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    NAND08GW3C2B Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NAND08GW3C2B Numonyx 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory Original PDF
    NAND08GW3C2BN1E Numonyx 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory Original PDF

    NAND08GW3C2B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    LGA52

    Abstract: LGA-52 ULGA52 nand 16g 16G nand flash NAND08GW3C2B NAND16GW3 NAND16GW3C4A NAND16GW3C4B
    Text: NAND08GW3C2B NAND16GW3C4B 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory Target Specification Features • High density multilevel cell MLC Flash memory – Up to 16 Gbit memory array – Up to 512 Mbit spare area – Cost-effective solutions for mass storage


    Original     		NAND08GW3C2B NAND16GW3C4B TSOP48 LGA52 LGA-52 ULGA52 nand 16g 16G nand flash NAND08GW3C2B NAND16GW3 NAND16GW3C4A NAND16GW3C4B PDF

    NAND04

    Abstract: A15-A23
    Text: NAND04GW3C2B NAND08GW3C2B 4-Gbit, 8-Gbit, 2112-byte page, 3 V supply, multiplane architecture, MLC NAND flash memories Preliminary Data Features • High density multilevel cell MLC flash memory – 4, 8 Gbits of memory array – 256, 512 Mbits of spare area


    Original     		NAND04GW3C2B NAND08GW3C2B 2112-byte NAND04 A15-A23 PDF

    package tsop48

    Abstract: LGA52 ai12472 nand flash lga NAND08GW3C2B LGA-52 NAND0
    Text: NAND08GW3C2B 8-Gbit, 2112-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Features • High density multilevel cell MLC flash memory – 8 Gbits of memory array – 512 Mbits of spare area – Cost-effective solutions for mass storage applications


    Original     		NAND08GW3C2B 2112-byte TSOP48 LGA52 package tsop48 ai12472 nand flash lga NAND08GW3C2B LGA-52 NAND0 PDF

    JESD97

    Abstract: NAND08GW3C2B NAND16GW3C4B 16Gbit
    Text: NAND16GW3C4B 16-Gbit 2 x 8 Gbits , two Chip Enable, 2112-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 16 Gbits of memory array – 512 Mbits of spare area


    Original     		NAND16GW3C4B 16-Gbit 2112-byte JESD97 NAND08GW3C2B NAND16GW3C4B 16Gbit PDF

    Untitled

    Abstract: No abstract text available
    Text: NAND16GW3C4B 16-Gbit 2 x 8 Gbits , two Chip Enable, 2112-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 16 Gbits of memory array – 512 Mbits of spare area


    Original     		NAND16GW3C4B 16-Gbit 2112-byte PDF

    LGA52

    Abstract: 4GW3 NAND08GW3C2B 2112B LGA-52 NAND04GW3C
    Text: NANDxxGW3C2B 4-Gbit, 8-Gbit, 2112-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Features • High density multilevel cell MLC flash memory – 4, 8 Gbits of memory array – 256, 512 Mbits of spare area – Cost-effective solutions for mass storage


    Original     		2112-byte TSOP48 LGA52 128yx 4GW3 NAND08GW3C2B 2112B LGA-52 NAND04GW3C PDF