E78996 datasheet bridge
Abstract: E78996 bridge Igbt high voltage low current DC265A GA200TS60UPBF
Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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GA200TS60UPbF
E78996
2002/95/EC
18-Jul-08
E78996 datasheet bridge
E78996 bridge
Igbt high voltage low current
DC265A
GA200TS60UPBF
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GA200TS60U
Abstract: No abstract text available
Text: PD -5.058 PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA200TS60U Ultra-FastTM Speed IGBT Features VCES = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses
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GA200TS60U
GA200TS60U
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Untitled
Abstract: No abstract text available
Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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GA200TS60UPbF
E78996
2002/95/EC
11-Mar-11
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IGBT 1000V .200A
Abstract: irf 100v 200A Diode 15b RG2 DIODE Diode IR 1254 GA200TS60UX
Text: Bulletin I27221 03/06 GA200TS60UX "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses
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I27221
GA200TS60UX
IGBT 1000V .200A
irf 100v 200A
Diode 15b
RG2 DIODE
Diode IR 1254
GA200TS60UX
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Untitled
Abstract: No abstract text available
Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 to 40 kHz in hard switching, > 200 kHz in resonant mode RoHS COMPLIANT • Very low conduction and switching losses
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GA200TS60UPbF
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode
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GA200TS60UPbF
12-Mar-07
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Diode IR 1254
Abstract: GA200TS60U
Text: PD -5.058B PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA200TS60U Ultra-FastTM Speed IGBT Features VCES = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses
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GA200TS60U
Diode IR 1254
GA200TS60U
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Untitled
Abstract: No abstract text available
Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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GA200TS60UPbF
E78996
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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ge 142
Abstract: GA200TS60U
Text: PD -50058D GA200TS60U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses
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-50058D
GA200TS60U
ge 142
GA200TS60U
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GA200TS60UX
Abstract: IGBT 100V 200A
Text: Bulletin I27221 03/06 GA200TS60UX "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses
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I27221
GA200TS60UX
12-Mar-07
GA200TS60UX
IGBT 100V 200A
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Untitled
Abstract: No abstract text available
Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode
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GA200TS60UPbF
12-Mar-07
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200A25
Abstract: No abstract text available
Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 to 40 kHz in hard switching, > 200 kHz in resonant mode RoHS COMPLIANT • Very low conduction and switching losses
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GA200TS60UPbF
18-Jul-08
200A25
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Diode IR 1254
Abstract: GA200TS60U
Text: PD -50058C GA200TS60U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses
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-50058C
GA200TS60U
TJ52-7105
Diode IR 1254
GA200TS60U
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Untitled
Abstract: No abstract text available
Text: Bulletin I27221 03/06 GA200TS60UX "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses
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I27221
GA200TS60UX
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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GA200TS60UPbF
E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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300C
Abstract: GA200TS60U IRG4CC81UB
Text: PD- 91773 IRG4CC81UB IRG4CC81UB IGBT Die in Wafer Form C 600 V Size 8.1 Ultra-Fast Speed 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage
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IRG4CC81UB
IRG4CC81UB
GA200TS60U
300C
GA200TS60U
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IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK
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100MT160PAPBF
100MT160PA
100MT160PBPBF
IRU1239SC
iru1239
Full-bridge IR2110
Class-D ir2010
PWM IR2112 IRF540
ir21065
full bridge ir2110
h-bridge irfz44n
IRVCM10A
600V 300A igbt dc to dc boost converter
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HEXFET
Abstract: GA200TD120U GA500TD60U GA100TS60U
Text: International Rectifier COLOR CODING: EXISTING Products The Switch Module Navigator NEW Products released to production in last 69 months UPCOMING Products to be released within next 3-4 months POTENTIAL Products no current plans. see bus.mgmt. Effective 14 June, 1999
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OT-227
GA600GD25S
GA125TS120U
GA100TS120U
GA75TS120U
GA50TS120U
GA250TS60U
GA200TS60U
GA150TS60U
GA100TS60U
HEXFET
GA200TD120U
GA500TD60U
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IRG41BC20W
Abstract: IRG41BC20UD Drive circuit for IGBT using IR2130 IR2184 application notes IR2110 driver CIRCUIT FOR INVERTERS DC MOTOR SPEED CONTROL USING IGBT IRG41BC30W IR2181 application notes IR2103 bldc driver 1KW dc motor
Text: TABLE OF CONTENTS Selection Guides Fast Diode Die Data Sheets FRED Die Data Sheets HEXFET Power MOSFET Die Data Sheets HEXFRED® Rectifier Die Data Sheets IC Data Sheets IGBT Die Data Sheets IGBT Modules for Motor Drive & UPS IGBT Modules for Motor Drives in Industrial Electric Vehicles
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O-220
IR2130
230VAC
IR2133
460VAC
IR2233
IR2137/IR2171
IRG41BC20W
IRG41BC20UD
Drive circuit for IGBT using IR2130
IR2184 application notes
IR2110 driver CIRCUIT FOR INVERTERS
DC MOTOR SPEED CONTROL USING IGBT
IRG41BC30W
IR2181 application notes
IR2103 bldc driver
1KW dc motor
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IC 50061
Abstract: FA57SA50LC 50071 GA400TD25S FB180SA10 GA600GD25S CHOPPER GA200TD120U GA200SA60U GA200NS61U
Text: International Rectifier COLOR CODING: EXISTING Products The Switch Module Navigator NEW Products released to production in last 69 months UPCOMING Products to be released within next 3-4 months POTENTIAL Products no current plans. see bus.mgmt. Effective 22 July, 1998
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OT-227
GA600GD25S
GA400TD25S
GA500TD60U
GA400TD60U
A75TS60U
GA250TD120U
GA200TD120U
GA150TD120U
GA125TS120U
IC 50061
FA57SA50LC
50071
GA400TD25S
FB180SA10
GA600GD25S
CHOPPER
GA200TD120U
GA200SA60U
GA200NS61U
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IRG4BC20UD
Abstract: CPV362M4F irg4ph50ud GA400TD25S IRG4PC50 CPV362M4U
Text: IGBTs www.irf.com V CES Collector-to-Emitter Voltage V Part Number Max. V CE(on) Collector-to-Emitter Voltage (V) IC Continuous Collector Current T C =25°C TC =25°C (A) (A) PD Max. Power Dissipation (W) Fax on Demand Number Case Outline Key Discrete High Efficiency WARP(tm) Speed
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75-150kHz
O-220AB
IRG4BC20W
IRG4BC30W
IRG4BC40W
O-247AC
IRG4PC30W
IRG4PC40W
IRG4PC50W
IRG4BC20UD
CPV362M4F
irg4ph50ud
GA400TD25S
IRG4PC50
CPV362M4U
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IRFBE30 equivalent
Abstract: irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540
Text: Electronic Switches Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566
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May-97
Sep-95
Sep-94
IRFBE30 equivalent
irf9640 REPLACEMENT GUIDE
IRGKI200F06
IRGP440U replacement
IRF3205 smd
IRGBC20FD2
IRFK3D450
IRFBg30 equivalent
IRGNIN150M06
irc540
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ga200ts60u
Abstract: No abstract text available
Text: International USSR Rectifier p re lim in a ry "HALF-BRIDGE" IGBT INT-A-PAK PD'5058 G A 200TS60U Ultra-Fast Speed IGBT Features V qes = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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200TS60U
ga200ts60u
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Untitled
Abstract: No abstract text available
Text: International I , i • I M R Rectifier PD -5.058B p r e l im in a r y "HALF-BRIDGE" IGBT INT-A-PAK GA 200 T S 60 U Ultra-Fast Speed IGBT Feat ures V ces = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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