Untitled
Abstract: No abstract text available
Text: 2SK1428 2052B AP A d v a n c e d P e rfo rm a n c e Series VDSs = 1 0 0 V N Channel Power M OSFET F eatu res • Low ON-state resistance. • Very high-speed switching. • Converters. A bsolute M axim um R atings at T a= 25°C Drain to Source Voltage Vdss
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2SK1428
2052B
7151JN
X-6618
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PDF
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2052B
Abstract: No abstract text available
Text: 2SK1439 2052B A P A dvanced Perfo rm ance Series Voss = 4 5 0 V N Channel Power M O S F E T F eatures • Low ON-state resistance. • Very high-speed switching. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage VDSS Gate to Source Voltage
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2SK1439
2052B
10/iS,
7151JN
X-6827,
Tc-25*
2052B
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PDF
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k 1441
Abstract: No abstract text available
Text: 2SK1441 2052B AP A d va n ce d P e rfo rm a n c e Series Voss = 4 5 0 V N Channel Pow er M O S F E T F eatures • Low ON-state resistance. • Very high-speed switching. A bsolute M axim um R atings at T a= 25°C Drain to Source Voltage Vdss Gate to Source Voltage
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2SK1441
2052B
-25Cn
k 1441
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK1052 2052B AP A d va n ce d P e rfo rm a n c e Series Voss = 4 5 0 V N Channel Power MOSFET 3439 Features • Low ON-state resistance. •Very high-speed Switching. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage
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2SK1052
2052B
DD1M123
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK1439 2052B A P A d v a n c e d P e r f o r m a n c e S e r ie s V dss — 4 5 0 V N Channel Power M OSFET 3442 Features • Low ON-state resistance. • Very high-speed switching. A bsolute M axim um R atings at T a= 25°C Drain to Source Voltage
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2SK1439
2052B
1413E
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK1438 2052B AP A d va n ce d P e rfo rm a n c e Series V dss = 4 5 0 V N Channel Power MOSFET 3441 F eatures • Low ON-state resistance. • Very high-speed switching. A bsolute M axim um R atings at Ta=25°C Drain to Source Voltage Vdss Gate to Source Voltage
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2SK1438
2052B
10/LiS,
Resistanc8035
cn707b
GD1412Ã
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PDF
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2052B
Abstract: X-6618
Text: 2SK1417 2052B AP A d va n c e d P e rfo rm a n c e Series V dss = 6 0 V N Channel Power MOSFET E3555 F e a tu re s •Low ON-state resistance • Very high-speed switching. • Converters. A b so lu te M axim um R atin g s at Ta = 25°C Drain to Source Voltage
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2SK1417
2052B
E3555
10//s,
2SK1417
2011JN
X-6618,
2052B
X-6618
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK1427 A P A d v a n c e d P e rfo rm a n c e S e rie s 2052B V dss — 1 o o v N Channel Power M OSFET F eatures • Low ON-state resistance. • Very high-speed switching. • Converters. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage
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2SK1427
2052B
--10A
2SK1427
O-220A3
SC-46
7151JN
X-6618,
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK1455 2052B U H Ultrahigh Voltage S eries V DSs = 9 0 0 V N Channel Power MOSFET F e a tu re s • Low ON-state resistance. • Very high-speed switching. • Converters. A bso lu te M axim um R atin g s at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage
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2SK1455
2052B
10/iS,
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2052B
Abstract: 2sK1440
Text: 2SK1440 AP A d va n ce d P e rfo rm a n c e Series V dss = 4 5 0 V 2052B N Channel Power MOSFET F e a tu re s • Low ON-state resistance. • Very high-speed switching. A bso lu te M axim um R atin g s a t Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage
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2SK1440
2052B
2052B
2sK1440
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK1418 2052B AP A d v a n c e d P e rfo rm a n c e Series V Dss = 6 0 V N Channel Power M O SFET F e a tu r e s • Low O N -state resistance. • V ery high-speed sw itching. • C onverters. A b s o lu te M a x im u m R a tin g s a t T a = 25°C D rain to Source Voltage
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2SK1418
2052B
10//S,
VDS--20
2SK1418
O-220A3
SC-46
2011JN
X-6618,
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PDF
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2SK1053
Abstract: No abstract text available
Text: 2SK1053 2052B AP A d va n ce d P e rfo rm a n ce Series V Dss = 4 5 0 V N Channel Power MOSFET 3440 F e a tu re s • Low ON-state resistance. • Very high-speed switching. A bso lu te M axim um R atin g s at Ta=25°C Drain to Source Voltage Vdss Gate to Source Voltage
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2SK1053
2052B
10//S,
O-220A3
2011JN
X-6827
1412b
2SK1053
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PDF
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431i
Abstract: No abstract text available
Text: 2SK1922 A P A dvanced Perform ance Series 2052B V dss = 600V N Channel Power M O S F E T E 431I F e a tu re s • Low ON resistance. • Very high-speed switching. • High-speed diode (trr= 100ns). A b so lu te M axim um R atin g s a tT a = 25°C D rain to Source Voltage
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2SK1922
2052B
100ns)
431i
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PDF
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C085
Abstract: No abstract text available
Text: 2SK1923 AP A d va n ce d P e rfo rm a n c e Series 2052B DSS = 6 0 0 V N Channel Power M OSFET £4312 F e a tu re s • Low ON resistance. • Very high-speed switching. • H igh-speed diode (trr = 120ns).
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2SK1923
2052B
120ns)
VQQ-200V
TCl-220AB
42693TH
AX-9260
C085
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PDF
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diode 2u
Abstract: No abstract text available
Text: 2SK1052 2052B AP A d va n c e d P e rfo rm a n c e Series V dss = 4 5 0 V N Channel Power M OSFET '£'3439 F eatu res • Low ON-state resistance. •Very high-speed switching. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage
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2SK1052
2052B
10//S
diode 2u
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PDF
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LM 328 ic
Abstract: 2SK1053
Text: 2SK1053 AP A d va n c e d P e rfo rm a n ce Series 2052B V DSs= 4 5 0 V IM Channel Power M OSFET F e a tu r e s • Low O N -state resistance. • Very high-speed switching. A b s o lu te M a x im u m R a tin g s a t D rain to Source V oltage G ate to Source Voltage
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2SK1053
2052B
10//S,
LM 328 ic
2SK1053
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PDF
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2SK1456
Abstract: No abstract text available
Text: 2SK1456 2052B U H U ltra h ig h V o lta g e S eries VDSs = 9 0 0 V N Channel Power M OSFET X 3459 F e a tu re s • Low ON-state resistance. • Very high-speed switching. •Converters. A bso lu te M axim um R atin g s at Ta = 25°C Drain to Source Voltage
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2SK1456
2052B
6131JN
X-6826
2SK1456
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK1924 AP A d va n ce d P e rfo rm a n c e S eries V dss = 6 0 0 V 2052B N Channel Power M OSFET .E 43 i 3 F e a tu re s •Low ON resistance. • Very high-speed switching. ■High-speed diode ( tr r = 140ns). A b so lu te M ax im u m R a tin g s a tT a = 25°C
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2SK1924
2052B
140ns)
42893TH
AX-9260
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PDF
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2052B
Abstract: C345
Text: 2SK1442 2052B AP A d v a n c e d P e rfo rm a n c e Series V dss = 4 5 0 V N Channel Power M OSFET F e a tu re s • Low ON-state resistance. • Very high-speed switching. A b so lu te M axim um R a tin g s a t T a= 25°C Drain to Source Voltage V d ss
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2SK1442
2052B
2052B
C345
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PDF
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ST K 3567
Abstract: K 3567
Text: 2SK1429 AP A d va n c e d P e rfo rm a n ce Series V DSS= 1 0 0 V N Channel Power M OSFET •£■3567 Features • Low ON-state resistance. • Very high-speed switching. • Converters. Absolute Maximum Ratings at Ta = 25°C unit Drain to Source Voltage
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2SK1429
2052B
O-220A3
SC-46
7151JN
X-6618
ST K 3567
K 3567
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PDF
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AX-9832
Abstract: No abstract text available
Text: 2SK1921 AP A d va n ce d P e rfo rm a n c e Series V d 5s = 2 5 0 V N Channel Power M OSFET 4310 F eatures - Low ON resistance. • Very high-speed switching. • Low-voltage drive. bsolute M axim um R atings atTa=25°C Drain to Source Voltage V d ss
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2SK1921
51193TH
AX-9832
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PDF
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2SK1427
Abstract: 2052B
Text: O rd e rin g n u m b e r: E N 3 5 6 5 _ 2SK1427 No. 3565 N-Channel MOS Silicon FET Very High-Speed Switching Applications F eatures • Low ON-state resistance. • Very high-speed switching. • Converters. A bsolute M aximum R atings at Ta = 25°C
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EN3565
10/iS,
2SK1427
2052B
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PDF
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2SK1439
Abstract: 34423
Text: O rdering n u m b e r:E N 3 4 4 2 2SK1439 No. 3442 N-Channel MOS Silicon FET SAÈÊYO i Very High-Speed Switching Applications F eatu res • Low ON-state resistance. • Very high-speed switching. A bsolute M aximum R atings at Ta=25°C Drain to Source Voltage
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EN3442
2SK1439
10//S,
30VfVDs
34423
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PDF
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2SK1416
Abstract: 35542
Text: Ordering number : EN35554 _ 2SK1416 No.3554 N-Channel MOS Silicon FET Very High-Speed Switching Applications F eatures •Low ON-state resistance • Very high-speed switching • Converters. A bsolute M aximum R atings at Ta=25°C Drain to Source Voltage
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EN35554
2SK1416
10//S,
35542
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PDF
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