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    18DEC2006 Search Results

    18DEC2006 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Numonyx AN1995

    Abstract: M25P40 AN1995
    Text: M25P40 4 Mbit, low voltage, serial Flash memory with 75 MHz SPI bus interface Features „ 4 Mbit of Flash memory „ 2.3 V to 3.6 V single supply voltage „ SPI bus compatible serial interface „ 75 MHz clock rate maximum „ Page Program (up to 256 bytes) in 0.8 ms


    Original     		PDF M25P40 2013h) Numonyx AN1995 M25P40 AN1995

    Untitled

    Abstract: No abstract text available
    Text: ST4460FX High voltage fast-switching NPN Power transistor General features • High voltage and high current capability ■ Low spread of dynamic parameters ■ Low base-drive requirements ■ Very high switching speed ■ High ruggedness ■ Fully insulated power package U.L. compliant


    Original     		PDF ST4460FX ISOWATT218FX

    VFQFPN52

    Abstract: STA529 STA529B STA529Q TFBGA48
    Text: STA529 2 x 100 mW class-D amplifier with analog or digital input 2.0 multichannel digital audio processor with FFX Data Brief Features • Up to 96 dB dynamic range ■ Sample rates from 8 kHz to 192 kHz ■ FFXTM class-D driver ■ 1.5 V to 1.95 V digital power supply


    Original     		PDF STA529 18-bit VFQFPN52 STA529 STA529B STA529Q TFBGA48

    Untitled

    Abstract: No abstract text available
    Text: STRH100N6FSY3 N-channel 60V - 0.011Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH100N6FSY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight


    Original     		PDF STRH100N6FSY3 O-254AA 100kRad 34Mev/cm

    Untitled

    Abstract: No abstract text available
    Text: STGP30NC60W STGW30NC60W N-channel 30A - 600V - TO-247 - TO-220 Ultra fast switching PowerMESH IGBT Features Type VCES VCE sat Max @25°C IC @100°C STGW30NC60W STGP30NC60W 600V 600V < 2.5V < 2.5V 30A 30A 3 • High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction


    Original     		PDF STGP30NC60W STGW30NC60W O-247 O-220 O-247

    JESD97

    Abstract: STRH60N20FSY3 25C312
    Text: STRH60N20FSY1 STRH60N20FSY3 N-channel 200V - 0.044Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH60N20FSY1 200V STRH60N20FSY3 200V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge


    Original     		PDF STRH60N20FSY1 STRH60N20FSY3 O-254AA 100kRad 34Mev/cm JESD97 STRH60N20FSY3 25C312

    STRH40N6SY1

    Abstract: JESD97 STRH40N6SY3
    Text: STRH40N6SY1 STRH40N6SY3 N-channel 60V - 0.032Ω - SMD-0.5 rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40N6SY1 60 V STRH40N6SY3 60 V 2 1 • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge


    Original     		PDF STRH40N6SY1 STRH40N6SY3 100kRad 34Mev/cm STRH40N6SY1 JESD97 STRH40N6SY3

    JESD97

    Abstract: RH40N25FSY1 RH40N25FSY3 STRH40N25FSY1 STRH40N25FSY3
    Text: STRH40N25FSY1 STRH40N25FSY3 N-channel 250V - 0.084Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40N25FSY1 250 V STRH40N25FSY3 250 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardened ■ Low total gate charge


    Original     		PDF STRH40N25FSY1 STRH40N25FSY3 O-254AA 34Mev/cm JESD97 RH40N25FSY1 RH40N25FSY3 STRH40N25FSY1 STRH40N25FSY3

    Untitled

    Abstract: No abstract text available
    Text: STRH10N25ESY3 N-channel 250V - 0.95Ω - TO-257AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH10N25ESY3 250V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge


    Original     		PDF STRH10N25ESY3 O-257AA 100kRad 34Mev/cm O-257AA

    Untitled

    Abstract: No abstract text available
    Text: M25P40 4 Mbit, low voltage, Serial Flash memory with 50 MHz SPI bus interface Features • 4 Mbit of Flash memory ■ Page Program up to 256 Bytes in 1.5 ms (typical) ■ Sector Erase (512 Kbit) in 1 s (typical) ■ Bulk Erase (4 Mbit) in 4.5 s (typical)


    Original     		PDF M25P40 2013h)

    w20nm60

    Abstract: w20nm60 equivalent p20nm60 p20nm60fp w20nm P20NM60FP equivalent STB20NM60-1 B20NM60-1 STP20NM60 Contents STW20NM60
    Text: STB20NM60/-1 - STP20NM60FP STP20NM60 - STW20NM60 N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET General features Type VDSS RDS on ID 600V 600V 600V 600V 600V < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω 20A 20A


    Original     		PDF STB20NM60/-1 STP20NM60FP STP20NM60 STW20NM60 O-247 O-220/FP STP20NM60 STB20NM60 STB20NM60-1 w20nm60 w20nm60 equivalent p20nm60 p20nm60fp w20nm P20NM60FP equivalent STB20NM60-1 B20NM60-1 STP20NM60 Contents STW20NM60

    Untitled

    Abstract: No abstract text available
    Text: bq4832Y RTC Module With 32Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail circuit, and battery The bq4832Y RTC Module is a nonvolatile 262,144-bit SRAM organized as 32,768 words by 8 bits with


    Original     		PDF bq4832Y 32Kx8 10-year 144-bit

    Untitled

    Abstract: No abstract text available
    Text: bq20z90-V110 www.ti.com SLUS743 – NOVEMBER 2006 SBS 1.1-COMPLIANT GAS GAUGE ENABLED WITH IMPEDANCE TRACK TECHNOLOGY FOR USE WITH THE bq29330 FEATURES • • • • • • • • • • • • • • Patented Impedance Track™ Technology Accurately Measures Available Charge in


    Original     		PDF bq20z90-V110 SLUS743 bq29330

    H9D5

    Abstract: No abstract text available
    Text: TMP275 SBOS363B − JUNE 2006 − REVISED DECEMBER 2006 0.5°C Digital Out Temperature Sensor FEATURES D D D D D DESCRIPTION 8 ADDRESSES DIGITAL OUTPUT: Two-Wire Serial Interface RESOLUTION: 9- to 12-Bits, User-Selectable ACCURACY: ±0.5°C max from +10°C to +85°C


    Original     		PDF TMP275 SBOS363B 12-Bits, TMP275 H9D5

    WDS6

    Abstract: bd96 BM4B
    Text: bq4852Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail control circuit, and battery The bq4852Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with


    Original     		PDF bq4852Y 512Kx8 10-year 304-bit WDS6 bd96 BM4B

    AN1995

    Abstract: M25P40
    Text: M25P40 4 Mbit, low voltage, serial Flash memory with 50 MHz SPI bus interface Features • 4 Mbit of Flash memory ■ 2.3 V to 3.6 V single supply voltage ■ SPI bus compatible serial interface ■ 50 MHz clock rate maximum ■ Page Program (up to 256 bytes) in 1.5 ms


    Original     		PDF M25P40 2013h) AN1995 M25P40

    STB13NM50N-1

    Abstract: STF13NM50N STB13NM50N STP13NM50N STW13NM50N F13NM50N
    Text: STB13NM50N/-1 - STF13NM50N STP13NM50N - STW13NM50N N-channel 500V - 0.250Ω - 12A - TO-220/FP - TO-247-I2/D2PAK Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID STB13NM50N 550V <0.32Ω 12A STB13NM50N-1 550V <0.32Ω 12A STF13NM50N


    Original     		PDF STB13NM50N/-1 STF13NM50N STP13NM50N STW13NM50N O-220/FP O-247-I2/D2PAK STB13NM50N STB13NM50N-1 STP13NM50N STB13NM50N-1 STF13NM50N STB13NM50N STW13NM50N F13NM50N

    TSSOP14

    Abstract: TSSOP28 pd0014 tssop14 st automotive
    Text: PD0014 Packing information Thin Shrink Small Outline Package for memory products Tape and Reel shipping media 1 Introduction Surface mounting packages can be supplied with Tape and Reel packing. The reels are standard 330mm diameter and contain between 2500 and 4000 devices.


    Original     		PDF PD0014 330mm TSSOP14 TSSOP28 pd0014 tssop14 st automotive

    W45NM60

    Abstract: STW45NM60 JESD97 650V
    Text: STW45NM60 N-channel 650V@Tjmax - 0.09Ω - 45A - TO-247 MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID STW45NM60 650V < 0.11Ω 45A • High dv/dt and avalanche capabilities ■ 100% avalanche tested ■ Low input capacitance and gate charge


    Original     		PDF STW45NM60 O-247 W45NM60 STW45NM60 JESD97 650V

    smd DIODE code marking 20A

    Abstract: smd code diode 20a STRH40N6SY1 STRH40N6SY3
    Text: STRH40N6SY3 N-channel 60V - 0.032Ω - SMD-0.5 Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH40N6SY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight


    Original     		PDF STRH40N6SY3 100kRad 34Mev/cm smd DIODE code marking 20A smd code diode 20a STRH40N6SY1 STRH40N6SY3

    12V ENERGY LIGHT CIRCUIT DIAGRAM

    Abstract: STRH10N25ESY3
    Text: STRH10N25ESY3 N-channel 250V - 0.95Ω - TO-257AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH10N25ESY3 250V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight


    Original     		PDF STRH10N25ESY3 O-257AA 100kRad 34Mev/cm 12V ENERGY LIGHT CIRCUIT DIAGRAM STRH10N25ESY3

    STRH100N10FSY3

    Abstract: STRH100N10FSY1
    Text: STRH100N10FSY3 N-channel 100V - 0.024Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH100N10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight


    Original     		PDF STRH100N10FSY3 O-254AA 100kRad 34Mev/cm STRH100N10FSY3 STRH100N10FSY1

    Untitled

    Abstract: No abstract text available
    Text: STRH80P6FSY3 P-channel 60V - 0.021Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH80P6FSY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight


    Original     		PDF STRH80P6FSY3 O-254AA 100kRad 34Mev/cm

    MULTIGIG RT2 CONNECTOR

    Abstract: Cat 3056
    Text: 2 THIS £ L D R A WI N G IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R 1G H T S 20 LOC GP RESERVED. R E V ISIONS DIST 00 LTR DESCRIPTION DATE 20FEB2006 RT GGG RELEASED 18DEC2006 RT GG REV PER E C O - 0 8 - 0 2 3 2 2 9


    OCR Scan     		PDF COPYRIGHT20 ECO-08-023229 20FEB2006 18DEC2006 I7SEP2008 I7FEB2006 3IMAR2000 MULTIGIG RT2 CONNECTOR Cat 3056