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    230NS Price and Stock

    Destaco DPL-3230-NS

    PARALLEL GRIPPER,DIRECT CONNECT
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    DigiKey DPL-3230-NS Ammo Pack 1
    • 1 $1928
    • 10 $1928
    • 100 $1928
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    Halo Electronics Inc TGM-230NSLF

    ISO MOD DC MAX253 4C:3C 11VUS 6P
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    DigiKey TGM-230NSLF Tube 620
    • 1 -
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    • 1000 $1.469
    • 10000 $1.469
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    Avnet Americas TGM-230NSLF Tube 620
    • 1 -
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    • 1000 $1.26
    • 10000 $1.152
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    Mouser Electronics TGM-230NSLF 40
    • 1 $4.5
    • 10 $4.5
    • 100 $1.92
    • 1000 $1.39
    • 10000 $1.21
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    Halo Electronics Inc TGM-230NSRL

    ISO MOD DC MAX253 4C:3C 11VUS 6P
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    DigiKey TGM-230NSRL Tube 620
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    • 1000 $1.53984
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    Avnet Americas TGM-230NSRL Tube 620
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    • 1000 $1.33
    • 10000 $1.216
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    Mouser Electronics TGM-230NSRL 200
    • 1 $4.75
    • 10 $4.75
    • 100 $2.02
    • 1000 $1.46
    • 10000 $1.27
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    Halo Electronics Inc TGM-230NSLFTR

    ISO MOD DC MAX253 4C:3C 11VUS 6P
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    DigiKey TGM-230NSLFTR Reel 1,000
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    Avnet Americas TGM-230NSLFTR Reel 1,000
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    • 1000 $1.34478
    • 10000 $1.2032
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    Mouser Electronics TGM-230NSLFTR
    • 1 -
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    • 1000 $1.39
    • 10000 $1.26
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    Halo Electronics Inc TGM-230NSRLTR

    ISO MOD DC MAX253 4C:3C 11VUS 6P
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    DigiKey TGM-230NSRLTR Reel 1,000
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    • 1000 $1.54934
    • 10000 $1.54934
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    Avnet Americas TGM-230NSRLTR Reel 1,000
    • 1 -
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    • 10000 -
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    Mouser Electronics TGM-230NSRLTR
    • 1 -
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    • 1000 $1.46
    • 10000 $1.32
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    230NS Datasheets Context Search

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    schematic diagram UPS 600 Power free

    Abstract: schematic diagram UPS SanRex welding rectifier schematic 150a power supply dc welding circuit diagram dc welding machine circuit diagram NY Series sanrex Welding machine circuit diagram DCA150AA60
    Text: SanRex Soft Recovery Diode DCA150AA50/60 IF AV = 150A, VRRM=600V trr=230ns, Softness=0.8 SanRex Soft Recovery Diode Module DCA150AA series is designed for applications requiring fast switching and soft recovery wave shape to reduce or eliminate the need for


    Original     		PDF DCA150AA50/60 230ns, DCA150AA O-240 E76102 co-1313 00A/Fs schematic diagram UPS 600 Power free schematic diagram UPS SanRex welding rectifier schematic 150a power supply dc welding circuit diagram dc welding machine circuit diagram NY Series sanrex Welding machine circuit diagram DCA150AA60

    LMV331

    Abstract: MAX9030 MAX9031 na3x MAX903X
    Text: SHATTERING COMPARATOR STANDARDS FOR SPEED, POWER, AND PACKAGING 230ns SPEC fast 600ns slow ns 0 100 200 300 400 500 600 230 600 ICC @ 5V 55µA 120µA Shutdown Current 1µA None Hysteresis 4mV None Price* $0.26 $0.26 700 SUPPLY CURRENT µA CONSUME 2.0x LESS CURRENT


    Original     		PDF 230ns LMV331 MAX9031 MAX9030 LMV33x 600ns MAX903x MAX9075/9077 LMV331 MAX9030 MAX9031 na3x MAX903X

    No 42 G30N60C3D

    Abstract: g30n60c3d HGTG30N60C3D LD26 RHRP3060 TA49051 TA49053 g30n60 G30N60C
    Text: HGTG30N60C3D S E M I C O N D U C T O R 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features • • • • • Package o 63A, 600V at TC = +25 C Typical Fall Time - 230ns at TJ = +150oC Short Circuit Rating Low Conduction Loss


    Original     		PDF HGTG30N60C3D 230ns 150oC O-247 HGTG30N60C3D 150oC. TA49051. 1-800-4-HARRIS No 42 G30N60C3D g30n60c3d LD26 RHRP3060 TA49051 TA49053 g30n60 G30N60C

    Untitled

    Abstract: No abstract text available
    Text: HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBT August 1995 Features Packages JEDEC TO-220AB EMITTER COLLECTOR GATE • 24A, 600V at TC = +25oC • 600V Switching SOA Capability • Typical Fall Time - 230ns at TJ = +150oC


    Original     		PDF HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S O-220AB 230ns 150oC O-262AA HGT1S12N60C3

    DC chopper

    Abstract: DCA150AA60 SanRex
    Text: SanRex ISOLATED DIODE MODULE SOFT RECOVERY DIODE DCA150AA50/60 VRRM=500/600V, IFAV =150A, trr=230ns, Softness=0.8 SanRex Soft Recovery Diode Module DCA150AA is designed for applications requiring fast switching and soft recovery wave shape to reduce or eliminate the need for snubber


    Original     		PDF DCA150AA50/60 500/600V, 230ns, DCA150AA E76102 00A/Fs DC chopper DCA150AA60 SanRex

    IS456

    Abstract: No abstract text available
    Text: IS456 IS456 High Speed Response Type OPIC Light Detector • Features ■ Outline Dimensions 0.25 3 2 ■ Applications 3.81 ± 0.3 4 Detector center 5.0 ± 0.1 1 Unit : mm 2.5 ± 0.2 + 0.7 0.4 - 0.3 0.1 1. High speed response ( t PHL : TYP.230ns ) 2. Uses a pattern to allow for possible


    Original     		PDF IS456 230ns 780nm IS456

    B456 F 15

    Abstract: B456 1S456 IS456 50n25
    Text: 1S456 1S456 Huh Speed Res~se Type OPIC Light Detector • F-ras 1. High speed response b~~ : TYP.230ns 2. Uses a pattern to allow for possible positional deviation of the semiconductor laser spot. 3. Compact, mini-flat package ¤ouuina~ (Unit : mm) ■ Amti


    Original     		PDF 1S456 230ns) IS456 B456 F 15 B456 1S456 IS456 50n25

    g30n60c3d

    Abstract: G30N60 transistor 40411 40411 transistor TA49051 TA49014 No 42 G30N60C3D TA49053 HGTG30N60C3D N-channel enhancement 200V 60A
    Text: HGTG30N60C3D S E M I C O N D U C T O R 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 1997 Features • • • • • Package o 63A, 600V at TC = 25 C Typical Fall Time . . . . . . . . . . . . . . 230ns at TJ = 150oC Short Circuit Rating


    Original     		PDF HGTG30N60C3D 230ns 150oC O-247 HGTG30N60C3D 150oC. 1-800-4-HARRIS g30n60c3d G30N60 transistor 40411 40411 transistor TA49051 TA49014 No 42 G30N60C3D TA49053 N-channel enhancement 200V 60A

    51k diode

    Abstract: IS456
    Text: IS456 IS456 High Speed Response Type OPIC Light Detector • Features ■ Outline Dimensions 0.25 3 2 ■ Applications 3.81 ± 0.3 4 Detector center 5.0 ± 0.1 1 Unit : mm 2.5 ± 0.2 + 0.7 0.4 - 0.3 0.1 1. High speed response ( t PHL : TYP.230ns ) 2. Uses a pattern to allow for possible


    Original     		PDF IS456 230ns 780nm 51k diode IS456

    g30n60c3

    Abstract: TA49051 igbt g30n60c3 HGTG30N60C3 LD26 RHRP3060 740 MOSFET TRANSISTOR g30n60
    Text: HGTG30N60C3 S E M I C O N D U C T O R 63A, 600V, UFS Series N-Channel IGBT January 1997 Features • • • • • Package 63A, 600V at TC = 25oC 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . 230ns at TJ = 150oC Short Circuit Rating


    Original     		PDF HGTG30N60C3 230ns 150oC O-247 HGTG30N60C3 150oC. g30n60c3 TA49051 igbt g30n60c3 LD26 RHRP3060 740 MOSFET TRANSISTOR g30n60

    Untitled

    Abstract: No abstract text available
    Text: SanRex ISOLATED DIODE MODULE SOFT RECOVERY DIODE DCA1 5 0 AA5 0 /6 0 VRRM=500/600V, IFAV =150A, trr=230ns, Softness=0.8 Sa nRe x Soft Recovery Diode Module DCA150AA is designed for applications requiring fast switching and soft recovery wave shape to reduce or eliminate the need for snubber


    Original     		PDF 500/600V, 230ns, DCA150AA E76102 in-25) 00A/Fs

    APT30F50B

    Abstract: APT30F50S MIC4452
    Text: APT30F50B APT30F50S 500V, 30A, 0.19Ω Max, trr ≤230ns N-Channel FREDFET TO -2 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft


    Original     		PDF APT30F50B APT30F50S 230ns APT30F50B APT30F50S MIC4452

    transistor 1354

    Abstract: LT1354CN8 1354 LT1354 LT1354CS8 LT1357 LT1365
    Text: LT1354 12MHz, 400V/µs Op Amp U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1354 is a low power, high speed, high slew rate operational amplifier with outstanding AC and DC performance. The LT1354 has much lower supply current, lower


    Original     		PDF LT1354 12MHz, LT1354 120kHz LT1355/LT1356 LT1357 25MHz, LT1358/LT1359 transistor 1354 LT1354CN8 1354 LT1354CS8 LT1357 LT1365

    p12n60c3

    Abstract: 4040 FAIRCHILD P12N60 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 LD26 RHRP1560 S12N60C3 TA49123
    Text: HGTP12N60C3, HGT1S12N60C3S Data Sheet January 2000 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		PDF HGTP12N60C3, HGT1S12N60C3S HGTP12N60C3 HGT1S12N60C3S 150oC. p12n60c3 4040 FAIRCHILD P12N60 HGT1S12N60C3S9A LD26 RHRP1560 S12N60C3 TA49123

    cmkm

    Abstract: OPA605 KS 2152 OPA80
    Text: B U R R -B R O W N OPA6Q5 ] Wideband Fast-Settling OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • FAST SETTLING: 230nsec typ to 0.01% • PULSE AMPLIFIERS • WIDE BANDWIDTH: 200MHz Galn-Bandwidth Product • FAST D/A CONVERTERS • FAST SLEWING: 300V//usoc slow rate, Acl > 50


    OCR Scan     		PDF 230nsec 200MHz 00V//Â 50tyiV PH0T0DI00E OPA605 cmkm KS 2152 OPA80

    Untitled

    Abstract: No abstract text available
    Text: BURR-BROW N [ O PA605 ] là Wideband Fast-Settling O P E R A TIO N A L AMPLIFIER FEATURES APPLICATIO NS • FA S T S E T T LIN G : 230nsec typ to 0.01% • P U LS E A M P LIFIER S • W IDE BANDW IDTH: 200MHz Gain-Bandwidth Product • FA S T D/A C O N VER TER S


    OCR Scan     		PDF OPA605 230nsec 200MHz 500//V

    Untitled

    Abstract: No abstract text available
    Text: SHARP IS456 IS456 High Speed Response Type OPIC Ught Detector • Feature« ■ Outfne Dknenskxis U nit : m m 1. High speed response (tm : TYP.230ns) 2. Uses a pattern to allow for possible positional deviation of the semiconductor laser spot. 3. Compact, mini-flat package


    OCR Scan     		PDF IS456 230ns)

    Untitled

    Abstract: No abstract text available
    Text: OPA605 B U R R -B R O W N ; E 1 Wideband Fast-Settling OPERATIONAL AMPLIFIER APPLICATIONS FEATURES • FAST SETTLING: 230nsec typ to 0.01% • PULSE AM PLIFIERS • WIDE BANDWIDTH: 200MHz Giln-Bindwfdth Product • FAST D/A CONVERTERS • FAST SLEWING: 300V//iSOC law rite. A * > 50


    OCR Scan     		PDF OPA605 230nsec 200MHz 00V//iSOC OPA605

    km41256 dram

    Abstract: KM-41256 km41256 KM41256A-10 KM41257A TRCD D
    Text: NMOS DRAM KM41256A/KM41257A 2 56 K x 1 Bit Dynamic RAM with Page/Nibble Mode DESCRIPTION FEATURES • Performance range KM41256/7A-10 taac tcAC •rc 100ns 50ns 200ns KM41256/7A-12 120ns 60ns 230ns KM41256/7A-15 150ns 75ns 260ns Page Mode capability-KM41256A


    OCR Scan     		PDF KM41256A/KM41257A 256Kx KM41256/7A-10 100ns 200ns KM41256/7A-12 120ns 230ns KM41256/7A-15 150ns km41256 dram KM-41256 km41256 KM41256A-10 KM41257A TRCD D

    KM41256

    Abstract: 30 pin SIP dram memory 256KX8 SIMM
    Text: KMM48256/KMM48257 KM M58256/KM M58257 MEMORY MODULES 2 5 6 K x 8 Bit DRAM Memory Modules SIP/SIMM GENERAL DESCRIPTION FEATURES • 262,144 x 8-bit Organization • Performance range: • • • • • • • tRAC tcAc Í rc K M M48256/7-12 120ns 60ns 230ns


    OCR Scan     		PDF M48256/KM M48257 KMM58256/KMM58257 256Kx8 M48256/7-12 120ns 230ns KMM58256/7-12 KM41256 30 pin SIP dram memory 256KX8 SIMM

    Untitled

    Abstract: No abstract text available
    Text: SMAH9P IS456 High Speed Response Type OPtC Light Detector IS456 IOutline Dimensions • Features U n it: mm 1. High speed response (tpm.: TYP.230ns ) 2. Uses a pattern to allow for possible positional deviation o f the semiconductor laser spot. D etector


    OCR Scan     		PDF IS456 230ns

    TRANSISTOR D206

    Abstract: 8512A transistor D209 LA 8512 TC51V8512
    Text: TOSHIBA TC51V8512AF/AFT/ATR-12/15 PRELIMINARY SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The T C 5 1V 8512 A F is a 4M bit high speed C M O S pse udo static RAM organized as 5 2 4 ,2 8 8 w o rd s by 8 bits. The T C 51V 8512A F


    OCR Scan     		PDF TC51V8512AF/AFT/ATR-12/15 D-212 D-213 TRANSISTOR D206 8512A transistor D209 LA 8512 TC51V8512

    of half subtractor ic

    Abstract: AD369AM ic for half subtractor
    Text: A N A LO G D EVICES Complete Programmable Gain 12-Bit Data Acquisition System AD369 FEATURES Includes: Programmable Gain Instrumentation Amplifier, Track and Hold Amplifier 12-Bit A/D Converter Digitally Controlled Gain 1,10,100, 500 50kHz Throughput Rate


    OCR Scan     		PDF 12-Bit 50kHz 28-Pin 775mW AD369 AD369 150pF) of half subtractor ic AD369AM ic for half subtractor

    memory samsung

    Abstract: No abstract text available
    Text: KMM411024/K M M 511024 KMM411025/KMM 511025 SAMSUNG Semiconductor Preliminary IM eg X 1 DRAM SIP and SIMM Memory Modules JULY 1987 FEATURES GENERAL DESCRIPTION • 1M x 1 Organization • Performance range: The Samsung KMM411024, KMM411025, KMM511024 and KMM511025, are 1M x 1 dynamic RAM


    OCR Scan     		PDF KMM411024/KMM511024 KMM41102 5/KMM511025 KMM411024, KMM411025, KMM511024 KMM511025, KM41256/7 18-pin KMM411024 memory samsung