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    22L1 Search Results

    22L1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    723622L15PF Renesas Electronics Corporation 256 x 36 x 2 SyncBiFIFO, 5.0V Visit Renesas Electronics Corporation
    72V3622L15PF Renesas Electronics Corporation 256 x 36 x 2 SyncBiFIFO, 3.3V Visit Renesas Electronics Corporation
    723622L12PF Renesas Electronics Corporation 256 x 36 x 2 SyncBiFIFO, 5.0V Visit Renesas Electronics Corporation
    72V3622L10PF Renesas Electronics Corporation 256 x 36 x 2 SyncBiFIFO, 3.3V Visit Renesas Electronics Corporation
    723622L12PF8 Renesas Electronics Corporation 256 x 36 x 2 SyncBiFIFO, 5.0V Visit Renesas Electronics Corporation
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    22L1 Price and Stock

    Infineon Technologies AG FM22L16-55-TGTR

    IC FRAM 4MBIT PARALLEL 44TSOP II
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    DigiKey FM22L16-55-TGTR Digi-Reel 2,850 1
    • 1 $40.03
    • 10 $35.531
    • 100 $31.5225
    • 1000 $30.05032
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    FM22L16-55-TGTR Cut Tape 2,850 1
    • 1 $40.03
    • 10 $35.531
    • 100 $31.5225
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    FM22L16-55-TGTR Reel 2,000 1,000
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    TME FM22L16-55-TGTR 1
    • 1 $21.9
    • 10 $21.5
    • 100 $19.9
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    EBV Elektronik FM22L16-55-TGTR 9 Weeks 1,000
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    Bourns Inc 92R1A-J22-L15L

    POT 10K OHM 1W PLASTIC LINEAR
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    DigiKey 92R1A-J22-L15L Tray 234 1
    • 1 $15.07
    • 10 $12.082
    • 100 $9.75322
    • 1000 $8.87252
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    Bristol Electronics 92R1A-J22-L15L 200
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    92R1A-J22-L15L 30 1
    • 1 $9.296
    • 10 $4.648
    • 100 $4.3384
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    Avnet Abacus 92R1A-J22-L15L 8 Weeks 270
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    Shenzhen Kedajia Electronics Co Ltd CPEX2022L-100MC

    THT HIGH CURRENT POWER INDUCTOR
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    DigiKey CPEX2022L-100MC Tray 159 1
    • 1 $15.04
    • 10 $11.664
    • 100 $9.0182
    • 1000 $8.625
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    Shenzhen Kedajia Electronics Co Ltd CPEX2622L-120MC

    THT HIGH CURRENT POWER INDUCTOR
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    DigiKey CPEX2622L-120MC Tray 82 1
    • 1 $19.87
    • 10 $19.87
    • 100 $12.20638
    • 1000 $11.875
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    Shenzhen Kedajia Electronics Co Ltd CPEX3222L-180MC

    THT HIGH CURRENT POWER INDUCTOR
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    DigiKey CPEX3222L-180MC Tray 70 1
    • 1 $16.72
    • 10 $12.96
    • 100 $10.27325
    • 1000 $9.625
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    22L1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    22L2

    Abstract: 22L4 Piezo Buzzer Buzzer pressure alarm high W-22L2 W-22L1 22l1
    Text: High-output Piezo Alarm Buzzer W-22L Series Wire No. Colour 1 2 3 Black Red Yellow DIMENSIONS: Unit: mm ELECTRICAL SPECIFICATIONS : Model No. W-22L1 W-22L2 W-22L4 W-22L6 100 ~ 115/12VDC/100cm Min. Sound Pressure Level (dB) Rated Voltage (VDC) 12 Operating Voltage (VDC)


    Original     		PDF -22L1 -22L2 -22L4 -22L6 115/12VDC/100cm /12VDC 22L2 22L4 Piezo Buzzer Buzzer pressure alarm high W-22L2 W-22L1 22l1

    Untitled

    Abstract: No abstract text available
    Text: RN2710,RN2711 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN2710,RN2711 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z z z z z Including two devices in USV (ultra super mini type with 5 leads)


    Original     		PDF RN2710 RN2711 RN1710 RN1711

    Untitled

    Abstract: No abstract text available
    Text: SSM5N05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N05FU High Speed Switching Applications Unit: mm • Optimum for high-density mounting in small packages • Low on-resistance: Ron = 0.8 Ω max (@VGS = 4 V) : Ron = 1.2 Ω (max) (@VGS = 2.5 V)


    Original     		PDF SSM5N05FU

    Untitled

    Abstract: No abstract text available
    Text: 2SC4944 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4944 Audio Frequency General Purpose Amplefier Applications • Small package (dual type) • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • High hFE: hFE = 120 to 400


    Original     		PDF 2SC4944 2SA1873

    2SA1873

    Abstract: 2SC4944
    Text: 2SA1873 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1873 Audio Frequency General Purpose Amplifier Applications • Small package (dual type) • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • High hFE • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)


    Original     		PDF 2SA1873 2SC4944 2SA1873 2SC4944

    2SA1873

    Abstract: 2SC4944
    Text: 2SC4944 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4944 ○ 低周波増幅用 単位: mm • ウルトラスーパーミニ (5 端子) パッケージに 2 素子を内蔵しています。 • 2 素子間のペア性が良い。


    Original     		PDF 2SC4944 2SA1873 2SA1873 2SC4944

    RN1130F

    Abstract: RN2130F RN47A6
    Text: RN47A6 TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN47A6 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Ultra-Super-Mini (5 pin)


    Original     		PDF RN47A6 0062g RN1130F RN2130F RN1130F RN2130F RN47A6

    Untitled

    Abstract: No abstract text available
    Text: SSM5P15FU 東芝電界効果トランジスタ シリコンPチャネルMOS形 SSM5P15FU ○ 高速スイッチング用 ○ アナログスイッチ用 単位: mm 2.1±0.1 • 小型パッケージで高密度実装に最適 記 号 定 格 単位 VDS −30


    Original     		PDF SSM5P15FU

    Untitled

    Abstract: No abstract text available
    Text: RN47A1 東芝トランジスタ シリコンNPN • PNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN47A1 ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm •


    Original     		PDF RN47A1

    RN1707

    Abstract: RN1708 RN1709 RN2707 RN2709
    Text: RN1707~RN1709 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1707,RN1708,RN1709 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including two devices in USV (ultra super mini type with 5 leads) z With built-in bias resistors


    Original     		PDF RN1707 RN1709 RN1708 RN2707 RN2709 RN1707 RN1708 RN1709 RN2709

    RN2102F

    Abstract: RN47A3 RN1102F
    Text: RN47A3 TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN47A3 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Unit: mm Two devices are incorporated into an Ultra-Super-Mini (5 pin)


    Original     		PDF RN47A3 0062g RN1102F RN2102F RN2102F RN47A3 RN1102F

    RN1707

    Abstract: RN1709 RN2707 RN2708 RN2709
    Text: RN2707~RN2709 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2707,RN2708,RN2709 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm Including two devices in USV (ultra super mini type with 5 leads) With built-in bias resistors


    Original     		PDF RN2707 RN2709 RN2708 RN1707 RN1709 RN2707 RN2708 RN1709 RN2709

    RN1701

    Abstract: RN2701 RN2702 RN2703 RN2704 RN2705 RN2706
    Text: RN2701~RN2706 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2701,RN2702,RN2703,RN2704,RN2705,RN2706 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm Including two devices in USV (ultra super mini type with 5 leads)


    Original     		PDF RN2701 RN2706 RN2702 RN2703 RN2704 RN2705 RN17011706 RN2701 RN1701 RN2706

    RN2707

    Abstract: RN1707 RN1709 RN2708 RN2709
    Text: RN2707~RN2709 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2707,RN2708,RN2709 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in USV (ultra super mini type with 5 leads) With built-in bias resistors


    Original     		PDF RN2707 RN2709 RN2708 RN1707 RN1709 RN2707 RN2708 RN1709 RN2709

    TOSHIBA Transistor Silicon PNP Epitaxial Type

    Abstract: RN2714
    Text: RN2714 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2714 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Two devices incorporated in a USV (5-pin ultra-super-mini-type) Built-in bias resistors Simplified circuit design


    Original     		PDF RN2714 TOSHIBA Transistor Silicon PNP Epitaxial Type RN2714

    HN4B01JE

    Abstract: No abstract text available
    Text: HN4B01JE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process Silicon PNP Epitaxial Type (PCT Process) HN4B01JE Unit: mm Audio Frequency General Purpose Amplifier Applications Q1:High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400


    Original     		PDF HN4B01JE 150mA -150mA HN4B01JE

    lu 2705

    Abstract: No abstract text available
    Text: RN2701,2702,2703 RN2704,2705,2706 RN2701 U n it in mm SW ITCHIN G , INVERTER CIRCUIT, INTERFACE CIRCUIT 2.1 ± 0.1 A N D DRIVER CIRCUIT APPLICATIONS. • , 1.2 5±0 .1 , H . •■■■«! ¥ Including Two Devices in USV (U ltra Super Mini Type w ith 5


    OCR Scan     		PDF RN2701 RN2704 RN2701) RN1701 RN1706 RN2701 RN2N2703 RN2704 lu 2705

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE RN2701-RN2706 U n it in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. • 1 .25 Í0 .1 J Including Two Devices in USV U ltra Super Mini Type w ith 5 >-« leads ©o +I • W ith B uilt-in B ias Resistors


    OCR Scan     		PDF RN2701-RN2706 RN1701 RN1706 RN2701 RN2702 RN2703 RN2704 RN2705 RN2706

    D 1709 N 22

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE RN1707-RN1709 U n it in m m SW ITC H IN G , INV ERTER CIRCUIT, IN TERFAC E C IRCU IT A N D D R IV ER C IRC U IT A PPLICA TIO N S. • In c lu d in g Two D evices in U SV U ltra S u p e r M ini T ype w ith 5 leads • W ith B u ilt-in B ias R esistors


    OCR Scan     		PDF RN1707-RN1709 RN1708 RN1709 RN1707 RN1708 D 1709 N 22

    IDT39C861

    Abstract: IDT39C862 IDT39C863 IDT39C864
    Text: i f i t H IG H - P E R F O R M A N C E C M O S BUS TR AN S CEIV E RS Im ID T 3 9 C 8 6 1 -6 4 In t e g r a t e d D e v ic e T e c h n o lo g y . Inc FEATURES: DESCRIPTION: • Equivalent lo AMD's Am29861-64 Bipolar Registers in pinout/function, speeds and output drive over full


    OCR Scan     		PDF IDT39C861-64 Am29861-64 200mV MIL-STD-883 IDT39C861 /IDT39C863 300pF 1DT39C862/IDT39C864 IDT39C862 IDT39C863 IDT39C864

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA HN4K03JU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE HN4K03JU Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS High Input Impedance Low Gate Threshold Voltage : V^h = 0.5—1.5 V Excellent Switching Times Small Package


    OCR Scan     		PDF HN4K03JU

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN1701 ~R N 1706 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1701, RN1702, RN1703, RN1704, RN1705, RN1706 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. 1 .2 5 1 -0 .1 -m- »


    OCR Scan     		PDF RN1701 RN1701, RN1702, RN1703, RN1704, RN1705, RN1706 RN2701 RN2706 RN1703

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    MARKING 25J

    Abstract: marking IAY 2SA1873 2SC4944
    Text: TOSHIBA 2SC4944 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4944 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. 2 110.1 1.25 ± 0.1 . Small Package (Dual Type) High Voltage and High Current : V0EO-5OV, 10 = 150mA (Max.)


    OCR Scan     		PDF 2SC4944 150mA 2SA1873 961001EAA2' MARKING 25J marking IAY 2SA1873 2SC4944