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    1SV25 Search Results

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    1SV25 Price and Stock

    Rochester Electronics LLC 1SV251-TB-E

    PIN DIODE
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    DigiKey 1SV251-TB-E Bulk 2,472
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    onsemi 1SV251-TB-E

    RF DIODE PIN 50V 150MW 3CP
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    Avnet Americas 1SV251-TB-E Reel 0 Weeks, 2 Days 6,850
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    Rochester Electronics 1SV251-TB-E 83,950 1
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    Flip Electronics 1SV251-TB-E 36,000
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    Flip Electronics 1SV251-TB-E

    RF DIODE PIN 50V 150MW 3CP
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    DigiKey 1SV251-TB-E Bulk 5,000
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    Rochester Electronics LLC 1SV250-TB-E

    PIN DIODE
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    DigiKey 1SV250-TB-E Bulk 2,664
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    Techflex Inc CXN0.31SV250

    EXPAND SLEEVE 0.312"X250' SILV
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    DigiKey CXN0.31SV250 1
    • 1 $91.96
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    1SV25 Datasheets (38)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SV25 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SV250 Kexin VHF UHF AGC Applications Original PDF
    1SV250 Sanyo Semiconductor Single Original PDF
    1SV250 TY Semiconductor VHF UHF AGC Applications - SOT-23 Original PDF
    1SV250 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SV250 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    1SV250-TB-E SANYO Electric RF Diodes, Discrete Semiconductor Products, DIODE PIN 50V 50MA 3CP Original PDF
    1SV251 Kexin VHF UHF AGC Applications Original PDF
    1SV251 Sanyo Semiconductor PIN Diode for VHF, UHF, AGC Applications Original PDF
    1SV251 TY Semiconductor VHF UHF AGC Applications - SOT-23 Original PDF
    1SV251 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SV251 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    1SV251-TB-E On Semiconductor 1SV251 - PIN Diode 50V 50mA C;230mpF(typ.) Duale CP Original PDF
    1SV251-TB-E SANYO Electric RF Diodes, Discrete Semiconductor Products, DIODE PIN 50V 50MA 3CP Original PDF
    1SV252 Kexin VHF UHF Band RF Attenuator Applications Original PDF
    1SV252 Toshiba Diode - Silicon Epitaxial Pin Type Original PDF
    1SV252 TY Semiconductor VHF UHF Band RF Attenuator Applications - SOT-323 Original PDF
    1SV252 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SV252 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    1SV252 Toshiba Diode Silicon Epitaxial PIN Type Scan PDF

    1SV25 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SV250 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Small interterminal capacitance C=0.23pF typ . 2 +0.1 0.95-0.1 +0.1 1.9-0.1 max). +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Small forward series resistance (rs=4.5


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    1SV250 OT-23 1SV250-applied 100MHZ PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN4403B 1SV251 PIN Diode http://onsemi.com Dual series PIN Diode for VHF, UHF and AGC 50V, 50mA, rs=max 4.5Ω, CP Features • • • Small-sized package facilitates high-density mounting and permits 1SV251-applied equipment to be made smaller


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    EN4403B 1SV251 1SV251-applied PDF

    diode bridge toshiba

    Abstract: 1SV252
    Text: 1SV252 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV252 VHF~UHF Band RF Attenuator Applications Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse voltage VR 50 V Forward current IF 50 mA Junction temperature Tj 125 °C Tstg -55~125


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    1SV252 SC-70 diode bridge toshiba 1SV252 PDF

    smd rf transistor marking

    Abstract: 1SV252 transistor marking smd MARKING BE marking BY marking RF marking RF 98 smd marking rs smd symbols
    Text: Diodes SMD Type VHF~UHF Band RF Attenuator Applications 1SV252 Features Absolute M axim um Ratings Ta = 25 Param eter Reverse voltage Sym bol Rating Unit VR 50 V mA Forward current IF 50 Junction Tem perature Tj 125 T stg -55 to +125 Storage tem perature Electrical Characteristics Ta = 25


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    1SV252 smd rf transistor marking 1SV252 transistor marking smd MARKING BE marking BY marking RF marking RF 98 smd marking rs smd symbols PDF

    marking fv

    Abstract: 100MHZ 1SV250
    Text: Diodes SMD Type PIN Diode for VHF, UHF, AGC Applications 1SV250 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Small interterminal capacitance C=0.23pF typ . 2 +0.1 0.95-0.1 +0.1 1.9-0.1 max). +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Small forward series resistance (rs=4.5


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    1SV250 OT-23 1SV250-applied 100MHZ marking fv 100MHZ 1SV250 PDF

    N4403A

    Abstract: 1SV251
    Text: 注文コード No. N 4 4 0 3 A 1SV251 No. N4403A N3099 半導体ニューズ No.4403 とさしかえてください。 1SV251 特長 シリコンエピタキシァル形 VHF・UHF・AGC 用 PIN ダイオード ・小型外形のため高密度実装および小形設計が可能である。


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    1SV251 N4403A N3099 100MHz ID00062 ID00063 ID00064 ID00065 N4403A 1SV251 PDF

    TOSHIBA Semiconductor Reliability Handbook derating concept and method

    Abstract: 1SV252
    Text: 1SV252 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV252 VHF~UHF Band RF Attenuator Applications Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse voltage VR 50 V Forward current IF 50 mA Junction temperature Tj 125 °C


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    1SV252 TOSHIBA Semiconductor Reliability Handbook derating concept and method 1SV252 PDF

    1SV251

    Abstract: EN4403A
    Text: Ordering number :EN4403A 1SV251 Silicon Epitaxial Type PIN Diode for VHF, UHF, AGC Applications Features Package Dimensions • Small-sized package facilitates high-density mounting and permits 1SV251-applied equipment to be made smaller. · Small interterminal capacitance C=0.23pF typ .


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    EN4403A 1SV251 1SV251-applied 1SV251] 12such 1SV251 EN4403A PDF

    1SV257

    Abstract: C10V toshiba small signal diode
    Text: TOSHIBA Discrete Semiconductors 1SV257 Variable Capacitance Diode Unit in mm Silicon Epitaxial Planar Type VCO For UHF Ratio Features • Ultra Low Series Resistance : rs = 0.2Ω Typ. • Useful for Small Size Set Absolute Maximum Ratings (Ta = 25°C) CHARACTERISTIC


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    1SV257 1SV257 C10V toshiba small signal diode PDF

    DIODE MARKING GV

    Abstract: smd marking gv 100MHZ 1SV251 smd diode gv
    Text: Diodes SMD Type PIN Diode for VHF, UHF, AGC Applications 1SV251 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Small interterminal capacitance C=0.23pF typ . 2 +0.1 0.95-0.1 +0.1 1.9-0.1 max). +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Small forward series resistance (rs=4.5


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    1SV251 OT-23 1SV251-applied 100MHZ DIODE MARKING GV smd marking gv 100MHZ 1SV251 smd diode gv PDF

    1SV252

    Abstract: No abstract text available
    Text: 1SV252 東芝ダイオード シリコンエピタキシャルPIN形 1SV252 ○ VHF・UHF バンド減衰器用AGC 用 • 単位: mm 超小型パッケージ • 低容量 • 直列抵抗が小さい。 : rs = 3.5 Ω : CT = 0.2 pF 標準 絶対最大定格 (Ta = 25°C)


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    1SV252 1SV252 PDF

    1SV252

    Abstract: No abstract text available
    Text: 1SV252 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV252 VHF~UHF Band RF Attenuator Applications Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse voltage VR 50 V Forward current IF 50 mA Junction temperature Tj 125 °C


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    1SV252 1SV252 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SV252 Features Absolute M axim um Ratings Ta = 25 Param eter Reverse voltage Sym bol Rating Unit VR 50 V mA Forward current IF 50 Junction Tem perature Tj 125 T stg -55 to +125 Storage tem perature Electrical Characteristics Ta = 25


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    1SV252 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SV252 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV252 VHF~UHF Band RF Attenuator Applications Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse voltage VR 50 V Forward current IF 50 mA Junction temperature Tj 125 °C Tstg -55~125


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    1SV252 SC-70 PDF

    S3015A

    Abstract: 1SV11 1SV25 1SV45 MS7101 MS7102 MS7111 MS7112 S3015B S3046
    Text: 1 78 - & m % tt £ Vr r h V 1S 18 5 5 1S 18 5 6 1S1857 lSVll 1SV25 1SV45 M S7101 M S 7102 MS7111 MS 7 1 1 2 S30 1 5 A S30 1 5 B $3046 $3053 SV 14B SV14C SV24A S V 24B S V 36C am H E B B n mz Bn 25 25 20 Vr * IFM (V) (mA) 25 25 20 70 30 450 450 300 fë


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    1SV11 1SV25 1SV45 MS7101 MS7102 MS7111 MS7112 sc-11 -28UNF-2ATÂ i042U S3015A S3015B S3046 PDF

    S3015A

    Abstract: MS7101 TI 7A 1SV11 1SV25 1SV45 MS7102 MS7111 MS7112 S3015B
    Text: 1 78 - & m % tt £ Vr r h V 1S 18 5 5 1S 18 5 6 1S1857 lSVll 1SV25 1SV45 M S7101 M S 7102 MS7111 MS 7 1 1 2 S30 1 5 A S30 1 5 B $3046 $3053 SV 14B SV14C SV24A S V 24B S V 36C am H E B B n mz Bn 25 25 20 Vr * IFM (V) (mA) 25 25 20 70 30 450 450 300 fë


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    1SV11 1SV25 1SV45 MS7101 MS7102 MS7111 MS7112 S3015A S3015B S3046 TI 7A PDF

    S3015A

    Abstract: ss 211 1SV11 1SV25 1SV45 MS7101 MS7102 MS7111 MS7112 S3015B
    Text: 178 - & m % tt £ Vr r h V 1S 18 5 5 1S 18 5 6 1S1857 lSVll 1SV25 1SV45 M S7101 M S 7102 MS7111 MS 7 1 1 2 S30 1 5 A S30 1 5 B $3046 $3053 SV 14B SV14C SV24A S V 24B S V 36C am H E B B n mz Bn 25 25 20 Vr * IFM (V) (mA) 25 25 20 70 30 450 450 300 fë


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    1SV11 1SV25 1SV45 MS7101 MS7102 MS7111 MS7112 S3015A S3015B S3046 ss 211 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SV252 T O SH IB A TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1 SV2 52 Unit in mm VHF-UHF BAND RF ATTENUATOR APPLICATIONS. 2.1 ± 0.1 1.25Í0.1 oo + » -ES 2 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range


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    1SV252 SC-70 PDF

    SV153A

    Abstract: Sv153 varicap diode 2SC491 1SV226 Am tuning varicap 1SS242 1SV211 4007F S1B66
    Text: 3. BLOCK DIAGRAM OF RECOMMENDED PRODUCTS 3.1 RF DISCRETE DEVICES FOR AM TUNER Bi'Transistor PIN Diode Single TO-92 SM 1 SV 9 9 Double use SM Q SM TO-92 USM 1SV128 1SV271 1SV172 1S V 2 3 7 1SV252 MINI SM 2 SC 3 8 0 T M 2 SC 26 6 9 2SC2715 2 SC 94 1 T M 2SC2670


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    2SC2670 2SC2715 2SC2716 1SV128 1SV271 1SV172 1SV252 1SV102 SV149 2V02H SV153A Sv153 varicap diode 2SC491 1SV226 Am tuning varicap 1SS242 1SV211 4007F S1B66 PDF

    1SV254

    Abstract: D208
    Text: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV254 TV T U N IN G . • H igh C apacitance R atio : C 2V /C 25V = 6.5 Typ. • Low Series R esistance : r s = 0.4ii (Typ.) • E xcellent C-V C h aracteristics, an d Sm all T rack in g E rror. •


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    1SV254 10kS2) 1SV254 D208 PDF

    1SV258

    Abstract: No abstract text available
    Text: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV258 C A T V CONVERTER 1st OSC T U N IN G . • • • High Capacitance Ratio : C2V/C20V = 8 Typ. Low Series Resistance : rs = 0.73U (Typ.) Useful for Small Size Tuner. M A X IM U M R ATINGS (Ta = 25°C)


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    1SV258 C2V/C20V C2V/C20V 1SV258 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN4 4 0 3 1SV251 No.4403 Silicon Epitaxial Type PIN Diode for VHF, UHF, AGC Applications SAifYO i F eatu res •Small-sized package facilitates high-density mounting and permits lSV251-applied equipment to be made smaller. ■Small interterm inal capacitance C = 0.23pF typ .


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    1SV251 lSV251-applied 100MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON EPITAXIAL PIN TYPE 1SV252 U nit in mm V H F — UHF B A N D RF A TTEN U A TO R APPLICATIONS. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range SYMBOL Vr If Tj Tstg RATING


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    1SV252 100MHz PDF

    1sv257

    Abstract: No abstract text available
    Text: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV257 VCO FOR UHF BAND RADIO • Ultra Low Series Resistance : rs = 0.2il Typ. • Useful for Small Size Set MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Reverse Voltage VR Junction Temperature


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    1SV257 C2V/C10V 470MHz 1sv257 PDF