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    GM23C8100BFW

    Abstract: 23C8100B
    Text: @ LG Semicon. Co. LTD Description The GM23C8100B high performance read only memory is organized either as 1,048,576 x 8 byte mode or 524,288 x 16 bits (word mode) and has an access time of 120/15Qns. The GM23C8100B offers automatic power down controlled by the mask


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    GM23C8100B 120/15Qns. IDA14 A0-A18 015/A-l MD2B757 0004fl32 GM23C8100BFW 23C8100B PDF

    gm16c450

    Abstract: GM82C50A C50A GD43C gm82C AXH marking
    Text: G M 1 6 C 4 5 0 /8 2 C 5 0 A ASYNCHRONOUS COMMUNICATIONS ELEMENT General Description Features The GM16C450 is an improved specification version of the GM82C50A Asynchronous Communications Ele­ ment ACE . The improved specifications ensure com­ patibility with state-of-the-art CPUs. Functionally, the


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    M16C450/82C50A GM16C450 GM82C50A GM82C5QA. DDD43TÃ C50A GD43C gm82C AXH marking PDF

    GM71C16400AR-7

    Abstract: No abstract text available
    Text: @ LG Semicon. Co. LTD Description Pin Configuration The GM71C16400A is the new generation dynamic RAM organized 4,194,304 x 4 Bit. GM71C16400A has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The GM71C16400A offers Fast


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    GM71C16400A GM71C16400AR-7 PDF

    GM71C4263

    Abstract: GM71C4
    Text: @ LG Semicon. Co. LTD. Description Features The GM71C S 4263D/DL is the new generation dynamic RAM organized 262,144 words x 16 bit. GM71C(S)4263D/DL has realized higher density, higher performance and various functions by utilizing advanced CMOS process tech n o lo g y . The


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    4263D/DL GM71C Q0D53b4 00D53b5 GM71C4263 GM71C4 PDF