Untitled
Abstract: No abstract text available
Text: IXKC 40N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 28 A RDS on) max = 95 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 Features
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40N60C
ISOPLUS220TM
E72873
20080523a
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40n60c
Abstract: mosfet 4800 E72873
Text: IXKC 40N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 28 A RDS on) max = 95 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873
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40N60C
ISOPLUS220TM
E72873
20080523a
40n60c
mosfet 4800
E72873
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20N60C
Abstract: No abstract text available
Text: IXKC 20N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 15 A RDS on) max = 190 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873
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20N60C
ISOPLUS220TM
E72873
20080523a
20N60C
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23N60
Abstract: 23n60c5 E72873 IXKC23N60C5 18A60
Text: IXKC 23N60C5 Advanced Technical Information CoolMOS 1 Po wer MOSFET ID25 = 23 A VDSS = 600 V RDS on) max = 0.1 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge
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23N60C5
ISOPLUS220TM
E72873
IXKC23N60C5
20080523a
23N60
23n60c5
E72873
IXKC23N60C5
18A60
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35n60
Abstract: IXKH35N60C5 35n60c MOSFET IXYS TO-220 35n60c5 IXKP35N60C5 MOS-FET 1307 L-120 AB
Text: IXKH 35N60C5 IXKP 35N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 35 A VDSS = 600 V RDS on) max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP)
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35N60C5
O-247
O-220
20080523a
35n60
IXKH35N60C5
35n60c
MOSFET IXYS TO-220
35n60c5
IXKP35N60C5
MOS-FET 1307
L-120 AB
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85N60C
Abstract: UPS SIEMENS E72873 ID100
Text: IXKK 85N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 94 A RDS on) max = 36 mΩ Low RDSon, high VDSS Superjunction MOSFET D TO-264 G G q D E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C
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85N60C
O-264
E72873
ID100
20080523a
85N60C
UPS SIEMENS
E72873
ID100
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SOT-227 heatsink
Abstract: Ixkn 40N60C E72873
Text: IXKN 40N60C CoolMOS 1 Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS ID25 RDS on) 600 V 40 A Ω 70 mΩ miniBLOC, SOT-227 B G E72873 D S G Preliminary data S S S D G = Gate D = Drain S = Source Either source terminal at miniBLOC can be used
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40N60C
OT-227
E72873
20080523a
SOT-227 heatsink
Ixkn
40N60C
E72873
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20n60c
Abstract: IXKC 20n60c E72873 A8711
Text: IXKC 20N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 15 A RDS on) max = 190 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873
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20N60C
ISOPLUS220TM
E72873
20080523a
20n60c
IXKC 20n60c
E72873
A8711
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40N60C
Abstract: ISOPLUS247 ISOPLUS247TM ixkr 40n60c IXKR40N60C
Text: IXKR 40N60C CoolMOS 1 Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base D VDSS ID25 RDS on) 600 V 38 A 70 mΩ Ω ISOPLUS 247TM E153432 G G D Preliminary data S S G = Gate
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40N60C
ISOPLUS247TM
247TM
E153432
O-247
20080523a
40N60C
ISOPLUS247
ixkr 40n60c
IXKR40N60C
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15N60
Abstract: 15N60C5 E72873 15n60c
Text: IXKC 15N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 15 A VDSS = 600 V RDS on) max = 0.165 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge
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15N60C5
ISOPLUS220TM
E72873
20080523a
15N60
15N60C5
E72873
15n60c
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47N60C
Abstract: 47n60 power mosfet 350v 30a to 247 UPS SIEMENS E72873 ID100
Text: IXKH 47N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A RDS on) max = 70 mΩ Low RDSon, high VDSS Superjunction MOSFET D TO-247 G G q D E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C
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47N60C
O-247
E72873
ID100
20080523a
47N60C
47n60
power mosfet 350v 30a to 247
UPS SIEMENS
E72873
ID100
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47N60C
Abstract: No abstract text available
Text: IXKH 47N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A RDS on) max = 70 m Low RDSon, high VDSS Superjunction MOSFET D TO-247 G G fl D E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C
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47N60C
O-247
E72873
ID100
20080523a
47N60C
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19n60
Abstract: 19n60c5 E72873
Text: IXKC 19N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 19 A VDSS = 600 V RDS on) max = 0.125 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge
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19N60C5
ISOPLUS220TM
E72873
20080523a
19n60
19n60c5
E72873
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Untitled
Abstract: No abstract text available
Text: LKK 47-06C5 Advanced Technical Information Dual CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A Ω/MOSFET RDS on) max = 45 mΩ Common Source Topology DCB isoated package 4 D1 T1 2 G1 3 S 1 2 3 4 5 T2 1 G2 5 D2 Features MOSFET T1/T2 Symbol Conditions VDSS
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