AN826
Abstract: L4981A power factor 250W
Text: L4981A 250W High Power Factor Supply for TV - AN826 Appl. Note 183mm 149mm Serigraphy L4981A 250W High Power Factor Supply for TV - AN826 Appl. Note Comp. Layer
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L4981A
AN826
183mm
149mm
L4981A
power factor
250W
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MPSA65
Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor
Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*
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MMBTA65
PZTA65
OT-23
OT-223
MPSA64
OT-223
MPSA65
CBVK741B019
F63TNR
MMBTA65
PN2222N
PZTA65
bel 188 transistor
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Si4450DY
Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
Text: Si4450DY 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4450DY
CBVK741B019
F011
F63TNR
F852
FDS9953A
L86Z
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SI9955DY
Abstract: fairchild NDS 1182
Text: Si9955DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si9955DY
fairchild NDS
1182
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transistor 2N5461
Abstract: No abstract text available
Text: MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G D G S TO-92 SOT-23 S Mark: 6E / 61U D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.
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2N5460
2N5461
2N5462
MMBF5460
MMBF5461
2N5462
transistor 2N5461
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Untitled
Abstract: No abstract text available
Text: FDN339AN N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for
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FDN339AN
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fdn5618p
Abstract: No abstract text available
Text: FDN5618P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –1.25 A, –60 V. RDS ON = 0.170 Ω @ VGS = –10 V
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FDN5618P
fdn5618p
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FDS9953A
Abstract: 9953A CBVK741B019 F011 F63TNR F852 L86Z
Text: FDS9953A Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive
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FDS9953A
FDS9953A
9953A
CBVK741B019
F011
F63TNR
F852
L86Z
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FDC6331L
Abstract: SSOT-6 ZENER SINGLE COLOR CODE FDC633N 125OC AN1030 CBVK741B019 F63TNR
Text: FDC6331L Integrated Load Switch Features General Description • –2.8 A, –8 V. RDS ON = 55 mΩ @ V GS = –4.5 V RDS(ON) = 70 mΩ @ V GS = –2.5 V RDS(ON) = 100 mΩ @ V GS = –1.8 V This device is particularly suited for compact power management in portable electronic equipment where
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FDC6331L
FDC6331L
SSOT-6
ZENER SINGLE COLOR CODE
FDC633N
125OC
AN1030
CBVK741B019
F63TNR
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F63TNR
Abstract: FDFS2P102A soic-8 33a
Text: FDFS2P102A Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P102A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.
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FDFS2P102A
F63TNR
FDFS2P102A
soic-8 33a
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FDN302P
Abstract: marking code 10 sot23 rca MIL ID SSOT-3
Text: FDN302P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage
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FDN302P
FDN302P
marking code 10 sot23
rca MIL ID
SSOT-3
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diode sod123 W1
Abstract: CBVK741B019 F63TNR MMSZ5221B sod123 E2
Text: SOD-123 Tape and Reel Data SOD123 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOD123 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated
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OD-123
OD123
177cm
330cm
diode sod123 W1
CBVK741B019
F63TNR
MMSZ5221B
sod123 E2
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2N5306
Abstract: F63TNR MPSA14 PN2222N CBVK741B019
Text: 2N5306 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N5306
MPSA14
2N5306
F63TNR
PN2222N
CBVK741B019
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rf transistor mark code H1
Abstract: CBVK741B019 F63TNR MMBTH24 MPSH11 MPSH24 PN2222N
Text: MPSH24 / MMBTH24 MPSH24 MMBTH24 C E C B TO-92 B SOT-23 E Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 20 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for
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MPSH24
MMBTH24
MPSH24
OT-23
MPSH11
rf transistor mark code H1
CBVK741B019
F63TNR
MMBTH24
MPSH11
PN2222N
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FDS6688
Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z rca tube 56
Text: FDS6688 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDS6688
FDS6688
CBVK741B019
F011
F63TNR
F852
FDS9953A
L86Z
rca tube 56
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FDS9945
Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z 86 diode
Text: FDS9945 60V N-Channel PowerTrench MOSFET General Description Features • 3.5 A, 60 V. These N Channel Logic Level MOSFET have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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FDS9945
FDS9945
CBVK741B019
F011
F63TNR
F852
FDS9953A
L86Z
86 diode
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CBVK741B019
Abstract: F011 F63TNR F852 FDS3812 FDS9953A L86Z
Text: FDS3812 80V N-Channel Dual PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. 3.4 A, 80 V.
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FDS3812
CBVK741B019
F011
F63TNR
F852
FDS3812
FDS9953A
L86Z
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CBVK741B019
Abstract: F011 F63TNR F852 FDS6692 FDS9953A L86Z
Text: FDS6692 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDS6692
CBVK741B019
F011
F63TNR
F852
FDS6692
FDS9953A
L86Z
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FPN630
Abstract: FPN630A PN2222N CBVK741B019 F63TNR TO-226-AE D26Z weig S0480 226AE
Text: FPN630 / FPN630A FPN630 FPN630A C TO-226 B E PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process PC. Absolute Maximum Ratings* Symbol
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FPN630
FPN630A
FPN630
O-226
FPN630A
PN2222N
CBVK741B019
F63TNR
TO-226-AE
D26Z
weig
S0480
226AE
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F852 transistor
Abstract: F852 CBVK741B019 F63TNR PN2222A
Text: SOT-223 Tape and Reel Data SOT-223 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOT-223 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated
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OT-223
330cm
177cm
F852 transistor
F852
CBVK741B019
F63TNR
PN2222A
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NDS spec
Abstract: 9959 CBVK741B019 F011 F63TNR F852 FDS9953A L86Z fairchild soic marking fairchild NDS
Text: SOIC-8 Tape and Reel Data SOIC 8lds Packaging Configuration: Figure 1.0 ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES N NT IO NS AT TERVE PR ECAUTIO OBSE Packaging Description: SOIC-8 parts are shipped in tape. The carrier tape is
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330cm
177il
NDS spec
9959
CBVK741B019
F011
F63TNR
F852
FDS9953A
L86Z
fairchild soic marking
fairchild NDS
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Untitled
Abstract: No abstract text available
Text: BAS35 BAS35 Connection Diagrams 3 3 3 1405 29 2 SOT-23 1 1 2 2 1 General Purpose High Voltage Diode Sourced from Process 1H. See MMBD1401 for characteristics. Absolute Maximum Ratings* Symbol W IV TA = 25°C unless otherwise noted Parameter Working Inverse Voltage
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BAS35
OT-23
MMBD1401
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BF4183-20B
Abstract: No abstract text available
Text: JKL PART NUMBER LENGTH A +/- 2mm COLOR 5600° KELVIN STARTING CIRCUIT VOLTAGE VS Vrms OPERATING LAMP VOLTAGE VL (Vrms) BF4183-20B 183mm RGB HIGH OUTPUT WHITE 900 @ 0°C 380 OPERATING BRIGHTNESS LAMP CURRENT (CANDELA/m2) IL (mArms) 5± 1 ‘ RATED LIFE (HRS)
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BF4183-20B
183mm
BF4183-20B
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BF4183-20B
Abstract: BF4220-20B BF4418-20B
Text: -17±2h -17±2[2] 5.0 MAX.- [2] 00.5- [2] 4.1±0.2— 1 JKL PART NUMBER LENGTH BF4183-20B 183mm BF4220-20B 220mm BF4418-20B 418mm A +/- 2mm COLOR REF. 4.5 MAX.- STARTING OPERATING OPERATING *RATED BRIGHTNESS CIRCUIT VOLTAGE LAMP VOLTAGE LAMP CURRENT (CANDELA/m2) LIFE (HRS)
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BF4183-20B
183mm
BF4220-20B
220mm
BF4418-20B
418mm
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