Untitled
Abstract: No abstract text available
Text: IXKC 23N60C5 Advanced Technical Information ID25 = 23 A VDSS = 600 V RDS on max = 0.1 Ω CoolMOS Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM
|
Original
|
23N60C5
ISOPLUS220TM
E72873
|
PDF
|
23N60
Abstract: No abstract text available
Text: IXTQ 23N60Q Power MOSFETs VDSS ID25 Q-Class = = = RDS on 600 V 23 A 0.32 Ω N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
|
Original
|
23N60Q
728B1
123B1
728B1
065B1
23N60
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IXKC 23N60C5 CoolMOS 1 Power MOSFET ID25 = 23 A VDSS = 600 V RDS on) max = 0.1 Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S Preliminary data
|
Original
|
23N60C5
ISOPLUS220TM
E72873
20100303c
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IXFH 23N60Q IXFT 23N60Q HiPerFETTM Power MOSFETs VDSS ID25 RDS on Q-Class = = = 600 V 23 A 0.32 Ω trr ≤ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Preliminary Data Sheet Symbol Test Conditions Maximum Ratings
|
Original
|
23N60Q
250ns
O-247
728B1
123B1
728B1
065B1
|
PDF
|
23N60
Abstract: 23n60c5 E72873 IXKC23N60C5 18A60
Text: IXKC 23N60C5 Advanced Technical Information CoolMOS 1 Po wer MOSFET ID25 = 23 A VDSS = 600 V RDS on) max = 0.1 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge
|
Original
|
23N60C5
ISOPLUS220TM
E72873
IXKC23N60C5
20080523a
23N60
23n60c5
E72873
IXKC23N60C5
18A60
|
PDF
|
23N60
Abstract: G 23N60 SiS 961 IXTQ23N60Q 123b1
Text: IXTQ 23N60Q Power MOSFETs VDSS ID25 Q-Class = = = RDS on 600 V 23 A 0.32 Ω N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
|
Original
|
23N60Q
728B1
123B1
728B1
065B1
23N60
G 23N60
SiS 961
IXTQ23N60Q
|
PDF
|
23N60
Abstract: E72873 A6014
Text: IXKC 23N60C5 CoolMOS 1 Power MOSFET ID25 = 23 A VDSS = 600 V RDS on) max = 0.1 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S Preliminary data
|
Original
|
23N60C5
ISOPLUS220TM
E72873
20100303c
23N60
E72873
A6014
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IXKC 23N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 23 A VDSS = 600 V RDS on max = 0.1 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM
|
Original
|
23N60C5
ISOPLUS220TM
E72873
|
PDF
|
23N60
Abstract: G 23N60 transistor N 343 AD 123B1
Text: IXFH 23N60Q IXFT 23N60Q HiPerFETTM Power MOSFETs VDSS ID25 = = = RDS on Q-Class 600 V 23 A 0.32 Ω trr ≤ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Preliminary Data Sheet Symbol Test Conditions Maximum Ratings
|
Original
|
23N60Q
250ns
O-247
O-268
728B1
123B1
728B1
065B1
23N60
G 23N60
transistor N 343 AD
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IXKC 23N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 23 A VDSS = 600 V RDS on max = 0.1 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM
|
Original
|
23N60C5
ISOPLUS220TM
E72873
|
PDF
|
23N60E
Abstract: 23N60 FMH23N60E electric
Text: DATE CHECKED Oct.-24-'07 CHECKED Oct.-24-'07 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor
|
Original
|
FMH23N60E
MS5F6929
H04-004-05
H04-004-03
23N60E
23N60
FMH23N60E
electric
|
PDF
|
23N60
Abstract: 23N60E
Text: DATE CHECKED Oct.-24-'07 CHECKED Oct.-24-'07 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor
|
Original
|
FMR23N60E
MS5F6930
H04-004-05
H04-004-03
23N60
23N60E
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATE CHECKED Oct.-24-'07 CHECKED Oct.-24-'07 NAME DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor
|
Original
|
MS5F6929
FMH23N60E
H04-004-05
H04-004-03
|
PDF
|
7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
|
Original
|
MS-013
10-Pin
5M-1994
MO-229
7N60B equivalent
18N50 equivalent
ixgh 1499
MOSFET smd 4407
IXDD 614
C 547 B W57 BJT transistor
r1275ns20l
R1271ns12C
IXYS CS 20-22 MOF1
IXTP 220N04T2
|
PDF
|
|
|
23N60
Abstract: 23N60ES ic MARKING QG FMH23N60E
Text: DATE CHECKED Sep.-29-'08 CHECKED Sep.-29-'08 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor
|
Original
|
FMH23N60ES
MS5F7208
H04-004-05
H04-004-03
23N60
23N60ES
ic MARKING QG
FMH23N60E
|
PDF
|
23N60E
Abstract: No abstract text available
Text: DATE CHECKED Oct.-24-'07 CHECKED Oct.-24-'07 NAME DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor
|
Original
|
MS5F6930
FMR23N60E
H04-004-05
H04-004-03
23N60E
|
PDF
|
SGW23N60UFD
Abstract: No abstract text available
Text: SGW 23N60UFD FE A TU R ES N-CHANNEL IG B T D2-PAK * High Speed Switching * Low Saturation Voltage : V CE sat = 1.95 V (@ lc=12A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 42nS (typ.) A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters
|
OCR Scan
|
SGW23N60UFD
SGW23N60UFD
|
PDF
|
SGW23N60UF
Abstract: No abstract text available
Text: SGW 23N60UF N-CHANNEL IG B T FE A TU R ES * High Speed Switching * Low Saturation Voltage : V CE sat = 1.95 V (@ lc=12A) * High Input Impedance A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters Robotics , Servo Controls Power Supply
|
OCR Scan
|
SGW23N60UF
SGW23N60UF
|
PDF
|
