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    20N50 Search Results

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    20N50 Price and Stock

    onsemi FDB20N50F

    MOSFET N-CH 500V 20A D2PAK
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    DigiKey FDB20N50F Cut Tape 9,125 1
    • 1 $3.59
    • 10 $2.48
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    FDB20N50F Digi-Reel 9,125 1
    • 1 $3.59
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    FDB20N50F Reel 8,800 800
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    Avnet Americas FDB20N50F Reel 22 Weeks 800
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    • 1000 $1.38291
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    FDB20N50F Reel 22 Weeks 800
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    Mouser Electronics FDB20N50F 11,169
    • 1 $3.97
    • 10 $2.81
    • 100 $2
    • 1000 $1.77
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    Newark FDB20N50F Cut Tape 687 1
    • 1 $3.44
    • 10 $2.89
    • 100 $2.34
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    FDB20N50F Reel 800
    • 1 $1.95
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    • 1000 $1.95
    • 10000 $1.74
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    Rochester Electronics FDB20N50F 692 1
    • 1 $1.8
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    • 100 $1.7
    • 1000 $1.53
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    Richardson RFPD FDB20N50F 800
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    Avnet Asia FDB20N50F 22 Weeks 800
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    • 1000 $1.62829
    • 10000 $1.52778
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    Avnet Silica FDB20N50F 23 Weeks 800
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    EBV Elektronik FDB20N50F 24 Weeks 800
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    TTM Technologies BD60120N50100AHF

    BALUN 5.9GHZ-11.7GHZ 50/100 0404
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    DigiKey BD60120N50100AHF Cut Tape 7,919 1
    • 1 $1.6
    • 10 $1.101
    • 100 $0.8133
    • 1000 $0.64753
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    BD60120N50100AHF Digi-Reel 7,919 1
    • 1 $1.6
    • 10 $1.101
    • 100 $0.8133
    • 1000 $0.64753
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    BD60120N50100AHF Reel 4,000 4,000
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    Richardson RFPD BD60120N50100AHF 3,368 1
    • 1 $0.36
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    BD60120N50100AHF 4,000
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    Cal-Chip Electronics CHV2220N500102JCT

    HVCAP2220 COG 1000PF 5% 500V
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    DigiKey CHV2220N500102JCT Digi-Reel 1,000 1
    • 1 $4.24
    • 10 $2.829
    • 100 $2.0821
    • 1000 $1.77848
    • 10000 $1.77848
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    CHV2220N500102JCT Cut Tape 1,000 1
    • 1 $4.24
    • 10 $2.829
    • 100 $2.0821
    • 1000 $1.77848
    • 10000 $1.77848
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    Cal-Chip Electronics CHV2220N500684KXT

    HVCAP2220 X7R .68UF 10% 500V
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    DigiKey CHV2220N500684KXT Cut Tape 480 1
    • 1 $2.85
    • 10 $1.86
    • 100 $1.3355
    • 1000 $1.3355
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    CHV2220N500684KXT Digi-Reel 480 1
    • 1 $2.85
    • 10 $1.86
    • 100 $1.3355
    • 1000 $1.3355
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    TTM Technologies C20N50Z4B

    SMD TERM 20W 50 OHM 6GHZ 1210
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    DigiKey C20N50Z4B Cut Tape 260 1
    • 1 $5.31
    • 10 $4.055
    • 100 $3.2242
    • 1000 $2.82704
    • 10000 $2.82704
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    C20N50Z4B Digi-Reel 260 1
    • 1 $5.31
    • 10 $4.055
    • 100 $3.2242
    • 1000 $2.82704
    • 10000 $2.82704
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    Richardson RFPD C20N50Z4B 306 1,000
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    • 1000 $2.33
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    C20N50Z4B 1,000
    • 1 -
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    20N50 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    20N50 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    20N50C1 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    20N50C1D Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    20N50C1D Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    20N50E1 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    20N50E1D Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    20N50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: RFP-20N50TP Aluminum Nitride Termination VER3/19/01 Description: RFP-20N50TP Features: o 1kHz -3.0 GHz o 20 Watts o Aluminum Nitride AlN ceramic o Welded Silver leads o Non-Nicrome resistive element o Low VSWR o 100% Tested The RFP-20N50TP is a general purpose 20 Watt termination


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    PDF RFP-20N50TP VER3/19/01 RFP-20N50TP 700oF)

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information VDSS = 500 V = 20 A ID25 RDS on = 0.33 Ω IXTH 20N50D High Voltage MOSFET N-Channel, Depletion Mode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


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    PDF 20N50D O-247 flam00

    20n50

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 20N50 Preliminary Power MOSFET 20A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 20N50 is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed and low leakage current,


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    PDF 20N50 20N50 20N50L-T3P-T 20N50G-T3P-T QW-R502-895

    Untitled

    Abstract: No abstract text available
    Text: RFP-20N50TPC Aluminum Nitride Termination VER3/19/01 Description: The RFP-20N50TPC is a general purpose 20 Watt termination constructed on an Aluminum Nitride AlN ceramic substrate for use in high power RF/microwave amplifiers and related products. The AlN


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    PDF RFP-20N50TPC VER3/19/01 RFP-20N50TPC 700oF)

    20N50D

    Abstract: 20n50
    Text: High Voltage MOSFET N-Channel, Depletion Mode VDSS = 500 V = 20 A ID25 RDS on = 0.33 Ω IXTH 20N50D IXTT 20N50D Preliminary Data Sheet TO-247 (IXFH) Symbol Test Conditions Maximum Ratings V DSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C 500 V VGS


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    PDF 20N50D O-247 O-268 20N50D 20n50

    8n50e

    Abstract: 20n50e MC34262 P3657A PT4215 14N5 SG-35 14N50 MC34262D MC332
    Text: MC34262, MC33262 Power Factor Controllers The MC34262/MC33262 are active power factor controllers specifically designed for use as a preconverter in electronic ballast and in off−line power converter applications. These integrated circuits feature an internal startup timer for stand−alone applications,


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    PDF MC34262, MC33262 MC34262/MC33262 MC34262/D 8n50e 20n50e MC34262 P3657A PT4215 14N5 SG-35 14N50 MC34262D MC332

    MC33262

    Abstract: P3657-A 14n50e MC34262 8n50e MOSFET 20n50e EE-42 JESD22-A114-F ac step-up transformer winding awg boost uc3842 application note
    Text: MC34262, MC33262 Power Factor Controllers The MC34262/MC33262 are active power factor controllers specifically designed for use as a preconverter in electronic ballast and in off−line power converter applications. These integrated circuits feature an internal startup timer for stand−alone applications,


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    PDF MC34262, MC33262 MC34262/MC33262 MC34262/D MC33262 P3657-A 14n50e MC34262 8n50e MOSFET 20n50e EE-42 JESD22-A114-F ac step-up transformer winding awg boost uc3842 application note

    8n50e

    Abstract: No abstract text available
    Text: Integrate Circuit SMD Type Power Factor Controllers MC34262 • Features SOP-8 ● Overvoltage Comparator Eliminates Runaway Output Voltage ● Internal Startup Timer ● One Quadrant Multiplier ● Zero Current Detector ● Trimmed 2% Internal Bandgap Reference


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    PDF MUR460 20N50E 1N4934 8n50e

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


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    PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    20n50e

    Abstract: 20N50ES
    Text: DATE CHECKED Oct.-14-'08 CHECKED Oct.-14-'08 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor


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    PDF FMH20N50ES MS5F7232 H04-004-05 H04-004-03 20n50e 20N50ES

    8N50E

    Abstract: 8N50 20n50e motorola 20n50e mc34262 MOSFET 20n50e P3657A EE-42 MC33262 MC33262D
    Text: Order this document by MC34262/D MC34262 MC33262 Power Factor Controllers The MC34262/MC33262 are active power factor controllers specifically designed for use as a preconverter in electronic ballast and in off–line power converter applications. These integrated circuits feature an internal startup


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    PDF MC34262/D MC34262 MC33262 MC34262/MC33262 MC34262/D* 8N50E 8N50 20n50e motorola 20n50e mc34262 MOSFET 20n50e P3657A EE-42 MC33262 MC33262D

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


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    PDF 734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302

    VAC 4021

    Abstract: 14n50e JESD22-A114-F JESD78 MC33262 MC34262 SG3561 TDA4817 230V dc variable speed control pwm P3657-A
    Text: MC34262, MC33262 Power Factor Controllers The MC34262/MC33262 are active power factor controllers specifically designed for use as a preconverter in electronic ballast and in off- line power converter applications. These integrated circuits feature an internal startup timer for stand- alone applications,


    Original
    PDF MC34262, MC33262 MC34262/MC33262 MC34262/D VAC 4021 14n50e JESD22-A114-F JESD78 MC33262 MC34262 SG3561 TDA4817 230V dc variable speed control pwm P3657-A

    mc34262

    Abstract: 20n50e 20n50 MC34262 application note MOSFET 20n50e MC33262 P3657-A MC34362 PT4220 2535 ic 12V DC to 36V dC converter circuit diagram
    Text: ON Semiconductort MC34262 MC33262 Power Factor Controllers The MC34262/MC33262 are active power factor controllers specifically designed for use as a preconverter in electronic ballast and in off–line power converter applications. These integrated circuits feature an internal startup timer for stand–alone applications,


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    PDF MC34262 MC33262 MC34262/MC33262 r14525 MC34262/D mc34262 20n50e 20n50 MC34262 application note MOSFET 20n50e MC33262 P3657-A MC34362 PT4220 2535 ic 12V DC to 36V dC converter circuit diagram

    MC33262 datasheet

    Abstract: MOSFET 20n50e 20n50e motorola 20n50e zero crossing detector ic with 230v 20n50 PT4220 EE-42 MC33262 EE-42-20
    Text: Order this document by MC34262/D MC34262 MC33262 Power Factor Controllers The MC34262/MC33262 are active power factor controllers specifically designed for use as a preconverter in electronic ballast and in off–line power converter applications. These integrated circuits feature an internal startup


    Original
    PDF MC34262/D MC34262 MC33262 MC34262/MC33262 MC34262/D* MC33262 datasheet MOSFET 20n50e 20n50e motorola 20n50e zero crossing detector ic with 230v 20n50 PT4220 EE-42 MC33262 EE-42-20

    20n50

    Abstract: RFP-20N50TPR SN63
    Text: 20 Watts, 50 Ω General Specifications Resistive Element: Substrate: Cover: Mounting Flange: Thick film Aluminum nitride ceramic Alumina ceramic Copper, nickel plated per QQ-N-290 99.99% pure silver .005” thk Lead(s): Features • DC – 4.0 GHz Electrical Specifications


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    PDF QQ-N-290 RFP-20N50TPR 20n50 RFP-20N50TPR SN63

    ssh20n50

    Abstract: ssm20n45 20N45 2on50 20n50
    Text: D E j ? ci b m 4 2 000S3Û7 1 | : N-CHÂNNEL * POWER MOSFETS ? / \ -fó SAMSUNG SE MI CO NDUCT OR INC 2 SSM20N45/20N50 SSH20N45/20N50 ’ •> f Preliminary Specifications PRODUCT SUMMARY 500 Volt, 0.3 Ohm SFET V ds RoS on Id SSM20N45 450V 0.3 0 20A 20N50


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    PDF SSM20N45/20N50 SSH20N45/20N50 000S3 SSM20N45 SSM20N50 SSM20N50 00GS435 ssh20n50 20N45 2on50 20n50

    20n50

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS SSH20N45/20N50 FEATURES • • • • • • • TO-3P L o w e r R d s o n Im p ro v e d in d u c tiv e ru g g e d n e s s F a s t s w itc h in g tim e s R u g g e d p o ly s ilic o n g a te c e ll s tru c tu re L o w e r in p u t c a p a c ita n c e


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    PDF SSH20N45/20N50 SSH20N45 SSH20N45 SSH20N50 SSM20N45/20N50 20n50

    20N50

    Abstract: ssh20n50 c 20n50 SSH20N45 20N50 MOSFET SSH20N45/20N50
    Text: N-CHANNEL POWER MOSFETS SSH20N45/20N50 FEATURES • • • • • • • Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


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    PDF SSH20N45/20N50 SSH20N45 SSM20N45/20N50 20N50 ssh20n50 c 20n50 20N50 MOSFET SSH20N45/20N50

    20N50A

    Abstract: 20n50 IXGH20N50 f sss 20n60 sss 20n60
    Text: 4686226 ' I X Y S CORP 03 DE I •-§tiñ b SEb □□□□5E4 T~ 3 T — t £ T 1~~ £} 20N50, 60 20N50, 60 20 A M PS, 5 0 0 -6 0 0 VOLTS M AXIM UM RATINGS Sym. 20N50 20N50 IXGH20N60 IXGM20N60 Unit Drain-Source Voltage 1) Vdss 500 600 Vdc


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    PDF IXGH20N50, IXGM20N50, IXGH20N50 IXGM20N50 IXGH20N60 IXGM20N60 20N50, 20N50A, 20N50A. 20N50A 20n50 f sss 20n60 sss 20n60

    IGT4E10

    Abstract: 2N6976 THOMSON 58E THOMSON DISTRIBUTOR THOMSON DISTRIBUTOR 58e d 2N6975 2N6977 IGTH10N40 IGTH20N40 IGTH20N40A
    Text: THOMSO N/ DISTRIBUTOR SflE D TCSK ^□2 b ñ7 3 □0 QS 714 Insulated-Gate Bipolar Transistors IGBTs N-Channel Enhancement-Mode Conductivity Modulated Power Field-Effect Transistors—IGBTs Optimized for Switching Applications Package M axim um Ratings BV c e s


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    PDF 0QS714 O-204AA O-218AC O-220AB 2N6975 2N6977 IGTM10N40 IGTM10N40A IGTM20N40 IGTM20N40A IGT4E10 2N6976 THOMSON 58E THOMSON DISTRIBUTOR THOMSON DISTRIBUTOR 58e d 2N6975 2N6977 IGTH10N40 IGTH20N40 IGTH20N40A

    6N60E

    Abstract: 10N100E 14n50e MOSFET 20n50e 8n50e 35N15E 32N20E 20N50E 6N100E 16N40E
    Text: ir TMOS TM OS Power MOSFETs Plastic Packages — TO-247 TO-247 CASE 340F-03 MTW PREFIX — Isolateci TO-218 Table 4 — N-Channel TO-247 VDss (Volts) Min RDS(on) I d (Ohms) (Amps) Max Device 1000 800 600 2 3 M TW 6N100E Table 5 — N- and P-Channel Isolated TO-218


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    PDF O-247 O-218 340F-03 340B-03 O-247 6N100E 10N100E 6N60E 14n50e MOSFET 20n50e 8n50e 35N15E 32N20E 20N50E 16N40E

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


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    PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    MTM13N50E

    Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
    Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”


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    PDF BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E