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    1SV291 Price and Stock

    Toshiba America Electronic Components 1SV291(TPH3,F)

    Diode VAR Cap Single 35V 4.2pF 2-Pin ESC T/R
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    Chip1Stop 1SV291(TPH3,F) 3,550
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    1SV291 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    1SV291 Toshiba 1SV291 - DIODE UHF-KA BAND, 4.95 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, 1-1G1A, 2 PIN, Variable Capacitance Diode Original PDF
    1SV291 Toshiba variable capacitance diode Original PDF
    1SV291 Toshiba DIODE VAR CAP SINGLE 30V 4.2PF 2(1-1G1A) Scan PDF
    1SV291 Toshiba Variable Capacitance Diode Silicon Epitaxial Planer Type Scan PDF
    1SV291 Toshiba Variable capacitance silicon diode for UHF SHF tuning Scan PDF
    1SV291TH3FT Toshiba 1SV291TH3FT - Diode VAR Cap Single 30V 4.2pF 2-Pin ESC T/R Original PDF
    1SV291(TPH2) Toshiba DIODE VAR CAP SINGLE 30V 4.2PF 2(1-1G1A) T/R Scan PDF
    1SV291(TPL2) Toshiba DIODE VAR CAP SINGLE 30V 4.2PF 2(1-1G1A) T/R Scan PDF

    1SV291 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1SV291 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV291 UHF SHF Tuning Unit: mm • High capacitance ratio: C2 V/C25 V = 7.6 typ. • Low series resistance: rs = 1.9 Ω (typ.) • Excellent C-V characteristics, and small tracking error.


    Original     		PDF 1SV291

    1SV291

    Abstract: No abstract text available
    Text: 1SV291 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV291 UHF SHF Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 7.6 typ. • Low series resistance: rs = 1.9 Ω (typ.) • Excellent C-V characteristics, and small tracking error.


    Original     		PDF 1SV291 1SV291

    Untitled

    Abstract: No abstract text available
    Text: 1SV291 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV291 UHF SHF Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 7.6 typ. · Low series resistance: rs = 1.9 Ω (typ.) · Excellent C-V characteristics, and small tracking error.


    Original     		PDF 1SV291

    1SV291

    Abstract: 1sv291 spice
    Text: 20010925 1SV291 SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) FREQUENCY RANGE: f = 0.1 GHz~3 GHz REVERSE VOLTAGE RANGE: VR = 1V ∼ 25 V AMBIENT TEMPERATURE:


    Original     		PDF 1SV291 27deg 01E-13 00E-06 17E-11 00E-10 1sv291 spice

    1SV291

    Abstract: No abstract text available
    Text: 1SV291 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV291 UHF SHF Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 7.6 typ. · Low series resistance: rs = 1.9 Ω (typ.) · Excellent C-V characteristics, and small tracking error.


    Original     		PDF 1SV291 1SV291

    DIODE marking S4 59A

    Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
    Text: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3


    Original     		PDF REJ16G0002-2200 DIODE marking S4 59A DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323

    XM0830SJ

    Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
    Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563

    BGT24MTR11

    Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
    Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586

    TOSHIBA RF Power Module S-AV24

    Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
    Text: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 TOSHIBA RF Power Module S-AV24 diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192

    3SK73

    Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
    Text: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 3SK73 S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112

    2fu smd transistor

    Abstract: 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 256 Zener Diodes z 257 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG02 O-220SM CRG01 CRG04 CMG03 2fu smd transistor 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B

    2sc3052ef

    Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
    Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor

    BB 505 Varicap Diode

    Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
    Text: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent


    Original     		PDF 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H BB 505 Varicap Diode s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114

    FET K161

    Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
    Text: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or


    Original     		PDF 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H FET K161 S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR

    FET K161

    Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
    Text: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 FET K161 Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923

    2sc5088 horizontal transistors

    Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
    Text: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or


    Original     		PDF 3SK114 3SK126 S1255 2SC2644 2-AV24 3SK115 3SK291 S1256 2-AV26H 2sc5088 horizontal transistors S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509

    tb31224cf

    Abstract: transistor 2sk1603 TA8264AHQ TC94A58FAG TA7769P TA8275HQ 2SK1603 ta8266hq 2SK2056 S2Y52
    Text: 2005-2 PRODUCT GUIDE Semiconductor Product Guide 2005 Toshiba Electronics Malaysia Sdn. Bhd. Toshiba Semiconductor Thailand Co., Ltd. Toshiba Semiconductor (Wuxi) Co., Ltd. semiconductor http://www.semicon.toshiba.co.jp/eng Committed to people, Committed to the Future


    Original     		PDF SCE0007A tb31224cf transistor 2sk1603 TA8264AHQ TC94A58FAG TA7769P TA8275HQ 2SK1603 ta8266hq 2SK2056 S2Y52

    1SV291

    Abstract: C25V
    Text: 1SV291 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE UHF SHF TUNING SILICON EPITAXIAL PLANAR TYPE 1 S V2 9 1 Unit in mm • High Capacitance Ratio : C2 y /C 2 5 Y = 7.6 TYP. • Low Series Resistance : rs = 1.90 (TYP.) • Excellent C-V Characteristics, and Small Tracking Error.


    OCR Scan     		PDF 1SV291 C2y/C25V 0014g 1SV291 C25V

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 1SV291 TOSHIBA VARIABLE CAPACITANCE DIODE 1 SV291 UHF SHF TUNING • • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C2 v / C 2 5 V = 7-6 TYP. Low Series Resistance : rs = 1.9fl (TYP.) Excellent C-V Characteristics, and Small Tracking Error.


    OCR Scan     		PDF 1SV291 SV291 0014g

    1SV291

    Abstract: C25V
    Text: 1SV291 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV291 Unit in mm UHF SHF TUNING • High Capacitance Ratio : C2 V /C 2 5 V = 7.6 TYP. • Low Series Resistance : rs = 1.90 (TYP.) • Excellent C-V Characteristics, and Small Tracking Error.


    OCR Scan     		PDF 1SV291 C2V/C25V 0014g 1SV291 C25V

    1SV291

    Abstract: C25V
    Text: 1SV291 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE UHF SHF TUNING • • • • SILICON EPITAXIAL PLANAR TYPE 1 SV291 Unit in mm High Capacitance Ratio : C 2 V /C 2 5 V = 7.6 TYP. Low Series Resistance : rs = 1.90 (TYP.) Excellent C-V Characteristics, and Small Tracking Error.


    OCR Scan     		PDF 1SV291 C2y/C25V 0014g 1SV291 C25V

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SV291 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE UHF SHF TUNING U nit in mm • High Capacitance Ratio : C 2 y/C 2 5V = 7.6 TYP. • Low Series Resistance : r$= 1.9H (TYP.) • Excellent C-V Characteristics, and Small Tracking Error.


    OCR Scan     		PDF 1SV291 0014g

    FC54M

    Abstract: FC53M diode cross reference 1s1555 diode cross reference 1s2473 RLS135 "cross reference" 1SS1586 1SS211 sanken SE014 1SS2021 toshiba diode "do-41"
    Text: CROSS • — K - f -y _ REFERENCE S w itc h in g d io d e s Marker TOSHIBA NEC MATSUSHITA ROHM PMUPS HITACHI Factage 1SS172 1SS267 DO-41 1S1555, 1S1588 MA150 1S953 1S2472, 1S2473 1S2076 1S2787 1SS104 MA161 1S1553, 1S1554 1S2471,1SS41 1S2076A 1S2092, 1S2460


    OCR Scan     		PDF DO-41 1SS267 1S1555, 1S1588 1SS104 1S1553, 1S1554 1S2092, 1S2460 1S2461, FC54M FC53M diode cross reference 1s1555 diode cross reference 1s2473 RLS135 "cross reference" 1SS1586 1SS211 sanken SE014 1SS2021 toshiba diode "do-41"