Untitled
Abstract: No abstract text available
Text: DCL12S0A0S20NFA FEATURES High efficiency: 93% @ 12Vin, 5V/20A out 92% @ 12Vin, 3.3V/20A out 90% @ 12Vin, 2.5V/20A out 89% @ 12Vin, 1.8V/20A out 83% @ 12Vin, 1.2V/20A out 79% @ 10Vin, 0.69V/20A out
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DCL12S0A0S20NFA
12Vin,
V/20A
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darlington npn 90v
Abstract: darlington transistor 90v transistor 20a MJ11013 MJ11014
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 90V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= 20A ·Low Collector Saturation Voltage: VCE (sat)= 3.0V(Max.)@ IC= 20A
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MJ11013
darlington npn 90v
darlington transistor 90v
transistor 20a
MJ11013
MJ11014
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transistor MJ11016
Abstract: MJ11016 transistor 20a MJ11015 darlington complementary 120v DARLINGTON 20A
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 120V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= 20A ·Low Collector Saturation Voltage: VCE (sat)= 3.0V(Max.)@ IC= 20A
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MJ11015
transistor MJ11016
MJ11016
transistor 20a
MJ11015
darlington complementary 120v
DARLINGTON 20A
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mj11011
Abstract: MJ11012 DARLINGTON 20A
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 60V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= 20A ·Low Collector Saturation Voltage: VCE (sat)= 3.0V(Max.)@ IC= 20A
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MJ11011
mj11011
MJ11012
DARLINGTON 20A
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transistor A106
Abstract: transistor PNP A105 transistor pnp a110 TRANSISTOR A107 a69 156 transistor A94 TRANSISTOR A114 TRANSISTOR a105 A107 capacitor TRANSISTOR A98 motorola mosfet
Text: N LM2639 Evaluation Board V.2 Test Procedures 4/9/99 The LM2639 evaluation board V.2 is designed to handle 20A output current under room temperature with no air flow. Efficiency is around 80% at 2V, 20A. With very little air flow, such as that provided by a typical ATX power supply Muffin fan, the board can handle 25A to 30A
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LM2639
T025A2
OT-23
SMDIP-10
SO-24
205Inductor
A6S-0104
transistor A106
transistor PNP A105
transistor pnp a110
TRANSISTOR A107
a69 156 transistor
A94 TRANSISTOR A114
TRANSISTOR a105
A107 capacitor
TRANSISTOR A98
motorola mosfet
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power transistor Ic 4A NPN smd
Abstract: transistor Ic 4A datasheet NPN smd smd 4A transistor power transistor Ic 4A datasheet NPN smd smd 4A data npn switching transistor Ic 5A transistor Ic 4A datasheet NPN FCX1047A 230NS rce marking
Text: Transistors SMD Type NPN Silicon Power Switching Transistor FCX1047A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 20 Amps. Extremely low saturation voltage E.g. 25mv Typ. Extremely low equivalent on-resistance.
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FCX1047A
Type000
50MHz
power transistor Ic 4A NPN smd
transistor Ic 4A datasheet NPN smd
smd 4A transistor
power transistor Ic 4A datasheet NPN smd
smd 4A data
npn switching transistor Ic 5A
transistor Ic 4A datasheet NPN
FCX1047A
230NS
rce marking
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high power transistor
Abstract: transistor 7333 Transistor 358 to3 2N3772 transistor 928 2N3772 APPLICATIONS transistor 358 to-3 358 transistor 2N3772A
Text: 2N3772 High Power Transistor High power NPN silicon power transistor. General-Purpose linear amplifier, series pass regulators and inductive switching applications. Features: • Low Collector-Emitter Saturation Voltage VCE sat = 4.0V (Maximum) at IC = 20A, IB = 4.0A.
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2N3772
high power transistor
transistor 7333
Transistor 358 to3
2N3772
transistor 928
2N3772 APPLICATIONS
transistor 358 to-3
358 transistor
2N3772A
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2SC3664
Abstract: EN2488 transistor 800V 1A
Text: Ordering number:EN2488 NPN Triple Diffused Planar Type Darlington Silicon Transistor 2SC3664 400V/20A Driver Applications Applications Package Dimensions • Induction cookers. · High-voltage, high power switching. unit:mm 2022A [2SC3664] Features · Fast speed adoption of MBIT process .
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EN2488
2SC3664
00V/20A
2SC3664]
2SC3664
EN2488
transistor 800V 1A
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN3716 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1511/2SD2285 30V/20A High-Current Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters. unit:mm 2039D Features [2SB1511/2SD2285] · Low collector-to-emitter saturation voltage :
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ENN3716
2SB1511/2SD2285
0V/20A
2039D
2SB1511/2SD2285]
2SB1511
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN2488 NPN Triple Diffused Planar Type Darlington Silicon Transistor 2SC3664 400V/20A Driver Applications Applications Package Dimensions • Induction cookers. · High-voltage, high power switching. unit:mm 2022A [2SC3664] Features · Fast speed adoption of MBIT process .
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EN2488
2SC3664
00V/20A
2SC3664]
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silicon transistor Vcbo 800 Vceo 1000 Ic 20A
Abstract: FCX1047A FCX1147A DSA003683
Text: SOT89 NPN SILICON POWER SWITCHING TRANSISTOR FCX1047A ISSSUE 2 - DECEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 20A Peak Pulse Current Excellent HFE Characteristics up to 20 Amps Extremely Low Saturation Voltage E.g. 25mv Typ. Extremely Low Equivalent On-resistance;
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FCX1047A
FCX1147A
100ms
silicon transistor Vcbo 800 Vceo 1000 Ic 20A
FCX1047A
FCX1147A
DSA003683
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2SC4060
Abstract: T20W45FX
Text: SHINDENGEN Switching Power Transistor FX Series OUTLINE DIMENSIONS 2SC4060 Case : MTO-3P T20W45FX Unit : mm 20A NPN RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SC4060
T20W45FX)
2SC4060
T20W45FX
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2SC4060
Abstract: T20W45FX
Text: SHINDENGEN Switching Power Transistor FX Series OUTLINE DIMENSIONS 2SC4060 Case : MTO-3P T20W45FX Unit : mm 20A NPN RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SC4060
T20W45FX)
2SC4060
T20W45FX
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EN3716
Abstract: 2SB1511
Text: Ordering number:EN3716 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1511/2SD2285 30V/20A High-Current Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters. unit:mm 2039A Features [2SB1511/2SD2285] · Low collector-to-emitter saturation voltage :
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EN3716
2SB1511/2SD2285
0V/20A
2SB1511/2SD2285]
2SB1511
EN3716
2SB1511
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MJ13333
Abstract: No abstract text available
Text: MJ13333 20A Power Transistors, 400V NPN silicon transistors are designed for high voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line-operated switchmode applications such as Switching Regulators, Inverters, Motor Controls,
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MJ13333
MJ13333
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NPN Transistor 1500V
Abstract: transistor tl 187 187 npn transistor NPN Transistor 1500V 20a NTE238
Text: NTE238 Silicon NPN Transistor Color TV, Horizontal Output Description: The NTE238 is a silicon NPN horizontal deflection transistor in a TO3 type package designed for use in deflection circuits. Features: D VCEX = 1500V D Safe Operating Area @ 50µs = 20A, 400V
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NTE238
NTE238
Cont00V,
NPN Transistor 1500V
transistor tl 187
187 npn transistor
NPN Transistor 1500V 20a
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green FZT1048A 17.5V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 17.5V • • BVCES > 50V • • IC = 5A High Continuous Collector Current • ICM = 20A Peak Pulse Current
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FZT1048A
OT223
500mA
MIL-STD-202,
J-STD-020
DS33182
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2N5552
Abstract: PT-3526 IC 3526 powertech
Text: GD0D3E1 7 1?E D "BIG IDEAS IN BIG POWER” • PowerTecn POIdERTECH INC 40 AMPERES PT-3526 T - l ^ - l S HIGH VOLTAGE SILICON NPN TRANSISTOR FEATURES V cE sat . 0.5V @20A h p E . 5 min. @40A V b E . 1.5V @20A
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PT-352Ã
150PC
2N5552
2N5552
PT-3526
IC 3526
powertech
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Untitled
Abstract: No abstract text available
Text: "BIG IDEAS IN BIG POWER ” • PowerTech SO AMPERES PT-3516 HIGH VOLTAGE SILICON NPN TRANSISTOR FEATURES V c E s a t . 0.5 @ 10 A h p E . 5 m in . @ 20A I s / B .
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PT-3516
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Untitled
Abstract: No abstract text available
Text: Ordering number: EN 2488 2SC3664 i NPN Triple Diffused Planar Darlington Silicon Transistor i 400V/20A Driver Applications SANYO Applications . Induction cookers . High-voltage, high-power switching Features . Fast speed adoption of MBIT process . High breakdown voltage (VCBO=800V)
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2SC3664
00V/20A
T03PB
3257TA,
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Untitled
Abstract: No abstract text available
Text: “BIG IDEAS IN BIG POWER ” • ■ ■ PowerTech ■ 40 AMPERES PT-3526 HIGH VOLTAGE SILICON NPN TRANSISTOR FEATURES V c E s a t . 0.5V @ 20A h p E . 5 m in. @ 4 0 A I s / B .
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PT-3526
300jusec
100/iA
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EN3716
Abstract: 2039A 2SB1511
Text: Ordering num ber: EN3716 2SB1511/2SD2285 PNP/NPN Epitaxial Planar Silicon Transistors No.3716 30V/20A Switching Applications Qm< o Applications • Relay drivers, high-speed inverters, converters. Features • Low collector-to-emitter saturation voltage : VcE sat = ••0.5V(PNP), 0.4VCNPN) max.
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EN3716
0V/20A
2SB1511/2SD2285
2SB1511
5111MH,
2SB1511/2SD2285
EN3716
2039A
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t6060
Abstract: T-6060
Text: OPTEK TECHNOLOGY INC 40E d • L ? ciasaG oGG^ai a ta ■ otk I c iv Product Bulletin OTC1015 August 1990_ NPN Power Darlington Die "T'33 ^ Types OTC1015, OTC6030, OTC6050 450V, 20A Schematic Note 7 Base 1 o i - K Q1
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OTC1015
OTC1015,
OTC6030,
OTC6050
OTC6030
t6060
T-6060
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2sd1525 toshiba
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD1525 INDUSTRIAL APPLICATION Unit in nan HIGH CURRENT SWITCHING APPLICATIONS. FEATURES: . High Collector Current : Ic=30A . High DC Current Gain : hFE=1000(Min.) (Vc e = 5V, Ic=20A) . Monolithic Construction with Built-In Base-Emitter
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2SD1525
2sd1525 toshiba
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