IXTH02N250
Abstract: IXTV02N250S PLUS220SMD DS100187B 02N250
Text: IXTH02N250 IXTV02N250S High Voltage Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 2500V 200mA Ω 450Ω TO-247 (IXTH) Symbol Test Conditions VDSS TJ = 25°C to 150°C 2500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTH02N250
IXTV02N250S
200mA
O-247
100ms
02N250
10-20-10-B
IXTH02N250
IXTV02N250S
PLUS220SMD
DS100187B
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DS100187A
Abstract: IXTV02N250S IXTH02N250 PLUS220SMD 02N250
Text: Preliminary Technical Information IXTH02N250 IXTV02N250S High Voltage Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 2500V 200mA Ω 450Ω TO-247 (IXTH) Symbol Test Conditions VDSS TJ = 25°C to 150°C 2500 V
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IXTH02N250
IXTV02N250S
200mA
O-247
100ms
02N250
10-20-10-B
DS100187A
IXTV02N250S
IXTH02N250
PLUS220SMD
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IXTA02N250
Abstract: No abstract text available
Text: Advance Technical Information IXTA02N250HV High Voltage Power MOSFET VDSS ID25 RDS on = = ≤ 2500V 200mA Ω 450Ω N-Channel Enhancement Mode Fast Intrinsic Diode TO-263AB G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V
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IXTA02N250HV
O-263AB
200mA
100ms
100ms
02N250
IXTA02N250
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IXTA02N250
Abstract: No abstract text available
Text: High Voltage Power MOSFETs IXTA02N250 IXTH02N250 IXTV02N250S VDSS ID25 RDS on = = ≤ 2500V 200mA Ω 450Ω N-Channel Enhancement Mode Fast Intrinsic Diode TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTA02N250
IXTH02N250
IXTV02N250S
200mA
O-263
IXTA02N250
100ms
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IXTA02N250
Abstract: No abstract text available
Text: IXTA02N250 IXTH02N250 IXTV02N250S High Voltage Power MOSFETs VDSS ID25 RDS on = = ≤ 2500V 200mA Ω 450Ω N-Channel Enhancement Mode Fast Intrinsic Diode TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTA02N250
IXTH02N250
IXTV02N250S
200mA
O-263
O-247
PLUS220SMD
O-247)
PLUS220
O-263)
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SD103AWS
Abstract: 30V 200mA schottky barrier diode SD103CWS SD103BWS
Text: SD103AWS/SD103BWS/SD103CWS SURFACE MOUNT SCHOTTKY BARRIER DIODES SMALL SIGNAL SCHOTTKY DIODES 350m AMPERES 20~40 VOLTS SOD-323 .091 2.30 1.63(2.70) .063(1.60) .071(1.80) .009(0.25) .016(0.40) 1 .045(1.15) .053(1.35) 2 0.15R .031(0.80) .039(1.00) .0035(0.089)
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SD103AWS/SD103BWS/SD103CWS
OD-323
OD-323
MIL-STD-202
004grams
SD103AWS
SD103BWS
SD103CWS
100uA)
200mA
SD103AWS
30V 200mA schottky barrier diode
SD103CWS
SD103BWS
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CH781UGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CH781UGP SURFACE MOUNT SCHOTTKY DIODE ARRAY VOLTAGE 40 Volts CURRENT 175 mAmperes APPLICATION * Ultra high speed switching FEATURE * Small surface mounting type. SC-88/SOT-363 * High speed. (TRR=8.0nSec Typ.) * Suitable for high packing density.
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CH781UGP
SC-88/SOT-363)
SC-88/SOT-363
200mW.
CH781UGP
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SOT-363 marking jf
Abstract: 10V Schottky Diode IR 30 D1
Text: CHENMKO ENTERPRISE CO.,LTD CH781UPT SURFACE MOUNT SCHOTTKY DIODE ARRAY VOLTAGE 40 Volts CURRENT 175 mAmperes APPLICATION * Ultra high speed switching FEATURE * Small surface mounting type. SC-88/SOT-363 * High speed. (TRR=8.0nSec Typ.) * Suitable for high packing density.
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CH781UPT
SC-88/SOT-363)
SC-88/SOT-363
200mW.
SOT-363 marking jf
10V Schottky Diode
IR 30 D1
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MELF DIODE color bands
Abstract: LL103A LL103B LL103C minimelf diodes color
Text: LL103A/B/C Schottky Barrier Diodes Schottky Barrier Diode 350 mAMPERES 20-40 VOLTS P b Lead Pb -Free Features: * Small surface mounting type * High reliability * Low reverse current and low forward voltage * Low current rectification and high speed switching
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LL103A/B/C
OD-80)
24-Feb-06
LL103A
100mA
200mA
400mA
MELF DIODE color bands
LL103A
LL103B
LL103C
minimelf diodes color
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SD103CW
Abstract: No abstract text available
Text: RECTRON SD103CW SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE VOLTAGE RANGE 20 Volts FEATURES * * * * Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance SOD-123 MECHANICAL DATA
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SD103CW
OD-123
MIL-STD-202E
SD103CW
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SD103BW
Abstract: No abstract text available
Text: RECTRON SD103BW SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE VOLTAGE RANGE 30 Volts FEATURES * * * * Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance SOD-123 MECHANICAL DATA
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SD103BW
OD-123
MIL-STD-202E
SD103BW
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SD103AW
Abstract: No abstract text available
Text: RECTRON SD103AW SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE VOLTAGE RANGE 40 Volts FEATURES * * * * Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance SOD-123 MECHANICAL DATA
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SD103AW
OD-123
MIL-STD-202E
SD103AW
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Untitled
Abstract: No abstract text available
Text: RECTRON SD103BW SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE VOLTAGE RANGE 30 Volts FEATURES * * * * Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance SOD-123 MECHANICAL DATA
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SD103BW
OD-123
MIL-STD-202E
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Untitled
Abstract: No abstract text available
Text: RECTRON SD103CW SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE VOLTAGE RANGE 20 Volts FEATURES * * * * Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance SOD-123 MECHANICAL DATA
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SD103CW
OD-123
MIL-STD-202E
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zener diode 12v 0.5 w
Abstract: 12v zener diode code 13w marking code marking code 13W zener 7.1 V MA344
Text: Central BZX85C3V3 THRU BZX85C33 TM Semiconductor Corp. SURFACE MOUNT 1.3W SILICON ZENER DIODE 3.3 VOLTS THRU 33 VOLTS Description: The CENTRAL SEMICONDUCTOR BZX85C3V3 Series are silicon Zener diodes. These high quality voltage regulating diodes are designed for
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BZX85C3V3
BZX85C33
DO-41
200mA
BZX85C3V6
BZX85C3V9
BZX85C4V3
BZX85C4V7
zener diode 12v 0.5 w
12v zener diode code
13w marking code
marking code 13W
zener 7.1 V
MA344
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schottky marking S4
Abstract: SD103CWS SD103AWS SD103BWS
Text: SD103AWS/SD103BWS SD103CWS Surface Mount Schottky Barrier Diodes Features: *Low Forward Voltage *Very Small Conduction Losses *Schottky Barrier Diodes Encapsulated in a SOD-323 Package SMALL SIGNAL SCHOTTKY DIODES 350 mAMPERES 20-40 VOLTS Mechanical Data:
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SD103AWS/SD103BWS
SD103CWS
OD-323
MIL-STD-202
004grams
OD-323
SD103AWS
schottky marking S4
SD103CWS
SD103AWS
SD103BWS
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Untitled
Abstract: No abstract text available
Text: SD103AWS/SD103BWS SD103CWS Surface Mount Schottky Barrier Diodes * “G” Lead Pb -Free Features: *Low Forward Voltage *Very Small Conduction Losses *Schottky Barrier Diodes Encapsulated in a SOD-323 Package SMALL SIGNAL SCHOTTKY DIODES 350 mAMPERES 20-40 VOLTS
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SD103AWS/SD103BWS
SD103CWS
OD-323
MIL-STD-202
004grams
OD-323
SD103AWS
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Untitled
Abstract: No abstract text available
Text: WE IT R ON Surface Mount Schottky Barrier Diodes Features: *Low Forward Voltage *Very Small Conduction Losses *Schottky Barrier Diodes Encapsulated in a SOD-323 Package SD103AWS/SD103BWS SD103CWS SMALL SIGNAL SCHOTTKY DIODES 350 mAMPERES 20-40 VOLTS Mechanical Data:
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OD-323
SD103AWS/SD103BWS
SD103CWS
MIL-STD-202
004grams
OD-323
SD103AWS
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Untitled
Abstract: No abstract text available
Text: OPTO DIODE CORP SSE D • bflOmfi OOOOOflfl R3b * O P D HIGH-POWER GaAIAs IR EMITTERS OD-24F FEATURES • High current capability • 880nm peak emission for optimum matching with silicon detectors • Hermetically sealed TO-46 package • 100% test for minimum power requirement
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OCR Scan
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OD-24F
880nm
OD-24F
OD-24X24-C
OD-88OF.
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Opto Diode
Abstract: OD-24F OD-24X24-C
Text: OPTO DIODE CORP 5SE D • b flo m a □□□□□aa hopd HIGH-POWER GaAIAs IR EMITTERS OD-24F FEATURES • High current capability • 880nm peak emission for optimum matching with silicon detectors • Hermetically sealed T O -46 package • 100% test for minimum power requirement
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OCR Scan
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OP-24F
880nm
OD-24F
OD-24X24-C
OD-88OF.
Opto Diode
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kvp 68A
Abstract: XMR5 xlr10
Text: DIODES DIODES, HIGH VOLTAGE, AXIAL LEAD Standard — Fast — Ultra-Fast Recovery CURRENT VOLTS RECOVERY ns SURGE(A) SERIES PAGE STANDARD STANDARD STANDARD STANDARD STANDARD STANDARD STANDARD STANDARD 300 5 25-35 15 12 10 8 5 3W HV EF, EG, EH EK EM EP ER
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350mA
600mA
200mA
175mA
150mA
100mA
500mA
300mA
125mA
kvp 68A
XMR5
xlr10
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Kvp 26A
Abstract: kvp 3a kvp 42 DIODE kvp 34 DIODE 100-200KV kvp diode kvp 68A hv rectifiers diode kvp 26 DIODE 8ph ZENER
Text: NEW E-MAIL ADDRESS DIODES EDI-SALES@INTERNETMCI.COM AXIAL LEAD DIODES CURRENT PRV VOLTS RECOVERY (nS) SURGE (A) SERIES PAGE STANDARD RECOVERY. PRINTED CIRCUIT MOUNT 6A 6A 6A 3A 2A 100 to 600mA 220mA 200mA 175mA 150mA 100mA 50 to 80mA 50mA 50-1000 50-1000
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600mA
220mA
200mA
175mA
150mA
100mA
500mA
Kvp 26A
kvp 3a
kvp 42 DIODE
kvp 34 DIODE
100-200KV
kvp diode
kvp 68A
hv rectifiers diode
kvp 26 DIODE
8ph ZENER
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kvp 42 DIODE
Abstract: kvp 68A kvp diode kvp 34 DIODE kvp 30 DIODE kvp 88 diode kvp 23A Kvp 26A kvp 26 DIODE 100-200KV
Text: NEW E-MAIL ADDRESS DIODES EDI-SALES@INTERNETMCI.COM AXIAL LEAD DIODES CURRENT PRV VOLTS RECOVERY (nS) SURGE (A) SERIES PAGE STANDARD RECOVERY. PRINTED CIRCUIT MOUNT 6A 6A 6A 3A 2A 100 to 600mA 220mA 200mA 175mA 150mA 100mA 50 to 80mA 50mA 50-1000 50-1000
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600mA
220mA
200mA
175mA
150mA
100mA
500mA
kvp 42 DIODE
kvp 68A
kvp diode
kvp 34 DIODE
kvp 30 DIODE
kvp 88 diode
kvp 23A
Kvp 26A
kvp 26 DIODE
100-200KV
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kvp smd
Abstract: kvp 42 DIODE kvp 26A M kvp diode 2005C 1.5 khp SMD kvp XMR5 0709a PKF SMD
Text: AXIAL LEAD DIODES CURRENT P R V VO LTS R E C O V E R Y (nS) SU R G E (A) S E R IE S PAGE 50-1000 50-1000 50-1000 50-1000 2000 to 3000 1000 to 4000 9000 4500 to 6000 7000 to 8000 9000 to 10000 11000 to 12000 1000 to 5000 10000 to 15000 STANDARD STANDARD STANDARD
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600mA
220mA
200mA
175mA
150mA
100mA
500mA
kvp smd
kvp 42 DIODE
kvp 26A M
kvp diode
2005C
1.5 khp
SMD kvp
XMR5
0709a
PKF SMD
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