Contextual Info: Surface Mount Voltage Controlled Oscillator 5V Tuning for PLL IC’s ROS-2168-119+ 2112 to 2168 MHz Features • Linear Tuning characteristics • Low Phase Noise • Low Pushing • Low Pulling • Aqueous washable CASE STYLE: CK605 PRICE: $19.95 ea. QTY 5-49

Contextual Info: Europe: +49 / 7731 8399 0 | Email: info@meder.com Artikel Nr.: USA: +1 / 508 295 0771 | Email: salesusa@meder.com Asia: +852 / 2955 1682 | Email: salesasia@meder.com 2112903035 Artikel: KSK-1C90F-3035 Magnetische Eigenschaften Anzugserregung Bezugswert Test-Spule

NJM2123

Abstract: threshold switch HJM2123D NJM2112 NJM2120 NJM2123V SSOP16
Contextual Info: DUAL OP-AMP W ITH ANALOG SWITCH NJM2123 The NJM2123 is a operational amplifier with analog switch 2 circuit of 2-input/ 1-output . It is applicable to the audio part for Video (VTR, LD.) and the Car-stereo. The NJM2123 has the same electrical characteristic o f the N JM 2112 has the same electrical characteristic o f the N JM 2112, and

JESD97

Abstract: NAND04G-B2D TSOP48 outline
Contextual Info: NAND16GW3B4D 16-Gbit 4 x 4 Gbits , two Chip Enable, 2112-byte page, 3 V supply, single level, multiplane, NAND flash memory Preliminary Data Features • High-density NAND flash memory – 16 Gbits of memory array – 512 Mbits of spare area – Cost-effective solutions for mass storage

JESD97

Abstract: NAND08GW3C2B NAND16GW3C4B 16Gbit
Contextual Info: NAND16GW3C4B 16-Gbit 2 x 8 Gbits , two Chip Enable, 2112-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 16 Gbits of memory array – 512 Mbits of spare area

Contextual Info: Bulletin PD-21129 04/06 BAT54WPbF SCHOTTKY DIODE 0.2 Amp IF AV = 0.2Amp VR = 30V Major Ratings and Characteristics Characteristics Description/ Features This Schottky barrier diode is designed for high speed switching application, voltage clamping and circuit protection.

Contextual Info: Final PD-21127 04/06 BAT54SPbF SCHOTTKY DIODE 0.2 Amp IF AV = 0.2Amp VR = 30V Major Ratings and Characteristics Characteristics Description/ Features This Schottky barrier diode is designed for high speed switching application, voltage clamping and circuit protection.

Contextual Info: Bulletin PD-21121 05/06 43CTQ100GPbF SCHOTTKY RECTIFIER 40 Amp IF AV = 40 Amp VR = 100V Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular 40 A VRRM 100 V waveform IFSM @ tp = 5 s sine 850 A VF @ 20 Apk, TJ = 125°C

Contextual Info: Final PD-21120 rev. A 05/06 16CTQ100GPbF SCHOTTKY RECTIFIER 16 Amp IF AV = 16 Amp VR = 100V Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular waveform 16 A VRRM 100 V IFSM @ tp = 5 s sine 650 A VF @ 8 Apk, TJ = 125°C

Contextual Info: My Account C hange Tyco Electronics Se a rch by Ke yword or Pa rt # Products Documentation Resources My Account Customer Support Home > Products > By Type > Relays > Product Feature Selector > Product Details 2112D9NE Product Details Time Delay Relays Quick Links

Contextual Info: Bulletin PD-21122 04/06 BAT54PbF SCHOTTKY DIODE 0.2 Amp IF AV = 0.2Amp VR = 30V Major Ratings and Characteristics Characteristics Description/ Features This Schottky barrier diode is designed for high speed switching application, voltage clamping and circuit protection.

Contextual Info: Final PD-21127 04/06 BAT54SPbF SCHOTTKY DIODE 0.2 Amp IF AV = 0.2Amp VR = 30V Major Ratings and Characteristics Characteristics Description/ Features This Schottky barrier diode is designed for high speed switching application, voltage clamping and circuit protection.

TCO-2111

Contextual Info: Voltage Controlled Crystal Oscillator VCXO TCO-211 Series * 6Pin J-Lead VCXO Features Application Transmission equipment Measurement system High frequency Wide frequency control range Specifications Type TCO-2111 TCO-2112 TCO-2113 TCO-2114 77.76 , 155.52 , 156.250 , 166.6286 , 622.08 , 666.5143 MHz

VCUT07B1-HD1

Abstract: VCUT07B1
Contextual Info: VCUT07B1-HD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2L FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) • XY • • • 21121 Bar = pin 1marking X = date code

Contextual Info: 2104 M PR E CI NE D ON S I CHI A SOLDER TERMINALS SLOTTED PINS 2112 -X- Board Thickness Length V -X- Board Thickness Length V 1 2 3 4 .031 .062 .094 .125 .055 .086 .117 .148 5 1 2 3 4 .016 .031 .062 .094 .125 .037 .053 .084 .115 .147 2104-X-01-XX-00-00-07-0

EIA-364-29

Abstract: EIA-364-27 EIA-364-20 EIA-364-21 EIA-364-28 EIA-364-59
Contextual Info: Product Specification 108-2112 09Apr09 Rev A VAL-U-LOK* Connectors 1. SCOPE 1.1. Content This specification covers perform ance, tests and quality requirem ents for VAL-U-LOK* Connectors. 1.2. Qualification W hen tests are perform ed on the subject product line, procedures specified in Figure 1 shall be used.

Contextual Info: Part Number : 2112QAX5 Serial Number : 2112 Neon & Incandescent Indicators Light Source Neon Color Green Voltage V 125VAC Mounting hole (inch) 0,31 Mounting hole (metric) 7,9 Termination .187" QC Bezel color Black Housing color Black UL File E20325 CSA file

Contextual Info: Part Number : 2112AX5 Serial Number : 2112 Neon & Incandescent Indicators Light Source Neon Color Green Voltage V 125VAC Mounting hole (inch) 0,31 Mounting hole (metric) 7,9 Termination 4.5" 22 AWG wire Bezel color Black Housing color Black UL File E20325

Contextual Info: NAND02G-B2D 2 Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories Preliminary Data Features • High density NAND Flash memory – Up to 2 Gbit memory array – Cost-effective solution for mass storage applications ■

T11-T13

Abstract: SSP-21120
Contextual Info: 000 SSP-21120 ILC DATA DEVICE CORPORATION*_ 28 VDC SOLID-STATE POWER CONTROLLER MODULE FEATURES DESCRIPTION • True PT Protection The SSP-21120 Series of 28 Vdc, Solid-State Power Controllers SSPCs replace electromagnetic circuit break­ ers and solid state relays rated for 40,

NAND02GW3B2C

Abstract: VFBGA63 ST 2gbit NAND NAND02GR4B2C NAND01G-B2B NAND01GW3B2B NAND01Gr4B2B NAND01GR3B2B NAND02G-B2C NAND01G
Contextual Info: NAND01G-B2B NAND02G-B2C 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory Features • ■ High Density NAND Flash memories – Up to 2 Gbit memory array – Cost effective solutions for mass storage applications NAND interface – x8 or x16 bus width

660nm* 20mw

Abstract: 20MW 6521-2112-AU
Contextual Info: 6521-2112-AU 660nm 20mW Laser Diodes AUTO PACKAGE Specifications Device Package Type Laser Diode TO-18 φ5.6mm •Absolute Maximum Ratings(Tc=25℃) Symbols Characteristics Optical Output Po Laser Vr Reverse Voltage PIN PD Vr(PIN) Operating Temperature Top

VBUS05L1-DD1-G-08

Contextual Info: VBUS05L1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Low Capacitance, Single-Line ESD-Protection Diode in LLP1006-2M FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) XY • 21121 • • • Bar = pin 1 marking

ULGA52

Abstract: NAND08GW3B2C ONFI nand flash NAND04GW3B2DN6 NAND08G-B2C NAND08GR3B4C NAND08GW3B4C
Contextual Info: NAND04G-B2D NAND08G-BxC 4-Gbit, 8-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 8 Gbits of memory array – Cost-effective solution for mass storage applications