20JUL09 Search Results

Contextual Info: New Product Si3456DDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 6.3 0.050 at VGS = 4.5 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si4559EY Vishay Siliconix N- and P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 RDS(on) (Ω) ID (A) 0.055 at VGS = 10 V ± 4.5 0.075 at VGS = 4.5 V ± 3.9 0.120 at VGS = - 10 V ± 3.1 0.150 at VGS = - 4.5 V

SQ3456EV

Abstract: SQ3456EV-T1-GE3
Contextual Info: SQ3456EV Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd

si5458

Contextual Info: New Product Si5458DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d, e 0.041 at VGS = 10 V 6 0.051 at VGS = 4.5 V 6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si4948EY

Contextual Info: Si4948EY Vishay Siliconix Dual P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.120 at VGS = - 10 V ± 3.1 0.150 at VGS = - 4.5 V ± 2.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

Si4804CDY

Abstract: Si4804BDY-T1-E3 Si4804BDY Si4804CDY-T1-GE3
Contextual Info: Specification Comparison Vishay Siliconix Si4804CDY vs. Si4804BDY Description: Package: Pin Out: Dual N-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4804CDY-T1-GE3 replaces Si4804BDY-T1-E3 Si4804CDY-T1-GE3 replaces Si4804BDY-T1-E3

TSOP 173B

Contextual Info: Si3493BDV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0275 at VGS = - 4.5 V - 8.0a 0.034 at VGS = - 2.5 V - 7.9 0.045 at VGS = - 1.8 V - 2.2 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: New Product Si5906DU Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.031 at VGS = 10 V 6 0.040 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

N4700

Abstract: 615R100GATD10
Contextual Info: 615R Series Vishay Cera-Mite High Voltage Ceramic Disc Capacitors 10 kVDC and 15 kVDC FEATURES Fig. 1 • Low losses 1.250" min. 32 mm LO • High capacitance in small sizes • High stability D max. • Radial leads LS Tinned Copper Leads Ø T max. 0.187" (4.8 mm)

Contextual Info: New Product SiE862DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET • Ultra Low Thermal Resistance Using Top-Exposed PolarPAK® Package for

Contextual Info: Si3493BDV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0275 at VGS = - 4.5 V - 8.0a 0.034 at VGS = - 2.5 V - 7.9 0.045 at VGS = - 1.8 V - 2.2 • Halogen-free According to IEC 61249-2-21 Definition

IEC 60998

Abstract: 20AWG FTEC174 60512-1-1 Flat Ribbon Connector - 60 IDC
Contextual Info: 108-19388 Product Specification Rev. C GEL CONNECTOR; IDC / WIRE TO WIRE GEL CONNECTOR IDC / WIRE TO WIRE - NOT IN SCALE - C B A Modified P/N page2 and 3.2 req. value (page4) PPo 06 Aug 10 EDe 9aug10 Update after qualification EDe 8Feb10 OLe 8Feb10 Revised

Contextual Info: BYS12-90 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Very low switching losses

Contextual Info: FSK-21A-4 Product Details - Tyco Electronics ● Resources ❍ ❍ ❍ ❍ ❍ ● My Account ❍ ❍ ❍ ❍ ❍ ● Check Product Compliance Cross Reference Products Compare Multiple Products Check Distributor Inventory Find Authorized Distributors Manage My Part Lists

4600 mosfet

Abstract: s0913 SUD50P10-43L-E3
Contextual Info: SUD50P10-43L Vishay Siliconix P-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.043 at VGS = - 10 V - 37 0.048 at VGS = - 4.5 V - 35 VDS (V) - 100 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.)

SI9948AEY-T1-E3

Abstract: Si9948AEY SI9948AEY-T1
Contextual Info: Si9948AEY Vishay Siliconix Dual P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.17 at VGS = - 10 V ± 2.6 0.26 at VGS = - 4.5 V ± 2.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

Si7405BDN

Abstract: Si7405DN Si7405DN-T1
Contextual Info: Specification Comparison Vishay Siliconix Si7405BDN vs. Si7405DN Description: Package: Pin Out: P-Channel, 12-V D-S MOSFET PowerPAK 1212-8 Identical Part Number Replacements: Si7405BDN-T1-E3 or Si7405BDN-T1-GE3 replaces Si7405DN-T1-E3 Si7405BDN-T1-E3 or Si7405BDN-T1-GE3 replaces Si7405DN-T1

Si2308BDS

Abstract: SI2308DS-T1-GE3 si2308bds-t1-ge3 si2308 SI2308BDS-T1-E3 SI2308DS Si2308DS-T1-E3 Si2308DS-T1 65178 VISHAY SI2308BDS
Contextual Info: Specification Comparison Vishay Siliconix Si2308BDS vs. Si2308DS Description: N-Channel, 60-V D-S MOSFET Package: SOT-23 Pin Out: Identical Part Number Replacements: Si2308BDS-T1-GE3 replaces Si2308DS-T1-GE3 Si2308BDS-T1-E3 or Si2308BDS-T1-GE3 replaces Si2308DS-T1-E3

Si4559ADY

Abstract: Si4559EY Si4559ADY-T1-GE3 Si4459EY-T1-GE3 si4559ey-t1-e3
Contextual Info: Specification Comparison Vishay Siliconix Si4559ADY vs. Si4559EY Description: Package: Pin Out: N- and P-Channel, 60-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4559ADY-T1-GE3 replaces Si4459EY-T1-GE3 Si4559ADY-T1-E3 or Si4559ADY-T1-GE3 replaces Si4559EY-T1-E3

Contextual Info: SQ3442EV Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 4.5 V 0.057 RDS(on) (Ω) at VGS = 2.5 V 0.090 ID (A) 3.0 Configuration Single TSOP-6 Top V iew 3 mm • Halogen-free According to IEC 61249-2-21

SI4948EY-T1-E3

Contextual Info: Si4948EY Vishay Siliconix Dual P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.120 at VGS = - 10 V ± 3.1 0.150 at VGS = - 4.5 V ± 2.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

si3483dvt1e3

Abstract: Si3483DV Si3483DV-T1-E3 Si3483CDV Si3483CDV-T1-E3 Si3483CDV-T1-GE3
Contextual Info: Specification Comparison Vishay Siliconix Si3483CDV vs. Si3483DV Description: Package: Pin Out: P-Channel, 30-V D-S MOSFET TSOP-6 Identical Part Number Replacements: Si3483CDV-T1-E3 or Si3483CDV-T1-GE3 replaces Si3483DV-T1-E3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Si3473DV

Abstract: Si3473DV-T1 Si3473DV-T1-E3 SI3473DVT1E3
Contextual Info: Specification Comparison Vishay Siliconix Si3473CDV vs. Si3473DV Description: Package: Pin Out: P-Channel, 12-V D-S MOSFET TSOP-6 Identical Part Number Replacements: Si3473CDV-T1-E3 or Si3473CDV-T1-GE3 replaces Si3473DV-T1-E3 Si3473CDV-T1-E3 or Si3473CDV-T1-GE3 replaces Si3473DV-T1

LT1074HVCT equivalent

Abstract: LT1076 application step down LT1074 24v C1042 LT1074 lt1074hvit
Contextual Info: LT1074/LT1076 Step-Down Switching Regulator ponents, are included on the chip. The topology is a classic positive “buck” configuration but several design innovations allow this device to be used as a positive-to-negative converter, a negative boost converter, and as a flyback