irf 44 n
Abstract: No abstract text available
Text: GA150TD120U Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. See fig. 17 For screws M5x0.8 Pulse width 80µs; single shot. Case Outline — DOUBLE INT-A-PAK Dimensions are shown in millimeters inches WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
|
Original
|
PDF
|
GA150TD120U
irf 44 n
|
Untitled
Abstract: No abstract text available
Text: 8 7 6 5 10.00 [0.394] F M5x0.8 - 6H 4 3 2 1 2 X n5.10 [0.201] F DRILLING SCHEMATIC n37.00 E [1.457] E 10.00 [0.394] 5.00 [0.197] n5.00 BLACK ANODIZED ALUMINUM EXTRUSION SOLD SEPARATELY IN 1 METER LENGHTS PART # M3265-1003 [0.197] D 10.00 [0.394] D INNER VIEW
|
Original
|
PDF
|
M3265-1003
M3783-7001
|
m5x0.8
Abstract: m5x0.8 DIMENSIONS GA100TS120U
Text: GA100TS120U Notes: ➀ Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ➁ See fig. 17 ➂ For screws M5x0.8 ➃ Pulse width 50µs; single shot. Case Outline — INT-A-PAK Dimensions are shown in millimeters inches WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
|
Original
|
PDF
|
GA100TS120U
m5x0.8
m5x0.8 DIMENSIONS
GA100TS120U
|
M268-4
Abstract: No abstract text available
Text: 8 7 6 5 4 3 2 1 F F 193.81 [7.630] E E 40.00 [1.575] 32.00 [1.260] D D 168.00 [6.614] TYPICAL HANDLE ASSEMBLY C C 181.00 [7.126] M268-4 B 12.00 [0.472] M5x0.8 - 6H x 15.00 [0.561] Handle Material - Aluminum Finish - Clear Matte Anodized Aluminum Hardware 2 Screws - Cheesehead Slotted M5 x 12
|
Original
|
PDF
|
M268-4
M268-4
|
packard 15300027
Abstract: 535-42AR16-253 526-31AN07-202 590-31AB10-103 ntc 1,0 0914 526-31AN25-402 535-59DV26-303 009035-1-EN 597-32BM07-104 512-32AC05-204
Text: 500 Series Packaged Temperature Probes DESCRIPTION The 500 Series is available in a wide variety of housing styles The 500 Series is broad portfolio of air/gas, liquid and surface and materials, R-T Resistance-Temperature curves, temperature probes that use Honeywell's NTC (Negative
|
Original
|
PDF
|
009035-1-EN
packard 15300027
535-42AR16-253
526-31AN07-202
590-31AB10-103
ntc 1,0 0914
526-31AN25-402
535-59DV26-303
597-32BM07-104
512-32AC05-204
|
GA300TD60U
Abstract: No abstract text available
Text: PD -50057D GA300TD60U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses
|
Original
|
PDF
|
-50057D
GA300TD60U
GA300TD60U
|
GA400TD60U
Abstract: No abstract text available
Text: PD - 50059C GA400TD60U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses
|
Original
|
PDF
|
50059C
GA400TD60U
GA400TD60U
|
D155
Abstract: B096 B115 C115 C130 C155 D115 D130 E157 77130
Text: Aluminum Electrolytic Capacitors MEQ Features ‧Endurance with ripple current: 85℃, 20,000 hours ‧RoHS Compliance Sleeve & Marking Color: Black & Golden SPECIFICATIONS Items Performance -40℃ ~ +85℃ Category Temperature Range at 120Hz, 20℃ ±20%
|
Original
|
PDF
|
120Hz,
120Hz)
D155
B096
B115
C115
C130
C155
D115
D130
E157
77130
|
GA100TS120UPBF
Abstract: No abstract text available
Text: Preliminary Data Sheet I27243 12/06 GA100TS120UPbF "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
|
Original
|
PDF
|
I27243
GA100TS120UPbF
GA100TS120UPBF
|
THREAD ROD
Abstract: No abstract text available
Text: LIPS P114 SUBMERSIBLE STAND-ALONE LINEAR POSITION SENSOR Position feedback for industrial and scientific applications • • • • • • Non-contacting inductive technology to eliminate wear Travel set to customer’s requirement Compact and self-contained
|
Original
|
PDF
|
10Bar
10Bar
THREAD ROD
|
pg9 gland
Abstract: P113 rvdt sensor linear displacement sensor specification
Text: LIPS P113 SLIM-LINE LINEAR POSITION SENSOR Position feedback for industrial and scientific applications • • • • • Non-contacting inductive technology to eliminate wear Travel set to customer’s requirement Compact 19 mm diameter body, durable and reliable
|
Original
|
PDF
|
|
Endevco 8510B
Abstract: 8510B-1 Endevco 106 ENDEVCO CONDITIONER 106 rtv 174 oasis 202E Endevco 10-32 Unf 2A thd
Text: Piezoresistive Microphone ENDEVCO Model 8510B-1 and -2 MODEL 8510B-1 -2 • High Intensity • Rugged, Miniature • 300 mV Full Scale DESCRIPTION The ENDEVCO Model 8510B is a miniature piezoresistive pressure transducer used for measuring high intensity sound.This transducer employs a
|
Original
|
PDF
|
8510B-1
8510B-1
8510B
Endevco 8510B
Endevco 106
ENDEVCO CONDITIONER 106
rtv 174
oasis
202E
Endevco
10-32 Unf 2A thd
|
ERWG451LGC472MEB5M
Abstract: ERWG401LGC103MEH0M ERWG451LGC123MFK0M ERWG451LGC103MFF5M 50115 ERWG401LGC222MCA5M ERWG401LGC562MEB5M ERWG401LGC822MEF5M ERWG451LGC392MDD0M ERWG451LGC682MEF5M
Text: 大型铝电解电容器 小型化 系列 螺丝端子型・变频器用（85℃） 纹波 负荷 高纹波 RoHS指令 适应品 ＲＷＧ ● RWF系列的小型化・高纹波化品。 小型化 高纹波化 ● RWF系列额定纹波 300Hz 提高20%品。
|
Original
|
PDF
|
300Hz)
CE331
C1001K
Arms/85
120Hz
300Hz
ERWG401LGC682MDK0M
ERWG401LGC682MED0M
ERWG401LGC822MEF5M
ERWG401LGC103MEH0M
ERWG451LGC472MEB5M
ERWG401LGC103MEH0M
ERWG451LGC123MFK0M
ERWG451LGC103MFF5M
50115
ERWG401LGC222MCA5M
ERWG401LGC562MEB5M
ERWG401LGC822MEF5M
ERWG451LGC392MDD0M
ERWG451LGC682MEF5M
|
ERWE401LGC103MFF5M
Abstract: erwe401lgc272md96m ERWE351LGC222MC96M ERWE451LGC332MDD0M ERWE501LGC392MFF5M ERWE451LGC822MFF5M ERWE351LGC152MC75M ERWE351LGC332MD96M ERWE351LGB122MAC0M ERWE501LGC222MEB5M
Text: 大型铝电解电容器 小型化 系列 螺丝端子型・变频器用（85℃） RoHS指令 适应品 纹波 负荷 高耐压 ＲＷＦ 长寿命化 ● 额定电压 550Vdc 以下的系列。 ● 保证 85℃ 2,000 小时。 ＲＷＥ ◆规格表 项 目
|
Original
|
PDF
|
550Vdc
CE331
C1001K
RWE451LGC562MEF5M
ERWE451LGC822MFF5M
ERWE501LGB121MA50M
ERWE501LGB271MA80M
ERWE501LGB331MAA0M
ERWE501LGB391MAC0M
ERWE501LGC471MC75M
ERWE401LGC103MFF5M
erwe401lgc272md96m
ERWE351LGC222MC96M
ERWE451LGC332MDD0M
ERWE501LGC392MFF5M
ERWE451LGC822MFF5M
ERWE351LGC152MC75M
ERWE351LGC332MD96M
ERWE351LGB122MAC0M
ERWE501LGC222MEB5M
|
|
|
A12C
Abstract: No abstract text available
Text: LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS KMH • Endurance wnh npple current : S5°C 2000 hours 105« ♦SPECIFICATIONS Ite m s C h a ra c te ris tic s Category Temperature Range -4 0 to + 8 5 ^ 10 to 10 0 V * Rated Voltage Range Capacitance Tolerance
|
OCR Scan
|
PDF
|
250Vdc
120Hz)
120Hz
A12C
|
NIPPON CAPACITORS
Abstract: No abstract text available
Text: LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS RWY VHign nppie capaomty low price v is io n •Endurance with ripple current: 85°C 5000 hours •W id e variety case sizes from <f>50 to <¿100 longer life ♦ s p e c if ic a t io n s Items •■ ■ Category
|
OCR Scan
|
PDF
|
450Vdc
-25Xyc(
120Hz)
NIPPON CAPACITORS
|
Untitled
Abstract: No abstract text available
Text: International I«R Rectifier PD -5.055A PRELIMINARY "HALF-BRIDGE” IGBT INT-A-PAK G A 100 T S 6 0 U Ultra-Fast Speed IGBT Features V qes — 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
|
OCR Scan
|
PDF
|
|
ga200ts60u
Abstract: No abstract text available
Text: International USSR Rectifier p re lim in a ry "HALF-BRIDGE" IGBT INT-A-PAK PD'5058 G A 200TS60U Ultra-Fast Speed IGBT Features V qes = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
|
OCR Scan
|
PDF
|
200TS60U
ga200ts60u
|
IRF 860
Abstract: 5056B IRF 150a
Text: , I ,• In ternational I I«R Rectifier PD -5.056B preliminary "HALF-BRIDGE" IGBT INT-A-PAK G A 150TS6 0 U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V ces = 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
|
OCR Scan
|
PDF
|
150TS6
IRF 860
5056B
IRF 150a
|
Untitled
Abstract: No abstract text available
Text: I , ,• I In te rn a tio n a l IQ R R ectifier PD -5.05S preliminary "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK G A400TD 60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V ces • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
|
OCR Scan
|
PDF
|
A400TD
|
Untitled
Abstract: No abstract text available
Text: International IOR Rectifie f PD - 5.048B PRELIMINARY "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK GA500TD60U Ultra-Fast Speed IGBT Features V ce s = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
|
OCR Scan
|
PDF
|
GA500TD60U
1000S
|
Untitled
Abstract: No abstract text available
Text: In te r n a tio n a l IQ R R e c tifie r p d p re lim in a ry - s .o bza G A 1 5 0 T D 1 2 0 U "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Fe at ur es V • G en eratio n 4 IG BT te ch n o lo g y • S tan dard : O p tim ize d for m inim um saturation
|
OCR Scan
|
PDF
|
10kHz
|
Untitled
Abstract: No abstract text available
Text: International I R Rectifi G f PD - 5.059B P R E LIM IN A R Y "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK GA400TD60U Ultra-Fast Speed IGBT Features V c e s = 6 00 V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz In hard switching, >200
|
OCR Scan
|
PDF
|
GA400TD60U
|
Untitled
Abstract: No abstract text available
Text: International lORRectifi G f PD - 5.047B PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA250TS60U Ultra-Fast Speed IGBT Features V ces = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz In hard switching, >200
|
OCR Scan
|
PDF
|
GA250TS60U
|
