial Combining of Microwave Noise Radiators Tutorial—Performance Capabilities of Antenna Arrays


    Original     		PDF APRIL2008 CD-1242-183-10S CD-1242-183-20S CD-1242-183-30S CD-402-802-10S CD-402-802-20S CD-402-802-30S CD-102-103-10S CD-102-103-20S CD-102-103-30S SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER wifi booster schematic simple fm transmitter mini project report for engineering students Wifi Booster Circuit Diagram wifi signal booster schematic smd-transistor DATA BOOK 2.4 ghz FM wifi RECEIVER CIRCUIT DIAGRAM fm transistor radio mini project 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

    TUI-lf-9

    Abstract: ATC700B392JT50X
    Text: Document Number: MMRF1016H Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1016HR5 This 600 W RF power LDMOS transistor is designed primarily for wideband RF power amplifiers with frequencies up to 500 MHz. This device is unmatched


    Original     		PDF MMRF1016H MMRF1016HR5 7/2014Semiconductor, TUI-lf-9 ATC700B392JT50X

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1304L Rev. 0, 12/2013 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MMRF1304LR5 RF power transistor suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as


    Original     		PDF MMRF1304L MMRF1304LR5

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5.1, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		PDF MRF6VP2600H MRF6VP2600HR6

    ATC100B102JT50XT

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in


    Original     		PDF MRF6V2300N MRF6V2300NR1 MRF6V2300NBR1 MRF6V2300NR1 ATC100B102JT50XT

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP11KH Rev. 7, 4/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6VP11KHR6 Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical


    Original     		PDF MRF6VP11KH MRF6VP11KHR6

    MRF6VP21KHR6

    Abstract: T491X226K035AT AN1955 tuo-4 TRANSISTOR J406 A03TKlc
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP21KH Rev. 4, 4/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6VP21KHR6 Designed primarily for pulsed wideband applications with frequencies up to 235 MHz. Device is unmatched and is suitable for use in industrial, medical


    Original     		PDF MRF6VP21KH MRF6VP21KHR6 MRF6VP21KHR6 T491X226K035AT AN1955 tuo-4 TRANSISTOR J406 A03TKlc

    MRF6VP2600KH

    Abstract: TUI-lf-9 MRF6VP2600H ATC700B392JT50X ATC100B221 transistor j380 88-108 88-108 rf amplifier UT-141C-25 5093nw
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5.1, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		PDF MRF6VP2600H 20ficers, MRF6VP2600HR6 MRF6VP2600KH TUI-lf-9 MRF6VP2600H ATC700B392JT50X ATC100B221 transistor j380 88-108 88-108 rf amplifier UT-141C-25 5093nw

    1812SMS-82NJLB

    Abstract: AN3107 VNI4140K VNI4140KTR
    Text: VNI4140K Quad high-side smart power solid-state relay Features Type Vdemag 1 RDSon(1) VNI4140K VCC-41 V 0.08 Ω Iout(1) VCC 0.7 A 41 V 1. Per channel Description • Output current: 0.7 A per channel ■ Shorted load protections ■ Junction overtemperature protection


    Original     		PDF VNI4140K VNI4140K VCC-41 1812SMS-82NJLB AN3107 VNI4140KTR

    MCCFR0W4J0102A50

    Abstract: MRF6VP11KH mccfr0w4j CPF32 MRF6VP11KHR6 MRF6VP11KGSR5
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP11KH Rev. 8, 9/2012 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for pulse wideband applications with frequencies up to 150 MHz. Devices are unmatched and are suitable for use in industrial,


    Original     		PDF MRF6VP11KH MRF6VP11KHR6 MRF6VP11KGSR5 MCCFR0W4J0102A50 mccfr0w4j CPF32 MRF6VP11KGSR5

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1304N Rev. 0, 12/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as


    Original     		PDF MMRF1304N MMRF1304NR1 MMRF1304GNR1 MMRF1304NR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 4, 4/2010 RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in


    Original     		PDF MRF6V2150N MRF6V2150NR1 MRF6V2150NBR1 MRF6V2150NR1

    250GX-0300-55-22

    Abstract: CPF320R000FKE14 MRF6VP11KH 1812SMS-82NJLC ATC200B103KT50X ATC100B101JT500XT AN1955 JESD22-A114 MRF6VP11KHR6 T491X226K035AT
    Text: Document Number: MRF6VP11KH Rev. 6, 12/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6VP11KHR6 Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical


    Original     		PDF MRF6VP11KH MRF6VP11KHR6 250GX-0300-55-22 CPF320R000FKE14 MRF6VP11KH 1812SMS-82NJLC ATC200B103KT50X ATC100B101JT500XT AN1955 JESD22-A114 MRF6VP11KHR6 T491X226K035AT

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1304N Rev. 0, 12/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as


    Original     		PDF MMRF1304N MMRF1304NR1 MMRF1304GNR1 MMRF1304NR1

    ATC100B471JT200XT

    Abstract: EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY MRFE6VS25N C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		PDF MRFE6VS25N MRFE6VS25NR1 MRFE6VS25N ATC100B471JT200XT EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1

    1812SMS-68NJ

    Abstract: No abstract text available
    Text: £2jj ''MidiSpring” SurfaceMountInductors This family of surface mount “midi spring” inductors is designed for higher current applications up to 3.5 Amps than our smaller series. It also provides higher Q factors at lower frequencies. Like all Coilcraft “spring” inductors, these parts


    OCR Scan     		PDF