2 CHANNEL LOW DISTORTION CLASS AB TRANSISTOR BA Search Results

2 CHANNEL LOW DISTORTION CLASS AB TRANSISTOR BA Result Highlights (5)

Part	Manufacturer	Description
PQU650-12P	Murata Manufacturing Co Ltd	AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P
NFMJMPC156R0G3D	Murata Manufacturing Co Ltd	Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose
NFM31PC276D0E3L	Murata Manufacturing Co Ltd	Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose
NFMJMPL226R0G5D	Murata Manufacturing Co Ltd	Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL

2 CHANNEL LOW DISTORTION CLASS AB TRANSISTOR BA Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
stripline directional couplers Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1 Text: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,	Original	SG1009Q32005 MMM6025 MC13820 MRF377HR3, MRF377HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, stripline directional couplers MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1	PDF
C 5478 transistor Abstract: transistor 5478 7807 transistor resistor 39 ohm NEL2004 1N4454 1N5254 NEL2004F02-24 173278 LARGE SIGNAL IMPEDANCES Text: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR FEATURES NEL2004F02-24 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: PACKAGE OUTLINE F02 1.5 W Class A, 7 W Class AB • USEABLE FROM 1.5 TO 2.0 GHz (Input Pre-matched) BASE 3±0.2 2±0.2 2±0.2 2 X φ3.2±0.3	Original	NEL2004F02-24 NEL2004F02-24 24-Hour C 5478 transistor transistor 5478 7807 transistor resistor 39 ohm NEL2004 1N4454 1N5254 173278 LARGE SIGNAL IMPEDANCES	PDF
C 5478 transistor Abstract: transistor 5478 7807 transistor NEL2004 1N4454 1N5254 NEL2004F02-24 resistor 39 ohm diode 1n4454 Text: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR FEATURES NEL2004F02-24 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: PACKAGE OUTLINE F02 1.5 W Class A, 7 W Class AB BASE • USEABLE FROM 1.5 TO 2.0 GHz (Input Pre-matched) 3±0.2 2±0.2 5.85±0.2 EMITTER	Original	NEL2004F02-24 NEL2004F02-24 24-Hour C 5478 transistor transistor 5478 7807 transistor NEL2004 1N4454 1N5254 resistor 39 ohm diode 1n4454	PDF
100227 Abstract: NEL2012F03-24 8614 Text: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR NEL2012F03-24 OUTLINE DIMENSIONS Units in mm FEATURES • HIGH OUTPUT POWER: PACKAGE OUTLINE F03 5 W Class A, 16 W Class AB • USEABLE FROM 1.8 TO 2.0 GHz 2.8±0.2 • HIGH LINEAR GAIN: 13.5 dB Class A, 11.0 dB Class AB	Original	NEL2012F03-24 NEL2012F03-24 24-Hour 100227 8614	PDF
TRANSISTOR REPLACEMENT GUIDE Abstract: FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor Text: Quarter 4, 2004 SG1009Q42004 Rev 0 What’s New! Market Product 900 MHz Cellular Base Station MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, MRF9200LR3, MRF9200LSR3 CDMA 1.9 GHz Cellular Base Station	Original	SG1009Q42004 MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, TRANSISTOR REPLACEMENT GUIDE FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor	PDF
M 9587 Abstract: FS Oncore MG4100 LDMOS PA Driver IC, Motorola FS Oncore GPS motorola GPS receiver module fs oncore Motorola transistors MRF646 semiconductors cross index transistor m 9587 MRF9210 Text: RF AND IF QUARTER 1, 2004 SG1009/D REV 0 WWW.MOTOROLA.COM/SEMICONDUCTORS What’s New! Market Product TV Broadcast MRF377 800 MHz 2.2 GHz Cellular Base Station MW4IC001MR4 900 MHz Cellular Base Station MRF9210, MHVIC915R2, MWIC930R1, MWIC930GR1 GSM/GSM EDGE/TDMA 1.8 GHz Cellular Base Station	Original	SG1009/D MRF377 MW4IC001MR4 MRF9210, MHVIC915R2, MWIC930R1, MWIC930GR1 MHVIC1905R2, MW4IC2020MBR1, MW4IC2020GMBR1, M 9587 FS Oncore MG4100 LDMOS PA Driver IC, Motorola FS Oncore GPS motorola GPS receiver module fs oncore Motorola transistors MRF646 semiconductors cross index transistor m 9587 MRF9210	PDF
CLASS AB Abstract: NEL2012F03-24 Text: PRELIMINARY DATA SHEET NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR NEL2012F03-24 OUTLINE DIMENSIONS Units in mm FEATURES • HIGH OUTPUT POWER: PACKAGE OUTLINE F03 5 W Class A, 16 W Class AB • USEABLE FROM 1.8 TO 2.0 GHz 2.8±0.2 • HIGH LINEAR GAIN:	Original	NEL2012F03-24 NEL2012F03-24 24-Hour CLASS AB	PDF
4-611 motorola Abstract: predistorter digital predistortion dpd MW41C2230 APP4611 MAX2009 MAX2010 MRF21085 MRF5P21180 Text: Maxim > App Notes > Basestations/Wireless Infrastructure Communications Circuits Wireless and RF Keywords: predistorter, RF, WCDMA, modulation, linarization, feed forward, FFD, digital predistortion, DPD, AM, PM, ACPR, class AB amplifier, phase distortion, gain, compression, EVM, intermodulation, bias, IM3, Rohde & Schwarz, amptune	Original	MAX2009/MAX2010 MAX2009: MAX2010: com/an4611 AN4611, APP4611, Appnote4611, 4-611 motorola predistorter digital predistortion dpd MW41C2230 APP4611 MAX2009 MAX2010 MRF21085 MRF5P21180	PDF
1N4153 Abstract: NEL2001 NEL200101-24 2.2 uf 50v electrolytic Text: NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR FEATURES NEL200101-24 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 0.7 W 2.0 W • LOW IM DISTORTION: Class A Class AB PACKAGE OUTLINE 01 -36 dBc @ 0.5 W PEP (Class A) -33 dBc @ 1.0 W PEP (Class AB) • HIGH LINEAR GAIN:	Original	NEL200101-24 NEL200101-24 24-Hour 1N4153 NEL2001 2.2 uf 50v electrolytic	PDF
2.2 uf 50v electrolytic Abstract: 1N4153 NEL2001 NEL200101-24 Text: NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR FEATURES NEL200101-24 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 0.7 W 2.0 W Class A Class AB PACKAGE OUTLINE 01 • LOW IM DISTORTION: -36 dBc @ 0.5 W PEP (Class A) -33 dBc @ 1.0 W PEP (Class AB) • HIGH LINEAR GAIN:	Original	NEL200101-24 NEL200101-24 24-Hour 2.2 uf 50v electrolytic 1N4153 NEL2001	PDF
TRANSISTOR MOTOROLA MAC 223 Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac Text: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),	Original		PDF
germanium transistors PNP Abstract: IBM43RF0100 SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR Text: Application Note Evaluating the IBM43RF0100 SiGe Low Noise Transistor Introduction The IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor is a silicon-germanium SiGe NPN transistor designed for high performance, low cost applications. IBM’s SiGe manufacturing and packaging techniques result in a transistor with high gain, low noise,	Original	IBM43RF0100 IBM43RF0100EV 823Vdc. germanium transistors PNP SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR	PDF
MMM6029 Abstract: NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications Text: ZigBee Transceivers RF Cellular Subsystems Low Power RF Components RF Transistors RF Amplifier ICs and Modules RF General Purpose Amplifiers CATV Distribution Amplifier Modules Quarter 4, 2005 SG1009Q42005 Rev 0 What’s New! Market Product GSM/GPRS Cellular	Original	SG1009Q42005 MMM6025, MMM6035 MC13820 MRF6P3300HR3, MRF6P3300HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MMM6029 NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications	PDF
mosfet class d Abstract: PUSH PULL MOSFET DRIVER watts amplifier RF CLASS B FET MOSFET Granberg all mosfet vhf power amplifier narrow band AN860 MC10198 150 watt amplifier advantages and disadvantages all mosfet vhf power amplifier CLASS AB MOSFET RF amplifier Text: Order this document by AN860/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN860 POWER MOSFETs versus BIPOLAR TRANSISTORS Prepared by: Helge O. Granberg Sr. Staff Engineer What is better, if anything, with the power FETs if we can get a bipolar transistor with an equal power rating for less	Original	AN860/D AN860 mosfet class d PUSH PULL MOSFET DRIVER watts amplifier RF CLASS B FET MOSFET Granberg all mosfet vhf power amplifier narrow band AN860 MC10198 150 watt amplifier advantages and disadvantages all mosfet vhf power amplifier CLASS AB MOSFET RF amplifier	PDF

100B0R5BW Abstract: 100B102JW Transistor J438 100B5R6BW MRF21010 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF21010R1 RF Power Field Effect Transistors MRF21010LSR1 The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF21010R1 MRF21010LSR1 MRF21010LSR1 100B0R5BW 100B102JW Transistor J438 100B5R6BW MRF21010	PDF
Untitled Abstract: No abstract text available Text: 19-3457; Rev 2; 2/07 1.3W, Filterless, Stereo Class D Audio Power Amplifier The MAX9701 stereo Class D audio power amplifier provides Class AB amplifier audio performance with the benefits of Class D efficiency, eliminating the need for a heatsink while extending battery life. The MAX9701	Original	MAX9701 B20-1	PDF
24-IS Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR FEATURES_ NEL2012F03-24 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: PACKAGE OUTLINE F03 5 W Class A, 16 W Class AB • USEABLE FROM 1.8 TO 2.0 GHz 2.8±0.2 • HIGH LINEAR GAIN:	OCR Scan	NEL2012F03-24 NEL2012F03-24is NEL2012F03-24 24-IS	PDF
Untitled Abstract: No abstract text available Text: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR NEL2012F03-24 OUTLINE DIMENSIONS Units in mm FEATURES • HIGH OUTPUT POWER: PACKAGE OUTLINE F03 5 W Class A, 16 W Class AB • USEABLE FROM 1.8 TO 2.0 GHz 2.8±0.2 • HIGH LINEAR GAIN: 13.5 dB Class A, 11.0 dB Class AB	OCR Scan	NEL2012F03-24 NEL2012F03-24isan NEL2012F03-24 98B-0279 24-Hour	PDF
C 5478 transistor Abstract: 7807 transistor transistor 5478 TRANSISTOR c 5478 LARGE SIGNAL IMPEDANCES "class AB Linear" Text: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR FEATURES NEL2004F02-24 OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 1.5 W Class A, 7 W Class AB PACKAGE OUTLINE F02 USEABLE FROM 1.5 TO 2.0 GHz (Input Pre-matched) HIGH LINEAR GAIN: 12.0 dB Class A, 10.0 dB Class AB	OCR Scan	NEL2004F02-24 NEL2004F02-24 C 5478 transistor 7807 transistor transistor 5478 TRANSISTOR c 5478 LARGE SIGNAL IMPEDANCES "class AB Linear"	PDF
C 5478 transistor Abstract: No abstract text available Text: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR FEATURES OUTLINE DIMENSIONS NEL2004F02-24 Units in mm HIGH OUTPUT POWER: PACKAGE OUTLINE F02 1.5 W Class A, 7 W Class AB USEABLE FROM 1.5 TO 2.0 GHz (Input Pre-matched HIGH LINEAR GAIN: 12.0 dB Class A, 10.0 dB Class AB	OCR Scan	NEL2004F02-24 NEL2004F02-24isan th-19 24-Hour C 5478 transistor	PDF
Untitled Abstract: No abstract text available Text: NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR FEATURES N E L 2 0 0 1 0 1 -2 4 OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 0.7 W 2.0 W LOW IM DISTORTION Class A Class AB PACKAGE OUTLINE 01 -36 dBc @ 0.5 W PEP (Class A) -33 dBc 0 1.OW PEP (Class AB) HIGH LINEAR GAIN:	OCR Scan	NEL200101-24 NEL2001 1N4153	PDF
C 5478 transistor Abstract: 7807 transistor LM 1709 Text: NPN SILICON BIPOLAR NEL2004F02.24 L - BAND POWER TRANSISTOR OUTLINE DIMENSIONS FEATURES_ Units in mm • HIGH OUTPUT POWER: PACKAGE OUTLINE F02 1.5 W Class A, 7 W Class AB • USEABLE FROM 1.5 TO 2.0 GHz (Input Pre-matched) • HIGH LINEAR GAIN:	OCR Scan	NEL2004F02 NEL2004F02-24 the83 C 5478 transistor 7807 transistor LM 1709	PDF
transistor nec cel Abstract: No abstract text available Text: NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR OUTLINE DIMENSIONS FEATURES_ • HIGH OUTPUT POWER: 0.7 W 2.0 W Class A Class AB • LOW IM DISTORTION: -36 dBc @ 0.5 W PEP Class A -33 dBc @ 1.0 W PEP (Class AB) • HIGH LINEAR GAIN:	OCR Scan	NEL200101-24 NEL200101-24 transistor nec cel	PDF
Untitled Abstract: No abstract text available Text: NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR OUTLINE DIMENSIONS FEATURES_ • HIGH OUTPUT POWER: 0.7 W 2.0 W Class A Class AB • LOW IM DISTORTION: -36 dBc @ 0.5 W PEP Class A -33 dBc @ 1.0 W PEP (Class AB) • HIGH LINEAR GAIN:	OCR Scan	NEL200101-24 NEL200101-24	PDF

2 CHANNEL LOW DISTORTION CLASS AB TRANSISTOR BA Search Results

2 CHANNEL LOW DISTORTION CLASS AB TRANSISTOR BA Result Highlights (5)

2 CHANNEL LOW DISTORTION CLASS AB TRANSISTOR BA Datasheets Context Search

stripline directional couplers

C 5478 transistor

C 5478 transistor

100227

TRANSISTOR REPLACEMENT GUIDE

M 9587

CLASS AB

4-611 motorola

1N4153

2.2 uf 50v electrolytic

TRANSISTOR MOTOROLA MAC 223

germanium transistors PNP

MMM6029

mosfet class d

100B0R5BW

Untitled

24-IS

Untitled

C 5478 transistor

C 5478 transistor

Untitled

C 5478 transistor

transistor nec cel

Untitled