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    1BIT CMOS STATIC RAM Search Results

    1BIT CMOS STATIC RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation

    1BIT CMOS STATIC RAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HM621100AP-35

    Abstract: HM621100A HM621100AJP-20 HM621100AJP-25 HM621100AJP-35 HM621100ALP-20 HM621100ALP-25 HM621100ALP-35 HM621100AP-20 HM621100AP-25
    Text: HM621100A Series 1048576-word x 1-bit High Speed CMOS Static RAM Rev. 0.0 Dec. 1, 1995 Description The Hitachi HM621100A is a high speed 1M Static RAM organized as 1048576-word × 1bit. It realizes high speed access time 20/25/35 ns and low power consumption, employing


    Original     		PDF HM621100A 1048576-word 32-bit HM621100A, 400-mil 28-pin HM621100A HM621100AP-35 HM621100AJP-20 HM621100AJP-25 HM621100AJP-35 HM621100ALP-20 HM621100ALP-25 HM621100ALP-35 HM621100AP-20 HM621100AP-25

    4096 RAM

    Abstract: 8 bit memory ic 16 BIT WORD STATIC RAM "Video RAM" 524,288 9bit HM658512 DYNAMIC RAM 16384-WORD HM628512 RAM HM63021
    Text: CONTENTS • Quick Reference Guide to Hitachi IC Memories . 7 • MOS RAM.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs MITSUBISHI LSIs M5M5257EJ-10,-12 M5M5257EJ-10,-12 262144-BIT 262144-WORD BYBY 1-BIT CMOS STATIC RAM 262144-BIT (262144-WORD 1-BIT) CMOS STATIC RAM DESCRIPTION The M5M5257E is a family of 262144-word by 1-bit static RAMs, fabricated with the high-performance CMOS silicon-gate MOS


    Original     		PDF M5M5257EJ-10 262144-BIT 262144-WORD M5M5257E M5M5257EJ M5M5257EJ-10

    IDT6167

    Abstract: IDT6167LA IDT6167SA
    Text: CMOS Static RAM 16K 16K x 1-Bit IDT6167SA IDT6167LA Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ high reliability CMOS technology. Access times as fast as 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit


    Original     		PDF IDT6167SA IDT6167LA IDT6167 IDT6167LA IDT6167SA

    Untitled

    Abstract: No abstract text available
    Text: CMOS Static RAM 16K 16K x 1-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT6167SA IDT6167LA OBSOLETE PART high reliability CMOS technology. Access times as fast as 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit


    Original     		PDF IDT6167SA IDT6167LA IDT6167 PDN-SR-07-01 6167SA/LA

    2981 24 pin

    Abstract: ldt6167
    Text: IDT6167SA IDT6167LA CMOS Static RAM 16K 16K x 1-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ high reliability CMOS technology. Access times as fast as 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit


    Original     		PDF IDT6167SA IDT6167LA IDT6167 package00 x4033 2981 24 pin ldt6167

    Untitled

    Abstract: No abstract text available
    Text: IDT6167SA IDT6167LA CMOS Static RAM 16K 16K x 1-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ high reliability CMOS technology. Access times as fast as 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit


    Original     		PDF IDT6167SA IDT6167LA 25/35/45/55/70/85/100ns 15/20/25ns IDT6167LA 20-pin MIL-STD-883, x4033

    8A109

    Abstract: A1823 1048576-WORD 1,048,576 16 bit
    Text: MITSUBISHI LSIs MITSUBISHI LSIs M5M51001CJ-12,-15,-20 M5M51001CJ-12,-15,-20 1048576-BIT 1048576-WORD BYBY 1-BIT CMOS STATIC RAM 1048576-BIT (1048576-WORD 1-BIT) CMOS STATIC RAM DESCRIPTION The M5M51001CJ are a family of 1048576-word by 1-bit static RAMs, fabricated with the high performance CMOS silicon gate


    Original     		PDF M5M51001CJ-12 1048576-BIT 1048576-WORD M5M51001CJ 28-pin 8A109 A1823 1,048,576 16 bit

    32P0K

    Abstract: M5M54R01AJ-12 M5M54R01AJ-15
    Text: MITSUBISHI LSIs 1998.11.30 Ver.B M5M54R01AJ-12,-15 PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change 4194304-BIT 4194304-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION The M5M54R01AJ is a family of 4194304-word by 1-bit


    Original     		PDF M5M54R01AJ-12 4194304-BIT 4194304-WORD M5M54R01AJ M5M54R01AJ-12 M5M54R01AJ-15 32P0K M5M54R01AJ-15

    125OC

    Abstract: IDT6167 IDT6167LA IDT6167SA
    Text: IDT6167SA IDT6167LA CMOS Static RAM 16K 16K x 1-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ high reliability CMOS technology. Access times as fast as 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit will automatically go to, and remain in, a standby mode as long as CS


    Original     		PDF IDT6167SA IDT6167LA IDT6167 x4033 125OC IDT6167LA IDT6167SA

    Untitled

    Abstract: No abstract text available
    Text: IDT7187S IDT7187L CMOS Static RAM 64K 64K x 1-Bit Description Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ The IDT7187 is a 65,536-bit high-speed static RAM organized as 64K x 1. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. Access times as fast as 25ns are available.


    Original     		PDF IDT7187S IDT7187L 25/35/45/55/70/85ns 22-pin MIL-STD-883, IDT7187 536-bit D22-1) IDT7187S/L

    a6dc

    Abstract: No abstract text available
    Text: KM41C16002A CMOS DRAM 16M x 1Bit CMOS Dynamic RAM with Static Column Mode DESCRIPTION This is a fam ily of 16,777,216 x 1 bit Static Column Mode CMOS DRAMs. Static Column Mode offers high speed random access of memory cells within the same row. Access time -5, -6, -7 or -8 and package


    OCR Scan     		PDF KM41C16002A 16Mx1 00505L7 a6dc

    Untitled

    Abstract: No abstract text available
    Text: KM41C16002A CMOS ORAM 16M x 1Bit CMOS Dynamic RAM with Static Column Mode DESCRIPTION This is a fam ily of 16,777,216 x 1 bit Static Column Mode CMOS DRAMs. Static Column Mode offers high speed random access of memory cells within the same row. Access time -5, -6, -7 or -8 and package


    OCR Scan     		PDF KM41C16002A 16Mx1 KM41C16002A

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LS Is SRAM MODULE MH1 M09SSP-25,-35,-45 -ÍW S«", a 9437184-BIT (1048576-WORD BY 9-BIT) CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) [Single side] This is consists nine industry 1M x 1bit static RAMs in TSOP. A6 1 2 3 4 A7 5 A8 6


    OCR Scan     		PDF M09SSP-25 9437184-BIT 1048576-WORD MH1M09SSP-25 MH1M09SSP-35. MH1M09SSP

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC L7E D • 7 ^ 4 1 4 2 DDlSb30 77D ■ SM6K KM41C4002B CMOS DRAM 4M x 1Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM 41C4002B is a C M O S high speed 4,194,304 x 1 Dynamic Random A cce ss Memory. Its de­


    OCR Scan     		PDF DDlSb30 KM41C4002B 41C4002B 41C4002B-6 110ns 41C4002B-7 130ns 41C4002B-8 150ns R55-only

    61256

    Abstract: M6125
    Text: AT&T Data Sheet M 61256 Radiation-Hard 256K x 1-Bit S tatic RAM Features • Radiation-hard, 1.25 /im bulk-CMOS technology ■ Fast address access time: <50 ns at 80 °C, 4.5 V post-Rad ■ TTL and CMOS compatible inputs and outputs ■ 3-state output ■ Low operating power: <25 mW/MHz


    OCR Scan     		PDF D-8043 3-02A/04 DS89-Q67MMOS 61256 M6125

    Untitled

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 256K 256K x 1-BIT PRELIMINARY IS !” FEATURES: DESCRIPTION: • The ID T71257 Is a 2 6 2 ,144-bit high-speed static RAM organized as 256K x 1. It is fabricated using ID T’s high-performance, high-rellability C E M O S technology. This state-of-the-art technology,


    OCR Scan     		PDF T71257 144-bit 200mV IDT71257S/IDT71257L 256Kx MIL-STD-883,

    pd 3174

    Abstract: ACS35
    Text: 256K 256K x 1-BIT CMOS STATIC RAM PLASTIC SIP MODULE ID T 7 M P 1 5 6 FEATURES: DESCRIPTION • High-density 256K (256K x 1) CMOS static RAM module The IDT7MP156 is a 256K (256K x 1-bit) high-speed static RAM module constructed on an epoxy laminate surface using four


    OCR Scan     		PDF 28-pin 600mW IDT7187 IDT7MP156 200mV 7MP156 256Kx pd 3174 ACS35

    Untitled

    Abstract: No abstract text available
    Text: M 61064 Radiation-Hard 64K x 1-Bit S tatic RAM Features • Radiation-hard, 1.25 /¿m bulk-CMOS technology ■ Fast address access time: < 50 ns at 80 °C, 4.5 V post-Rad ■ TTL and CMOS compatible inputs and outputs ■ 3-state output ■ Low operating power: <20 mW/MHz


    OCR Scan     		PDF D-8043 3-02A/04 DS89-52MMOS

    S-1317

    Abstract: No abstract text available
    Text: 256K 256K x 1-BIT CMOS STATIC RAM PLASTIC SIP MODULE ID T 7 M P 1 5 6 FEATURES: DESCRIPTION • Hlgh-density 256K (256K x 1) CMOS static RAM module The IDT7MP156 is a 256K (256K x 1-bit) high-speed static RAM module constructed on an epoxy laminate surface using four


    OCR Scan     		PDF 28-pin 600mW IDT7187 200mV IDT7MP156 7MP156 S13-176 S-1317

    7MC156

    Abstract: No abstract text available
    Text: IDT 7MC156 256K 256K x 1-BIT CMOS STATIC RAM SIP MODULE FEATURES: DESCRIPTION: • High-denslty256K (256K x 1) CMOS static RAM module • Surface mounted LCC components mounted on a co-flred ceram ic substrate • Available In low profile 28-pin ceram ic SIP (single In-line


    OCR Scan     		PDF High-denslty256K 28-pin 600mW IDT7187S 7MC156 S13-144 IDT7MC156 7MC156 S13-145

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LS Is M5M51001P,J-25, -35,-45, -25L,-35L,-45L 1048576-BIT 1048576-WQRD BY 1-BIT CMOS STATIC RAM DESCRIPTION The M5M51001 is a family of 1048576-word by 1-bit static RAMs, fabricated with the high-performance CMOS silicon- PIN CONFIGURATION (TOP VIEW)


    OCR Scan     		PDF M5M51001P 1048576-BIT 1048576-WQRD M5M51001 1048576-word 400mW

    Untitled

    Abstract: No abstract text available
    Text: I 1324^25 00214307 b?0 • M I T I M ITSUBISHILSIs M5M51001P,J-25, -35,-45, -25L,-35L,-45L 1048576-BIT 1048576-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M5M51001 is a family of 1048576-word by 1-bit static RAMs, fabricated with the high-performance CMOS silicon-


    OCR Scan     		PDF M5M51001P 1048576-BIT 1048576-WORD M5M51001 -25Lr

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs M5M51001 BP,J-15,-20,-25,-20L,-25L 1048576-BIT 1048576-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION Ttie M5M51001BP.J are a family of 1048576-word by 1-bit static RAMs, fabricated with the high performance CMOS silicon gate process and designed for high-speed application.


    OCR Scan     		PDF M5M51001 1048576-BIT 1048576-WORD M5M51001BP 28-pin 1048576-BIT