1SS309 Search Results

4558 dd

Abstract: 5W393 4558 equivalent TA75558 LM358 TA75S393 TA75393 LM393 4558 4558 8 PIN
Contextual Info: F5/F6 Type No. 1 1 öS Max. Rating V r V SMV/SM6 USV/US8 Structure P(mW)* IO(mA) SMV/SM6 USVAJS6 Connection Mark 1SS308 80 100 300 200 1SS181 X 2 A1 1SS309 80 100 300 200 1SS184 X 2 A2 HN1D01F HN1D01FU 80 100 300 200 1SS181 X 2 HN1D02F HN1D02FU 80 100 300

Contextual Info: Product specification 1SS309 Unit: mm 4 5 Features Low forward voltage: VF 3 = 0.90V (typ.) Fast reverse recovery time:trr = 1.6ns(typ.) 1 Small total Capacitance:CT = 0.9pF(typ.) 2 3 Absolute M axim um R atings T a = 25 P aram eter M axim um (peak) reverse voltage

1SS309

Abstract: DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401
Contextual Info: - 1 74 nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ' *s y * y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m* iSÆismtÉ (WJAfc I Rmax fkñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)

1SS309

Abstract: DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401 DA6PC
Contextual Info: 17 4 - - nï m it « s fe aï V r rm Vr V (V) (fliA) 80 80 300 300 Io ,If* I fm <°C) (nA) I fsm cc> (A) 1SS308 1SS309 DA-3N DA-3P DA-4N * ') *s y * y -y y 85 85 35 35 35 DA-4P DA-6NC DA-6PC DA-8N DA-8P * * * * * y y y •) ') V y y * y î? y & y 35 35 35

628B

Abstract: 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401
Contextual Info: - 1 74 - nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ' *s y * y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m* iSÆismtÉ (WJAfc I Rmax fkñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)

1SS309

Abstract: DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401 m5x0.8
Contextual Info: - 1 74 - nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ' *s y * y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m* iSÆismtÉ (WJAfc I Rmax fkñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)

PC802

Abstract: DAP803 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803
Contextual Info: 1 74 - - nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N * * s ' * s y y -y y Vr V) (V) (fliA) 80 80 300 300 85 85 35 35 35 fe aï V r rm Io ,If* I fm <°C) (nA) I fsm cc> (A) Vpmax IR'JWl m * iS Æ ism tÉ (WJAfc I Rmax fk ñ (V) I F <mA) ( ß A) V f (V) <°C)

1SS309

Contextual Info: 1SS309 SILICON EPITAXIAL PLANAR TYPE ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm t*0.2 2.8-0.3 . Small Package SC-59 MOD . Low Forward Voltage V f ~ 0 .9V Typ. + 0.2 . Fast Reverse Recovery Time trr= l •6ns(Typ.) . Small Total Capacitance Ct = 0 .9(Typ.)

1SS309

Contextual Info: 1SS309 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS309 ○ 超高速度スイッチング用 z z z z : : : : 外形が小さい。 順方向特性が良い。 逆回復時間が短い。 端子間容量が小さい。 単位: mm

Contextual Info: 1SS309 T O SH IB A 1 SS309 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS. + 0.2 2 .8 - 0 .3 • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance + 0.2 : SC-74A

DAP801

Abstract: DA-6NC DAP803 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802
Contextual Info: - 1 74 nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ' * s * y y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m* iSÆismtÉ (WJAfc I Rmax fkñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)

DA-4P

Abstract: 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401
Contextual Info: 174 - - nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N * * s ' * s y y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m * iSÆismtÉ (WJAfc I Rmax fk ñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)

marking a2

Abstract: 1SS309
Contextual Info: Diodes SMD Type Ultra High Speed Switching Applications 1SS309 Unit: mm 4 5 Features Low forward voltage: VF 3 = 0.90V (typ.) Fast reverse recovery time:trr = 1.6ns(typ.) 1 Small total Capacitance:CT = 0.9pF(typ.) 2 3 Absolute M axim um R atings T a = 25

1SS309

Contextual Info: TOSHIBA 1SS309 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS309 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS. • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : SC-74A : Vjt 3 = 0.90V (Typ.) : trr= 1.6ns (Typ.)

Contextual Info: TOSHIBA 1SS309 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS3 09 ULTRA HIGH SPEED SWITCHING APPLICATIONS. U n it in mm +0.2 1 .8 -0.3 + 0.2 .6 • Sm a ll Package : SC-74A • Low Forw ard Voltage : V jr 3 = 0.90V (Typ.) • Fa st Reverse Recovery Tim e :

DAN802

Abstract: DAP803 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN803 DAP401
Contextual Info: - 1 74 nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ' *s y * y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m* iSÆismtÉ (WJAfc I Rmax fkñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)

1SS309

Contextual Info: 1SS309 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS309 Ultra High Speed Switching Applications Small package : SC-74A Low forward voltage : VF 3 = 0.90V (typ.) Unit: mm Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.)

644b

Abstract: 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401
Contextual Info: - 1 74 nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ' *s y * y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m* iSÆismtÉ (WJAfc I Rmax fkñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)

644b

Abstract: 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401
Contextual Info: - 174 - nï m fe aï Vpmax m* iS Æ ism tÉ WJAfc I Rmax fkñ (V I F <mA) ( ß A) V f (V) IR'JWl it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ') *s y * y -y y V r rm Vr (V) (V) (fliA) 80 80 300 300 85 85 35 35 35 Io ,If* I fm <°C) (nA) I fsm cc> (A) <°C)

DA-6NC

Abstract: PC802 628B 644b 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801
Contextual Info: 174 - - nï m it « s 1SS308 1SS309 D A -3 N D A -3 P D A -4 N * * ' *s y y -y y D A -4 P D A -6 N C D A -6 P C D A -8 N D A -8 P * * * * * y y y •) ') DAN401 D AN 403 DAN 601 DAN 801 D AN 802 n n a D n — — — — — V y Vr V ) (V ) (fliA) 80 80

1ss309

Contextual Info: 1SS309 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS309 Ultra High Speed Switching Applications Unit in mm Small package : SC-74A Low forward voltage : VF 3 = 0.90V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.)

1SS309

Contextual Info: 1SS309 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS309 Ultra High Speed Switching Applications l Small package : SC-74A l Low forward voltage : VF 3 = 0.90V (typ.) Unit: mm l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.9pF (typ.)

1SS309

Contextual Info: 1SS309 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS309 Ultra High Speed Switching Applications z Small package : SC-74A z Low forward voltage : VF 3 = 0.90V (typ.) Unit: mm z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.9pF (typ.)

1S1585

Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
Contextual Info: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80