Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1087A 2SC5347A RF Transistor 12V, 150mA, fT=4.7GHz, NPN Single PCP http://onsemi.com Features High-frequency medium output amplification VCE=5V, IC=50mA : fT=4.7GHz typ (f=1GHz) : ⏐S21e⏐2=8dB typ (f=1GHz) : NF=1.8dB typ (f=1GHz)
|
Original
|
ENA1087A
2SC5347A
150mA,
S21e2
900mm2
A1087-8/8
|
PDF
|
MBR0550T
Abstract: No abstract text available
Text: ISL59444 Data Sheet February 16, 2012 1GHz, 4x1 Multiplexing Amplifier with Synchronous Controls Features • 1GHz -3dB Bandwidth (VOUT = 200mVP-P) The ISL59444 is a single-output 4:1 MUX-amp. The MUX-amp has a fixed gain of 1 and a 1GHz bandwidth. The ISL59444 is
|
Original
|
ISL59444
FN7451
ISL59444
MBR0550T
|
PDF
|
pcb 3.5mm schematics
Abstract: 3.5mm PCB RF
Text: Miniature Slides for High Frequency Series FS Distinctive Characteristics For high frequency DC through 1GHz : Isolation 40dB minimum at 1GHz. Insertion loss 0.5dB maximum at 1GHz. Impedance 75 ohms Innovative alternative to relay products Actual Size with Tall Actuator
|
Original
|
90MHz
FS22ABP
pcb 3.5mm schematics
3.5mm PCB RF
|
PDF
|
TACTILE SWITCH
Abstract: No abstract text available
Text: Miniature Slides for High Frequency Series FS Distinctive Characteristics For high frequency DC through 1GHz : Isolation 40dB minimum at 1GHz. Insertion loss 0.5dB maximum at 1GHz. Impedance 75 ohms Innovative alternative to relay products Actual Size with Tall Actuator
|
Original
|
90MHz
FS22ABP
TACTILE SWITCH
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Toggles Series FS Rockers General Specifications Pushbuttons For high frequency DC through 1GHz : Isolation 40dB minimum at 1GHz. Insertion loss 0.5dB maximum at 1GHz. Impedance 75 ohms Actual Size with Tall Actuator Programmable Illuminated PB Innovative alternative to relay products
|
Original
|
90MHz
FS22ABP
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Toggles Series FS Rockers General Specifications Pushbuttons For high frequency DC through 1GHz : Isolation 40dB minimum at 1GHz. Insertion loss 0.5dB maximum at 1GHz. Impedance 75 ohms Programmable Illuminated PB Highly reliable, self-cleaning twin contact mechanism with gold plating
|
Original
|
90MHz
FS22ABP
|
PDF
|
Untitled
Abstract: No abstract text available
Text: S10040340 S10040340 40MHz to 1GHz GaAs Push Pull Hybrid 40MHz to 1GHz GaAs PUSH PULL HYBRID Package: SOT-115J Product Description Features The S10040340 is a Hybrid Push Pull amplifier module. The part employs GaAs die and is operated from 40MHz to 1GHz. It provides excellent linearity and superior return loss performance with low noise and optimal
|
Original
|
S10040340
40MHz
OT-115J
S10040340
|
PDF
|
S10040340
Abstract: No abstract text available
Text: S10040340 S10040340 40MHz to 1GHz GaAs Push Pull Hybrid 40MHz to 1GHz GaAs PUSH PULL HYBRID Package: SOT-115J Product Description Features The S10040340 is a Hybrid Push Pull amplifier module. The part employs GaAs die and is operated from 40MHz to 1GHz. It provides excellent linearity and superior return loss performance with low noise and optimal
|
Original
|
S10040340
40MHz
OT-115J
S10040340
280mA
24VDC
|
PDF
|
KT 839
Abstract: 2SA1963 ITR05023 ITR05024 ITR05025 ITR05026 ITR05027 TA-0541 marking MS
Text: Ordering number:ENN5230 PNP Epitaxial Planar Silicon Transistor 2SA1963 High-Frequency Low-Noise Amplifier, Ultrahigh-Speed Switching Applications Features Package Dimensions • Low noise : NF=1.5dB typ f=1GHz . 2 · High gain : | S2le | =9dB typ (f=1GHz).
|
Original
|
ENN5230
2SA1963
2018B
2SA1963]
KT 839
2SA1963
ITR05023
ITR05024
ITR05025
ITR05026
ITR05027
TA-0541
marking MS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF = 1.15dB typ. (@ f=1GHz) • High Gain:|S21e| = 10.5dB (typ.) (@ f=1GHz)
|
Original
|
MT3S113P
SC-62
|
PDF
|
BFG425W
Abstract: No abstract text available
Text: AN11449 Low Noise Flat Gain 40M~1GHz DVB-C LNA with BFG425W Rev.1 — 22 October 2013 Application note Document information Info Content Keywords BFG425W, 40M~1GHz LNA, DVB-C, Abstract This document provides circuit simulation, schematic, layout, BOM and typical EVB performance for a 40M ~ 1GHz DVB-C LNA
|
Original
|
AN11449
BFG425W
BFG425W,
BFG425W
|
PDF
|
RFDA0066
Abstract: JMK105BJ105KVLF TSW-106-07-G-S RFDA0066SB 433 mhz rf module spi TAJB106K016R PSF-S01-006
Text: RFDA0066 RFDA0066Digital Controlled Variable Gain Amplifier DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 5MHz TO 1GHz, 12-BIT 0.5dB LSB CONTROL Package Style: MCM 28-Pin, 6.0mmx6.0mm Features Frequency Range 5MHz to 1GHz Dual 6-Bit Digital Step Attenuator
|
Original
|
RFDA0066Digital
RFDA0066
12-BIT
28-Pin,
100MHz
39/22dBm
RFDA0066
DS120111
JMK105BJ105KVLF
TSW-106-07-G-S
RFDA0066SB
433 mhz rf module spi
TAJB106K016R
PSF-S01-006
|
PDF
|
ISL59424
Abstract: No abstract text available
Text: ISL59424, ISL59445 Data Sheet June 15, 2005 FN7456.0 1GHz Triple Multiplexing Amplifiers Features The ISL59424 and ISL59445 are 1GHz bandwidth multiplexing amplifiers designed primarily for video input switching. These MUX-amps exhibit a fixed gain of 1 and
|
Original
|
ISL59424,
ISL59445
FN7456
ISL59424
ISL59445
|
PDF
|
G428
Abstract: ISL59424
Text: ISL59424, ISL59445 Data Sheet August 10, 2005 FN7456.1 1GHz Triple Multiplexing Amplifiers Features The ISL59424 and ISL59445 are 1GHz bandwidth multiplexing amplifiers designed primarily for video input switching. These MUX-amps exhibit a fixed gain of 1 and
|
Original
|
ISL59424,
ISL59445
FN7456
ISL59424
ISL59445
G428
|
PDF
|
|
|
MT3S113
Abstract: transistor 2F to-236 4360A
Text: MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking
|
Original
|
MT3S113
O-236
SC-59
MT3S113
transistor 2F to-236
4360A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking
|
Original
|
MT3S113
O-236
SC-59
|
PDF
|
mt3s113p
Abstract: No abstract text available
Text: MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=10.5dB(Typ.) (@ f=1GHz) Marking
|
Original
|
MT3S113P
SC-62
mt3s113p
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ISL59424, ISL59445 Data Sheet September 30, 2011 FN7456.3 1GHz Triple Multiplexing Amplifiers Features The ISL59424, ISL59445 are 1GHz bandwidth multiplexing amplifiers designed primarily for video input switching. These MUX-amps exhibit a fixed gain of 1 and also feature a
|
Original
|
ISL59424,
ISL59445
FN7456
ISL59445
ISL59424
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=10.5dB(Typ.) (@ f=1GHz) Marking
|
Original
|
MT3S113P
SC-62
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1GHz Current Feedback Amplifier with Enable Features General Description • 1GHz -3dB bandwidth • 9mA supply current • Single and dual supply operation, from 5V to 10V supply span • Fast enable/disable EL5191AC only • Available in SOT23 packages
|
Original
|
EL5191C,
EL5191AC
EL5191AC
600MHz
EL5192C,
EL5292C,
EL5392C)
300MHz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RFDA0066 RFDA0066Digital Controlled Variable Gain Amplifier DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 5MHz TO 1GHz, 12-BIT 0.5dB LSB CONTROL Package Style: MCM 28-Pin, 6.0mmx6.0mm Features Frequency Range 5MHz to 1GHz Dual 6-Bit Digital Step Attenuator
|
Original
|
RFDA0066
RFDA0066Digital
12-BIT
28-Pin,
100MHz
39/22dBm
DS120111
075mm
|
PDF
|
RFDA0066SR
Abstract: No abstract text available
Text: RFDA0066 RFDA0066Digital Controlled Variable Gain Amplifier DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 5MHz TO 1GHz, 12-BIT 0.5dB LSB CONTROL Package Style: MCM 28-Pin, 6.0mmx6.0mm Features Frequency Range 5MHz to 1GHz Dual 6-Bit Digital Step Attenuator
|
Original
|
RFDA0066
RFDA0066Digital
12-BIT
28-Pin,
100MHz
39/22dBm
DS140303
075mm
RFDA0066SR
|
PDF
|
EL5191C
Abstract: EL5191CS EL5191CW-T13 EL5191CW-T7 EL5192C EL5193C EL5292C EL5293C EL5392C EL5393C
Text: EL5191C EL5191C 1GHz Current Feedback Amplifier Features General Description • 1GHz -3dB bandwidth • 9mA supply current • Single and dual supply operation, from 5V to 10V supply span • Available in 5-pin SOT23 package • High speed, 600MHz product
|
Original
|
EL5191C
600MHz
EL5192C,
EL5292C,
EL5392C)
300MHz
EL5193C,
EL5293C,
EL5393C)
EL5191C
EL5191CS
EL5191CW-T13
EL5191CW-T7
EL5192C
EL5193C
EL5292C
EL5293C
EL5392C
EL5393C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: January 1990 Edition 2.0 FUJITSU DATA SHEET MB511 1GHz HIGH SPEED PRESCALER HIGH SPEED PRESCALER The Fujitsu MB511 is a 1GHz high speed prescaler designed fo r use in PLL Phase Locked Loop frequency synthesizer application. The MB511 consumes low power 23mA at 5V up to 1GHz input frequency
|
OCR Scan
|
MB511
MB511
-20dBm
DIP-08P-M01
1000MHz
-20dBm)
250MHz
|
PDF
|
