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    MGF09 Search Results

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    MGF09 Price and Stock

    Mitsubishi Electric MGF0951P

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MGF0951P 1,388
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    Panasonic Electronic Components MGF0906B

    S BAND, GAAS, N-CHANNEL, RF POWER, JFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MGF0906B 15
    • 1 $22.491
    • 10 $19.992
    • 100 $18.4926
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    Mitsubishi Electric MGF0904A01

    RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
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    ComSIT USA MGF0904A01 1,231
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    Mitsubishi Electric MGF0906B

    L, S BAND POWER GAAS FET RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA MGF0906B 525
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    Mitsubishi Electric MGF0905A01

    RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
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    ComSIT USA MGF0905A01 410
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    Find more MGF09 price and stock on Findchips.com

    MGF09 Datasheets (51)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MGF0904 Mitsubishi L,S BAND POWER GaAs FET Scan PDF
    MGF0904 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    MGF0904 Unknown FET Data Book Scan PDF
    MGF09044A Mitsubishi L,S BAND POWER GaAs FET Scan PDF
    MGF0904A Mitsubishi L,S BAND POWER GaAs FET Original PDF
    MGF0904A Mitsubishi MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET Scan PDF
    MGF0904A Mitsubishi L, S Band Power GaAs FET Scan PDF
    MGF0905 Mitsubishi L,S BAND POWER GaAs FET Scan PDF
    MGF0905 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    MGF0905 Unknown FET Data Book Scan PDF
    MGF0905A Mitsubishi L,S BAND POWER GaAs FET Original PDF
    MGF0905A Mitsubishi MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET Scan PDF
    MGF0906 Mitsubishi L,S BAND POWER GaAs FET Scan PDF
    MGF0906B Mitsubishi L,S BAND POWER GaAs FET Original PDF
    MGF0906B Mitsubishi MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET Scan PDF
    MGF0907 Mitsubishi L,S BAND POWER GaAs FET Scan PDF
    MGF0907B Mitsubishi L,S BAND POWER GaAs FET Original PDF
    MGF0907B Mitsubishi MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET Scan PDF
    MGF0909 Mitsubishi L,S BAND POWER GaAs FET Original PDF
    MGF0909A Mitsubishi TRANS JFET N-CH 10V 5000MA 3GF-7 Original PDF

    MGF09 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5687 general electric

    Abstract: mitsubishi 1183 MGF0912A
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0912A L & S BAND GaAs FET [ non – matched ] DESCRIPTION OUTLINE DRAWING Unit : millimeters The MGF0912A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES ① 2MIN • High output power


    Original     		PDF MGF0912A MGF0912A 33dBm June/2004 5687 general electric mitsubishi 1183

    MGF0916A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm TYP. @f=1.9GHz,Pin=5dBm


    Original     		PDF MGF0916A MGF0916A 23dBm 100mA

    mgf0911A

    Abstract: S 1149 212 41dBm
    Text: MITSUBISHI SEMICONDUCTOR 〈GaAs FET〉 MGF0911A L, S BAND POWER GaAs FET DESCRIPTION The MGF0911A, GaAs FET with an N-channel schottky gate, is OUTLINE DRAWING designed for use in UHF band amplifiers. Unit:millimeters 17.5 FEATURES 1 1.0 • Class A operation


    Original     		PDF MGF0911A MGF0911A, 41dBm GF-21 June/2004 mgf0911A S 1149 212

    MGF0920A

    Abstract: IM335 pt 11400
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0920A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=32dBm TYP. @f=1.9GHz,Pin=15dBm


    Original     		PDF MGF0920A MGF0920A 32dBm 15dBm 400mA 50pcs) t-155 IM335 pt 11400

    mitsubishi

    Abstract: MGF0904 MGF0904A mitsubishi electric Band Power GaAs FET
    Text: MITSUBISHI ELECTRIC June/2004 MITSUBISHI ELECTRIC June/2004 MITSUBISHI ELECTRIC June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0904A L, S BAND POWER GaAs FET MITSUBISHI ELECTRIC June/2004


    Original     		PDF June/2004 MGF0904A mitsubishi MGF0904 MGF0904A mitsubishi electric Band Power GaAs FET

    SCL 1058

    Abstract: GP145 IDS800 MGF0915A fet GP145 3268
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm


    Original     		PDF MGF0915A MGF0915A 23dBm 50pcs) SCL 1058 GP145 IDS800 fet GP145 3268

    VD F1 SMD

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm


    Original     		PDF MGF0921A MGF0921A 33dBm 17dBm 500mA 50pcs) VD F1 SMD

    MGF0915A

    Abstract: SCL 1058
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm


    Original     		PDF MGF0915A MGF0915A 23dBm 50pcs) SCL 1058

    SMD GP 113

    Abstract: MGF0921A
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm


    Original     		PDF MGF0921A MGF0921A 33dBm 17dBm 500mA 50pcs) SMD GP 113

    fet 1412

    Abstract: mgf0911A
    Text: MITSUBISHI SEMICONDUCTOR 〈GaAs FET〉 MGF0911A L, S BAND POWER GaAs FET DESCRIPTION The MGF0911A, GaAs FET with an N-channel schottky gate, is OUTLINE DRAWING designed for use in UHF band amplifiers. Unit:millimeters 17.5 FEATURES 1 1.0 • Class A operation


    Original     		PDF MGF0911A MGF0911A, 41dBm GF-21 fet 1412 mgf0911A

    MGF0917A

    Abstract: gp 801 pt 11400
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0917A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=24dBm TYP. @f=1.9GHz,Pin=4dBm


    Original     		PDF MGF0917A MGF0917A 24dBm 50pcs) gp 801 pt 11400

    MGF0951P

    Abstract: No abstract text available
    Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 25 th May. 2005 SUBJECT: RF characteristics data of MGF0951P for Freq.=2.5-2.7GHz band SUMMARY: This application note show the RF characteristics data of MGF0951P － － Sample history:


    Original     		PDF MGF0951P MGF0951P 25deg 61GHz -10MHz) 10MHz)

    42AA

    Abstract: MGF0952P mgf09
    Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0952P for Freq.=2.5-2.7GHz band SUMMARY: This application note show the RF characteristics data of MGF0952P － － Sample history:


    Original     		PDF MGF0952P MGF0952P 25deg 1000pF 330uF 42AA mgf09

    MGF0951P

    Abstract: No abstract text available
    Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 25 th May. 2005 SUBJECT: RF characteristics data of MGF0951P for Freq.=2.3-2.4GHz band SUMMARY: This application note show the RF characteristics data of MGF0951P － － Sample history:


    Original     		PDF MGF0951P MGF0951P 35GHz 25deg

    12W SMD

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm(TYP.) @f=2.15GHz,Pin=20dBm


    Original     		PDF MGF0951P MGF0951P 31dBm 15GHz 20dBm 15GHz 200mA 12W SMD

    RG1000

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF0953P L & S BAND / 0.6W SMD / Plastic Mold non - matched DESCRIPTION The MGF0953P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=28.0dBm(TYP.) @f=2.15GHz,Pin=10dBm


    Original     		PDF MGF0953P MGF0953P 15GHz 10dBm 15GHz RG1000

    Untitled

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF0912A L & S BAND / 14W non - matched DESCRIPTION OUTLINE DRAWING The MGF0912A, GaAs FET with an N-channel schottky gate, is designed for use in L/S band amplifiers. Unit : m illim eters FEATURES ① 4.4+0/-0.3


    Original     		PDF MGF0912A MGF0912A, 33dBm

    mgf0911A

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF0911A L & S BAND / 12W non - matched DESCRIPTION The MGF0911A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES • Class A operation  High output power P1dB=41.0dBm(TYP.) @f=2.3GHz


    Original     		PDF MGF0911A MGF0911A, mgf0911A

    Untitled

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF0919A L & S BAND / 1W SMD non - matched DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm


    Original     		PDF MGF0919A MGF0919A 30dBm 12dBm 300mA 50pcs)

    Untitled

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF0913A L & S BAND / 1.2W SMD non - matched DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm


    Original     		PDF MGF0913A MGF0913A 31dBm 18dBm 200mA 50pcs)

    Untitled

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm(TYP.) @f=2.15GHz,Pin=20dBm


    Original     		PDF MGF0951P MGF0951P 31dBm 15GHz 20dBm 15GHz 200mA

    33dBm

    Abstract: MGF0912A CD4540
    Text: MITSUBISHI SEMICONDUCTOFkGaAs FET> MGF0912AI L & S BAND Ga As FET [ non - matched ] DESCRIPTION OUTLINE DRAWNG Unit : millimeters The MGF0912A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power


    OCR Scan     		PDF MGF0912A MGF0912A 33dBm 33dBm CD4540

    F0904A

    Abstract: MGF0904A
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0904A L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 0 9 0 4 A . GaAs F E T w ith an N-channel s c h o ttk y U n it:m illim e te r s m c h e s l gate, is designed fo r use in U H F band am plifiers.


    OCR Scan     		PDF MGF0904A 15dBm 15dBm F0904A MGF0904A

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0905A L, S BAND POW ER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 0 9 0 5 A , GaAs FET with an N-channel schottky U n it: m illim eters inches gate, is designed for use in U H F band amplifiers. FEATURES • High output power


    OCR Scan     		PDF MGF0905A 34dBm 65GHz, 26dBm