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    2.4 GHZ RF TRANSISTOR Search Results

    2.4 GHZ RF TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LTC6268IS8-10#TRPBF Analog Devices 4GHz Ultra-L Bias C FET In Op Visit Analog Devices Buy
    LTC6269IDD-10#PBF Analog Devices 2x 4GHz Ultra-L Bias C FET In Visit Analog Devices Buy
    LTC6268HS8-10#PBF Analog Devices 4GHz Ultra-L Bias C FET In Op Visit Analog Devices Buy
    LTC6268IS8-10#PBF Analog Devices 4GHz Ultra-L Bias C FET In Op Visit Analog Devices Buy
    LTC6269HMS8E-10#TRPBF Analog Devices 2x 4GHz Ultra-L Bias C FET In Visit Analog Devices Buy

    2.4 GHZ RF TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NXP power LDMOS transistors BLF7G24LS-100 and BLF7G24LS-140 RF power transistors for leading LTE basestation performance at 2.3 to 2.4 GHz Designed for LTE basestations and built in industry-leading Gen7 LDMOS, these highly DPDfriendly transistors cover the entire frequency range of 2.3 to 2.4 GHz. They enable asymmetrical


    Original     		PDF BLF7G24LS-100 BLF7G24LS-140 BLF7G24LS-100 BLF7G24LS-140

    Untitled

    Abstract: No abstract text available
    Text: SP5748 2.4 GHz Very Low Phase Noise PLL Data Sheet DS4875 November 2004 Features Ordering Information • Complete 2.4 GHz Single Chip System for faster device refer to SP5768 • Optimised for Low Phase Noise, with Comparison Frequencies up to 4 MHz • No RF Prescaler


    Original     		PDF SP5748 DS4875 SP5768) SP5658 SP5668 110mW SP5658 MIL-STD-883B SP5748/KG/MP1S SP5748/KG/MP1T

    TRANSFORMER RF 4.5 MHZ TOKO

    Abstract: Motorola Impedance Matching Program 6 pin SMD transformer TOKO 4.5 transformer motorola smd diodes b4f TOKO transformer 3 to 10 GHz mixer SIEMENS saw filter Mixer IC high frequency mixer
    Text: Order this document from Analog Marketing MC13143 Product Preview Ultra Low Power DC 2.4 GHz Linear Mixer ULTRA LOW POWER DC – 2.4 GHz LINEAR MIXER The MC13143 is a high compression linear mixer with single–ended RF input, differential IF output and differential LO inputs which consumes as


    Original     		PDF MC13143 MC13143 MC13143/D* MC13143/D TRANSFORMER RF 4.5 MHZ TOKO Motorola Impedance Matching Program 6 pin SMD transformer TOKO 4.5 transformer motorola smd diodes b4f TOKO transformer 3 to 10 GHz mixer SIEMENS saw filter Mixer IC high frequency mixer

    BFR90

    Abstract: No abstract text available
    Text: BFR90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 5.0 GHz typ @ IC = 14 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz • High Power Gain – Gmax = 18dB (typ) @ f = 0.5 GHz Macro T


    Original     		PDF BFR90 MRF545 MRF544 BFR90

    BFR96

    Abstract: No abstract text available
    Text: BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 4.5 GHz typ @ IC = 50 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz • High Power Gain – Gmax = 14.5dB (typ) @ f = 0.5 GHz Macro T


    Original     		PDF BFR96 MRF5812, MRF559 MRF8372 MRF557 MRF557T BFR96

    transistor marking R57 ghz

    Abstract: No abstract text available
    Text: NPN SILICON RF TRANSISTOR NE664M04 / 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm


    Original     		PDF NE664M04 2SC5754 NE664M04-A 2SC5754-A NE664M04-T2-A 2SC5754-T2-A PU10008EJ01V0DS transistor marking R57 ghz

    j 6815 transistor

    Abstract: 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800 NE5520379A PU10008EJ01V0DS
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm


    Original     		PDF 2SC5754 2SC5754-T2 j 6815 transistor 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800 NE5520379A PU10008EJ01V0DS

    TRANSISTOR J 6815 EQUIVALENT

    Abstract: 2SC5754-T2 nec k 813 DCS1800 GSM1800 NE5520379A 2SC5434 2SC5509 2SC5753 2SC5754
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm


    Original     		PDF 2SC5754 2SC5754-T2 TRANSISTOR J 6815 EQUIVALENT 2SC5754-T2 nec k 813 DCS1800 GSM1800 NE5520379A 2SC5434 2SC5509 2SC5753 2SC5754

    transistor smd d2t

    Abstract: lm 4572 SMD 8 PIN smd transistor h2a H2A transistor SMD smd code H2A motorola smd transistor code 935 transistor smd H2A TOKO CERAMIC FILTER siemens rfm-1 TOKO B5FL
    Text: MC13143 Product Preview Ultra Low Power DC 2.4 GHz Linear Mixer ULTRA LOW POWER DC – 2.4 GHz LINEAR MIXER The MC13143 is a high compression linear mixer with single–ended RF input, differential IF output and differential LO inputs which consumes as little as 1.8 mW. A new circuit topology is used to achieve a high third order


    Original     		PDF MC13143 MC13143 transistor smd d2t lm 4572 SMD 8 PIN smd transistor h2a H2A transistor SMD smd code H2A motorola smd transistor code 935 transistor smd H2A TOKO CERAMIC FILTER siemens rfm-1 TOKO B5FL

    transistor marking R57 ghz

    Abstract: TRANSISTOR R57 PU10008EJ02V0DS 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm


    Original     		PDF 2SC5754 2SC5754-T2 PU10008EJ02V0DS transistor marking R57 ghz TRANSISTOR R57 PU10008EJ02V0DS 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800

    BFY182

    Abstract: No abstract text available
    Text: BFY182 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.4 dB at 2 GHz •


    Original     		PDF BFY182 Q62702F1608 QS9000 BFY182

    bfp640f

    Abstract: transistor cross reference chart AN082 BFP640 amplifier TRANSISTOR 12 GHZ
    Text: Application Note, Rev. 1.2, Oktober 2007 Application Note No. 126 BFP640F Low-Noise Silicon-Germanium Transistor as 5 -6 GHz Single-Stage Low Noise Amplifier LNA , with reduced external component count and reduced gain at 2.4 GHz RF & Protection Devices Edition 2007-10-17


    Original     		PDF BFP640F transistor cross reference chart AN082 BFP640 amplifier TRANSISTOR 12 GHZ

    RAYTHEON

    Abstract: RMPA2550-252 54Mbps IC155
    Text: Raytheon RMPA2550-252 RF Components 2.4-2.5 GHz and 5.15-5.35 GHz Dual Band InGaP HBT Linear Power Amplifier ADVANCED INFORMATION Description Features Absolute Ratings1 The RMPA2550-252 is a dual frequency band power amplifier designed for high performance WLAN


    Original     		PDF RMPA2550-252 RMPA2550-252 10dBm 16dBm 20dBm 14dBm 17dBm 21dBm 24dBm RAYTHEON 54Mbps IC155

    transistor BC 245

    Abstract: 420 transistor Infineon Technologies transistor 4 ghz infineon rf smd package amplifier TRANSISTOR 14 GHZ RF TRANSISTOR SOT23 5 BFP420 smd transistor infineon RF Semiconductors TRANSISTOR BC 136
    Text: Application Note No. 001 Discrete & RF Semiconductors SIEGET 25 Low Noise Amplifier with BFP 420 Transistor at 2.4 GHz The SIEMENS Grounded Emitter Transistor Line is a completely new generation of silicon bipolar junction RF-transistors. This application note describes a low-noise amplifier with the


    Original     		PDF

    bfr96

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz


    Original     		PDF BFR96 bfr96

    BFR90

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz


    Original     		PDF BFR90 BFR90

    BFR90

    Abstract: BFR90 application
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz


    Original     		PDF BFR90 MRF571 BFR91 MRF545 MRF544 BFR90 BFR90 application

    BFR96

    Abstract: MSC1309 2N4427 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF607
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz


    Original     		PDF BFR96 2N5179 2N2857 MRF517 2N5109 MRF5943C MRF5943, MSC1309 BFR96 2N4427 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF607

    Untitled

    Abstract: No abstract text available
    Text: BFY182 HiRel NPN Silicon RF Transistor •     HiRel Discrete and Microwave Semiconductor 4 3 1 2 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.4 dB at 2 GHz


    Original     		PDF BFY182

    BFR96

    Abstract: MRF586 bfr96 equivalent
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz


    Original     		PDF BFR96 2N5179 2N2857 MRF517 2N5109 MRF5943C MRF5943, BFR96 MRF586 bfr96 equivalent

    BFR90

    Abstract: 2N4427 2N5179 2N6255 MRF4427 MRF553 MRF559 MRF607
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz


    Original     		PDF BFR90 MRF571 BFR91 MRF545 MRF544 MSC1307 BFR90 2N4427 2N5179 2N6255 MRF4427 MRF553 MRF559 MRF607

    BFY182

    Abstract: No abstract text available
    Text: BFY182 HiRel NPN Silicon RF Transistor •     HiRel Discrete and Microwave Semiconductor 4 3 1 2 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.4 dB at 2 GHz


    Original     		PDF BFY182 BFY182

    MS3421

    Abstract: s band
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS3421 RF & MICROWAVE TRANSISTORS S BAND GENERAL PURPOSE Features • • • • GOLD METALIZATION 600 mW POWER OUTPUT 2.4 GHz OPERATION COMMON BASE CONFIGURATION


    Original     		PDF MS3421 MS3421 MSC0929 s band

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS HiRel NPN Silicon RF Transistor BFY182 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA • Hermetically sealed microwave package • f T = 8 GHz, F = 2.4 dB at 2 GHz


    OCR Scan     		PDF BFY182 Q62702F1608 Q62702F1714 BFY182 de/semiconductor/products/35/35 de/semiconductor/products/35/353 FY182 GXM05552