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    1V17 Search Results

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    1V17 Price and Stock

    Eaton Bussmann

    Eaton Bussmann ECMT1V1717S-100-R

    CMC 10MH 1.2A 2LN TH
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    DigiKey ECMT1V1717S-100-R Tray 7,572 1
    • 1 $0.95
    • 10 $0.781
    • 100 $0.65475
    • 1000 $0.56775
    • 10000 $0.56775
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    Sager ECMT1V1717S-100-R 1,232
    • 1 -
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    • 10000 $1.32
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    Eaton Bussmann ECMT1V1717S-8R0-R

    CMC 8MH 800MA 2LN TH
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    DigiKey ECMT1V1717S-8R0-R Tray 2,601 1
    • 1 $1.33
    • 10 $1.094
    • 100 $0.91675
    • 1000 $0.82516
    • 10000 $0.82516
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    Sager ECMT1V1717S-8R0-R 1,232
    • 1 -
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    • 10000 $1.32
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    Eaton Bussmann ECMT1V1717S-1R0-R

    CMC 1MH 1A 2LN TH
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    DigiKey ECMT1V1717S-1R0-R Tray 2,597 1
    • 1 $1.44
    • 10 $1.186
    • 100 $0.9751
    • 1000 $0.90252
    • 10000 $0.90252
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    Sager ECMT1V1717S-1R0-R 1,232
    • 1 -
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    Eaton Bussmann ECMT1V1714H-1R0-R

    CMC 1MH 1A 2LN TH
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    DigiKey ECMT1V1714H-1R0-R Tray 2,407 1
    • 1 $1.72
    • 10 $1.412
    • 100 $1.18325
    • 1000 $1.02389
    • 10000 $0.8665
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    Eaton Bussmann ECMT1V1714H-8R0-R

    CMC 8MH 800MA 2LN TH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ECMT1V1714H-8R0-R Tray 1,356 1
    • 1 $1.57
    • 10 $1.223
    • 100 $0.9725
    • 1000 $0.80502
    • 10000 $0.64521
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    Sager ECMT1V1714H-8R0-R 1,056
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    • 10000 $1.12
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    Find more 1V17 price and stock on Findchips.com

    1V17 Datasheets (1)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    1V175 NTE Electronics Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 270 V Original PDF

    1V17 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    v17805

    Abstract: MSM51V17805BSL msm51v17805b
    Text: O K I Semiconductor MSM5 1V17805 B/BSL_ E 2 G 0 0 7 9 -1 7 -4 1 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The M SM 1V17805B/BSL is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The 1V17805B /B SL achieves high integration, high-speed operation, and


    OCR Scan     		E2G0079-17-41 MSM51V17805B/BSL_ 152-Word MSM51V17805B/BSL MSM51VI7805B 28-pin MSM51V17805BSL v17805 MSM51V17805BSL msm51v17805b PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5 1V17805 B/BSL_ E 2 G 0 0 7 9 -1 7 -4 1 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The M SM 1V17805B/BSL is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The 1V17805B /B SL achieves high integration, high-speed operation, and


    OCR Scan     		1V17805 152-Word 51V17805B/BSL MSM51V17805B 28-pin MSM51V17805BSL 152-w PDF

    1v17

    Abstract: No abstract text available
    Text: P U M A 2 U2 0 0 0 m o i a i c PUMA 2U2000-12/15/17/20 Issue 12 .: February 1990 ADVANCE PRODUCT INFORMATION Semiconductor Inc. Pin Definition 1.048.576 bit CMOS High Speed UV EPROM FMtures User Configurable as 8,16 or 32 bit wide. Very Fast access times of 120/150/170/200 ns.


    OCR Scan     		U2000- 1000mW 530mW 295mW BS9400 MIL-STD-883C. 2U2000MB-20 1v17 PDF

    TEA1030

    Abstract: T77-0-7 TEA1030B
    Text: S G S-THOriSON 7flc m H •JEW*] SEMICONDUCTORS » I □ □ d ^ i m I T-77-Ô7-/J TEA1030B TV V ID E O PROCESSING I.C FOR COLOR TV SET T V V ID E O PRO C ESSIN G Ï.C FOR COLOR TV SET T h e T E À 1 0 3 0 B ¡s a new video processor I.C com patible w ith all standards


    OCR Scan     		TEA1030B T-77-07-/3 T77-C7-/2 TEA1030 T77-0-7 TEA1030B PDF

    NTE74HC4067

    Abstract: NTE4097B NTE74HC299 NTE4017B NTE4007 NTE4023B NTE4027B NTE74HC4053 NTE4553B NTE74HC165
    Text: Semiconductors Integrated Circuits Integrated Circuits cont. Part Number Description NTE40175B IC-CMOS, Quad D-Type Flip-Flop NTE4017B IC-CMOS, Decade Counter w/10 Decoder Outputs NTE40182B IC-CMOS, Look Ahead Carry Generator Part Number Description NTE4018B


    Original     		NTE40175B NTE4017B NTE40182B NTE4018B NTE4001B NTE4019B NTE4001BT NTE40192B NTE4002B NTE40193B NTE74HC4067 NTE4097B NTE74HC299 NTE4017B NTE4007 NTE4023B NTE4027B NTE74HC4053 NTE4553B NTE74HC165 PDF

    101ZZ

    Abstract: m1s23 PDCR 900 TLCS-900 TMP94C241C TMP94C241CF M2S22 PDCR 940 MNS20 B5WR
    Text: TOSHIBA TMP94C241C CMOS 32-bit Microcontroller TMP94C241CF 1. O u t lin e an d Device Characteristics TMP94C241C is high-speed advanced 32-bit micro-controller developed for controlling equipment which processes mass data. TMP94C241C is a micro-controller which has a high-performance CPU 900/H2 CPU and various


    OCR Scan     		TMP94C241C 32-bit TMP94C241CF TMP94C241C 900/H2 160-pin 101ZZ m1s23 PDCR 900 TLCS-900 TMP94C241CF M2S22 PDCR 940 MNS20 B5WR PDF

    1V130

    Abstract: NTE1V095 2V130 1V025 NTE2V480 524V15 NTE524V13 524V13 1V150 NTE2V095
    Text: NTE1V010 thru NTE1V300 NTE2V010 thru NTEV480 NTE524V13 thru NTE524V48 Metal Oxide Varistors MOV Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby drain currents.


    Original     		NTE1V010 NTE1V300 NTE2V010 NTEV480 NTE524V13 NTE524V48 1V130 NTE1V095 2V130 1V025 NTE2V480 524V15 524V13 1V150 NTE2V095 PDF

    0s18

    Abstract: 100ZZ
    Text: TO SH IB A TMP94C251A CMOS 32-bit M icro con tro ller TMP94C251AF 1. Outline and Device Characteristics TMP94C251A is high-speed advanced 32-bit micro-controller developed for controlling equipm ent which processes m ass data. TMP94C251A is a micro-controller which has a high-performance CPU 900/H2 CPU and various


    OCR Scan     		32-bit TMP94C251A TMP94C251AF TMP94C251A 900/H2 144-pin 0s18 100ZZ PDF

    oz 9976

    Abstract: ojp 241 E112 FET E110 FET 11zs1 LHi 1128 lt 175 1111 E55 ferrite le24 G2L 113
    Text: MIL-M-38510/121A 4 June 1984 su p tR S tu n rG MIL-M-38510/121 2 F e b r u a r y 1982 military specification M I C R O C I R C U I T S , L I NEAR MONOLITHIC AND M U L TI CH I P , 12 B I T DI GI TAL - TO- ANAL OG CONVERTERS SILICON T h i s s p e c i f i c a t i o n is a p p r o v e d for use by all D e p a r t ­


    OCR Scan     		MIL-M-38510/121A MIL-M-38510/121 MIL-M-38510. MIL-M-38510 L-M-38510/121A 1984-705-040/A3492 oz 9976 ojp 241 E112 FET E110 FET 11zs1 LHi 1128 lt 175 1111 E55 ferrite le24 G2L 113 PDF

    524V13

    Abstract: NTE524V13 524V15 524V25 2V025 1V130 2V130 varistor 150f NTE1V095 2V020
    Text: NTE1V010 thru NTE1V300 NTE2V010 thru NTEV480 NTE524V13 thru NTE524V48 Metal Oxide Varistors MOV Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby drain currents.


    Original     		NTE1V010 NTE1V300 NTE2V010 NTEV480 NTE524V13 NTE524V48 524V13 524V15 524V25 2V025 1V130 2V130 varistor 150f NTE1V095 2V020 PDF

    Untitled

    Abstract: No abstract text available
    Text: D ESIG N E D FOR USE WITH 0 . 0 47 S E M I - R I G I D CABLE CABLE ENTRY DIAM ETER MINIMUM HOUSING REVISIONS DESCRIPTION REV DATE tk REVISED 01 2 APPROVED 7&C .050 JACK RECOMMENDED MOUNTING HOLE HOUSING MOUNTING NUT LOCKWASHER S T A I N L E S S S T E E L PER


    OCR Scan     		1V17/70 PDF

    1V130

    Abstract: 320/20 METAL OXIDE VARISTOR NTE1V095 NTE524V13 524V13 524V25 1V300 2V025 2V130 524V15
    Text: NTE1V010 thru NTE1V300 NTE2V010 thru NTEV480 NTE524V13 thru NTE524V48 Metal Oxide Varistors MOV Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby drain currents.


    Original     		NTE1V010 NTE1V300 NTE2V010 NTEV480 NTE524V13 NTE524V48 1V130 320/20 METAL OXIDE VARISTOR NTE1V095 524V13 524V25 1V300 2V025 2V130 524V15 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE1V010 thru NTE1V300 NTE2V010 thru NTEV480 NTE524V13 thru NTE524V48 Metal Oxide Varistors MOV Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby drain currents.


    Original     		NTE1V010 NTE1V300 NTE2V010 NTEV480 NTE524V13 NTE524V48 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA =10^7240 QQ 2ß 3 55 4b0 • 1V17800BNJS/BNTS60/70 PRELIMINARY 2,097,152 WORD X 8 BIT FAST PAGE DYNAMIC RAM Description The 1V17800BNTS/BNJS is the fast page dynamic RAM organized 2,097,152 words by 8 bits. The 1V17800BNTS/BNJS utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques


    OCR Scan     		TC51V17800BNJS/BNTS60/70 TC51V17800BNTS/BNJS PDF

    seven segment to BCD converter LM 7447 IC

    Abstract: PH ON 823 m 0233 trk 1203 lm 7085 circuit diagram yd 803 1005 Ic Data 022d px8 ap TMP92C820F sis 6326
    Text: Data Book 32bit Micro controller TLCS-900/H1 series TMP92C820F TENTATIVE Rev.1.4 05/Oct/2001 - Contents-1.Outline and Device Characteristics ･･･････････････････････ 92C820F-1 2. Pin Assignment and Functions ････････････････････････ 92C820F-5


    Original     		32bit TLCS-900/H1 TMP92C820F 05/Oct/2001 92C820F-1 92C820F-5 92C820F-6 92C820F-10 seven segment to BCD converter LM 7447 IC PH ON 823 m 0233 trk 1203 lm 7085 circuit diagram yd 803 1005 Ic Data 022d px8 ap TMP92C820F sis 6326 PDF

    524V13

    Abstract: 524V25 2V035
    Text: NTE1V010 thru NTE1V300 NTE2V010 thru NTEV480 NTE524V13 thru NTE524V48 Metal Oxide Varistors MOV Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby drain currents.


    Original     		NTE1V010 NTE1V300 NTE2V010 NTEV480 NTE524V13 NTE524V48 524V13 524V25 2V035 PDF