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    GM23C8100BFW

    Abstract: 23C8100B
    Text: @ LG Semicon. Co. LTD Description The 23C8100B high performance read only memory is organized either as 1,048,576 x 8 byte mode or 524,288 x 16 bits (word mode) and has an access time of 120/15Qns. The 23C8100B offers automatic power down controlled by the mask


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    PDF GM23C8100B 120/15Qns. IDA14 A0-A18 015/A-l MD2B757 0004fl32 GM23C8100BFW 23C8100B

    MB8316200

    Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B
    Text: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C UPD23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C UPD23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET UPD23C4000S


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    PDF 23C4000C 23C4100C 23C4200C 23V4000C KM23V41 KM23V41OOCET UPD23C4001EB UPD23C4000S HN62344B HN62444 MB8316200 uPD23C4000S TC533200 UPD23C4000 23C32000a 624116 HN62318/338B