Untitled
Abstract: No abstract text available
Text: New Product Si3456DDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 6.3 0.050 at VGS = 4.5 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si3456DDV
2002/95/EC
Si3456DDV-T1-E3
Si3456DDV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si4559EY Vishay Siliconix N- and P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 RDS(on) (Ω) ID (A) 0.055 at VGS = 10 V ± 4.5 0.075 at VGS = 4.5 V ± 3.9 0.120 at VGS = - 10 V ± 3.1 0.150 at VGS = - 4.5 V
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Si4559EY
2002/95/EC
Si4559EY-T1-E3
Si4559EY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SQ3456EV
Abstract: SQ3456EV-T1-GE3
Text: SQ3456EV Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd
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SQ3456EV
2002/95/EC
AEC-Q101
SQ3456EV-T1-GE3
18-Jul-08
SQ3456EV
SQ3456EV-T1-GE3
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si5458
Abstract: No abstract text available
Text: New Product Si5458DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d, e 0.041 at VGS = 10 V 6 0.051 at VGS = 4.5 V 6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si5458DU
2002/95/EC
Si5458DU-T1-GE3
18-Jul-08
si5458
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Si4948EY
Abstract: No abstract text available
Text: Si4948EY Vishay Siliconix Dual P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.120 at VGS = - 10 V ± 3.1 0.150 at VGS = - 4.5 V ± 2.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
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Si4948EY
2002/95/EC
Si4948EY-T1-E3
Si4948EY-T1-GE3
18-Jul-08
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Si4804CDY
Abstract: Si4804BDY-T1-E3 Si4804BDY Si4804CDY-T1-GE3
Text: Specification Comparison Vishay Siliconix Si4804CDY vs. Si4804BDY Description: Package: Pin Out: Dual N-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4804CDY-T1-GE3 replaces Si4804BDY-T1-E3 Si4804CDY-T1-GE3 replaces Si4804BDY-T1-E3
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Si4804CDY
Si4804BDY
Si4804CDY-T1-GE3
Si4804BDY-T1-E3
20-Jul-09
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TSOP 173B
Abstract: No abstract text available
Text: Si3493BDV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0275 at VGS = - 4.5 V - 8.0a 0.034 at VGS = - 2.5 V - 7.9 0.045 at VGS = - 1.8 V - 2.2 • Halogen-free According to IEC 61249-2-21 Definition
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Si3493BDV
2002/95/EC
Si3493BDV-T1-E3
Si3493BDV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
TSOP 173B
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Untitled
Abstract: No abstract text available
Text: New Product Si5906DU Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.031 at VGS = 10 V 6 0.040 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si5906DU
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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N4700
Abstract: 615R100GATD10
Text: 615R Series Vishay Cera-Mite High Voltage Ceramic Disc Capacitors 10 kVDC and 15 kVDC FEATURES Fig. 1 • Low losses 1.250" min. 32 mm LO • High capacitance in small sizes • High stability D max. • Radial leads LS Tinned Copper Leads Ø T max. 0.187" (4.8 mm)
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2002/95/EC
11-Mar-11
N4700
615R100GATD10
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Untitled
Abstract: No abstract text available
Text: New Product SiE862DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET • Ultra Low Thermal Resistance Using Top-Exposed PolarPAK® Package for
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SiE862DF
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si3493BDV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0275 at VGS = - 4.5 V - 8.0a 0.034 at VGS = - 2.5 V - 7.9 0.045 at VGS = - 1.8 V - 2.2 • Halogen-free According to IEC 61249-2-21 Definition
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Si3493BDV
2002/95/EC
Si3493BDV-T1-E3
Si3493BDV-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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IEC 60998
Abstract: 20AWG FTEC174 60512-1-1 Flat Ribbon Connector - 60 IDC
Text: 108-19388 Product Specification Rev. C GEL CONNECTOR; IDC / WIRE TO WIRE GEL CONNECTOR IDC / WIRE TO WIRE - NOT IN SCALE - C B A Modified P/N page2 and 3.2 req. value (page4) PPo 06 Aug 10 EDe 9aug10 Update after qualification EDe 8Feb10 OLe 8Feb10 Revised
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9aug10
8Feb10
20jul09
FTEC174
29jul09
IEC 60998
20AWG
60512-1-1
Flat Ribbon Connector - 60 IDC
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Untitled
Abstract: No abstract text available
Text: BYS12-90 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Very low switching losses
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BYS12-90
J-STD-020,
DO-214AC
AEC-Q101
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: FSK-21A-4 Product Details - Tyco Electronics ● Resources ❍ ❍ ❍ ❍ ❍ ● My Account ❍ ❍ ❍ ❍ ❍ ● Check Product Compliance Cross Reference Products Compare Multiple Products Check Distributor Inventory Find Authorized Distributors Manage My Part Lists
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FSK-21A-4
FSK-21A-4
20-Jul-09
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4600 mosfet
Abstract: s0913 SUD50P10-43L-E3
Text: SUD50P10-43L Vishay Siliconix P-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.043 at VGS = - 10 V - 37 0.048 at VGS = - 4.5 V - 35 VDS (V) - 100 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.)
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SUD50P10-43L
2002/95/EC
O-252
SUD50P10-43L-E3
25trademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
4600 mosfet
s0913
SUD50P10-43L-E3
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SI9948AEY-T1-E3
Abstract: Si9948AEY SI9948AEY-T1
Text: Si9948AEY Vishay Siliconix Dual P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.17 at VGS = - 10 V ± 2.6 0.26 at VGS = - 4.5 V ± 2.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
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Si9948AEY
2002/95/EC
Si9948AEY-T1-E3
Si9948AEY-T1-GE3
18-Jul-08
SI9948AEY-T1
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Si7405BDN
Abstract: Si7405DN Si7405DN-T1
Text: Specification Comparison Vishay Siliconix Si7405BDN vs. Si7405DN Description: Package: Pin Out: P-Channel, 12-V D-S MOSFET PowerPAK 1212-8 Identical Part Number Replacements: Si7405BDN-T1-E3 or Si7405BDN-T1-GE3 replaces Si7405DN-T1-E3 Si7405BDN-T1-E3 or Si7405BDN-T1-GE3 replaces Si7405DN-T1
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Si7405BDN
Si7405DN
Si7405BDN-T1-E3
Si7405BDN-T1-GE3
Si7405DN-T1-E3
Si7405DN-T1
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Si2308BDS
Abstract: SI2308DS-T1-GE3 si2308bds-t1-ge3 si2308 SI2308BDS-T1-E3 SI2308DS Si2308DS-T1-E3 Si2308DS-T1 65178 VISHAY SI2308BDS
Text: Specification Comparison Vishay Siliconix Si2308BDS vs. Si2308DS Description: N-Channel, 60-V D-S MOSFET Package: SOT-23 Pin Out: Identical Part Number Replacements: Si2308BDS-T1-GE3 replaces Si2308DS-T1-GE3 Si2308BDS-T1-E3 or Si2308BDS-T1-GE3 replaces Si2308DS-T1-E3
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Si2308BDS
Si2308DS
OT-23
Si2308BDS-T1-GE3
Si2308DS-T1-GE3
Si2308BDS-T1-E3
Si2308DS-T1-E3
si2308
Si2308DS-T1
65178
VISHAY SI2308BDS
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Si4559ADY
Abstract: Si4559EY Si4559ADY-T1-GE3 Si4459EY-T1-GE3 si4559ey-t1-e3
Text: Specification Comparison Vishay Siliconix Si4559ADY vs. Si4559EY Description: Package: Pin Out: N- and P-Channel, 60-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4559ADY-T1-GE3 replaces Si4459EY-T1-GE3 Si4559ADY-T1-E3 or Si4559ADY-T1-GE3 replaces Si4559EY-T1-E3
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Si4559ADY
Si4559EY
Si4559ADY-T1-GE3
Si4459EY-T1-GE3
Si4559ADY-T1-E3
Si4559EY-T1-E3
Si4559EY-T1
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Untitled
Abstract: No abstract text available
Text: SQ3442EV Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 4.5 V 0.057 RDS(on) (Ω) at VGS = 2.5 V 0.090 ID (A) 3.0 Configuration Single TSOP-6 Top V iew 3 mm • Halogen-free According to IEC 61249-2-21
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SQ3442EV
2002/95/EC
AEC-Q101
SQ3442EV-T1-GE3
18-Jul-08
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SI4948EY-T1-E3
Abstract: No abstract text available
Text: Si4948EY Vishay Siliconix Dual P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.120 at VGS = - 10 V ± 3.1 0.150 at VGS = - 4.5 V ± 2.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
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Si4948EY
2002/95/EC
Si4948EY-T1-E3
Si4948EY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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si3483dvt1e3
Abstract: Si3483DV Si3483DV-T1-E3 Si3483CDV Si3483CDV-T1-E3 Si3483CDV-T1-GE3
Text: Specification Comparison Vishay Siliconix Si3483CDV vs. Si3483DV Description: Package: Pin Out: P-Channel, 30-V D-S MOSFET TSOP-6 Identical Part Number Replacements: Si3483CDV-T1-E3 or Si3483CDV-T1-GE3 replaces Si3483DV-T1-E3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
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Si3483CDV
Si3483DV
Si3483CDV-T1-E3
Si3483CDV-T1-GE3
Si3483DV-T1-E3
20-Jul-09
si3483dvt1e3
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Si3473DV
Abstract: Si3473DV-T1 Si3473DV-T1-E3 SI3473DVT1E3
Text: Specification Comparison Vishay Siliconix Si3473CDV vs. Si3473DV Description: Package: Pin Out: P-Channel, 12-V D-S MOSFET TSOP-6 Identical Part Number Replacements: Si3473CDV-T1-E3 or Si3473CDV-T1-GE3 replaces Si3473DV-T1-E3 Si3473CDV-T1-E3 or Si3473CDV-T1-GE3 replaces Si3473DV-T1
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Si3473CDV
Si3473DV
Si3473CDV-T1-E3
Si3473CDV-T1-GE3
Si3473DV-T1-E3
Si3473DV-T1
SI3473DVT1E3
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LT1074HVCT equivalent
Abstract: LT1076 application step down LT1074 24v C1042 LT1074 lt1074hvit
Text: LT1074/LT1076 Step-Down Switching Regulator ponents, are included on the chip. The topology is a classic positive “buck” configuration but several design innovations allow this device to be used as a positive-to-negative converter, a negative boost converter, and as a flyback
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LT1074/LT1076
LT1074)
100kHz
LT1074
LT1074/LT1076-
C1003
C1042
C1033
P1006
LT1074HVCT equivalent
LT1076 application step down
LT1074 24v
lt1074hvit
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