2SC4131

Abstract: transistor 2sc4131 VEBO-15V
Contextual Info: 2SC4131 LOW VCE sat Silicon NPN Epitaxial Planar Transistor V 60 to 360 VCE=1V, IC=5A IB 4 A VCE(sat) IC=5A, IB=80mA 0.5max PC 60(Tc=25°C) W VBE(sat) IC=5A, IB=80mA 1.2max V Tj 150 °C fT VCE=12V, IE=–1A 18typ MHz –55 to +150 °C COB VCB=10V, f=1MHz

Contextual Info: CA-6,3 1.05 .29 .20 .14 .01 .19 .28 .36 .45 .07 typ 4 plc's 3 button option .06 7° 2.35 1.51 2.32 2.18 .04 typ. 12 plc's 1.94 1.64 1.53 2.50 1.08 .18typ. 6 plc's 3.05 .26 typ. 6 plc's .46 .05 R.11 typ. 2 plc's TOP VIEW SHOWING CIRCUIT BOARD DIMENSIONS .36

P300E-24

Abstract: P300E P150E12 P1500E-24 P150E-15 P15E-24 p150e-24 P600E-12 P1500E-5 P15E-12
Contextual Info: Ordering information Unit type P15E P P 1 15 2 E 3 -5 4 -O 5 1Series name 2Output wattage 3UL recognized,TuV approved, CSA certified:E 4Output voltage 5Optional C :with Coating G :Low leakage current J :Connector type N :with Cover R MODEL MAX OUTPUT WATTAGE[W]

FET 2SK125

Abstract: FET 2SK109 2SK109 2SK105 2SK97 2SK104 2sk109a 2SK120 2SK107 2SK124
Contextual Info: - 32 - m. % tt ffl € ÌÉ m & f ;E Y * 1 Ä ^ fë $ P d/Pc h ft K 2S K 8 4 föT LF LN A 2SK85 NEC X-Band LN A/OSC 2 S K 8 7 H HÍZ1 LF LN A 2S K 8 9 B ÎL GaAs/SB m V* (V) *t* (V) * ft (W) (A) N D -5 5 G D O 10 b G 100m N D -1 0 G D O 100m D 500m N D

P300E-24

Abstract: P1500E-24 P300E-5 P600E-24 RP300E P150E12 P300E-15 PT1500U-24 P15E5 p150e-24
Contextual Info: Ordering information Unit type P15E P P 1 15 2 E 3 -5 4 -O 5 1Series name 2Output wattage 3UL recognized,TuV approved, CSA certified:E 4Output voltage 5Optional *3 C :with Coating G :Low leakage current J :Connector type N :with Cover R MODEL MAX OUTPUT WATTAGE[W]

Contextual Info: fZ T S G S -T H O M S O N K lIO T M O lg l ] M S T T B 2 0 0 6 P(I TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f (a v ) 20A V rrm 600V trr (typ) 55ns Vf K. 1.3V (max) FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERA­

2SC2307

Abstract: c2307 Sanken Transistor Mt 200 Sanken Transistor
Contextual Info: I SANKEN ELECTRIC CO LTP SSE ]> • 7^0741 DDOOTMa 575 « S A K J Silicon NPN Triple Diffused Planar ☆ H i g h V oltage S w itch in g T ra n s is to r 2SC2307 Application Example : • Outline Drawing 2 S w itc h in g R egulator and General Purpose ■M T-100 T03P

2sc2810

Abstract: sanken transistor
Contextual Info: SANKEN ELECTRIC CO LT» SSE D • 7 ^ 0 7 4 1 G O ü O ' m IDI H S A K J Silicon NPN Triple Diffused Planar - - o ☆High Voltage Switching Transistor 2SC2810 ^ i ' Application Example : eOutline Drawing 1 Switching Regulator and General Purpose * ••■•MT-25 T022Q

BB409

Abstract: BF960 BF966 BF963 GP 004 DIODE BB505G LT 5202 diode
Contextual Info: SIEMENS/ SPCLt SEHXCONJS 7DC S B 8S3t320 0013823 8 m Discrete Semiconductors For High Frequency Applications t - o i- c / O Siemens is a major supplier of high frequency discrete semiconductors. An extensive line of tuner and band switch diodes, RF, Microwave and Dual

Contextual Info: 18-Type 155 MHz SAW Filter 18-Type155 M Hz SAW Filter 76 Features D escription • Com patible w ith SONET OC-3 and SDH STM1 Standards ■ Standard 14-pin DIP configuration ■ Single-ended or balanced input and output ■ Choice of center frequency ■ Consistent perform ance

2450DP15K5400

Contextual Info: "High Frequency Ceramic Solutions" 2.45 / 5.4GHz Ceramic Chip Diplexer LPF/BPF type P/N 2450DP15K5400 Detail Specification: 12/15/2011 Page 1 of 2 General Specifications 2450DP15K5400 Part Number Return Isolation Loss (dB) (dB) Passband (MHz) Insertion Loss (dB)

2SC4131

Contextual Info: 2SC4131 LOW VCE sat Silicon NPN Epitaxial Planar Transistor V IEBO VEB=15V 10max µA 15 V V(BR)CEO 50min V 15(Pulse25) A hFE IC=25mA 60 to 360 VCE=1V, IC=5A IB 4 A VCE(sat) IC=5A, IB=80mA 0.5max PC 60(Tc=25°C) W VBE(sat) IC=5A, IB=80mA 1.2max V Tj 150 °C

VDE0805

Contextual Info: 1/6 DC to DC Converters Distributed Power Supplies for Systems, Insulation Type Quarter Brick Type iQM Series Power supply systems for infrastructure devices used in communication networks primarily use brick-type DC to DC converters. Some parts of these devices require low voltage and power.

2SK192

Abstract: 2SK192 fet 2SK160A 2SK185 2sk180 2sk163 nec 2SK191 2sk163 nec 2sk163 2sk183
Contextual Info: - 36 - m f =e M £ 2SK160A tt NEC 2SK161 € ffl m m ftt & V* K V *:ft * LF/VHF A J N D -50 GDO FM/VHF RF J N D -18 GDO A 3: ft -50 0 (V) S fé i* (A) X P d/P c h Ig s s (max) ft (W) (A) Vg s (V) Sa M (min) (max) Vd s (A) (A) (V) 4# (Ta=25°C) 1* (min) (max) V d s

d2494

Abstract: c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493
Contextual Info: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in

Contextual Info: fiZ T SGS-THOMSON ^7# MDe^OILIigTriOKineS STTB3006P I TURBOSWITCH ”B". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f(av) 30A V rrm 600V trr (typ) 60ns Vf PRELIMINARY DATA 1.3V (max) FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERA­

Contextual Info: SSE T> • SANKEN ELECTRIC CO LTD 7TÌD741 QQODTflO 14S « S A K J Silicon NPN Epitaxial Planar ■fr L o w VcElsat S w itc h in g T ra n s is to r 2SC4131 Application Example: DC to DC Converter, Emergency Lighting Inverter, and General Purpose •FM100

8284 clock generator

Abstract: 8 bit barrel shifter 8259 Programmable Interrupt Controller barrel shifter with flip flop 80286 schematic 8254 programmable interval timer 8254 aa nand gate layout schematic diagram ac-dc inverter B180
Contextual Info: O K I SEMICONDUCTOR GRÒ 4bE D b724240 OOiasa? 7T7 OKIJ T - H 2 - H i MAY 1989 OKI PRELIMINARY SEMICONDUCTOR M S M 9 1 U 0 0 0 1 .2 |im S T A N D A R D C E L L GENERAL DESCRIPTION OKI’s MSM91U000 is a high speed standard cell product fabricated using a high performance 1.2|im

3R230

Abstract: 3R230W 200a smd B 1449 transistor e314 marking code UL SMD Transistor transistor smd code marking 420 SMD MARKING CODE 501
Contextual Info: Gas Discharge Tube： ：GQF Series SMD 3-Electrodes Φ5*7.2 mm Symmetrical Type Features 1. RoHS compliant 2. Rugged ceramic-metal construction 3. DC spark-over voltage: 230~1100V 4. Low capacitance 5. Agency recognition: UL/cUL Recommended Applications 1. Data transmission lines

dc spark-over voltage

Abstract: smd code T7
Contextual Info: Gas Discharge Tube: GQF-W Series SMD 3-Electrodes Φ5*T7.2 mm Symmetrical Type  Features 1. RoHS & HF compliant 2. Rugged ceramic-metal construction 3. DC spark-over voltage: 230~1100V 4. Low capacitance 5. Agency recognition: UL / cUL 6. Operating temperature : -30℃ ~ +85℃

2SK241 Equivalent FET

Abstract: 2SK117 equivalent 200 Amp mosfet k 2545 MOSFET 3sk fet 2SK192A equivalent 2SK241 equivalent tv ic equivalent 2SK161 equivalent gaas fet vhf uhf
Contextual Info: Super-Mini FET SOT-23MOD, SOT-143MOD F5/F6 Electrical Characteristics (Ta=25“C) Mark Equivalent other package Type No. 1.2MIN J 2SK30ATM 15TYP X 2SK117 7TYP Y 2SK192A 1.0-10 9TYP K 2SK161 1.5-14 10TYP T 2SK241 0.6-6.5 1.5MIN KA 2SK373 Application V d s x V ooo

c5287 equivalent transistor

Abstract: transistor d2495 c4131 TRANSISTOR REPLACEMENT GUIDE B1560 equivalent Sanken Power Transistors C3679 equivalent shinetsu G746 C3834 transistor c4468 power transistor equivalent 2SC3854 equivalent
Contextual Info: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in

T3D zener DIODE

Abstract: T3D 63 ZENER DIODE transistor SMD S73 T3D zener DIODE 44 SmD TRANSISTOR a77 T3D 25 DIODE clamp T3D DIODE clamp T3D 04 DIODE T3D 67 diode
Contextual Info: SIEMENS flSBSbOS DDISTbô S73 • PRÜFET b TS 432 E2 Smart Highside Power Switch Product Summary Features • • • • • • • • • • • • Load dump and reverse battery protection1 80 VLoad dump Clamp of negative voltage at output Vbb- V o u t Avalanche Clamp

GQF3R090NRM

Abstract: 200a smd B 1449 transistor 3-Electrode GQF3R075NRM
Contextual Info: Gas Discharge Tube： ：GQF Series SMD 3-Electrode Φ5*7.2 mm Type Features 1. RoHS compliant 2. Rugged ceramic-metal construction 3. DC spark-over voltage：75~1100V 4. Low capacitance 5. Agency recognition :UL/cUL Recommended Applications 1. Data transmission lines