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Catalog Datasheet	MFG & Type	Document Tags	PDF
8F157 Abstract: relay 3500 1210 241 ne02133t1b ne02133 MARKING NE021-33 Amplifier Micro-X "marking code" D Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression s	Original	NE021 NE02135 NE02139 07/07B NE02133" NE02133 8F1573FD7D76BE9F795396E6F54D44. 30-Sep-2010 8F157 relay 3500 1210 241 ne02133t1b ne02133 MARKING NE021-33 Amplifier Micro-X "marking code" D	PDF
Untitled Abstract: No abstract text available Text: PWS Axial leaded polypropylene film with aluminum foil electrodes capacitors for power semiconductors Features •  Self Healing High current   Low ESR High pulse current ratings   Switching power supplies Deflection circuits Applications 	Original	100VDC Ca52KJ 153PWS630KD 154PWS630KG 17x29 153PWS102KG 154PWS630KJ 153PWS152KG 154PWS102KJ 153PWS202KG	PDF
Untitled Abstract: No abstract text available Text: High dvdt – Good Pulse Current – Stable with temperature and Frequency FEATURES APPLICATIONS Inverters/Converters – Power Semiconductor circuits – Induction Heating – Switching Power Supplies Operating Temperature Range -55°C to +85°C +10% at 1 kHz, 25°C	Original	100VDC 405PPA850KS 205PPA850K 29x55 475PPA700KS 205PPA102KR 475PPA700K 205PPA102KS 475PPA850KS 205PPA122KR	PDF
PCC89 Abstract: Btm 220 uPD754264 6P60-P63 PD754264GS-XXX-BA5 BTM-111 F88H BC 248 n4233268 U12287E Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	PD754264 U12287JJ1V1UM00 PD754264, 75F4264. FAX044548-7900 PCC89 Btm 220 uPD754264 6P60-P63 PD754264GS-XXX-BA5 BTM-111 F88H BC 248 n4233268 U12287E	PDF
Btm 220 Abstract: 275mov hlx crystal PD754144 uPD754144 uPD754244 PTH01 Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	PD754144 PD754144 PD754244 U10676JJ3V0UM00 U10676JJ3V0UM U10676JJ PD754144, FAX044435-9608 Btm 220 275mov hlx crystal uPD754144 uPD754244 PTH01	PDF
Untitled Abstract: No abstract text available Text: Polypropylene Film Capacitors for Power Semiconductor Circuits PPA • Snubber Capacitor for Energy Conversion • High Voltage in Power semiconductor Circuits • High current • SMPS • High Pulse Current Applications • Induction heaters Operating Temperature Range	Original	100VDC 000x59 205PPA850K 29x55 475PPA700K 205PPA102KR 475PPA850KS 205PPA102KS 565PPA700KS 205PPA122KS	PDF
2SC1424 Abstract: 2SC1733 pt 5767 Rf transistor 2SC2026 transistor 2sc2026 transistor "micro-x" "marking" 3 2SC2148 NE734 NE73400 NE73416 Text: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES • LOW NOISE FIGURE: < 3 dB at 500 MHz • HIGH GAIN: 15 dB at 500 MHz • HIGH GAIN BANDWIDTH PRODUCT: 2 GHz 3 GHz for the NE73435 • SMALL COLLECTOR CAPACITANCE: 1 pF • DUAL CHIP CONFIGURATIONS	Original	NE734 NE73435) NE734 OT-143) 24-Hour 2SC1424 2SC1733 pt 5767 Rf transistor 2SC2026 transistor 2sc2026 transistor "micro-x" "marking" 3 2SC2148 NE73400 NE73416	PDF
Untitled Abstract: No abstract text available Text: FEATURES Low ESR - High Current – High pulse current ratings APPLICATIONS Power semiconductor Circuits – SCR Commutation – Deflection Circuits – Switching Power supplies Operating Temperature Range Capacitance Tolerance AC voltage 50/60 Hz Dissipation Factor (MAX)	Original	100VDC 152KJ 153PWS630KD 154PWS630KG 17x29 153PWS102KG 154PWS630KJ 153PWS152KG 154PWS102KJ 153PWS202KG	PDF
Untitled Abstract: No abstract text available Text: PPA Axial leaded metallized polypropylene film capacitors for power semiconductors Features •  Self Healing High dvdt   Stable with frequency and temperature Good pulse current ratings   Switching power supplies Induction Heating Applications	Original	100VDC 205PPA850K 29x55 475PPA700K 205PPA102KR 475PPA850KS 205PPA102KS 565PPA700KS 205PPA122KS 565PPA700K	PDF
Micro-X Marking 865 Abstract: Amplifier Micro-X Marking 865 ne02133 MARKING ic 18752 35 micro-X Package MARKING CODE F Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION	Original	NE021 NE02107 NE2100 NE02107/NE02107B NE02130-T1 NE02133-T1B NE02135 NE02139-T1 Micro-X Marking 865 Amplifier Micro-X Marking 865 ne02133 MARKING ic 18752 35 micro-X Package MARKING CODE F	PDF
Untitled Abstract: No abstract text available Text: PPA Axial leaded metallized polypropylene film capacitors for power semiconductors Features •  Self Healing High dvdt   Stable with frequency and temperature Good pulse current ratings   Switching power supplies Induction Heating Applications	Original	100VDC 205PPA850KD34 475PPA700KS 205PPA850K 29x55 475PPA700K 205PPA102KR 475PPA850KS 205PPA102KS 565PPA700KS	PDF
s-parameter s11 s12 s21 Abstract: 2SC2351 NE02133-T1B GHZ micro-X Package ic 748 marking K "micro x" MICRO-X NE02107 NE02135 sot-23 MARKING CODE 431 Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression s	Original	NE021 NE02135 NE02139 NE021 NE02100 NE02107/NE02107B NE02133-T1B NE02139-T1 s-parameter s11 s12 s21 2SC2351 NE02133-T1B GHZ micro-X Package ic 748 marking K "micro x" MICRO-X NE02107 NE02135 sot-23 MARKING CODE 431	PDF
dh165 Abstract: xenon tube Text: LARGE SIZED ALUMINUM ELECTROLYTIC CAPACITORS PH Series �5~35℃ 5,000Times. �Non-solvent proof. �For photo flash. �RoHS compliant. �Halogen-free capacitors are also available. SPECIFICATIONS ltem Characteristics Rated Voltage 330 VDC Operating Temperature Range	Original	000Times. 120Hz) RC-3801A dh165 xenon tube	PDF
NE02135 Abstract: NE021 microwave oscillator 2SC2149 2SC2351 NE021 NE02100 NE02107 NE02133 NE02139 MICROWAVE TRANSISTOR Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION	Original	NE021 NE021 NE02107 NE2100 NE02107/NE02107B NE02133-T1B NE02135 NE02139-T1 24-Hour NE02135 NE021 microwave oscillator 2SC2149 2SC2351 NE02100 NE02133 NE02139 MICROWAVE TRANSISTOR	PDF

NEC 720114 Abstract: marvell 88sx7042 mobile charger circuit using 13001 online ups service manual back-ups ES 500 RTL8111DL 88SX7042 JM20330 Design Guide JM20330 hdd enclosure PL-2303HX Text: MAIN CATALOG 2010-II Graphic Adapter page 7 USB Serial Adapter page 32 Router RedRapid X page 46 Table of Contents Multimedia USB Microscope,	Original	2010-II DM-30017 NEC 720114 marvell 88sx7042 mobile charger circuit using 13001 online ups service manual back-ups ES 500 RTL8111DL 88SX7042 JM20330 Design Guide JM20330 hdd enclosure PL-2303HX	PDF
224PPA302KS Abstract: 103PPA302K 105PPA202K Text: Polypropylene Film Capacitors for Power Semiconductor Circuits PPA • Snubber Capacitor for Energy Conversion • High Voltage in Power emiconductor Circuits • High current • SMPS • High Pulse Current Applications • Induction heaters Operating Temperature	Original	100VDC 475PPA700K 155PPA152KS 37x59 475PPA700KS 205PPA700KN 29x46 475PPA850KS 205PPA850K 29x55 224PPA302KS 103PPA302K 105PPA202K	PDF
20X49 Abstract: No abstract text available Text: • rry m F* J1 Photo Flash Use Aluminum Electrolytic Capacitors • For photoflash use Specially Designed for Photoflash Use, Small and Large sized, Aluminum Electrolytic Capacitors. The aluminum electrolytic capacitor for photoflash use is a small sized, large capacitance capacitor which converts	OCR Scan	120Hz 600fiF 18x30 18x31 18x34 18x38 16x26 16x29 16x32 20X49	PDF
SVI 3104 c Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720 Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or	OCR Scan	AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720	PDF
OCI 531 Abstract: No abstract text available Text: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES • LOW NOISE FIGURE: < 3 dB at 500 MHz • HIGH GAIN: 15 dB at 500 MHz • HIGH GAIN BANDWIDTH PRODUCT: 2 GHz 3 GHz for the NE73435 • SMALL COLLECTOR CAPACITANCE: 1 pF • HIGH RELIABILITY METALLIZATION	OCR Scan	NE73435) NE734 NE73400) NE7343-323) OT-23) 24-Hour OCI 531	PDF
2SC1424 Abstract: MARKING Dt3 sot23 transistor 2SC2148 017 545 71 32 02 j60 mic mic J60 v3le 2SC202 2SC4185 NE734 Text: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES • LOW NOISE FIGURE: < 3 dB at 5 0 0 M H z • HIGH GAIN: 15 dB a t 5 0 0 M H z • HIGH GAIN BANDWIDTH PRODUCT: 2 G H z 3 G H z for th e N E 7 3 4 3 5 • SMALL COLLECTOR CAPACITANCE: 1 p F	OCR Scan	NE734 NE73435) NE73400) PACKAGEOUTUNE30 PACKAGEOUTUNE33 OT-23) PACKAGEOUTUNE33 PACKAGEOUTUNE39 OT-143) 2SC1424 MARKING Dt3 sot23 transistor 2SC2148 017 545 71 32 02 j60 mic mic J60 v3le 2SC202 2SC4185	PDF
2SC2570 Abstract: 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135 Text: NEC/ bM27414 0DDB354 SB? « N E C C 5bE D CALIFORNIA NEC T 3 V -2 3 NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco	OCR Scan	bM27414 QDDB354 T3V-23 NE021 2SC2570 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135	PDF
18x29 Abstract: No abstract text available Text: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS ♦SPECIFICATIONS Items : Characteristics Category Temperature Range -20 to + 5 5 t Rated Voltage Range Capacitance Tolerance Leakage Current 300 & 330V* -10 to +20% V 1=1XC Where, I : Max. leakage current (pA), C : Nominal capacitance (mR	OCR Scan	06max. 120Hz) 10X26 10X33 10X43 16X24 16X27 16X28 16X30 18x29	PDF
JF11 Abstract: NE02133-T1B Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LA RGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 G Hz Gain Com pression	OCR Scan	NE021 NE02107 OT-23) NE2100 NE02107/NE02107B NE02130-T1 NE02133-T1B JF11	PDF
SAA 1006 Abstract: si 18752 K 1723 NE02132 2sc2570 transistor SAA 1058 saa 5000 0958K Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression	OCR Scan	NE021 NE02107 OT-23) SAA 1006 si 18752 K 1723 NE02132 2sc2570 transistor SAA 1058 saa 5000 0958K	PDF

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8F157

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PCC89

Btm 220

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2SC1424

Untitled

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Micro-X Marking 865

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s-parameter s11 s12 s21

dh165

NE02135

NEC 720114

224PPA302KS

20X49

SVI 3104 c

OCI 531

2SC1424

2SC2570

18x29

JF11

SAA 1006