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    20DEG. Price and Stock

    Amphenol Corporation MLV-L20D-EGBD-N

    Pressure Sensor 20mV ?20 inH2O Differential 8-Pin DIP - Rail/Tube (Alt: MLV-L20D-EGBD-N)
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    Avnet Americas MLV-L20D-EGBD-N Tube 10
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    Amphenol Corporation MLV-L20D-EGNS-N

    Pressure Sensor 20mV ?20 inH2O Differential 4-Pin SIP - Rail/Tube (Alt: MLV-L20D-EGNS-N)
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    Avnet Americas MLV-L20D-EGNS-N Tube 10
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    SPC Multicomp MP-12 120 DEG C

    Thermal Protector, 15A, 125Vac; Product Range:Mp Thermal Circuit Breakers Series; Current Rating:15A; No. Of Poles:-; Voltage Rating Vdc:-; Voltage Rating Vac:125V; Circuit Breaker Mounting:Snap In, Panel Rohs Compliant: Yes |Multicomp Pro MP-12 120 DEG C
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    Newark MP-12 120 DEG C Bulk 1,000 1
    • 1 $2.48
    • 10 $2.23
    • 100 $1.68
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    All Sensors Corporation MLV-L20D-EGBL-N

    Mlv 20 Inch 1 Ulp 1P Barb Dip |Amphenol All Sensors MLV-L20D-EGBL-N
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    Newark MLV-L20D-EGBL-N Bulk 1
    • 1 $83.46
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    All Sensors Corporation MLV-L20D-EGNS-N

    Mlv Lx Millivolt S-Package 1 Port |Amphenol All Sensors MLV-L20D-EGNS-N
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    Newark MLV-L20D-EGNS-N Bulk 10
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    Find more 20DEG. price and stock on Findchips.com

    20DEG. Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GLC2518T4R7M

    Abstract: GLC2518T220K GLC2518 TDK 47uh GLC2518T100K GLC2518T470K GLC2518T4 GLC2518T101K GLC2518T1R0M GLC2518T2R2M
    Text: Electrical Characteristics [GLC2518Type] Inductance ITEM Rdc[ohm] Idc[mA] & L:10%Down L:20%Down temp. has to 20Deg.C Tolerance Max. Max. Max. GLC2518T1R0M 1.0µH±20% 0.08±30% 850 - 980 GLC2518T2R2M 2.2µH±20% 0.13±30% 650 - 750 GLC2518T4R7M 4.7µH±20%


    Original     		PDF GLC2518Type] 20Deg GLC2518T1R0M GLC2518T2R2M GLC2518T4R7M GLC2518T100K GLC2518T220K GLC2518T470K GLC2518T101K Electri2518T4R7M GLC2518T220K GLC2518 TDK 47uh GLC2518T100K GLC2518T470K GLC2518T4 GLC2518T101K

    LR82A

    Abstract: No abstract text available
    Text: SMD Type Large-Current Power Inductors MPLC Series [RoHS [RoHS Compliant] Compliant] ･ Precautions see page 83 Inductance at 100kHz, 1mA （ H） 1.0±20% 1.5±20% 2.2±20% 3.3±20% 4.7±20% 1.0±20% 1.5±20% 2.2±20% 3.3±20% 4.7±20% Model MPLC0730L1R0


    Original     		PDF 100kHz, MPLC0730L1R0 MPLC0730L1R5 MPLC0730L2R2 MPLC0730L3R3 MPLC0730L4R7 MPLC1040L1R0 MPLC1040L1R5 MPLC1040L2R2 MPLC1040L3R3 LR82A

    VD F1 SMD

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm


    Original     		PDF MGF0921A MGF0921A 33dBm 17dBm 500mA 50pcs) VD F1 SMD

    SMM5845V1

    Abstract: MMIC marking code U
    Text: SMM5845V1B K-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. High Linear Gain: GL=22.0dB (typ.) Broad Band:21.2 to 23.6GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION The SMM5845V1B is a MMIC amplifier that contains a four-stage


    Original     		PDF SMM5845V1B 50ohm SMM5845V1B SMM5845V1 MMIC marking code U

    MGF0951P

    Abstract: No abstract text available
    Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 25 th May. 2005 SUBJECT: RF characteristics data of MGF0951P for Freq.=2.5-2.7GHz band SUMMARY: This application note show the RF characteristics data of MGF0951P － － Sample history:


    Original     		PDF MGF0951P MGF0951P 25deg 61GHz -10MHz) 10MHz)

    42AA

    Abstract: MGF0952P mgf09
    Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0952P for Freq.=2.5-2.7GHz band SUMMARY: This application note show the RF characteristics data of MGF0952P － － Sample history:


    Original     		PDF MGF0952P MGF0952P 25deg 1000pF 330uF 42AA mgf09

    MGF0951P

    Abstract: No abstract text available
    Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 25 th May. 2005 SUBJECT: RF characteristics data of MGF0951P for Freq.=2.3-2.4GHz band SUMMARY: This application note show the RF characteristics data of MGF0951P － － Sample history:


    Original     		PDF MGF0951P MGF0951P 35GHz 25deg

    c id

    Abstract: 42AA MGF0952P
    Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0952P for Freq.=2.3-2.4GHz band SUMMARY: This application note show the RF characteristics data of MGF0952P － － Sample history:


    Original     		PDF MGF0952P MGF0952P 35GHz 25deg c id 42AA

    Untitled

    Abstract: No abstract text available
    Text: VCO specification preliminary 1/2 1.APPLICATION LAN 2.PART No. SV2.5WL0001 3.DIMENSIONS G G OUT SV2.5 WL0001 ● SE 371 VC G G VB Max 2.0 G SIDE VIEW 7.8 OUT : RF OUTPUT VB : POWER SUPPLY VC : CONTROL VOLT. G : GROUND NOTE:There is no mark of terminals on the case.


    Original     		PDF 5WL0001 WL0001 5WL0001 25Deg 50ohm 2SC3624A 100pF

    SV259

    Abstract: SV259PH0010
    Text: VCO 1.APPLICATION PHS specification preliminary 1/2 IF 2.PART No. SV259PH0010 3.DIMENSIONS NC G OUT SV259 PH0010 ● SE 371 G VB max3.5 VC SIDE VIEW 10.0 OUT : RF OUTPUT VB : POWER SUPPLY VC : CONTROL VOLT. G : GROUND NC : GROUND NOTE : There is no mark of


    Original     		PDF SV259PH0010 SV259 PH0010 SV259 SV259PH0010 25Deg 50ohm 2SC3624A 100pF

    c5201

    Abstract: VOLTAGE DEPENDENT RESISTOR Resistor R002 R003
    Text: Subject Spec. No. 151-RJM-E01MM Low Resistance Value Chip Resistor Part No. ERJM1W 10 - 1 1.Dimension ERJM1WT type ERJM1WS type a a W W L L T 1 3) 2) T 1) 4) 1) Protective Coating 2) Resistive Element Resin Alloy Metal L ERJM1WT ERJM1WS 3) Terminal Metal


    Original     		PDF 151-RJM-E01MM c5201 VOLTAGE DEPENDENT RESISTOR Resistor R002 R003

    60Ghz

    Abstract: MGF0915A a4013
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm


    Original     		PDF MGF0915A MGF0915A 23dBm 50pcs) 60Ghz a4013

    4 pin 9v

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0952P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=36.5dBm TYP. @f=2.15GHz,Pin=25Bm


    Original     		PDF MGF0952P MGF0952P 15GHz 15GHz 25dBm 700mA 4 pin 9v

    balun 50 ohm 100 ohm

    Abstract: CBA4711 E507 LTCC X band
    Text: LTCC BALUN PRODUCTS 5 GHz Multilayer Ceramic Balun 2012 29th 2012/5GHz 50-100ohm Multilayer Ceramic Balun BY / 製定者 CHECK ` S.U.Hong C.T. Lee SUPER / 原圖編號 J.S. Hsieh , Dec. 2004 Rev.3 CBA4711714015004K, TLL.SH / 共頁 12 DATE / 日期 PAGE/


    Original     		PDF 2012/5GHz 50-100ohm CBA4711714015004K, 11a/b/g balun 50 ohm 100 ohm CBA4711 E507 LTCC X band

    CFL4111

    Abstract: LTCC X band LTCC GHz
    Text: LTCC FILTER PRODUCTS 2.45 GHz Multilayer Ceramic Band Pass Filter 2520 7th, Jul.2004 Rev.1 2520/2.45GHz Multilayer Ceramic Band Pass Filter BY / 製定者 CHECK ` J.S. Hsieh SUPER / 原圖編號 C.T. Lee CFL4111 713 05 2453K TLL.SH/ 共頁 10 DATE / 日期


    Original     		PDF 45GHz CFL4111 2453K 11b/g at-40 960MHz 1785MHz LTCC X band LTCC GHz

    0951P

    Abstract: MGF0951P 60Ghz mitsubishi mgf
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0951P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=2.15GHz,Pin=20dBm


    Original     		PDF MGF0951P MGF0951P 31dBm 15GHz 20dBm 15GHz 200mA 0951P 60Ghz mitsubishi mgf

    MPLCG0530

    Abstract: nec 2012 MPLCG0530L1R5 50/PLT-02, NEC Tokin
    Text: 03 Vol. Large-Current Power Inductor MPLCG Series [RoHS Compliant] Inductance ȐH at 100kHz Model DC resistance RDC(mȑ)max. Irms ※1 (Ref.) Rated Current(A) Isat ※2 (Ref.) MPLCG0530LR22 0.22±20% 3.7 14.1 10.2 MPLCG0530LR33 0.33±20% 7.3 10.3 8.9 MPLCG0530L1R0


    Original     		PDF 100kHz MPLCG0530LR22 MPLCG0530LR33 MPLCG0530L1R0 MPLCG0530L1R5 MPLCG0530L2R2 MPLCG0630L1R0 MPLCG0630L1R5 MPLCG0630L2R2 MPLCG0630L3R3 MPLCG0530 nec 2012 50/PLT-02, NEC Tokin

    MGF0921A

    Abstract: No abstract text available
    Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0921A for Freq.=1.85-1.95GHz band SUMMARY: This application note show the RF characteristics data of MGF0921A － － Sample history:


    Original     		PDF MGF0921A 95GHz MGF0921A 25deg data10V -900KHz) 900KHz)

    SV245

    Abstract: No abstract text available
    Text: VCO specification preliminary 1/2 1.APPLICATION RF-ID Japan 2.PART No. SV2.45ER0002 3.DIMENSIONS G G OUT SV2.45 ER0002 ● SE 371 VC G G VB Max 2.0 G SIDE VIEW 7.8 OUT : RF OUTPUT VB : POWER SUPPLY VC : CONTROL VOLT. G : GROUND NOTE:There is no mark of terminals on the case.


    Original     		PDF 45ER0002 ER0002 45ER0002 25Deg 50ohm 2SC3624A 100pF SV245

    lcd inverter 7 pin diagram

    Abstract: sx19v001 inverter circuit diagram Wiring Diagram of CN1 in inverter FLUKE 75 sx19v001 hitachi inverter board LCD cfl circuit diagram cfl lamp inverter circuit fluke 75 meter
    Text: M/S HEU DATE: 31.May.2007 Design Department Ome Manufacturing Operation Hitachi Lighting,Ltd 16-2,shinmachi 6-chome,Ome-Shi Tokyo 198-8611,JAPAN TEL.0428-31-1204 FAX.0428-31-1224 CUSTOMER’S ACCEPTANCE SPECIFICATIONS (Backlight Inverters for cold cathode


    Original     		PDF INVC821 lcd inverter 7 pin diagram sx19v001 inverter circuit diagram Wiring Diagram of CN1 in inverter FLUKE 75 sx19v001 hitachi inverter board LCD cfl circuit diagram cfl lamp inverter circuit fluke 75 meter

    cfl Inverter

    Abstract: fluorescent wiring diagram FLUORESCENT LIGHTING Inverter lcd inverter 7 pin diagram INVC818 28w cfl inverter board LCD cfl circuit diagram inverter dc to ac wind inverter
    Text: M/S HEU DATE: 31.May.2007 Design Department Ome Manufacturing Operation Hitachi Lighting,Ltd 16-2,shinmachi 6-chome,Ome-Shi Tokyo 198-8611,JAPAN TEL.0428-31-1204 FAX.0428-31-1224 CUSTOMER’S ACCEPTANCE SPECIFICATIONS (Backlight Inverters for cold cathode


    Original     		PDF INVC818 cfl Inverter fluorescent wiring diagram FLUORESCENT LIGHTING Inverter lcd inverter 7 pin diagram 28w cfl inverter board LCD cfl circuit diagram inverter dc to ac wind inverter

    MGF0915A

    Abstract: No abstract text available
    Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 5 th Apr. 2005 SUBJECT: RF characteristics data of MGF0915A for Freq.=1.85-1.95GHz band SUMMARY: This application note show the RF characteristics data of MGF0915.A － － Sample history:


    Original     		PDF MGF0915A 95GHz MGF0915 MGF0915A 25deg -900KHz) 900KHz) -600KHz)

    MGF0951P

    Abstract: dsae001680
    Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0951P for Freq.=2.3-2.4GHz band SUMMARY: This application note show the RF characteristics data of MGF0951P － － Sample history:


    Original     		PDF MGF0951P MGF0951P 35GHz 25deg dsae001680

    MGF0952P

    Abstract: No abstract text available
    Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 25 th May. 2005 SUBJECT: RF characteristics data of MGF0952P for Freq.=2.3-2.4GHz band SUMMARY: This application note show the RF characteristics data of MGF0952P － － Sample history:


    Original     		PDF MGF0952P MGF0952P 35GHz 25deg