sartorius
Abstract: AR237J PAR710 D9000 ellipsometer photoresist
Text: 193nm CD shrinkage under SEM: modeling the mechanism Andrew Habermas1, Dongsung Hong1, Matthew Ross2, William Livesay2 Cypress Semiconductor, 2401 East 86th St, Bloomington, MN 55425 2 Electron Vision Corp., 10119 Carroll Canyon Road, San Diego, CA 92131-1109l
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193nm
92131-1109l
248nm
sartorius
AR237J
PAR710
D9000
ellipsometer
photoresist
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Untitled
Abstract: No abstract text available
Text: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS Diffractive Gaussian Generators Gaussian intensity proiles are well-deined, continuous and exhibit smooth edges. They are well suited for overlapping laser processing. Many high-power lasers, such
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029116-003-99-14-0410-en
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TSMC 40nm
Abstract: EP4SE230 interlaken EP4SE360 EP4SE530 EP4SGX70 GPON SoC
Text: think AND not OR Altera @ 40 nm What if you could design with the highest performance AND the lowest power? With the benefits of both FPGAs AND ASICs? With design software delivering the highest logic utilization AND the fastest compile times? You can, with
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40-nm
GB-01007-1
TSMC 40nm
EP4SE230
interlaken
EP4SE360
EP4SE530
EP4SGX70
GPON SoC
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Treadmill
Abstract: POWER SUPPLY for Treadmill ionizer teflon af asahi glass delay line u-key hydrocarbon polymeric symposium NIKON 13Nm
Text: 157-nm Lithography for 100-nm Node Challenges and Progress G. Dao and Y. Borodovsky Acknowledgment The Japan Electronic Journal P. Gargini, P. Silverman, F. C. Lo, A. Grenville, L. Liao, E. Panning, Orvek, and J.F. Zheng R =
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157-nm
100-nm
Treadmill
POWER SUPPLY for Treadmill
ionizer
teflon af
asahi glass delay line
u-key
hydrocarbon polymeric
symposium
NIKON
13Nm
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211-HSG-D09-SR
Abstract: 212-PINFHD-26
Text: Company Profile DE: UK: F: Info@allectra.com uk@allectra.com fr@allectra.com Allectra – Mechanical, Electrical and Optical Components for UHV and High Vacuum COMPANY HISTORY Allectra GmbH was founded in 2002 in Berlin. Within the first year, the range of Sub-D Feedthroughs and associated
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TSMC Flash 40nm
Abstract: CEI-6G-SR TSMC 40nm EP4SGX230F40 interlaken EP2AGX125F35 CPRI Multi Rate SAS controller chip 110G OTN fpga 10.7
Text: Full spectrum Simple bridging. Bandwidth-hungry, media-rich applications. Or something in between. No matter the scope, create your designs with the broadest portfolio of FPGAs and ASICs with transceivers. From low cost to the widest range of speeds and densities, you’ll have a full spectrum
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40-nm
GB-01008-1
TSMC Flash 40nm
CEI-6G-SR
TSMC 40nm
EP4SGX230F40
interlaken
EP2AGX125F35
CPRI Multi Rate
SAS controller chip
110G
OTN fpga 10.7
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Abstract: No abstract text available
Text: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS Diffractive Optical Elements for off-axis Illumination Multipole pupil illumination patterns are required to achieve the highest resolution in mask projection
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0129110-003-99-14-0410-en
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ipl xenon
Abstract: gore membrane vents power supply for magnetron 80-wafer-per-hour schematic diagram of ip camera ,ipl xenon spy camera circuit diagram spy camera schematic diagram intel atom carl zeiss
Text: MICROPROCESSOR REPORT www.MPRonline.com T H E I N S I D E R ’ S G U I D E T O M I C R O P R O C E S S O R H A R D WA R E EXTREME LITHOGRAPHY Intel Backs EUV for Next-Generation Lithography By Ke ith D ie fe ndor ff {6/19/00-01} Working at the very boundary between theoretical physics and practical engineering, scientists at Lawrence Livermore, Sandia, and Lawrence Berkeley National Laboratories
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