319345S12
Abstract: 165235SM12 135185SM5 0709s 12-2 3980-4900MHz 398490s12 600-1200MHz 15-17S 025050S
Text: Model Number Frequency Tuning Tuning VCC ICC Voltage Sensitivity MHz 001001SMC5TM 10-10 MHz Output 2ND Noise Power c 10 KHz (VDC) (MHz/v) (VDC) (mA) (dBm) (dBc) (dBc) 1-3.5 3 5 25 -10 -110 004004SM5 42-46 MHz 0.5-4.5 3 5 8 -3±1 -13 -118 006009SMI12 60-90MHz
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001001SMC5TM
004004SM5
006009SMI12
60-90MHz
007008SM10
64MHz
013015SMi9
130-150MHz
015020SM5
150-200MHz
319345S12
165235SM12
135185SM5
0709s
12-2
3980-4900MHz
398490s12
600-1200MHz
15-17S
025050S
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single chip satellite multiswitch
Abstract: diseqc master diseqc schematic diagram receiver satellite schematic diagram receiver data circuit satellite MultiSwitch sat MAX12005 DISEQC SWITCH MAX12005ETM DISEQC SWITCH DATASHEET
Text: 19-5554; Rev 0; 9/10 TION KIT EVALUA BLE AVAILA Satellite IF Switch Features The MAX12005 satellite IF switch IC is designed for multi-user applications supporting two quad universal low-noise blocks LNBs to be matrix switched to four satellite receivers. The system can be easily expanded
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MAX12005
T4877
MAX12005
single chip satellite multiswitch
diseqc master
diseqc
schematic diagram receiver satellite
schematic diagram receiver data circuit satellite
MultiSwitch sat
DISEQC SWITCH
MAX12005ETM
DISEQC SWITCH DATASHEET
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Untitled
Abstract: No abstract text available
Text: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLW4460-xx-xnnnS Series HUW0424131-01C August 9, 2006 Preliminary Specification of 1.51µm-1.57µm MQW-DFB Laser Diode Module for Optical Microwave Transmission SLW4460-xx-xnnnS Series
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SLW4460-xx-xnnnS
HUW0424131-01C
HUW0424131-01B
1550nm.
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Untitled
Abstract: No abstract text available
Text: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLW4470-xx Series HUW0424129-01B August 10, 2006 Preliminary Specification of 1.55µm MQW-DFB Laser Diode Module for Optical Microwave Transmission SLW4470-xx Series RoHS Compliant Page 1 of 7
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SLW4470-xx
HUW0424129-01B
HUW0424129-01A
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schematic diagram receiver data circuit satellite
Abstract: DISEQC SWITCH single chip satellite multiswitch diseqc schematic diagram receiver satellite diseqc master MultiSwitch sat lnb power step up ic 0x06 sat receiver
Text: 19-5554; Rev 1; 10/11 TION KIT EVALUA BLE AVAILA Satellite IF Switch Features The MAX12005 satellite IF switch IC is designed for multi-user applications supporting two quad universal low-noise blocks LNBs to be matrix switched to four satellite receivers. The system can be easily expanded
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MAX12005
schematic diagram receiver data circuit satellite
DISEQC SWITCH
single chip satellite multiswitch
diseqc
schematic diagram receiver satellite
diseqc master
MultiSwitch sat
lnb power step up ic
0x06
sat receiver
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transistor 10mhz 60w
Abstract: UGF21060 UGF21060F UGF21060P mosfet class ab rf
Text: UGF21060 60W, 2.17GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class
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UGF21060
17GHz,
MRF21060/MRF21060S.
700mA
30kHz
2140MHz
84MHz
10MHz
UGF21060
transistor 10mhz 60w
UGF21060F
UGF21060P
mosfet class ab rf
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UGF21030F
Abstract: UGF21030 UGF21030P 300GP
Text: UGF21030 30W, 2.1 GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class
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UGF21030
2135MHz,
2145MHz
f1-10MHz
10MHz)
28VSpace
28VDC
350mA
2140Mhz
84MHz
UGF21030F
UGF21030
UGF21030P
300GP
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PN channel MOSFET 10A
Abstract: Cree Microwave UGF21125
Text: UGF21125 125W, 2.17GHz, 28V, Broadband RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency UMTS band from 2110 to 2170 MHz. Suitable for W-CDMA, TDMA, CDMA, GSM single and Multi-Carrier power amplifiers in
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UGF21125
17GHz,
2135MHz,
2145MHz
f1-10MHz
10MHz)
UGF21125
PN channel MOSFET 10A
Cree Microwave
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Cree Microwave
Abstract: UGF21060 UGF21060F UGF21060P
Text: UGF21060 60W, 2.17GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class
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UGF21060
17GHz,
MRF21060/MRF21060S.
UGF21060
Cree Microwave
UGF21060F
UGF21060P
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balun tc1-1-13m
Abstract: No abstract text available
Text: FEATURES Power conversion gain of 1.6 dB Wideband RF, LO, and IF ports SSB noise figure of 11 dB Input IP3 of 28 dBm Input P1dB of 12 dBm Typical LO drive of 0 dBm Low LO leakage Single supply operation: 5 V @ 240 mA Exposed paddle, 4 mm x 4 mm, 24-lead LFCSP package
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24-lead
ADL5802
CP-24-3)
ADL5802ACPZ-R7
ADL5802-EVALZ
CP-24-3
balun tc1-1-13m
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sumitomo connectors
Abstract: HUW0724101-01A
Text: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLW4270-xx/RH2 Series HUW0724101-01A December 28, 2007 Technical Specification of 1.31µm MQW-DFB Laser Diode Module for Optical Microwave Transmission SLW4270-xx/RH2 Series RoHS Compliant
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SLW4270-xx/RH2
HUW0724101-01A
sumitomo connectors
HUW0724101-01A
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LTE repeater
Abstract: E4418B E4440A IFR3414 2145MHz
Text: Power Amplifier RFP-2135-49-48GD Product Features Application • GaN on SiC + Doherty Technology • High Efficiency • Solid-state Linear Design • Suitable for WCDMA/LTE • 50 Ohm Input/Output Impedance • High Reliability and Ruggedness • Built in Output Isolator
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RFP-2135-49-48GD
2145MHz
20MHz
49dBm/
TS-25
LTE repeater
E4418B
E4440A
IFR3414
2145MHz
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UGF21090
Abstract: UGF21090F UGF21090P 50 watts amplifier 10mhz
Text: UGF21090 90W, 2.17GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency UMTS band from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM single and Multi-Carrier power amplifiers
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UGF21090
17GHz,
2135MHz,
2145MHz
f1-10MHz
10MHz)
100ain
28VDC,
2140MHz
84MHz
UGF21090
UGF21090F
UGF21090P
50 watts amplifier 10mhz
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Untitled
Abstract: No abstract text available
Text: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLW4470-xx-xnnnx Series HUW0424128-01A November 4, 2004 Preliminary Specification of 1.29µm-1.57µm MQW-DFB Laser Diode Module for Optical Microwave Transmission SLW4470-xx-xnnnx Series
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SLW4470-xx-xnnnx
HUW0424128-01A
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Microwave Transmission applications
Abstract: ExceLight Communications HUW0724174-01A SLW4470 ALUMINIUM CLADDING
Text: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLW4470-xx/RH2 Series HUW0724174-01A March 3, 2008 Technical Specification of 1.55µm MQW-DFB Laser Diode Module for Optical Microwave Transmission SLW4470-xx/RH2 Series RoHS Compliant
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SLW4470-xx/RH2
HUW0724174-01A
Microwave Transmission applications
ExceLight Communications
HUW0724174-01A
SLW4470
ALUMINIUM CLADDING
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rt 1915
Abstract: analog laser diode 6 GHz 1550 laser diode TEC TO CAN
Text: Transmission Laser Modules KeyFeatures 7-pin package with GPO connector RF input 50Ω RF impedance InGaAsP monolithically integrated DFB laser chip 1915 LMA ANALOG 6GHz Prototype Target Specification 10mW 1.55µm Direct Modulated Analog Laser Module >6GHz
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3CN01366AA
rt 1915
analog laser diode 6 GHz
1550 laser diode TEC TO CAN
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Untitled
Abstract: No abstract text available
Text: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLW4470-xx Series HUW0424129-01A November 4, 2004 Preliminary Specification of 1.55µm MQW-DFB Laser Diode Module for Optical Microwave Transmission SLW4470-xx Series Page 1 of 7 Sumitomo Electric Industries, Ltd.
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SLW4470-xx
HUW0424129-01A
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Cree Microwave
Abstract: UGF21090 UGF21090F UGF21090P
Text: UGF21090 90W, 2.17GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency UMTS band from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM single and Multi-Carrier power amplifiers
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UGF21090
17GHz,
2135MHz,
2145MHz
f1-10MHz
10MHz)
100uthorized
UGF21090
Cree Microwave
UGF21090F
UGF21090P
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FAKRA
Abstract: No abstract text available
Text: PASSIVE COMPONENTS Rosenberger Asia Pacific Electronic Co., Ltd. No.3, Anxiang Street, Block B, Tianzhu Airport Industrial Zone Beijing, China 101300 Tel : +86 10 80481995 Fax : (+86 10) 80497052 Email: sales@RosenbergerAP.com Rosenberger (Shanghai) Technology Co.,Ltd.
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xnnnx
Abstract: No abstract text available
Text: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLW4470-xx-xnnnx Series HUW0424128-01C June 26, 2007 Preliminary Specification of 1.29µm-1.57µm MQW-DFB Laser Diode Module for Optical Microwave Transmission SLW4470-xx-xnnnx Series
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SLW4470-xx-xnnnx
HUW0424128-01C
HUW0424128-01A
HUW0424128-01B
xnnnx
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Untitled
Abstract: No abstract text available
Text: Sumitomo Electric Industries, Ltd. Part No. : SLW5410 series Document No. : HUW0525039-01A Date of issue : March 8, 2006 Technical Specification of 1.47-1.61µm DFB Laser Diode Module for wireless communication system application SLW5410 series Sumitomo Electric Industries, Ltd.
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SLW5410
HUW0525039-01A
IRO-D01002
DOC04267B
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Untitled
Abstract: No abstract text available
Text: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLW4270-xx Series HUW0424130-01B August 10, 2006 Preliminary Specification of 1.31µm MQW-DFB Laser Diode Module for Optical Microwave Transmission SLW4270-xx Series RoHS Compliant Page 1 of 7
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SLW4270-xx
HUW0424130-01B
HUW0424130-01A
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laser 1310nm BUTTERFLY
Abstract: PD submount
Text: Sumitomo Electric Industries, Ltd. Part No. : SLW581A series Document No. : HUW0825010-01A Date of issue : September 10, 2008 Preliminary Specification of 1.31µm DFB Laser Diode Module for wireless communication system application SLW581A series RoHS Compliant
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SLW581A
HUW0825010-01A
laser 1310nm BUTTERFLY
PD submount
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xnnnx
Abstract: h260a 1350nm h885 HUW0724102-01A SLW4470 RH2-xnnnx
Text: Sumitomo Electric Industries, Ltd. Part No.: SLW4470-xx/RH2-xnnnx Series Document No.: HUW0724102-01A Date of issue: December 28, 2007 Technical Specification of 1.27µm-1.61µm MQW-DFB Laser Diode Module for Optical Microwave Transmission SLW4470-xx/RH2-xnnnx Series
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SLW4470-xx/RH2-xnnnx
HUW0724102-01A
HUW0724102-01A
xnnnx
h260a
1350nm
h885
SLW4470
RH2-xnnnx
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